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CLIL理论下英语新教材Reading time板块教学实施路径
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作者 沈凌云 《课程教材教学研究(上半月)》 2025年第8期48-52,共5页
Reading time板块是人教版PEP英语新教材新增部分,CLIL(Content and Language Integrated Learning)理论主张“内容+语言”整合式教学。结合教学实例探讨CLIL理论框架在此板块的应用路径,尝试将语言学习和内容实践有机整合为一体,推动... Reading time板块是人教版PEP英语新教材新增部分,CLIL(Content and Language Integrated Learning)理论主张“内容+语言”整合式教学。结合教学实例探讨CLIL理论框架在此板块的应用路径,尝试将语言学习和内容实践有机整合为一体,推动语言教育从“学英语”向“用英语学”的转型,为英语教学提供Reading time板块的实际教学案例和启示。 展开更多
关键词 CLIL理论 英语新教材 reading time板块
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Time to Read
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作者 Nuru Ali 《ChinAfrica》 2017年第1期36-37,共2页
IN his book I Speak of Ghana, Nana Awere Damoah enumerates 50 things that will indicate you are in Ghana. While all of them are droll they do also contain a small kernel of hard truth. For instance. "You know you ar... IN his book I Speak of Ghana, Nana Awere Damoah enumerates 50 things that will indicate you are in Ghana. While all of them are droll they do also contain a small kernel of hard truth. For instance. "You know you are in Ghana when street lights are visible decorations by day and invisible shadows by night. You know you are in Ghana when a 60-year-old man is introduced as the Chairman of the Asikuma Youth Association. 展开更多
关键词 time to Read
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Leakage Analysis of a Low Power 10 Transistor SRAM Cell in 90 nm Technology
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作者 Parimaladevi Muthusamy Sharmila Dhandapani 《Circuits and Systems》 2016年第6期1033-1041,共9页
In this paper, a novel 10 Transistor Static Random Access Memory (SRAM) cell is proposed. Read and Write bit lines are decoupled in the proposed cell. Feedback loop-cutting with single bit line write scheme is employe... In this paper, a novel 10 Transistor Static Random Access Memory (SRAM) cell is proposed. Read and Write bit lines are decoupled in the proposed cell. Feedback loop-cutting with single bit line write scheme is employed in the 10 Transistor SRAM cell to reduce active power consumption during the write operation. Read access time and write access time are measured for proposed cell architecture based on Eldo SPICE simulation using TSMC based 90 nm Complementary Metal Oxide Semiconductor (CMOS) technology at various process corners. Leakage current measurements made on hold mode of operation show that proposed cell architecture is having 12.31 nano amperes as compared to 40.63 nano amperes of the standard 6 Transistor cell. 10 Transistor cell also has better performance in terms of leakage power as compared to 6 Transistor cell. 展开更多
关键词 SRAM Transmission Gate Subthreshold Leakage Gate Leakage Read Access time Write Access time
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It's World Book Day
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《小学生时代(大嘴英语)》 2025年第4期4-10,共7页
The World Book Day is on April 23rd.It’s a special day for all book lovers!Are you a bookworm?How much time do you read every day?Hey there!I’m Tafadzwa.That’s me in the photo-reading a book in the school library w... The World Book Day is on April 23rd.It’s a special day for all book lovers!Are you a bookworm?How much time do you read every day?Hey there!I’m Tafadzwa.That’s me in the photo-reading a book in the school library with my classmates.I’m in Year 5,but let5s be honest-pictures are still way more fun than words!Do you think so? 展开更多
关键词 World Book Day reading time
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