The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variatio...The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.展开更多
In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance sim...In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.展开更多
Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, ...Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.展开更多
This study presents a detailed comparative analysis of three electron transport layer(ETL)materials for perovskite solar cells(PSCs),namely titanium dioxide(TiO_(2)),barium titanate(BaTiO_(3)or BTO),and strontium-dope...This study presents a detailed comparative analysis of three electron transport layer(ETL)materials for perovskite solar cells(PSCs),namely titanium dioxide(TiO_(2)),barium titanate(BaTiO_(3)or BTO),and strontium-doped barium titan-ate(Ba_(1−x)Sr_(x)TiO_(3)or BST),and their impact on the quantum efficiency(QE)and power conversion efficiency(PCE)of CH_(3)NH_(3)PbI_(3)(MAPbI_(3))PSCs.The optimized structure demonstrates that devices utilizing BST as an ETL achieved the highest PCE of 29.85%,exhibiting superior thermal stability with the lowest temperature coefficient of−0.43%/K.This temperature-induced degradation is comparable to that of commercially available silicon cells.Furthermore,BST-based ETLs show 29.50%and 26.48%higher PCE than those of TiO_(2)-based and BTO-based ETLs.The enhanced internal QE and favorable current density–voltage(J–V)characteristics of BST compared with those of TiO_(2)and BTO are attributed to its improved charge carrier separation,reduced recombination rates,and robust electrical characteristics under varied environmental conditions.Furthermore,the electric field and generation rate of the BST-based ETLs show a more favorable distribution than those of the TiO_(2)-based and BTO-based ETLs.These findings provide significant insights into the role of different ETLs in enhancing QE,indicating that BST is a superior ETL that enhances both the efficiency and stability of PSCs.This study contributes to the understanding of how perovskite-structured ETLs can be used to design and optimize highly efficient and stable photovoltaic devices.展开更多
Recharge and discharge, such as rainfall infiltration and evapotranspiration in vertical direction, are major processes of water cycle in the shallow groundwater area of the North China Plain. During these processes, ...Recharge and discharge, such as rainfall infiltration and evapotranspiration in vertical direction, are major processes of water cycle in the shallow groundwater area of the North China Plain. During these processes, soil water movement in the unsaturated zone plays an important role in the transformation from rainfall infiltration to groundwater. The soil water movement models were developed by using HYDRUS-1D software at two typical experimental sites in Cangzhou(CZ) and Hengshui(HS) with different soil, vegetation and similar climate conditions. As shown in the results, the comparison in precipitation infiltration features between the two sites is distinct. The soil water experiences strong evaporation after precipitation infiltration, which accounts for 63% of the total infiltration at the HS site where the soil is homogenous. It is this strong evaporation effect that leads to slight increase of soil water storage. At the CZ site, where the soil is heterogeneous, the evaporation effect exists from July to October of the simulation period. The total evaporation accounts for 33% of the total infiltration, and the evaporation rate is slow. At the end of the simulation period, the soil water storage increases and the water table decreases, indicating a strong storage capacity at this site.展开更多
In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the...In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.展开更多
In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of ...In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3. In this work,?we designed a tin-based perovskite simulated model with the novel architecture of (TCO)/buffer (TiO2)/absorber (Perovskite)/hole transport material (HTM) and analyzed using the solar cell capacitance simulator (SCAPS-1D), which is well adapted to study the photovoltaic architectures. In the paper, we studied the influences of perovskite thickness and the doping concentration on the solar cell performance through theoretical analysis and device simulation. The results are indicating that the lead-free CH3NH3SnI3 is having the greatpotential to be an absorber layer with suitable inorganic hole transport materials?like CuI (PCE: 23.25%), Cu2O (PCE: 19.17%), organic hole transport materials?like spiro-OMETAD (PCE: 23.76%) and PTAA (PCE: 23.74%) to achieve high?efficiency. This simulation model will become a good guide for the fabrication?of high efficiency tin-based perovskite solar. The results show that the lead-free CH3NH3SnI3 is a potential environmentally friendly solar cells with high efficiency.展开更多
In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as J<sub>sc</sub>, V<sub>oc</sub>, QE and η of the quaternary system C...In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as J<sub>sc</sub>, V<sub>oc</sub>, QE and η of the quaternary system Cu(In,Ga)Se<sub>2</sub> solar cells. The performance of Cu(In,Ga)Se<sub>2</sub>solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: J<sub>SC</sub> = 34.6 mA/cm<sup>2</sup>, V<sub>OC</sub> = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density J<sub>SC</sub>. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.展开更多
Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devic...Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devices: open-circuit?voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),?areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion?efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This?result is validated by experimental results?(20%). At 300 K, when the thickness?of?the buffer layer (CdS, ZnS, ZnSe,?InSe2) increases from 100 nm to 500?nm,?with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,?with the other parameters maintained?constant, both open circuit voltage and conversion efficiency also decrease.?The?effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases?of 3% than a single buffer CdS.展开更多
Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency a...Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-effective CZTS SC designs.展开更多
文摘The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.
文摘In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.
文摘Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10<sup>14</sup> cm<sup>-3</sup>. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J<sub>SC</sub>), open circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.
基金funded by the Geran Universiti Penyelidikan(GUP),under the grant number GUP-2022-011 funded by the Universiti Kebangsaan Malaysia。
文摘This study presents a detailed comparative analysis of three electron transport layer(ETL)materials for perovskite solar cells(PSCs),namely titanium dioxide(TiO_(2)),barium titanate(BaTiO_(3)or BTO),and strontium-doped barium titan-ate(Ba_(1−x)Sr_(x)TiO_(3)or BST),and their impact on the quantum efficiency(QE)and power conversion efficiency(PCE)of CH_(3)NH_(3)PbI_(3)(MAPbI_(3))PSCs.The optimized structure demonstrates that devices utilizing BST as an ETL achieved the highest PCE of 29.85%,exhibiting superior thermal stability with the lowest temperature coefficient of−0.43%/K.This temperature-induced degradation is comparable to that of commercially available silicon cells.Furthermore,BST-based ETLs show 29.50%and 26.48%higher PCE than those of TiO_(2)-based and BTO-based ETLs.The enhanced internal QE and favorable current density–voltage(J–V)characteristics of BST compared with those of TiO_(2)and BTO are attributed to its improved charge carrier separation,reduced recombination rates,and robust electrical characteristics under varied environmental conditions.Furthermore,the electric field and generation rate of the BST-based ETLs show a more favorable distribution than those of the TiO_(2)-based and BTO-based ETLs.These findings provide significant insights into the role of different ETLs in enhancing QE,indicating that BST is a superior ETL that enhances both the efficiency and stability of PSCs.This study contributes to the understanding of how perovskite-structured ETLs can be used to design and optimize highly efficient and stable photovoltaic devices.
基金financially supported by the 100-Talent Project of Chinese Academy of Sciencesthe Key Program of the National Natural Science Foundation of China (No.41471028)
文摘Recharge and discharge, such as rainfall infiltration and evapotranspiration in vertical direction, are major processes of water cycle in the shallow groundwater area of the North China Plain. During these processes, soil water movement in the unsaturated zone plays an important role in the transformation from rainfall infiltration to groundwater. The soil water movement models were developed by using HYDRUS-1D software at two typical experimental sites in Cangzhou(CZ) and Hengshui(HS) with different soil, vegetation and similar climate conditions. As shown in the results, the comparison in precipitation infiltration features between the two sites is distinct. The soil water experiences strong evaporation after precipitation infiltration, which accounts for 63% of the total infiltration at the HS site where the soil is homogenous. It is this strong evaporation effect that leads to slight increase of soil water storage. At the CZ site, where the soil is heterogeneous, the evaporation effect exists from July to October of the simulation period. The total evaporation accounts for 33% of the total infiltration, and the evaporation rate is slow. At the end of the simulation period, the soil water storage increases and the water table decreases, indicating a strong storage capacity at this site.
文摘In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.
文摘In recent years, there has been an unprecedented rise in the performance of metal halide perovskite solar cells. The lead-free perovskite solar cells (PSCs) have drawn much research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3. In this work,?we designed a tin-based perovskite simulated model with the novel architecture of (TCO)/buffer (TiO2)/absorber (Perovskite)/hole transport material (HTM) and analyzed using the solar cell capacitance simulator (SCAPS-1D), which is well adapted to study the photovoltaic architectures. In the paper, we studied the influences of perovskite thickness and the doping concentration on the solar cell performance through theoretical analysis and device simulation. The results are indicating that the lead-free CH3NH3SnI3 is having the greatpotential to be an absorber layer with suitable inorganic hole transport materials?like CuI (PCE: 23.25%), Cu2O (PCE: 19.17%), organic hole transport materials?like spiro-OMETAD (PCE: 23.76%) and PTAA (PCE: 23.74%) to achieve high?efficiency. This simulation model will become a good guide for the fabrication?of high efficiency tin-based perovskite solar. The results show that the lead-free CH3NH3SnI3 is a potential environmentally friendly solar cells with high efficiency.
文摘In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as J<sub>sc</sub>, V<sub>oc</sub>, QE and η of the quaternary system Cu(In,Ga)Se<sub>2</sub> solar cells. The performance of Cu(In,Ga)Se<sub>2</sub>solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: J<sub>SC</sub> = 34.6 mA/cm<sup>2</sup>, V<sub>OC</sub> = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density J<sub>SC</sub>. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.
文摘Numerical simulation has been used to investigate the effect of different buffer?layer components on the performance of CuInGaSe2?solar cells?with SCAPS-1D?software. The main photovoltaic parameters of simulated devices: open-circuit?voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),?areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion?efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This?result is validated by experimental results?(20%). At 300 K, when the thickness?of?the buffer layer (CdS, ZnS, ZnSe,?InSe2) increases from 100 nm to 500?nm,?with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,?with the other parameters maintained?constant, both open circuit voltage and conversion efficiency also decrease.?The?effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases?of 3% than a single buffer CdS.
文摘Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-effective CZTS SC designs.
