We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocki...We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.展开更多
In the process of synthesis of nanometer SiC precursors with sol-gel of SiO2 and lignin , the products of all sizes required can be controlled by the concentration of reac-t ants , pH, temperature, reaction and ageing...In the process of synthesis of nanometer SiC precursors with sol-gel of SiO2 and lignin , the products of all sizes required can be controlled by the concentration of reac-t ants , pH, temperature, reaction and ageing time , and so on . The best conditions in this research are : the concentration of Na2SiO3 and organic matters are 4. 50% and 26.4% respectively, pH = 3.3 , T = 65℃ , ageing time is 30min , dried at 150 ℃ , the size of SiC precursors is about 2.0μm .展开更多
With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- du...With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.展开更多
The formation of silicon carbide upon deposition of C60 and Si on Si（100） surface at 850^o C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction （RHEED）. The C ls, O ls ...The formation of silicon carbide upon deposition of C60 and Si on Si（100） surface at 850^o C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction （RHEED）. The C ls, O ls and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 50132040 and 50302014, the National Basic Research Program of China, and the Knowledge Innovation Project of Chinese Academy of Sciences.
文摘We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.
文摘In the process of synthesis of nanometer SiC precursors with sol-gel of SiO2 and lignin , the products of all sizes required can be controlled by the concentration of reac-t ants , pH, temperature, reaction and ageing time , and so on . The best conditions in this research are : the concentration of Na2SiO3 and organic matters are 4. 50% and 26.4% respectively, pH = 3.3 , T = 65℃ , ageing time is 30min , dried at 150 ℃ , the size of SiC precursors is about 2.0μm .
基金Supported by the National Natural Science Foundation of China under Grant No 60606022.
文摘With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.
基金Supported by the National Natural Science Foundation of China under Grant No 50572100.
文摘The formation of silicon carbide upon deposition of C60 and Si on Si（100） surface at 850^o C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction （RHEED）. The C ls, O ls and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.
