An improved Monte Carlo method was used to simulate the motion of electrons in c-C4F8 and SF6 gas mixtures for pulsed townsend discharge. The electron swarm parameters such as effective ionization coefficient, -↑α a...An improved Monte Carlo method was used to simulate the motion of electrons in c-C4F8 and SF6 gas mixtures for pulsed townsend discharge. The electron swarm parameters such as effective ionization coefficient, -↑α and drift velocity over the E/N range from 280～700 Td（1Td=10^-21 V·m^2） were calculated by employing a set of cross sections available in literature. From the variation cure of -↑α with SF6 partial pressure p, the limiting field （E/N）lim of gas mixture at different gas content was determined. It is found that the limiting field of c-C4F8 and SF6 gas mixture is higher than that of pure SF6 at any SF6 mixture ratio. Simulation results show excellent agreement with experiment data available in previous literature.展开更多
文中从气体放电过程中微观粒子的运动特性出发,针对均匀电场中SF_6/CF_4混合气体的流注放电特性进行数值模拟。基于两项近似求解Boltzmann方程的方法,得到不同压强、混合比下SF_6/CF_4的电子能量分布(electron energy distribution func...文中从气体放电过程中微观粒子的运动特性出发,针对均匀电场中SF_6/CF_4混合气体的流注放电特性进行数值模拟。基于两项近似求解Boltzmann方程的方法,得到不同压强、混合比下SF_6/CF_4的电子能量分布(electron energy distribution function,EEDF)。根据EEDF计算折合电离系数和折合吸附系数,将该放电参数引入流体模型,以气体压强0.1 MPa、间隙距离5 mm为例模拟SF_6/CF_4的流注放电过程,研究放电过程中空间电子数密度随时间和空间的变化规律。结果表明:混合比一定时α/N随E/N的增大显著提高,E/N一定时混合气体中CF_4体积分数越高α/N值越大;随着电子崩向前发展,崩头的电子迅速增长,放电5 ns时电子数密度峰值达到9.7×10^(12)m^(-3),当间隙完全击穿,电极间形成等离子体导电通道,此时空间电子数密度分布基本均匀,电子数密度达到10^(17)数量级。展开更多
为分析SF_6/CF_4混合气体的饱和蒸气压与绝缘特性,进而探讨SF_6/CF_4混合气体替代SF_6气体应用于高寒地区的可行性。首先,采用全局最优化算法拟合得到了SF_6和CF_4的Antoine特性常数,然后通过Antoine蒸汽压方程和汽液平衡基本定律相结合...为分析SF_6/CF_4混合气体的饱和蒸气压与绝缘特性,进而探讨SF_6/CF_4混合气体替代SF_6气体应用于高寒地区的可行性。首先,采用全局最优化算法拟合得到了SF_6和CF_4的Antoine特性常数,然后通过Antoine蒸汽压方程和汽液平衡基本定律相结合,计算了SF_6/CF_4混合气体的饱和蒸气压特性。然后,基于Boltzmann解析法获得了SF_6/CF_4混合气体的临界击穿场强数据。最后,综合SF_6/CF_4混合气体的饱和蒸气压特性与临界击穿场强数据,讨论了SF_6/CF_4混合气体的绝缘特性及在高寒地区应用的可行性。结果表明:在低温条件下,SF_6/CF_4混合气体所允许的压力明显高于纯SF_6,从而可以获得较纯SF_6更高的绝缘强度,如–40℃时摩尔分数50%SF_6/50%CF_4混合气体和SF_6气体的饱和蒸气压分别约为0.64 MPa和0.35 MPa,相应压力下的临界击穿场强分别约为43.5 k V/mm和31.34 k V/mm,即50%SF_6/50%CF_4混合气体的绝缘强度可以达到纯SF_6气体的1.4倍,说明SF_6/CF_4混合气体采用恰当的混合比例和充气压力能够有效解决SF_6在高寒地区的液化问题。展开更多
在高纬度低温地区,由于SF_6气体出现液化,可能导致SF_6开关设备发生绝缘击穿或开断失败等事故,由此该类地区大多采用混合气体(SF_6+CF_4)开关设备。气体分解产物检测是目前设备故障定位和缺陷诊断的重要手段。为此试验以40.5 k V混合气...在高纬度低温地区,由于SF_6气体出现液化,可能导致SF_6开关设备发生绝缘击穿或开断失败等事故,由此该类地区大多采用混合气体(SF_6+CF_4)开关设备。气体分解产物检测是目前设备故障定位和缺陷诊断的重要手段。为此试验以40.5 k V混合气体断路器为试品,开展混合气体(SF_6+CF_4)不同燃弧能量下的气体分解产物试验,通过与纯SF_6气体的比较分析,探讨混合气体(SF_6+CF_4)的分解特性。研究表明:开断电弧下,SF_6+CF_4混合气体的主要分解产物为CO、CO_2、SO_2、SOF_2;分解产物各组分含量均随着燃弧能量的增加而增加;在相同的燃弧能量下,SF_6+CF_4混合气体比纯SF_6气体产生更多的碳氧化合物(CO+CO_2),而硫化物(SOF_2+SO_2)的生产量较少。展开更多
A solid ternary mixture consisting of NaF,silicon and one metal oxide such as La2O3,CeO2,Pr6O11,Nd2O3,and Y2O3 was prepared and usedas de-fluorinated reagent for CF4 decomposition.The results show that 90% conversion ...A solid ternary mixture consisting of NaF,silicon and one metal oxide such as La2O3,CeO2,Pr6O11,Nd2O3,and Y2O3 was prepared and usedas de-fluorinated reagent for CF4 decomposition.The results show that 90% conversion of CF4 can be reached initially over NaF-Si-La2O3,NaF-Si-CeO2,NaF-Si-Nd2O3,and NaF-Si-Y2O3 at 850 C.The fresh and used reagents were characterized using XRD and XPS techniques.It was found that the active components of NaF and metal oxides in NaF-Si-CeO2,NaF-Si-Pr6O11,NaF-Si-Nd2O3,and NaF-Si-Y2O3 weretransformed into inert phases of mixed metal fluorides and silicates,respectively,resulting in an ineffective utilization of these de-fluorinatedreagents,whereas no inert phases from NaF and La2O3 can be observed in the used NaF-Si-La2O3,indicating the NaF-Si-La2O3 reagent couldbe utilized more efficiently than the other reagents in CF4 decomposition.展开更多
An SF6/CF4 cyclic reactive-ion etching （RIE） method is proposed to suppress the surface roughness and to opti- mize the morphology of Ge fin, aiming at the fabrication of superior Ge FinFETs for future CMOS technolo...An SF6/CF4 cyclic reactive-ion etching （RIE） method is proposed to suppress the surface roughness and to opti- mize the morphology of Ge fin, aiming at the fabrication of superior Ge FinFETs for future CMOS technologies. The surface roughness of the Ge after RIE can be sufficiently reduced by introducing SF6-O2 etching steps into the CF4-O2 etching process, while maintaining a relatively large ratio of vertical etching over horizontal etching of the Ge. As a result, an optimized rms roughness of 0.9nm is achieved for Ge surfaces after the SF6/CF4 cyclic etching with a ratio of greater than four for vertical etching over horizontal etching of the Ge, by using a proportion of 60% for SF6-O2 etching steps.展开更多
This paper has researched the insulation characteristics of 10% c-C4F8/N2/CO2 mixtures under lightning impulse voltage by experiment. It is shown that the positive and negative lightning impulse breakdown voltages of ...This paper has researched the insulation characteristics of 10% c-C4F8/N2/CO2 mixtures under lightning impulse voltage by experiment. It is shown that the positive and negative lightning impulse breakdown voltages of 10%c-C4F8/N2/CO2 gas mixtures rise linearly as the electrode gap distance and gas pressure increase and under the same conditions, the positive lightning impulse breakdown voltage of the gas mixtures is always higher than the negative lightning impulse breakdown voltage. As the gas mixtures have a little higher liquefied temperature than SF6 and the comprehensive GWP is about 5% of SF6, and the positive and negative lightning impulse breakdown voltages can both reach 60% of SF6, 10%c-C4F8/N2/CO2 gas mixtures can be applied as insulation gas in electrical equipment such as C-GIS, GIT, GIL and so on.展开更多
文摘An improved Monte Carlo method was used to simulate the motion of electrons in c-C4F8 and SF6 gas mixtures for pulsed townsend discharge. The electron swarm parameters such as effective ionization coefficient, -↑α and drift velocity over the E/N range from 280～700 Td（1Td=10^-21 V·m^2） were calculated by employing a set of cross sections available in literature. From the variation cure of -↑α with SF6 partial pressure p, the limiting field （E/N）lim of gas mixture at different gas content was determined. It is found that the limiting field of c-C4F8 and SF6 gas mixture is higher than that of pure SF6 at any SF6 mixture ratio. Simulation results show excellent agreement with experiment data available in previous literature.
文摘文中从气体放电过程中微观粒子的运动特性出发,针对均匀电场中SF_6/CF_4混合气体的流注放电特性进行数值模拟。基于两项近似求解Boltzmann方程的方法,得到不同压强、混合比下SF_6/CF_4的电子能量分布(electron energy distribution function,EEDF)。根据EEDF计算折合电离系数和折合吸附系数,将该放电参数引入流体模型,以气体压强0.1 MPa、间隙距离5 mm为例模拟SF_6/CF_4的流注放电过程,研究放电过程中空间电子数密度随时间和空间的变化规律。结果表明:混合比一定时α/N随E/N的增大显著提高,E/N一定时混合气体中CF_4体积分数越高α/N值越大;随着电子崩向前发展,崩头的电子迅速增长,放电5 ns时电子数密度峰值达到9.7×10^(12)m^(-3),当间隙完全击穿,电极间形成等离子体导电通道,此时空间电子数密度分布基本均匀,电子数密度达到10^(17)数量级。
文摘为分析SF_6/CF_4混合气体的饱和蒸气压与绝缘特性,进而探讨SF_6/CF_4混合气体替代SF_6气体应用于高寒地区的可行性。首先,采用全局最优化算法拟合得到了SF_6和CF_4的Antoine特性常数,然后通过Antoine蒸汽压方程和汽液平衡基本定律相结合,计算了SF_6/CF_4混合气体的饱和蒸气压特性。然后,基于Boltzmann解析法获得了SF_6/CF_4混合气体的临界击穿场强数据。最后,综合SF_6/CF_4混合气体的饱和蒸气压特性与临界击穿场强数据,讨论了SF_6/CF_4混合气体的绝缘特性及在高寒地区应用的可行性。结果表明:在低温条件下,SF_6/CF_4混合气体所允许的压力明显高于纯SF_6,从而可以获得较纯SF_6更高的绝缘强度,如–40℃时摩尔分数50%SF_6/50%CF_4混合气体和SF_6气体的饱和蒸气压分别约为0.64 MPa和0.35 MPa,相应压力下的临界击穿场强分别约为43.5 k V/mm和31.34 k V/mm,即50%SF_6/50%CF_4混合气体的绝缘强度可以达到纯SF_6气体的1.4倍,说明SF_6/CF_4混合气体采用恰当的混合比例和充气压力能够有效解决SF_6在高寒地区的液化问题。
文摘在高纬度低温地区,由于SF_6气体出现液化,可能导致SF_6开关设备发生绝缘击穿或开断失败等事故,由此该类地区大多采用混合气体(SF_6+CF_4)开关设备。气体分解产物检测是目前设备故障定位和缺陷诊断的重要手段。为此试验以40.5 k V混合气体断路器为试品,开展混合气体(SF_6+CF_4)不同燃弧能量下的气体分解产物试验,通过与纯SF_6气体的比较分析,探讨混合气体(SF_6+CF_4)的分解特性。研究表明:开断电弧下,SF_6+CF_4混合气体的主要分解产物为CO、CO_2、SO_2、SOF_2;分解产物各组分含量均随着燃弧能量的增加而增加;在相同的燃弧能量下,SF_6+CF_4混合气体比纯SF_6气体产生更多的碳氧化合物(CO+CO_2),而硫化物(SOF_2+SO_2)的生产量较少。
基金supported by the National Natural Science Foundation of China (No. 20976149)
文摘A solid ternary mixture consisting of NaF,silicon and one metal oxide such as La2O3,CeO2,Pr6O11,Nd2O3,and Y2O3 was prepared and usedas de-fluorinated reagent for CF4 decomposition.The results show that 90% conversion of CF4 can be reached initially over NaF-Si-La2O3,NaF-Si-CeO2,NaF-Si-Nd2O3,and NaF-Si-Y2O3 at 850 C.The fresh and used reagents were characterized using XRD and XPS techniques.It was found that the active components of NaF and metal oxides in NaF-Si-CeO2,NaF-Si-Pr6O11,NaF-Si-Nd2O3,and NaF-Si-Y2O3 weretransformed into inert phases of mixed metal fluorides and silicates,respectively,resulting in an ineffective utilization of these de-fluorinatedreagents,whereas no inert phases from NaF and La2O3 can be observed in the used NaF-Si-La2O3,indicating the NaF-Si-La2O3 reagent couldbe utilized more efficiently than the other reagents in CF4 decomposition.
基金Supported by the National Basic Research Program of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant No 61376097+1 种基金the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No20130091110025
文摘An SF6/CF4 cyclic reactive-ion etching （RIE） method is proposed to suppress the surface roughness and to opti- mize the morphology of Ge fin, aiming at the fabrication of superior Ge FinFETs for future CMOS technologies. The surface roughness of the Ge after RIE can be sufficiently reduced by introducing SF6-O2 etching steps into the CF4-O2 etching process, while maintaining a relatively large ratio of vertical etching over horizontal etching of the Ge. As a result, an optimized rms roughness of 0.9nm is achieved for Ge surfaces after the SF6/CF4 cyclic etching with a ratio of greater than four for vertical etching over horizontal etching of the Ge, by using a proportion of 60% for SF6-O2 etching steps.
基金supported by National Natural Science Foundation of China (No. 51337006)
文摘This paper has researched the insulation characteristics of 10% c-C4F8/N2/CO2 mixtures under lightning impulse voltage by experiment. It is shown that the positive and negative lightning impulse breakdown voltages of 10%c-C4F8/N2/CO2 gas mixtures rise linearly as the electrode gap distance and gas pressure increase and under the same conditions, the positive lightning impulse breakdown voltage of the gas mixtures is always higher than the negative lightning impulse breakdown voltage. As the gas mixtures have a little higher liquefied temperature than SF6 and the comprehensive GWP is about 5% of SF6, and the positive and negative lightning impulse breakdown voltages can both reach 60% of SF6, 10%c-C4F8/N2/CO2 gas mixtures can be applied as insulation gas in electrical equipment such as C-GIS, GIT, GIL and so on.
