Van der Waals （vdW） heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four het...Van der Waals （vdW） heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor （FET） compared with the individual components, and a high current responsivity （Rλ） and external quantum efficiency （EQE） of 6.75 A/W and 1,266%, respectively, for the photodetector.展开更多
The anisotropic two-dimensional （2D） layered material rhenium disulfide （ReSe2） has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic de...The anisotropic two-dimensional （2D） layered material rhenium disulfide （ReSe2） has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, because of its low lattice symmetry and interlayer decoupling, anisotropic growth and out-of-plane growth occur easily, yielding thick flakes, dendritic structure, or flower-like structure. In this stud34 we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy. To achieve controllable growth, a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system. Within the confined reaction space, the nucleation density and growth rate of ReSe2 were significantly reduced, favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness. The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature （〈600 ℃）. Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 10s and a hole carrier mobility of 0.98 cm^2/（V·s）. Furthermore, the ReSe2 device exhibited an outstanding photoresponse to near-infrared light, with responsivity up to 8.4 and 5.1 A/W for 850- and 940-nm light, respectively. This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.展开更多
Owing to its anisotropic optical and electrical properties,rhenium diselenide(ReSe2)has garnered considerable attention recently as a candidate material for polarization-sensitive photodetectors.However,the direct and...Owing to its anisotropic optical and electrical properties,rhenium diselenide(ReSe2)has garnered considerable attention recently as a candidate material for polarization-sensitive photodetectors.However,the direct and controllable synthesis of large-sized ReSe2 with a uniform thickness is still a great challenge.Herein,we have refined the synthesis method to obtain uniform monolayer ReSe2 flakes with a size of up to^106μm on sapphire via an ambient-pressure chemical vapor deposition technique using Na promoter from sodium chloride.Interestingly,optical pump-probe spectroscopy revealed a fast switching from saturable absorption(SA)to absorption enhancement(AE)in subpicosecond time scale,followed by a slower decay induced by exciton recombination.Furthermore,both AE and SA signals exhibited clear angular dependence with a periodicity of 180°,which reflected the dichroism in nonlinear absorption dynamics.In addition,the photocarrier dynamics including free-carrier transport and subpicosecond relaxation due to exciton formation or surface trapping was probed using time resolved terahertz spectroscopy.We believe that our study serves as a reference for atomically controlled synthesis of large-sized ReSe2 and provides useful insights on its optoelectronic properties for novel device applications.展开更多
基金This work was supported by the ＂Hundred Talents Program＂ of Chinese Academy of Sciences （CAS）,the National Natural Science Foundation of China （No. 91233120）, and the CAS/SAFEA International Partnership Program for Creative Research Teams.
文摘Van der Waals （vdW） heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor （FET） compared with the individual components, and a high current responsivity （Rλ） and external quantum efficiency （EQE） of 6.75 A/W and 1,266%, respectively, for the photodetector.
基金The authors acknowledge the insightful suggestions and comments from Dr. S. C. Zhang and N. N. Mao at Peking University. This work was supported by the National Natural Science Foundation of China （Nos. 51502167 and 21473110）, and the fundamental Research Funds for the Central Universities （No. GK201502003）, L. Z. and J. K. acknowledge the funding by the Center for Integrated Quantum Materials under NSF （No. DMR-1231319）.
文摘The anisotropic two-dimensional （2D） layered material rhenium disulfide （ReSe2） has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, because of its low lattice symmetry and interlayer decoupling, anisotropic growth and out-of-plane growth occur easily, yielding thick flakes, dendritic structure, or flower-like structure. In this stud34 we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy. To achieve controllable growth, a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system. Within the confined reaction space, the nucleation density and growth rate of ReSe2 were significantly reduced, favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness. The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature （〈600 ℃）. Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 10s and a hole carrier mobility of 0.98 cm^2/（V·s）. Furthermore, the ReSe2 device exhibited an outstanding photoresponse to near-infrared light, with responsivity up to 8.4 and 5.1 A/W for 850- and 940-nm light, respectively. This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.
基金The work was supported by the National Key Research and Development Program of China(Nos.2018YFA0703700,2017YFA0304600,and 2017YFA0205700)the National Natural Science Foundation of China(Nos.51861135201,21473001,11774354,11674329,and 51727806)+4 种基金Beijing Natural Science Foundation(No.2192021)the Project funded by China Postdoctoral Science Foundation(No.2018M640023)Chinese Academy of Science(No.YZJJ201705)Open Research Fund Program of the State Key Laboratory of Low-dimensional Quantum Physics(No.KF201907)Start-up Funding of Peking University.
文摘Owing to its anisotropic optical and electrical properties,rhenium diselenide(ReSe2)has garnered considerable attention recently as a candidate material for polarization-sensitive photodetectors.However,the direct and controllable synthesis of large-sized ReSe2 with a uniform thickness is still a great challenge.Herein,we have refined the synthesis method to obtain uniform monolayer ReSe2 flakes with a size of up to^106μm on sapphire via an ambient-pressure chemical vapor deposition technique using Na promoter from sodium chloride.Interestingly,optical pump-probe spectroscopy revealed a fast switching from saturable absorption(SA)to absorption enhancement(AE)in subpicosecond time scale,followed by a slower decay induced by exciton recombination.Furthermore,both AE and SA signals exhibited clear angular dependence with a periodicity of 180°,which reflected the dichroism in nonlinear absorption dynamics.In addition,the photocarrier dynamics including free-carrier transport and subpicosecond relaxation due to exciton formation or surface trapping was probed using time resolved terahertz spectroscopy.We believe that our study serves as a reference for atomically controlled synthesis of large-sized ReSe2 and provides useful insights on its optoelectronic properties for novel device applications.
