A wideband metamaterial absorber （MA） based on a magnetic resonator loaded with lumped resistors is presented. It is composed of a one-dimensional periodic array of double U-shaped structured magnetic resonators loa...A wideband metamaterial absorber （MA） based on a magnetic resonator loaded with lumped resistors is presented. It is composed of a one-dimensional periodic array of double U-shaped structured magnetic resonators loaded with lumped resistors, a dielectric substrate, and a metal plate. We simulated, fabricated, measured, and analyzed the MA. The experimental results show that the reflectance （S11） is below -10 dB at normal incidence in the frequency range of 7.7 GHz 18 GHz, and the peak value is about -20 dB. Simulated power loss density distributions indicate that wideband absorption of the MA is mainly attributable to the lumped resistors in the magnetic resonator. Further investigations indicate that the distance between two unit cells along the magnetic field direction significantly influences the performance of the MA.展开更多
In order to utilize integrated passive technology in printed circuit boards （PCBs）, manufacturing processing for integrated resistors by lamination method was investigated. Integrated resistors fabricated from Ohmeg...In order to utilize integrated passive technology in printed circuit boards （PCBs）, manufacturing processing for integrated resistors by lamination method was investigated. Integrated resistors fabricated from Ohmega technologies in the experiment were 1 408 pieces per panel with four different patterns A, B, C and D and four resistance values of 25, 50, 75 and 100 fL Six panel per batch and four batches were performed totally. The testing was done for 960 pieces of integrated resistors randomly selected with the same size. The value distribution ranges and the relative standard deviation （RSD） show that the scatter degree of the resistance decreases with the resistor size increasing and/or with the resistance increasing. Patterns D with resistance of 75 and 100% for four patterns have the resistance value variances less than 10%. Patterns C and D with resistance of 100 Ω have the manufacturing tolerance less than 10%. The process capabilities are from about 0.6 to 1.6 for the designed testing patterns, which shows that the integrated resistors fabricated have the potential to be used in multilayer PCBs in the future.展开更多
Current dependence and stability of the measured resistance value are very important for the accurate measurement of DC standard resistor. In this paper, the volt-ampere （V-I） measurement method has been applied ...Current dependence and stability of the measured resistance value are very important for the accurate measurement of DC standard resistor. In this paper, the volt-ampere （V-I） measurement method has been applied to study the current depend-ence of four different types of standard resistors. Diverse values are obtained through the investigation of their stability at dif-ferent currents. Therefore, the current dependence coefficient （CDC） can be determined for each one of the studied resistors. Research shows CDC depends on the applied current value, the measurement time and the resistor type, as clearly demonstra-ted in this research.展开更多
Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditio...Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.展开更多
This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels du...This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.展开更多
The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing...The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.展开更多
Two cubical 3D electric circuits with single and double capacitors and twelve ohmic resistors are considered. The resistors are the sides of the cube. The circuit is fed with a single internal emf. The charge on the c...Two cubical 3D electric circuits with single and double capacitors and twelve ohmic resistors are considered. The resistors are the sides of the cube. The circuit is fed with a single internal emf. The charge on the capacitor(s) and the current distributions of all twelve sides of the circuit(s) vs. time are evaluated. The analysis requires solving twelve differential-algebraic intertwined symbolic equations. This is accomplished by applying a Computer Algebra System (CAS), specifically Mathematica. The needed codes are included. For a set of values assigned to the elements, the numeric results are depicted.展开更多
High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than...High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...展开更多
Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resi...Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resistors were used for heat and humid(HH)experiments. The experimental results show that the corrosion of bandlike resistive films is selective and isotropic, and that the corrosion spots in resistive films all form along grooves and extend in the same direction. It is revealed that OH^- ions are generated due to the electrochemical reactions of resistive film in HH experiments, so a NaOH aqueous solution with pH about 10 was used to study the effects of absorbed water and OH^- ions on PF/EP polymer film. The results indicates that the color of some part on PF/EP polymer film changes due to corrosion, and that the corrosion part of the polymer film is easy to be peeled off. It can be inferred that OH^- ions generated in HH experiments may play a catalytic role in the chemical reactions between polymer film and the absorbed water, which accelerates the degradation of PF/EP protection film for a resistor.展开更多
In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand tempera...In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.展开更多
A DC grid based on half-bridge modular multilevel converters(HB-MMC)is a feasible means to realize the friendly grid connection of renewable energy.To solve problems such as the high cost and technical difficulty of D...A DC grid based on half-bridge modular multilevel converters(HB-MMC)is a feasible means to realize the friendly grid connection of renewable energy.To solve problems such as the high cost and technical difficulty of DC circuit breakers(DCCB),a coordinated control method for fault current suppression of DC grid connecting wind power is proposed.The key influencing factors of DC fault current are revealed by fault characteristics analysis,and an adaptive current-limiting control method for MMC is proposed,whose parameter selection principles are designed to ensure the safe operation of equipment while achieving effective suppression of fault current.In addition,a novel configuration method of dissipative resistors with the current-limiting function is proposed,which can solve the problem of surplus power in the DC grid and reduce the current stress of converter valves.Based on this,a coordination scheme of dissipative resistors,the adaptive current-limiting control method,and DCCBs are proposed to block fault current,effectively reducing the manufacturing difficulty and cost of DCCB.Finally,a four-terminal DC grid simulation model is built based on the RTLAB OP5600 real-time digital simulation platform,and the effectiveness and feasibility of the proposed methods are verified.展开更多
High-selectivity common-mode(CM)and differential-mode(DM)reflectionless balanced bandpass filters(BBPFs)are proposed in this article.By loading absorption networks at single/both ends of the basic ring resonator,input...High-selectivity common-mode(CM)and differential-mode(DM)reflectionless balanced bandpass filters(BBPFs)are proposed in this article.By loading absorption networks at single/both ends of the basic ring resonator,input-/two-port wideband CM and DM reflectionless performance,wideband filtering performance and all-stop CM suppression are obtained.The absorption network composed of K-sections of coupled-lines(CLs)terminated with grounded resistors can not only extend the filtering performance to high order,but also realize wideband absorption of CM noise and out-of-band DM signals.Absorptive stubs are loaded at ports to increase the design flexibility and enhance the absorption.As for the input-reflectionless type,multiple independently controlled transmission zeros(TZs)are obtained by the TZ control network to improves the selectivity and out-of-band rejection.A set of 2 GHz micro-strip BBPFs are designed and measured,which shows simultaneous CM and DM absorption performance.展开更多
In this paper,since the Avalanche Photo Diode(APD)for Light-to-Voltage LTV conversion uses a high voltage in the operating range unlike other Photo Diodes(PD),the quenching resistor must be connected in series to prev...In this paper,since the Avalanche Photo Diode(APD)for Light-to-Voltage LTV conversion uses a high voltage in the operating range unlike other Photo Diodes(PD),the quenching resistor must be connected in series to prevent overcurrent when using the Transimpedance Amplifier(TIA).In such a case,quenching resistance may affect the transfer function of the TIA circuit,resulting in serious stability.Therefore,in this paper,by analyzing the effect of APD quenching resistance on the voltage and current loop transfer function of TIA,we proposed a loop analysis and a method for determining the quenching resistance value to improve stability.A TIA circuit with quenching resistance was designed by the proposed method and its operational stability was verified through simulation and chip fabrication.展开更多
This paper reports that the nickel-silicone rubber composites with enhanced piezoresistivity were synthesized with much reduced nickel concentration. A large piezosensitivity of 0.716/kPa and a gauge factor of 600 hav...This paper reports that the nickel-silicone rubber composites with enhanced piezoresistivity were synthesized with much reduced nickel concentration. A large piezosensitivity of 0.716/kPa and a gauge factor of 600 have been obtained for a composite sample with filler-polymer ratio of 2.7：1 by weight. Measurements of resistance as a function of uniaxial force reveal that the piezoresistance arises predominantly from the internal heterogeneity of the material and the effect of geometrical changes of samples under pressure is negleetably small. The nonlinear current-voltage characteristic of the composite depends strongly on the filler content, the initial compression and the electrical current flowing in the sample. Ohmic behaviour has been observed only in the highly compressed samples. The breakdown strength decreases with increasing filler content of the composite. Both I - V and R - f characteristics indicates that the resistivity of the composites decreases with electrical field, suggesting that the composite may also be used to make voltage sensitive resistors for protecting circuits. All the experimental results favour a quantum tunnelling mechanism of conductivity. It finds that the concept ＇negative resistance＇, often used to describe the phenomena that current decreases with increasing voltage, is not appropriate and should be avoided.展开更多
Howland circuits have been widely used as powerful source for exciting tissue over a wide frequency range. When a Howland source is designed, the components are chosen so that the designed source has the desired chara...Howland circuits have been widely used as powerful source for exciting tissue over a wide frequency range. When a Howland source is designed, the components are chosen so that the designed source has the desired characteristics. However, the operational amplifier limitations and resistor tolerances cause undesired behaviors. This work proposes to take into account the influence of the random distribution of the resistors in the modified Howland circuit over the frequency range of 10 Hz to 10 MHz. Both output current and impedance of the circuit are deduced either considering or the operational amplifiers parameters. The probability density function due to small changes in the resistors of the circuit was calculated by using the analytical modeling. Results showed that both output current and impedance are very sensitive to the resistors variations. In order to get higher output impedances, high operational amplifier gains are required. The operational amplifier open-loop gain increases as increasing the sensitivity of the output impedance. The analysis done in this work can be used as a powerful co-adjuvant tool when projecting this type of circuit in Spice simulators. This might improve the implementations of practical current sources used in electrical bioimpedance.展开更多
A general review is presented of the development of infrared scene targetsimulators; special characters and advantages of scene simulators based on computer-MOSresistor array are discussed by comparing with scaled mod...A general review is presented of the development of infrared scene targetsimulators; special characters and advantages of scene simulators based on computer-MOSresistor array are discussed by comparing with scaled model simulators; the system principle, structure, key technologies, software and hardware implementation are described.展开更多
We consider a profound problem of two-point resistance in the resistor network with a null resistor edge and an arbitrary boundary,which has not been solved before because the Green＇s function technique and the Lapla...We consider a profound problem of two-point resistance in the resistor network with a null resistor edge and an arbitrary boundary,which has not been solved before because the Green＇s function technique and the Laplacian matrix approach are invalid in this case.Looking for the exact solutions of resistance is important but difficult in the case of the arbitrary boundary since the boundary is a wall or trap which affects the behavior of a finite network.In this paper,we give a general resistance formula that is composed of a single summation by using the recursion-transform method.Meanwhile,several interesting results are derived by the general formula.Further,the current distribution is given explicitly as a byproduct of the method.展开更多
IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir（EtCp）（COD） and titanium isopropoxide （TTIP）. The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μΩ·...IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir（EtCp）（COD） and titanium isopropoxide （TTIP）. The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μΩ·cm by the IrO2 intermixing ratio from 0.55 to 0.78 in the IrO2-TiO2 thin films. The low temperature coefficient of resistance（TCR） values can be obtained by adopting IrO2-TiO2 composite thin films. Moreover, the change in the resistivity of IrO2-TiO2 thin films was below 10% even after O2 annealing process at 600 ℃. The step stress test results show that IrO2-TiO2 films have better characteristics than conventional TaN08 heater resistor. Therefore, IrO2-TiO2 composite thin films can be used as a heater resistor material in thermal inkjet printhead.展开更多
The steady state and dynamic characteristics of pressure output of a hydraulic power unit are important to the hydraulic system behavior.Because of the compact structure,the B-half bridge resistance network is widely ...The steady state and dynamic characteristics of pressure output of a hydraulic power unit are important to the hydraulic system behavior.Because of the compact structure,the B-half bridge resistance network is widely used in the pilot controlled pressure relief valves.However the steady-state pressure error might be unacceptably big in those pressure control systems.A constant pressure power unit is typically assumed in analysis of steady state and dynamic behavior of hydraulic systems.The flow-pressure relationship seems to be much complex,in particular when big flow variation takes place.In this paper,the π bridge hydraulic resistance network pilot stage is designed in order to get better flow-pressure characteristics.Based on the similarity of electrical circuits,the main factors influencing flow-pressure characteristics are analyzed.Moreover,the optimum diameters of both constant hydraulic resistor and dynamic resistor are proposed.Flow-pressure characteristics are compared with different constant hydraulic resistors,dynamic resistor and spring stiffness by simulations and experiments.Results of simulations and experiments show that flow-pressure characteristics depend very little on the spring stiffness in whole flow range.Good controlled pressure characteristics can be achieved with suitable constant resistors.Overshoot can be reduced with the small diameter of the dynamic resistor.Flow-pressure characteristics of pressure relief valve can be improved with a π bridge pilot stage.The proposed pressure control method will provide some positive guidelines and be helpful to design a high performance hydraulic system with large flow.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51207060)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20090142110004)
文摘A wideband metamaterial absorber （MA） based on a magnetic resonator loaded with lumped resistors is presented. It is composed of a one-dimensional periodic array of double U-shaped structured magnetic resonators loaded with lumped resistors, a dielectric substrate, and a metal plate. We simulated, fabricated, measured, and analyzed the MA. The experimental results show that the reflectance （S11） is below -10 dB at normal incidence in the frequency range of 7.7 GHz 18 GHz, and the peak value is about -20 dB. Simulated power loss density distributions indicate that wideband absorption of the MA is mainly attributable to the lumped resistors in the magnetic resonator. Further investigations indicate that the distance between two unit cells along the magnetic field direction significantly influences the performance of the MA.
基金Project(041010) supported by Start-Up Foundation of Northwest University,ChinaProject(UIT/39) supported by University-Industry Collaboration Program from the Innovation and Technology Fund of Hong Kong,China
文摘In order to utilize integrated passive technology in printed circuit boards （PCBs）, manufacturing processing for integrated resistors by lamination method was investigated. Integrated resistors fabricated from Ohmega technologies in the experiment were 1 408 pieces per panel with four different patterns A, B, C and D and four resistance values of 25, 50, 75 and 100 fL Six panel per batch and four batches were performed totally. The testing was done for 960 pieces of integrated resistors randomly selected with the same size. The value distribution ranges and the relative standard deviation （RSD） show that the scatter degree of the resistance decreases with the resistor size increasing and/or with the resistance increasing. Patterns D with resistance of 75 and 100% for four patterns have the resistance value variances less than 10%. Patterns C and D with resistance of 100 Ω have the manufacturing tolerance less than 10%. The process capabilities are from about 0.6 to 1.6 for the designed testing patterns, which shows that the integrated resistors fabricated have the potential to be used in multilayer PCBs in the future.
文摘Current dependence and stability of the measured resistance value are very important for the accurate measurement of DC standard resistor. In this paper, the volt-ampere （V-I） measurement method has been applied to study the current depend-ence of four different types of standard resistors. Diverse values are obtained through the investigation of their stability at dif-ferent currents. Therefore, the current dependence coefficient （CDC） can be determined for each one of the studied resistors. Research shows CDC depends on the applied current value, the measurement time and the resistor type, as clearly demonstra-ted in this research.
文摘Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.
文摘This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.
文摘The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.
文摘Two cubical 3D electric circuits with single and double capacitors and twelve ohmic resistors are considered. The resistors are the sides of the cube. The circuit is fed with a single internal emf. The charge on the capacitor(s) and the current distributions of all twelve sides of the circuit(s) vs. time are evaluated. The analysis requires solving twelve differential-algebraic intertwined symbolic equations. This is accomplished by applying a Computer Algebra System (CAS), specifically Mathematica. The needed codes are included. For a set of values assigned to the elements, the numeric results are depicted.
基金Supported by Science and Technology Committee of Tianjin (No.06YFGPGX08400)Ministry of Science and Technology of China (No.2009GJF20022)Innovation Fund of Tianjin University
文摘High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...
基金Supported by the National Natural Science Foundation of China(No.61201038)
文摘Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resistors were used for heat and humid(HH)experiments. The experimental results show that the corrosion of bandlike resistive films is selective and isotropic, and that the corrosion spots in resistive films all form along grooves and extend in the same direction. It is revealed that OH^- ions are generated due to the electrochemical reactions of resistive film in HH experiments, so a NaOH aqueous solution with pH about 10 was used to study the effects of absorbed water and OH^- ions on PF/EP polymer film. The results indicates that the color of some part on PF/EP polymer film changes due to corrosion, and that the corrosion part of the polymer film is easy to be peeled off. It can be inferred that OH^- ions generated in HH experiments may play a catalytic role in the chemical reactions between polymer film and the absorbed water, which accelerates the degradation of PF/EP protection film for a resistor.
文摘In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.
基金supported in part by the National Natural Science Foundation of China under Grant 52207078in part by the Joint Funds of the National Natural Science Foundation of China under Grant U2066208.
文摘A DC grid based on half-bridge modular multilevel converters(HB-MMC)is a feasible means to realize the friendly grid connection of renewable energy.To solve problems such as the high cost and technical difficulty of DC circuit breakers(DCCB),a coordinated control method for fault current suppression of DC grid connecting wind power is proposed.The key influencing factors of DC fault current are revealed by fault characteristics analysis,and an adaptive current-limiting control method for MMC is proposed,whose parameter selection principles are designed to ensure the safe operation of equipment while achieving effective suppression of fault current.In addition,a novel configuration method of dissipative resistors with the current-limiting function is proposed,which can solve the problem of surplus power in the DC grid and reduce the current stress of converter valves.Based on this,a coordination scheme of dissipative resistors,the adaptive current-limiting control method,and DCCBs are proposed to block fault current,effectively reducing the manufacturing difficulty and cost of DCCB.Finally,a four-terminal DC grid simulation model is built based on the RTLAB OP5600 real-time digital simulation platform,and the effectiveness and feasibility of the proposed methods are verified.
文摘High-selectivity common-mode(CM)and differential-mode(DM)reflectionless balanced bandpass filters(BBPFs)are proposed in this article.By loading absorption networks at single/both ends of the basic ring resonator,input-/two-port wideband CM and DM reflectionless performance,wideband filtering performance and all-stop CM suppression are obtained.The absorption network composed of K-sections of coupled-lines(CLs)terminated with grounded resistors can not only extend the filtering performance to high order,but also realize wideband absorption of CM noise and out-of-band DM signals.Absorptive stubs are loaded at ports to increase the design flexibility and enhance the absorption.As for the input-reflectionless type,multiple independently controlled transmission zeros(TZs)are obtained by the TZ control network to improves the selectivity and out-of-band rejection.A set of 2 GHz micro-strip BBPFs are designed and measured,which shows simultaneous CM and DM absorption performance.
文摘In this paper,since the Avalanche Photo Diode(APD)for Light-to-Voltage LTV conversion uses a high voltage in the operating range unlike other Photo Diodes(PD),the quenching resistor must be connected in series to prevent overcurrent when using the Transimpedance Amplifier(TIA).In such a case,quenching resistance may affect the transfer function of the TIA circuit,resulting in serious stability.Therefore,in this paper,by analyzing the effect of APD quenching resistance on the voltage and current loop transfer function of TIA,we proposed a loop analysis and a method for determining the quenching resistance value to improve stability.A TIA circuit with quenching resistance was designed by the proposed method and its operational stability was verified through simulation and chip fabrication.
基金supported by National Natural Science Foundation of China (Grant No 60571063)partially sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry
文摘This paper reports that the nickel-silicone rubber composites with enhanced piezoresistivity were synthesized with much reduced nickel concentration. A large piezosensitivity of 0.716/kPa and a gauge factor of 600 have been obtained for a composite sample with filler-polymer ratio of 2.7：1 by weight. Measurements of resistance as a function of uniaxial force reveal that the piezoresistance arises predominantly from the internal heterogeneity of the material and the effect of geometrical changes of samples under pressure is negleetably small. The nonlinear current-voltage characteristic of the composite depends strongly on the filler content, the initial compression and the electrical current flowing in the sample. Ohmic behaviour has been observed only in the highly compressed samples. The breakdown strength decreases with increasing filler content of the composite. Both I - V and R - f characteristics indicates that the resistivity of the composites decreases with electrical field, suggesting that the composite may also be used to make voltage sensitive resistors for protecting circuits. All the experimental results favour a quantum tunnelling mechanism of conductivity. It finds that the concept ＇negative resistance＇, often used to describe the phenomena that current decreases with increasing voltage, is not appropriate and should be avoided.
文摘Howland circuits have been widely used as powerful source for exciting tissue over a wide frequency range. When a Howland source is designed, the components are chosen so that the designed source has the desired characteristics. However, the operational amplifier limitations and resistor tolerances cause undesired behaviors. This work proposes to take into account the influence of the random distribution of the resistors in the modified Howland circuit over the frequency range of 10 Hz to 10 MHz. Both output current and impedance of the circuit are deduced either considering or the operational amplifiers parameters. The probability density function due to small changes in the resistors of the circuit was calculated by using the analytical modeling. Results showed that both output current and impedance are very sensitive to the resistors variations. In order to get higher output impedances, high operational amplifier gains are required. The operational amplifier open-loop gain increases as increasing the sensitivity of the output impedance. The analysis done in this work can be used as a powerful co-adjuvant tool when projecting this type of circuit in Spice simulators. This might improve the implementations of practical current sources used in electrical bioimpedance.
文摘A general review is presented of the development of infrared scene targetsimulators; special characters and advantages of scene simulators based on computer-MOSresistor array are discussed by comparing with scaled model simulators; the system principle, structure, key technologies, software and hardware implementation are described.
文摘We consider a profound problem of two-point resistance in the resistor network with a null resistor edge and an arbitrary boundary,which has not been solved before because the Green＇s function technique and the Laplacian matrix approach are invalid in this case.Looking for the exact solutions of resistance is important but difficult in the case of the arbitrary boundary since the boundary is a wall or trap which affects the behavior of a finite network.In this paper,we give a general resistance formula that is composed of a single summation by using the recursion-transform method.Meanwhile,several interesting results are derived by the general formula.Further,the current distribution is given explicitly as a byproduct of the method.
基金supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Koreasupported by Basic Science Research program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0001-226)
文摘IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir（EtCp）（COD） and titanium isopropoxide （TTIP）. The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μΩ·cm by the IrO2 intermixing ratio from 0.55 to 0.78 in the IrO2-TiO2 thin films. The low temperature coefficient of resistance（TCR） values can be obtained by adopting IrO2-TiO2 composite thin films. Moreover, the change in the resistivity of IrO2-TiO2 thin films was below 10% even after O2 annealing process at 600 ℃. The step stress test results show that IrO2-TiO2 films have better characteristics than conventional TaN08 heater resistor. Therefore, IrO2-TiO2 composite thin films can be used as a heater resistor material in thermal inkjet printhead.
基金supported by National Natural Science Foundation of China (Grant No. 50975252)National Basic Research Program of China (973 Program,Grant No. 2007CB714004)
文摘The steady state and dynamic characteristics of pressure output of a hydraulic power unit are important to the hydraulic system behavior.Because of the compact structure,the B-half bridge resistance network is widely used in the pilot controlled pressure relief valves.However the steady-state pressure error might be unacceptably big in those pressure control systems.A constant pressure power unit is typically assumed in analysis of steady state and dynamic behavior of hydraulic systems.The flow-pressure relationship seems to be much complex,in particular when big flow variation takes place.In this paper,the π bridge hydraulic resistance network pilot stage is designed in order to get better flow-pressure characteristics.Based on the similarity of electrical circuits,the main factors influencing flow-pressure characteristics are analyzed.Moreover,the optimum diameters of both constant hydraulic resistor and dynamic resistor are proposed.Flow-pressure characteristics are compared with different constant hydraulic resistors,dynamic resistor and spring stiffness by simulations and experiments.Results of simulations and experiments show that flow-pressure characteristics depend very little on the spring stiffness in whole flow range.Good controlled pressure characteristics can be achieved with suitable constant resistors.Overshoot can be reduced with the small diameter of the dynamic resistor.Flow-pressure characteristics of pressure relief valve can be improved with a π bridge pilot stage.The proposed pressure control method will provide some positive guidelines and be helpful to design a high performance hydraulic system with large flow.
