In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer prov...In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).展开更多
The frequency dependent of the forward and reverse bias capacitance-voltage （C-V） and conductance-voltage （G/w-V） charac- teristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz a...The frequency dependent of the forward and reverse bias capacitance-voltage （C-V） and conductance-voltage （G/w-V） charac- teristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of-5 - 5 V at room temperature. The effects of surface states （Nss） and series resistance （R0 on C-V and G/w-V characteristics have been in- vestigated in detail. The frequency dependent Nss and Rs profiles were obtained for various applied bias voltages. The experi- mental results show that the main electrical parameters of Au/p-InP SBD such as barrier height （gOB）, the density of acceptor concentration （NA）, Nss and Rs were found strongly frequency and voltage dependent. The values of C and G/w decrease with increasing frequency due to a continuous distribution of Nss localized at the metal/semiconductor （M/S） interface. The effect of Rs on C and G is found considerably high especially at high frequencies. Therefore, the high frequencies of the values of C and G were corrected for the effect of Rs in the whole measured bias range to obtain the real diode capacitance Cc and conductance Gc using the Nicollian and Goetzberger technique. The distribution profile of Rs-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of Nss at the M/S interface.展开更多
In this letter,we demonstrate the effect ofγirradiation on the lateral AlGaN/GaN Schottky barrier diodes(SBDs)with self-terminated recessed anode structure and low work-function metal tungsten(W)as anode.For a compre...In this letter,we demonstrate the effect ofγirradiation on the lateral AlGaN/GaN Schottky barrier diodes(SBDs)with self-terminated recessed anode structure and low work-function metal tungsten(W)as anode.For a comprehensive evaluation of the radiation-resistance performance of the device,the total dose ofγirradiation is up to 100 kGy with irradiation time of 20 h.Attributed to the barrier lowering effect of the W/GaN interface induced byγirradiation observed in the experiment,the extracted turnon voltage(VON)defined at anode forward current of 1 mA decreases from 0.47 to 0.43 V.Meanwhile,benefiting from the reinforced Schottky interface treated by post-anode-annealing,a high breakdown voltage(BV)of 1.75 kV is obtained for theγ-irradiated AlGaN/GaN SBD,which shows the promising application for the deep-space radiation environment and promotes the development of radiation-resistance research for GaN SBDs.展开更多
基金supported by National Natural Science Foundation of China under grant U23A20361Key Area R&D Program of Guangdong Province under grant 2022B0701180001.
文摘In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).
基金supported by the Scientific and Technological Research Council of Turkey (TUBITAK)
文摘The frequency dependent of the forward and reverse bias capacitance-voltage （C-V） and conductance-voltage （G/w-V） charac- teristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of-5 - 5 V at room temperature. The effects of surface states （Nss） and series resistance （R0 on C-V and G/w-V characteristics have been in- vestigated in detail. The frequency dependent Nss and Rs profiles were obtained for various applied bias voltages. The experi- mental results show that the main electrical parameters of Au/p-InP SBD such as barrier height （gOB）, the density of acceptor concentration （NA）, Nss and Rs were found strongly frequency and voltage dependent. The values of C and G/w decrease with increasing frequency due to a continuous distribution of Nss localized at the metal/semiconductor （M/S） interface. The effect of Rs on C and G is found considerably high especially at high frequencies. Therefore, the high frequencies of the values of C and G were corrected for the effect of Rs in the whole measured bias range to obtain the real diode capacitance Cc and conductance Gc using the Nicollian and Goetzberger technique. The distribution profile of Rs-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of Nss at the M/S interface.
基金supported in part by the Key Research and Development Projects of Shaanxi Province(Grant No.2024GX-YBXM-082)in part by the Natural Science Basic Research Program of Shaanxi Province(Grant No.2023-JC-JQ-56)+2 种基金in part by the Fundamental Research Funds for the Central Universities(Grant Nos.QTZX23076,XJSJ25014)in part by the funding of the National Key Research and Development Program of China(Grant No.2022YFB3604400)in part by the China Postdoctoral Science Foundation(Grant No.2021TQ0256).
文摘In this letter,we demonstrate the effect ofγirradiation on the lateral AlGaN/GaN Schottky barrier diodes(SBDs)with self-terminated recessed anode structure and low work-function metal tungsten(W)as anode.For a comprehensive evaluation of the radiation-resistance performance of the device,the total dose ofγirradiation is up to 100 kGy with irradiation time of 20 h.Attributed to the barrier lowering effect of the W/GaN interface induced byγirradiation observed in the experiment,the extracted turnon voltage(VON)defined at anode forward current of 1 mA decreases from 0.47 to 0.43 V.Meanwhile,benefiting from the reinforced Schottky interface treated by post-anode-annealing,a high breakdown voltage(BV)of 1.75 kV is obtained for theγ-irradiated AlGaN/GaN SBD,which shows the promising application for the deep-space radiation environment and promotes the development of radiation-resistance research for GaN SBDs.
