The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variatio...The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.展开更多
Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, ...Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.展开更多
Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devic...Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devices: open-circuit?voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),?areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion?efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This?result is validated by experimental results?(20%). At 300 K, when the thickness?of?the buffer layer (CdS, ZnS, ZnSe,?InSe2) increases from 100 nm to 500?nm,?with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,?with the other parameters maintained?constant, both open circuit voltage and conversion efficiency also decrease.?The?effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases?of 3% than a single buffer CdS.展开更多
This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program （SCAPS-1D）. We have performedan optimization of the performances of...This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program （SCAPS-1D）. We have performedan optimization of the performances of the standard Mo/Cu（In, Ga）Se2/CdS/ZnO solar cells using current-voltage and quantum efficiency methods. With a CuIn..7Ga0.3Se2 absorber, we have investigated the buffer layer thickness, temperature, series and shunt resistances effects on the open-circuit voltage, short-circuit current density, fill factor, conversion efficiency and quantum efficiency. The simulated results show good performances when the thickness of the buffer layer is in the range of 10-40 um due to the reduction of absorption in the short wavelenghts （380-500 nm）. High performances of the model is obtained when the series and shunt resistances is in the range of 0.1-1 Ω·cm^2 and 1,000 Ω·cm^2, respectively. Under these conditions, the cell can theoretically operate under an ambiant temperature of 370 K without any loss of its performances.展开更多
In the present work,we have simulated the structure i-ZnO/n-CdS/p-CZTS/Mo based on copper-zinc-tin-sulphur(CZTS).CZTS has become a candidate material for new photovoltaic solar cell because of its excellent properties...In the present work,we have simulated the structure i-ZnO/n-CdS/p-CZTS/Mo based on copper-zinc-tin-sulphur(CZTS).CZTS has become a candidate material for new photovoltaic solar cell because of its excellent properties.We have used solar cell capacitance simulator one-dimensional(SCAPS-1D)to examine the impact of bandgap and thickness of CZTS on the performance of solar cells.It has been obtained the efficiency of 15.04% for the optimum thickness of 2,000 nm and the bandgap of 1.4 eV.For the best performance cell FF = 76.28%,Jsc = 23.51 mA/cm2,and Voc = 0.84 V.展开更多
In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of ...In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3. In this work,?we designed a tin-based perovskite simulated model with the novel architecture of (TCO)/buffer (TiO2)/absorber (Perovskite)/hole transport material (HTM) and analyzed using the solar cell capacitance simulator (SCAPS-1D), which is well adapted to study the photovoltaic architectures. In the paper, we studied the influences of perovskite thickness and the doping concentration on the solar cell performance through theoretical analysis and device simulation. The results are indicating that the lead-free CH3NH3SnI3 is having the greatpotential to be an absorber layer with suitable inorganic hole transport materials?like CuI (PCE: 23.25%), Cu2O (PCE: 19.17%), organic hole transport materials?like spiro-OMETAD (PCE: 23.76%) and PTAA (PCE: 23.74%) to achieve high?efficiency. This simulation model will become a good guide for the fabrication?of high efficiency tin-based perovskite solar. The results show that the lead-free CH3NH3SnI3 is a potential environmentally friendly solar cells with high efficiency.展开更多
In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the...In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.展开更多
文摘The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.
文摘Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.
文摘Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devices: open-circuit?voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),?areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion?efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This?result is validated by experimental results?(20%). At 300 K, when the thickness?of?the buffer layer (CdS, ZnS, ZnSe,?InSe2) increases from 100 nm to 500?nm,?with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,?with the other parameters maintained?constant, both open circuit voltage and conversion efficiency also decrease.?The?effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases?of 3% than a single buffer CdS.
文摘This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program （SCAPS-1D）. We have performedan optimization of the performances of the standard Mo/Cu（In, Ga）Se2/CdS/ZnO solar cells using current-voltage and quantum efficiency methods. With a CuIn..7Ga0.3Se2 absorber, we have investigated the buffer layer thickness, temperature, series and shunt resistances effects on the open-circuit voltage, short-circuit current density, fill factor, conversion efficiency and quantum efficiency. The simulated results show good performances when the thickness of the buffer layer is in the range of 10-40 um due to the reduction of absorption in the short wavelenghts （380-500 nm）. High performances of the model is obtained when the series and shunt resistances is in the range of 0.1-1 Ω·cm^2 and 1,000 Ω·cm^2, respectively. Under these conditions, the cell can theoretically operate under an ambiant temperature of 370 K without any loss of its performances.
文摘In the present work,we have simulated the structure i-ZnO/n-CdS/p-CZTS/Mo based on copper-zinc-tin-sulphur(CZTS).CZTS has become a candidate material for new photovoltaic solar cell because of its excellent properties.We have used solar cell capacitance simulator one-dimensional(SCAPS-1D)to examine the impact of bandgap and thickness of CZTS on the performance of solar cells.It has been obtained the efficiency of 15.04% for the optimum thickness of 2,000 nm and the bandgap of 1.4 eV.For the best performance cell FF = 76.28%,Jsc = 23.51 mA/cm2,and Voc = 0.84 V.
文摘In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3. In this work,?we designed a tin-based perovskite simulated model with the novel architecture of (TCO)/buffer (TiO2)/absorber (Perovskite)/hole transport material (HTM) and analyzed using the solar cell capacitance simulator (SCAPS-1D), which is well adapted to study the photovoltaic architectures. In the paper, we studied the influences of perovskite thickness and the doping concentration on the solar cell performance through theoretical analysis and device simulation. The results are indicating that the lead-free CH3NH3SnI3 is having the greatpotential to be an absorber layer with suitable inorganic hole transport materials?like CuI (PCE: 23.25%), Cu2O (PCE: 19.17%), organic hole transport materials?like spiro-OMETAD (PCE: 23.76%) and PTAA (PCE: 23.74%) to achieve high?efficiency. This simulation model will become a good guide for the fabrication?of high efficiency tin-based perovskite solar. The results show that the lead-free CH3NH3SnI3 is a potential environmentally friendly solar cells with high efficiency.
文摘In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.
