The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS （SG-NLDMOS） transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For dif...The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS （SG-NLDMOS） transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift （NDD） region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS （UG-NLDMOS） transistors.展开更多
基金Project supported by the National Science & Technology Major Project of China(No.2009ZX01033-001-003)
文摘The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS （SG-NLDMOS） transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift （NDD） region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS （UG-NLDMOS） transistors.
