AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate vol...AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm. The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively. The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.展开更多
Sapphire hemispherical domes are machined through milling and shaping using brazed diamond tools.A mathematical model describing roughness for this processing method is established,and the relationship between roughne...Sapphire hemispherical domes are machined through milling and shaping using brazed diamond tools.A mathematical model describing roughness for this processing method is established,and the relationship between roughness and its influencing factors is analyzed.Experiments on the hemispherical dome shaping process are conducted to validate the model,analyzing the variation in roughness under different tool and workpiece rotational speeds.The results are consistent with the predictions of the established roughness model,suggesting that the model can be used to guide subsequent process experiments.Milling and shaping efficiency using brazed diamond tools typically can reach 14 g/min.The machined sapphire surfaces exhibit relatively few microcracks and minimal damage,with almost all exclusively visible grooves resulting from brittle fracture removal.The surface roughness after machining is below 2.5μm.Milling sapphire domes with brazed diamond tools represents a novel shaping technique characterized by high efficiency and high quality.展开更多
High-energy continuous wave(CW)lasers are mostly used in laser damage applications,but efficient laser ablation of transparent materials is challenging due to low optical absorption.Considering the potential of femtos...High-energy continuous wave(CW)lasers are mostly used in laser damage applications,but efficient laser ablation of transparent materials is challenging due to low optical absorption.Considering the potential of femtosecond(fs)laser-induced air filament for high-peak laser transmission over long distances,femtosecond(fs)laser-induced air filaments are combined with a millisecond(ms)laser to form an fs-ms CPL,enhancing the efficiency of sapphire ablation through synchronized spatial-temporal focusing.Experimental results show that ablation efficiency increases with the ms peak power and duty ratio.Excessive thermal stress leads to fragmentation of the sapphire when the ms duty ratio is over 30%at the peak power of 800 W,or when the peak power is over 500 W at a duty ratio of 100%.Also,the mechanism of high-efficiency damage is revealed through in-situ high-speed imaging.According to it,the ablation process went through 4 stages within 1.5 ms:defect-creating,melting and ablation,spattering,and fragmentation.Finally,the equivalent ablation efficiency of the fs-ms CPL is as high as 1.73×10^(7)μm^(3)/J,about 28 times higher compared to the fs laser only.The CPL damage method explored in this paper can provide theoretical guidance for efficient laser damage of transparent materials.展开更多
We present a systematic experimental investigation of temporal contrast enhancement techniques for petawatt(PW)-class Ti:sapphire lasers utilizing a double chirped-pulse amplification(CPA)architecture.Particular atten...We present a systematic experimental investigation of temporal contrast enhancement techniques for petawatt(PW)-class Ti:sapphire lasers utilizing a double chirped-pulse amplification(CPA)architecture.Particular attention is given to pre-pulses induced by post-pulses originating in the first CPA stage.One conventional and two advanced pulse-cleaning strategies are quantitatively evaluated:(i)a saturable absorber(SA),(ii)a femtosecond optical parametric amplifier(OPA)employing the idler pulse in a two-stage configuration,and(iii)sum-frequency generation(SFG)combining the signal and idler pulses from the OPA.All techniques are implemented and evaluated using the J-KAREN-P laser system with an output energy of about 20 J.To the best of our knowledge,this is the first report to directly and systematically compare the contrast of pre-pulses originating from the first CPA stage under identical experimental conditions in a high-energy PW-class laser facility.The results offer crucial insights into contrast optimization for future high-field applications.展开更多
Two-dimensional(2D)MoO_(2),a binary nonlayered material,has been extensively studied for potential applications in catalysis and electronics.However,the preparation of 2D MoO_(2) remains challenging.Herein,we report t...Two-dimensional(2D)MoO_(2),a binary nonlayered material,has been extensively studied for potential applications in catalysis and electronics.However,the preparation of 2D MoO_(2) remains challenging.Herein,we report the growth of 2D MoO_(2) flakes with rhombic morphology on the sapphire substrate via a chemical vapor deposition(CVD)method.Atomic force microscopy shows the CVDgrown MoO_(2) flakes with thin thickness.The CVD-obtained MoO_(2) with a stoichiometric ratio of 1:2 is verified using energy-dispersive X-ray spectroscopy.Scanning transmission electron microscopy(STEM)characterization reveals the high-quality,single-crystal nature of the CVDderived 2D MoO_(2) flakes.展开更多
The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center （S...The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center （SAPMAC） method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.展开更多
MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency （f...MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency （fT） of 77GHz are obtained for a 0.25μm gate-length single finger device. These power devices exhibit a maximum drain current density as high as 1.07A/mm. On-chip testing yielded a continuous-wave output power of 27. 04dBm at 8GHz with an associated power-added efficiency of 26. 5% for an 80 × 10μm device.展开更多
A crystalline sapphire （Al2O3） boule （Ф10 × 80mm^3） grown by the temperature gradient technique （TGT） is a bit colored due to carbon volatilization from the graphite heater at high temperatures and the abs...A crystalline sapphire （Al2O3） boule （Ф10 × 80mm^3） grown by the temperature gradient technique （TGT） is a bit colored due to carbon volatilization from the graphite heater at high temperatures and the absorption of transitional metal inclusions in the raw material. The sapphire becomes colorless and transparent after decolorization and decarbonization in successive annealings in air and hydrogen at high temperatures. The quality, optical transmissivity,and homogeneity of the sapphire are remarkably improved.展开更多
Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm c...Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm common gate device.The second gate bias will not only remarkably affect saturated current and transconductance,but also realize power gain control.Cascode device exhibits a slight lower of f T,a less feedback,a largely greater of maximum available gain and a higher impedance compare to that of common source device.展开更多
The Mamfe Basin has been the subject of many studies,but some debates persist,especially concerning the stratigraphic nomenclature,corundum origin,and marine transgression.The aims of this work are(1)to propose a new ...The Mamfe Basin has been the subject of many studies,but some debates persist,especially concerning the stratigraphic nomenclature,corundum origin,and marine transgression.The aims of this work are(1)to propose a new lithostratigraphic nomenclature of the Mamfe Basin formation based on new field observations,(2)to determine the source rock distribution and the origin of gem deposits and(3)to correlate the Cameroon section of the Mamfe Basin with the Nigerian deposits.The main results show that the name Manyu River Group is more appropriate as the Manyu River crosses all the facies in the Mamfe sedimentary Basin belonging to the Manyu Division.According to the facies analysis,the age of deposition,the mineralogic and geochemical data such as the V vs.Al2O3andΣREE vs.Al_(2)O_(3),TiO_(2)MgO,Na_(2)O,P_(2)O_(5),and CaO diagrams,this Group is composed of at least five Formations,including four Cretaceous Formations,from bottom to top:the Etoko Formation(alluvial and fluvial channel to fluvio-lacustrine deposits),the Nfaitok Formation(lagoonal deposits),the Bachuo Ntai Formation(fluvial braided channels or fluvio-deltaic environment)and the Eyumojock/NsanaragatiFormation(fluvio-lacustrine deposits)and the new Cenozoic Formation named Bakebe Formation(fluvio-lacustrine deposits).The gem minerals such as corundum,rutile,or tourmaline in the Cretaceous deposits of the Mamfe Basin are mainly detrital as indicated by the presence of worn shapes and fragments of these minerals.The presence of sapphire in the AlboCenomanian deposits indicates a Precambrian age of the felsic source rock,likely the plutonic rocks such as granite or pegmatite as indicated by the abundance of tourmaline and high LREE/HREE ratios(14.81–34.29)and slightly negative and positive Eu anomalies(0.85–1.15).This marine incursion in the Mamfe Basin was probably from West Nigeria,according to the geographic location of the Mamfe Basin and the general palaeogeographic evolution of the Benue Trough.展开更多
Heteroepitaxial GaN films are grown on sapphire （0001） substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that th...Heteroepitaxial GaN films are grown on sapphire （0001） substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional （3D） island mode to two-dimensional （2D） layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The ll0-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.展开更多
Gallium Nitride film was successfully separated from sapphire substrate by laser radiation. The absorption of the 248 nm radiation by the GaN at the interface results in rapid thermal decomposition of interfacial laye...Gallium Nitride film was successfully separated from sapphire substrate by laser radiation. The absorption of the 248 nm radiation by the GaN at the interface results in rapid thermal decomposition of interfacial layer, yielding metallic Ga and N2 gas. The substrate can be easily removed by heating above the Ga melting point (29°C). X-ray diffraction, atomic force microscopy and photoluminescence of GaN before and after lift-off process have been performed, which demonstrated that the separation and transfer process do not alter the structural quality of the GaN films. And further discussions on the threshold energy and crack-free strategies of laser lift-off process have also been presented.展开更多
Transparent brittle materials such as glass and sapphire are widely concerned and applied in consumer electronics, optoelectronic devices, etc. due to their excellent physical and chemical stability and good transpare...Transparent brittle materials such as glass and sapphire are widely concerned and applied in consumer electronics, optoelectronic devices, etc. due to their excellent physical and chemical stability and good transparency. Growing research attention has been paid to developing novel methods for high-precision and high-quality machining of transparent brittle materials in the past few decades. Among the various techniques, laser machining has been proved to be an effective and flexible way to process all kinds of transparent brittle materials. In this review, a series of laser machining methods, e.g. laser full cutting, laser scribing, laser stealth dicing, laser filament, laser induced backside dry etching (LIBDE), and laser induced backside wet etching (LIBWE) are summarized. Additionally, applications of these techniques in micromachining, drilling and cutting, and patterning are introduced in detail. Current challenges and future prospects in this field are also discussed.展开更多
High rate （〉 50 μm/h） growth of homoepitaxial single-crystal diamond （SCD） is carried out by microwave plasma chemical vapour deposition （MPCVD） with added nitrogen in the reactant gases of methane and hydroge...High rate （〉 50 μm/h） growth of homoepitaxial single-crystal diamond （SCD） is carried out by microwave plasma chemical vapour deposition （MPCVD） with added nitrogen in the reactant gases of methane and hydrogen, using a polyerystalline-CVD-diamond-film-made seed holder. Photolumineseenee results indicate that the nitrogen concentration is spatially inhomogeneous in a large scale, either on the top surface or in the bulk of those as-grown SCDs. The presence of N-distribution is attributed to the facts： （i） a difference in N-incorporation efficiency and （ii） N-diffusion, resulting from the local growth temperatures changed during the high-rate deposition process. In addition, the formed nitrogen-vacancy eentres play a crucial role in N-diffusion through the growing crystal. Based on the N-distribution observed in the as-grown crystals, we propose a simple method to distinguish natural diamonds and man-made CVD SCDs. Finally, the disappearance of void defect on the top surface of SCDs is discussed to be related to a filling-in mechanism.展开更多
Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ ...Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).展开更多
文摘AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm. The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively. The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.
基金supported by the Na-tional Natural Science Foundation of China(No.51675457)the Jiangsu Key Laboratory of Precision and Micro-man-ufacturing Technology.
文摘Sapphire hemispherical domes are machined through milling and shaping using brazed diamond tools.A mathematical model describing roughness for this processing method is established,and the relationship between roughness and its influencing factors is analyzed.Experiments on the hemispherical dome shaping process are conducted to validate the model,analyzing the variation in roughness under different tool and workpiece rotational speeds.The results are consistent with the predictions of the established roughness model,suggesting that the model can be used to guide subsequent process experiments.Milling and shaping efficiency using brazed diamond tools typically can reach 14 g/min.The machined sapphire surfaces exhibit relatively few microcracks and minimal damage,with almost all exclusively visible grooves resulting from brittle fracture removal.The surface roughness after machining is below 2.5μm.Milling sapphire domes with brazed diamond tools represents a novel shaping technique characterized by high efficiency and high quality.
基金Project(52105498) supported by the National Natural Science Foundation of ChinaProject(2021RC3074) supported by the Science and Technology Innovation Program of Hunan Province,China+2 种基金Project(2023YFB4605500) supported by the National Key Research and Development Program of ChinaProject(AHL2022KF04) supported by the Advanced Laser Technology Laboratory of Anhui Province,ChinaProject(kq2402089) supported by the Changsha Natural Science Foundation,China。
文摘High-energy continuous wave(CW)lasers are mostly used in laser damage applications,but efficient laser ablation of transparent materials is challenging due to low optical absorption.Considering the potential of femtosecond(fs)laser-induced air filament for high-peak laser transmission over long distances,femtosecond(fs)laser-induced air filaments are combined with a millisecond(ms)laser to form an fs-ms CPL,enhancing the efficiency of sapphire ablation through synchronized spatial-temporal focusing.Experimental results show that ablation efficiency increases with the ms peak power and duty ratio.Excessive thermal stress leads to fragmentation of the sapphire when the ms duty ratio is over 30%at the peak power of 800 W,or when the peak power is over 500 W at a duty ratio of 100%.Also,the mechanism of high-efficiency damage is revealed through in-situ high-speed imaging.According to it,the ablation process went through 4 stages within 1.5 ms:defect-creating,melting and ablation,spattering,and fragmentation.Finally,the equivalent ablation efficiency of the fs-ms CPL is as high as 1.73×10^(7)μm^(3)/J,about 28 times higher compared to the fs laser only.The CPL damage method explored in this paper can provide theoretical guidance for efficient laser damage of transparent materials.
基金supported by the Japan Society for the Promotion of Science(Grant Nos.JP 15F15772,JP 16H03911,JP 16K05506,JP 19H00669,and JP 25H00621)the Precursory Research for Embryonic Science and Technology(Grant No.JPMJPR16P9)+1 种基金the MEXT Project(Grant No.JPMXS0450300221)the Japan Science and Technology Agency(Grant No.PRESTOJPMJPR16P9).
文摘We present a systematic experimental investigation of temporal contrast enhancement techniques for petawatt(PW)-class Ti:sapphire lasers utilizing a double chirped-pulse amplification(CPA)architecture.Particular attention is given to pre-pulses induced by post-pulses originating in the first CPA stage.One conventional and two advanced pulse-cleaning strategies are quantitatively evaluated:(i)a saturable absorber(SA),(ii)a femtosecond optical parametric amplifier(OPA)employing the idler pulse in a two-stage configuration,and(iii)sum-frequency generation(SFG)combining the signal and idler pulses from the OPA.All techniques are implemented and evaluated using the J-KAREN-P laser system with an output energy of about 20 J.To the best of our knowledge,this is the first report to directly and systematically compare the contrast of pre-pulses originating from the first CPA stage under identical experimental conditions in a high-energy PW-class laser facility.The results offer crucial insights into contrast optimization for future high-field applications.
基金supported by the Science and Technology Plan Project of Tangshan Science and Technology Bureau(No.22130217H)the Natural Science Foundation-Steel and Iron Foundation of Hebei Province(No.E2022209114)the Open Research Fund from Guangxi Key Laboratory of Information Materials,Guilin University of Electronic Technology(No.221004-K).
文摘Two-dimensional(2D)MoO_(2),a binary nonlayered material,has been extensively studied for potential applications in catalysis and electronics.However,the preparation of 2D MoO_(2) remains challenging.Herein,we report the growth of 2D MoO_(2) flakes with rhombic morphology on the sapphire substrate via a chemical vapor deposition(CVD)method.Atomic force microscopy shows the CVDgrown MoO_(2) flakes with thin thickness.The CVD-obtained MoO_(2) with a stoichiometric ratio of 1:2 is verified using energy-dispersive X-ray spectroscopy.Scanning transmission electron microscopy(STEM)characterization reveals the high-quality,single-crystal nature of the CVDderived 2D MoO_(2) flakes.
基金National Defence Pre-research Foundation of China (41312040404)
文摘The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center （SAPMAC） method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.
文摘MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency （fT） of 77GHz are obtained for a 0.25μm gate-length single finger device. These power devices exhibit a maximum drain current density as high as 1.07A/mm. On-chip testing yielded a continuous-wave output power of 27. 04dBm at 8GHz with an associated power-added efficiency of 26. 5% for an 80 × 10μm device.
文摘A crystalline sapphire （Al2O3） boule （Ф10 × 80mm^3） grown by the temperature gradient technique （TGT） is a bit colored due to carbon volatilization from the graphite heater at high temperatures and the absorption of transitional metal inclusions in the raw material. The sapphire becomes colorless and transparent after decolorization and decarbonization in successive annealings in air and hydrogen at high temperatures. The quality, optical transmissivity,and homogeneity of the sapphire are remarkably improved.
文摘Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm common gate device.The second gate bias will not only remarkably affect saturated current and transconductance,but also realize power gain control.Cascode device exhibits a slight lower of f T,a less feedback,a largely greater of maximum available gain and a higher impedance compare to that of common source device.
文摘The Mamfe Basin has been the subject of many studies,but some debates persist,especially concerning the stratigraphic nomenclature,corundum origin,and marine transgression.The aims of this work are(1)to propose a new lithostratigraphic nomenclature of the Mamfe Basin formation based on new field observations,(2)to determine the source rock distribution and the origin of gem deposits and(3)to correlate the Cameroon section of the Mamfe Basin with the Nigerian deposits.The main results show that the name Manyu River Group is more appropriate as the Manyu River crosses all the facies in the Mamfe sedimentary Basin belonging to the Manyu Division.According to the facies analysis,the age of deposition,the mineralogic and geochemical data such as the V vs.Al2O3andΣREE vs.Al_(2)O_(3),TiO_(2)MgO,Na_(2)O,P_(2)O_(5),and CaO diagrams,this Group is composed of at least five Formations,including four Cretaceous Formations,from bottom to top:the Etoko Formation(alluvial and fluvial channel to fluvio-lacustrine deposits),the Nfaitok Formation(lagoonal deposits),the Bachuo Ntai Formation(fluvial braided channels or fluvio-deltaic environment)and the Eyumojock/NsanaragatiFormation(fluvio-lacustrine deposits)and the new Cenozoic Formation named Bakebe Formation(fluvio-lacustrine deposits).The gem minerals such as corundum,rutile,or tourmaline in the Cretaceous deposits of the Mamfe Basin are mainly detrital as indicated by the presence of worn shapes and fragments of these minerals.The presence of sapphire in the AlboCenomanian deposits indicates a Precambrian age of the felsic source rock,likely the plutonic rocks such as granite or pegmatite as indicated by the abundance of tourmaline and high LREE/HREE ratios(14.81–34.29)and slightly negative and positive Eu anomalies(0.85–1.15).This marine incursion in the Mamfe Basin was probably from West Nigeria,according to the geographic location of the Mamfe Basin and the general palaeogeographic evolution of the Benue Trough.
基金supported by the Major State Basic Research Development Program of China (Grant No. 61363)the National Natural Science Foundation of China (Grant Nos. 50772019 and 61021061)
文摘Heteroepitaxial GaN films are grown on sapphire （0001） substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional （3D） island mode to two-dimensional （2D） layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The ll0-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.
基金supported by Special Funds for Major Stale Basic Research Project G20000683863 Hi-tech Research Project,Distinguished Young Scientist Grant(60025411)+1 种基金National Nature Science Foundation of China(69976014,69636010,69806006,69987001)benefited from using the laser device of the Pulsed Laser Deposition laboratory in Nanjing University.
文摘Gallium Nitride film was successfully separated from sapphire substrate by laser radiation. The absorption of the 248 nm radiation by the GaN at the interface results in rapid thermal decomposition of interfacial layer, yielding metallic Ga and N2 gas. The substrate can be easily removed by heating above the Ga melting point (29°C). X-ray diffraction, atomic force microscopy and photoluminescence of GaN before and after lift-off process have been performed, which demonstrated that the separation and transfer process do not alter the structural quality of the GaN films. And further discussions on the threshold energy and crack-free strategies of laser lift-off process have also been presented.
基金National Natural Science Foundation of China (51575114 and 51805093)National Key R&D Program of China (2018YFB1107700)Guangzhou Science and Technology Project (201607010156).
文摘Transparent brittle materials such as glass and sapphire are widely concerned and applied in consumer electronics, optoelectronic devices, etc. due to their excellent physical and chemical stability and good transparency. Growing research attention has been paid to developing novel methods for high-precision and high-quality machining of transparent brittle materials in the past few decades. Among the various techniques, laser machining has been proved to be an effective and flexible way to process all kinds of transparent brittle materials. In this review, a series of laser machining methods, e.g. laser full cutting, laser scribing, laser stealth dicing, laser filament, laser induced backside dry etching (LIBDE), and laser induced backside wet etching (LIBWE) are summarized. Additionally, applications of these techniques in micromachining, drilling and cutting, and patterning are introduced in detail. Current challenges and future prospects in this field are also discussed.
文摘High rate （〉 50 μm/h） growth of homoepitaxial single-crystal diamond （SCD） is carried out by microwave plasma chemical vapour deposition （MPCVD） with added nitrogen in the reactant gases of methane and hydrogen, using a polyerystalline-CVD-diamond-film-made seed holder. Photolumineseenee results indicate that the nitrogen concentration is spatially inhomogeneous in a large scale, either on the top surface or in the bulk of those as-grown SCDs. The presence of N-distribution is attributed to the facts： （i） a difference in N-incorporation efficiency and （ii） N-diffusion, resulting from the local growth temperatures changed during the high-rate deposition process. In addition, the formed nitrogen-vacancy eentres play a crucial role in N-diffusion through the growing crystal. Based on the N-distribution observed in the as-grown crystals, we propose a simple method to distinguish natural diamonds and man-made CVD SCDs. Finally, the disappearance of void defect on the top surface of SCDs is discussed to be related to a filling-in mechanism.
基金supported by the National Key R&D Program of China(No.2018YFB0406502)the National Natural Science Foundation of China(Nos.61734001,61521004)
文摘Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).
