用二维器件仿真软件 MEDICI对 Si COI(Si C on insulator) MESFET的击穿特性进行了研究 ,提出了一种新的 Si COI MESFET器件介质槽隔离结构 ,即多台阶介质槽隔离结构 .研究结果表明 ,与单介质槽隔离 Si COI MES-FET相比 ,多台阶结构在...用二维器件仿真软件 MEDICI对 Si COI(Si C on insulator) MESFET的击穿特性进行了研究 ,提出了一种新的 Si COI MESFET器件介质槽隔离结构 ,即多台阶介质槽隔离结构 .研究结果表明 ,与单介质槽隔离 Si COI MES-FET相比 ,多台阶结构在保持高击穿电压的情况下 ,可以大大提高器件的饱和漏电流和跨导 .多台阶介质槽隔离Si COI展开更多
提出了一种新型的 Si COIMESFET器件结构 ,即介质槽隔离 Si COIMESFET。模拟结果表明 ,新型结构器件与常规平面 Si COI MESFET器件相比 ,击穿电压得到很大提高 ,从 3 80 V提高到近 1 1 0 0 V,而饱和漏电流和跨导下降。但通过器件结构的...提出了一种新型的 Si COIMESFET器件结构 ,即介质槽隔离 Si COIMESFET。模拟结果表明 ,新型结构器件与常规平面 Si COI MESFET器件相比 ,击穿电压得到很大提高 ,从 3 80 V提高到近 1 1 0 0 V,而饱和漏电流和跨导下降。但通过器件结构的优化设计可以保障在击穿电压提高的同时漏电流和跨导不会发生大的退化。该器件结构为高温、抗辐照和大功率集成电路研制打下基础。展开更多
Silicon carbide on insulator(SiCOI)has emerged as a promising platform for microresonator-based frequency comb technology,owing to its exceptional optical properties—including a high refractive index,a broad transpar...Silicon carbide on insulator(SiCOI)has emerged as a promising platform for microresonator-based frequency comb technology,owing to its exceptional optical properties—including a high refractive index,a broad transparency window,and the coexistence of both second-and third-order optical nonlinearities.Recent demonstrations have shown efficient Raman laser and frequency comb generation in SiC integrated microresonators.In this work,we report the first observation,to our knowledge,of Stokes soliton generation in SiC integrated microresonators.Pumped at a resonance of TE10 mode(1555.2 nm)with 270 mW of on-chip power,a strong Stokes signal at 1769.2 nm,corresponding to a Raman shift of approximately 776 cm^(-1),is observed in a4H-SiCOI microresonator with a 36μm radius and a quality factor of 1.1 million for TE00 mode.As the pump wavelength is adiabatically tuned towards the resonance,the system undergoes a sequence of dynamical states—transitioning from Turing patterns to chaotic combs,and finally to a stable single soliton state.The pump laser serves a dual role:it acts as the energy source for Stokes comb generation and simultaneously compensates for thermal dynamics during Stokes soliton formation.These results demonstrate the low-noise frequency conversion into a longer wavelength range with the SiCOI platform,highlighting its potential for the mid-infrared soliton comb generation and gas spectroscopy applications.展开更多
文摘用二维器件仿真软件 MEDICI对 Si COI(Si C on insulator) MESFET的击穿特性进行了研究 ,提出了一种新的 Si COI MESFET器件介质槽隔离结构 ,即多台阶介质槽隔离结构 .研究结果表明 ,与单介质槽隔离 Si COI MES-FET相比 ,多台阶结构在保持高击穿电压的情况下 ,可以大大提高器件的饱和漏电流和跨导 .多台阶介质槽隔离Si COI
文摘提出了一种新型的 Si COIMESFET器件结构 ,即介质槽隔离 Si COIMESFET。模拟结果表明 ,新型结构器件与常规平面 Si COI MESFET器件相比 ,击穿电压得到很大提高 ,从 3 80 V提高到近 1 1 0 0 V,而饱和漏电流和跨导下降。但通过器件结构的优化设计可以保障在击穿电压提高的同时漏电流和跨导不会发生大的退化。该器件结构为高温、抗辐照和大功率集成电路研制打下基础。
文摘Silicon carbide on insulator(SiCOI)has emerged as a promising platform for microresonator-based frequency comb technology,owing to its exceptional optical properties—including a high refractive index,a broad transparency window,and the coexistence of both second-and third-order optical nonlinearities.Recent demonstrations have shown efficient Raman laser and frequency comb generation in SiC integrated microresonators.In this work,we report the first observation,to our knowledge,of Stokes soliton generation in SiC integrated microresonators.Pumped at a resonance of TE10 mode(1555.2 nm)with 270 mW of on-chip power,a strong Stokes signal at 1769.2 nm,corresponding to a Raman shift of approximately 776 cm^(-1),is observed in a4H-SiCOI microresonator with a 36μm radius and a quality factor of 1.1 million for TE00 mode.As the pump wavelength is adiabatically tuned towards the resonance,the system undergoes a sequence of dynamical states—transitioning from Turing patterns to chaotic combs,and finally to a stable single soliton state.The pump laser serves a dual role:it acts as the energy source for Stokes comb generation and simultaneously compensates for thermal dynamics during Stokes soliton formation.These results demonstrate the low-noise frequency conversion into a longer wavelength range with the SiCOI platform,highlighting its potential for the mid-infrared soliton comb generation and gas spectroscopy applications.
