Sialon/SiC composites were synthesized in situ from SiC,α-Si_(3)N_(4),AlN,calcined bauxite,quartz and Y_(2)O_(3) via layered buried sintering at different temperatures (1 540-1 640 ℃).The results showed that the O’...Sialon/SiC composites were synthesized in situ from SiC,α-Si_(3)N_(4),AlN,calcined bauxite,quartz and Y_(2)O_(3) via layered buried sintering at different temperatures (1 540-1 640 ℃).The results showed that the O’-sialon/SiC sample with 60 wt% silicon carbide sintered at 1 600 ℃ exhibited excellent mechanical properties,with apparent porosity of 16.01%,bulk density of 2.06 g·cm^(-3),bending strength of 52.63 MPa,and thermal expansion coefficient of 5.83×10-6 ℃^(-1).The oxide film formed on the surface was linked closely to O’-sialon,so the oxide film was not easily broken.After 100 h oxidization,the sample surface was smoother and denser,with oxidation weight gain rate 23.6 mg/cm^(2) and oxidation rate constant 2.0 mg^(2)·cm^(-4)·h^(-1).Therefore,the sample had the excellent high-temperature oxidation resistance.It was confirmed that the in-situ sialon/SiC composites could be a promising candidate for solar absorber owing to its high-temperature oxidation resistance.展开更多
基金Funded by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(No.2018YFB1501002)Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory(No.XHD2020-001)。
文摘Sialon/SiC composites were synthesized in situ from SiC,α-Si_(3)N_(4),AlN,calcined bauxite,quartz and Y_(2)O_(3) via layered buried sintering at different temperatures (1 540-1 640 ℃).The results showed that the O’-sialon/SiC sample with 60 wt% silicon carbide sintered at 1 600 ℃ exhibited excellent mechanical properties,with apparent porosity of 16.01%,bulk density of 2.06 g·cm^(-3),bending strength of 52.63 MPa,and thermal expansion coefficient of 5.83×10-6 ℃^(-1).The oxide film formed on the surface was linked closely to O’-sialon,so the oxide film was not easily broken.After 100 h oxidization,the sample surface was smoother and denser,with oxidation weight gain rate 23.6 mg/cm^(2) and oxidation rate constant 2.0 mg^(2)·cm^(-4)·h^(-1).Therefore,the sample had the excellent high-temperature oxidation resistance.It was confirmed that the in-situ sialon/SiC composites could be a promising candidate for solar absorber owing to its high-temperature oxidation resistance.
