This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-a...This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-assisted junction termination extension(RA-JTE),multiple floating zone JTE(MFZ-JTE),and field limiting rings(FLR)were fabricated and irradiated with45 Me V protons at fluences ranging from 1×10^(12) to 1×10^(14) cm^(-2).Experimental results,supported by TCAD simulations,show that the RA-JTE structure maintained stable breakdown performance with less than 1%variation due to its effective electric field redistribution by multiple P+rings.In contrast,MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1%and 15.2%,respectively,under the highest fluence.These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened Si C power devices in space and other highradiation environments.展开更多
The electromagnetic wave absorption of silicon carbide nanowires is improved by their uniform and diverse cross-structures.This study introduces a sustainable and high value-added method for synthesizing silicon carbi...The electromagnetic wave absorption of silicon carbide nanowires is improved by their uniform and diverse cross-structures.This study introduces a sustainable and high value-added method for synthesizing silicon carbide nanowires using lignite and waste silicon powder as raw materials through carbothermal reduction.The staggered structure of nanowires promotes the creation of interfacial polarization,impedance matching,and multiple loss mechanisms,leading to enhanced electromagnetic absorption performance.The silicon carbide nanowires demonstrate outstanding electromagnetic absorption capabilities with the minimum reflection loss of-48.09 d B at10.08 GHz and an effective absorption bandwidth(the reflection loss less than-10 d B)ranging from 8.54 to 16.68 GHz with a thickness of 2.17 mm.This research presents an innovative approach for utilizing solid waste in an environmentally friendly manner to produce broadband silicon carbide composite absorbers.展开更多
基金supported by the IITP(Institute for Information&Communications Technology Planning&Evaluation)under the ITRC(Information Technology Research Center)support program(IITP-2025-RS-2024-00438288)grant funded by the Korea government(MSIT)+1 种基金National Research Council of Science&Technology(NST)grant by the MSIT(Aerospace Semiconductor Strategy Research Project No.GTL25051-000)supported by the IC Design Education Center(IDEC),Korea。
文摘This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-assisted junction termination extension(RA-JTE),multiple floating zone JTE(MFZ-JTE),and field limiting rings(FLR)were fabricated and irradiated with45 Me V protons at fluences ranging from 1×10^(12) to 1×10^(14) cm^(-2).Experimental results,supported by TCAD simulations,show that the RA-JTE structure maintained stable breakdown performance with less than 1%variation due to its effective electric field redistribution by multiple P+rings.In contrast,MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1%and 15.2%,respectively,under the highest fluence.These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened Si C power devices in space and other highradiation environments.
基金supported by the National Natural Science Foundation of China(No.52436008)the Inner Mongolia Science and Technology Projects,China(Nos.JMRHZX20210003 and 2023YFCY0009)+3 种基金the Huaneng Group Co Ltd.,China(No.HNKJ23-H50)the National Natural Science Foundation of China(No.22408044)the China Postdoctoral Science Foundation(No.2024M761877)the National Key R&D Program of China(No.SQ2024YFD2200039)。
文摘The electromagnetic wave absorption of silicon carbide nanowires is improved by their uniform and diverse cross-structures.This study introduces a sustainable and high value-added method for synthesizing silicon carbide nanowires using lignite and waste silicon powder as raw materials through carbothermal reduction.The staggered structure of nanowires promotes the creation of interfacial polarization,impedance matching,and multiple loss mechanisms,leading to enhanced electromagnetic absorption performance.The silicon carbide nanowires demonstrate outstanding electromagnetic absorption capabilities with the minimum reflection loss of-48.09 d B at10.08 GHz and an effective absorption bandwidth(the reflection loss less than-10 d B)ranging from 8.54 to 16.68 GHz with a thickness of 2.17 mm.This research presents an innovative approach for utilizing solid waste in an environmentally friendly manner to produce broadband silicon carbide composite absorbers.
