Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of swit...Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.展开更多
All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various...All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.展开更多
Schottky contacts have attracted widespread attention from both the electronic device industry and researchers since their discovery.The Schottky characteristics make these contacts highly suitable for use in field-ef...Schottky contacts have attracted widespread attention from both the electronic device industry and researchers since their discovery.The Schottky characteristics make these contacts highly suitable for use in field-effect transistors(FETs),photodetectors(PDs),solar cells(SCs),resistive-switching memories(RSMs),thin-film transistors(TFTs),etc.However,how do Schottky contacts affect the device performance?The answer lies simply in the Schottky parameters.This review focuses on the extraction of Schottky parameters,i.e.,the Schottky barrier height(SBH),ideality factor(IF),and series resistance(SR),from the current-voltage(I−V)curve to understand and analyze the characteristics of Schottky devices.First,the current research progress in this field and the principles of Schottky contacts are presented.Second,this article delves into some classic and widely used extraction methods as well as the latest extraction methods,providing an objective evaluation based on their practical effectiveness.Then,several research applications,including studies that require extraction,simple extraction,and delicate extraction,are enumerated to demonstrate the necessity and importance of Schottky parameter analysis.Finally,an outlook and future research prospects are discussed based on recent progress,and a comprehensive summary is given.展开更多
In the post-Moore era,neuromorphic computing has been mainly focused on breaking the von Neumann bottlenecks.Memristors have been proposed as a key part of neuromorphic computing architectures,and can be used to emula...In the post-Moore era,neuromorphic computing has been mainly focused on breaking the von Neumann bottlenecks.Memristors have been proposed as a key part of neuromorphic computing architectures,and can be used to emulate the synaptic plasticities of the human brain.Ferroelectric memristors represent a breakthrough for memristive devices on account of their reliable nonvolatile storage,low write/read latency and tunable conductive states.However,among the reported ferroelectric memristors,the mechanisms of resistive switching are still under debate.In addition,there needs to be more research on emulation of the brain synapses using ferroelectric memristors.Herein,Cu/PbZr_(0.52)Ti_(0.48)O_(3)(PZT)/Pt ferroelectric memristors have been fabricated.The devices are able to realize the transformation from threshold switching behavior to resistive switching behavior.The synaptic plasticities,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression and spike time-dependent plasticity,have been mimicked by the PZT devices.Furthermore,the mechanisms of PZT devices have been investigated by first-principles calculations based on the interface barrier and conductive filament models.This work may contribute to the application of ferroelectric memristors in neuromorphic computing systems.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 51202196the National Aerospace Science Foundation of China under Grant No 2013ZF53067+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China under Grant No 2014JQ6204the Fundamental Research Funds for the Central Universities under Grant No 3102014JCQ01032the 111 Project under Grant No B08040
文摘Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.
基金supported by the National Natural Science Foundation of China(51572205,11674258 and 51802093)the Joint Fund of Ministry of Education for Equipment Pre-research the Fundamental Research(6141A02022262)+1 种基金the Excellent Dissertation Cultivation Funds of Wuhan University of Technology(2018-YS-001)the Fundamental Research Funds for the Central Universities(2019zy-007)。
文摘All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.
基金financially supported by Guangxi Science and Technology Plan Project(Nos.AD21220150,2023GXNSFBA026216,AD21220056,and 2023JJG170001)the National Natural Sci-ence Foundation of China(Nos.51802032,52262022,52061009,62174041,and 62361022)the Yunnan Province Major Science and Technology Projects(No.202102AB080008-2).
文摘Schottky contacts have attracted widespread attention from both the electronic device industry and researchers since their discovery.The Schottky characteristics make these contacts highly suitable for use in field-effect transistors(FETs),photodetectors(PDs),solar cells(SCs),resistive-switching memories(RSMs),thin-film transistors(TFTs),etc.However,how do Schottky contacts affect the device performance?The answer lies simply in the Schottky parameters.This review focuses on the extraction of Schottky parameters,i.e.,the Schottky barrier height(SBH),ideality factor(IF),and series resistance(SR),from the current-voltage(I−V)curve to understand and analyze the characteristics of Schottky devices.First,the current research progress in this field and the principles of Schottky contacts are presented.Second,this article delves into some classic and widely used extraction methods as well as the latest extraction methods,providing an objective evaluation based on their practical effectiveness.Then,several research applications,including studies that require extraction,simple extraction,and delicate extraction,are enumerated to demonstrate the necessity and importance of Schottky parameter analysis.Finally,an outlook and future research prospects are discussed based on recent progress,and a comprehensive summary is given.
基金Jiangsu Province Research Foundation(Grant Nos.BK20191202,RK106STP18003,and SZDG2018007)the Jiangsu Province Research Foundation(Grant Nos.BK20191202,RK106STP18003,and SZDG2018007)+1 种基金the Research Innovation Program for College Graduates of Jiangsu Province(Grant Nos.KYCX200806,KYCX190960,and SJCX190268)NJUPTSF(Grant Nos.NY217116,NY220078,and NY218107)。
文摘In the post-Moore era,neuromorphic computing has been mainly focused on breaking the von Neumann bottlenecks.Memristors have been proposed as a key part of neuromorphic computing architectures,and can be used to emulate the synaptic plasticities of the human brain.Ferroelectric memristors represent a breakthrough for memristive devices on account of their reliable nonvolatile storage,low write/read latency and tunable conductive states.However,among the reported ferroelectric memristors,the mechanisms of resistive switching are still under debate.In addition,there needs to be more research on emulation of the brain synapses using ferroelectric memristors.Herein,Cu/PbZr_(0.52)Ti_(0.48)O_(3)(PZT)/Pt ferroelectric memristors have been fabricated.The devices are able to realize the transformation from threshold switching behavior to resistive switching behavior.The synaptic plasticities,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression and spike time-dependent plasticity,have been mimicked by the PZT devices.Furthermore,the mechanisms of PZT devices have been investigated by first-principles calculations based on the interface barrier and conductive filament models.This work may contribute to the application of ferroelectric memristors in neuromorphic computing systems.
