Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circ...Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.展开更多
目的探讨电容电阻式靶向疗法(Transcutaneous Capacitive and Resistive Electric Transfer,TECAR)联合β-羟基β-甲基丁酸盐(β-hydroxy-β-methylbuty rate,HMB)营养补充对老年肌少性肥胖(sarcopenic obesity,SO)患者的综合干预效果...目的探讨电容电阻式靶向疗法(Transcutaneous Capacitive and Resistive Electric Transfer,TECAR)联合β-羟基β-甲基丁酸盐(β-hydroxy-β-methylbuty rate,HMB)营养补充对老年肌少性肥胖(sarcopenic obesity,SO)患者的综合干预效果。方法采用随机对照试验设计,纳入140例符合亚洲肌少性肥胖诊断标准的老年患者,随机分为四组:A组(双安慰组)、B组(TECAR+安慰剂)、C组(假TECAR+HMB)、D组(TECAR+HMB),每组35例。干预周期为12周,主要结局指标为简易体能状况量表(SPPB)总分,次要指标包括改良的Barthel指数(modified Barthel index,MBI)、微型营养评估简表(MNA-SF)评分、握力、体质量及体质量指数(BMI)。采用双因素方差分析评估TECAR与HMB的交互效应。结果干预后,D组(TECAR+HMB)各项指标较干预前差异均有统计学意义:SPPB总分从(6.29±1.34)分提高至(8.06±1.51)分(P<0.001),其中步行速度[(271±086)分vs.(1.97±0.82)分]、椅子站立测试[(2.60±0.55)分vs.(2.11±0.47)分]和平衡能力[(2.74±0.74)分vs.(2.20±0.76)分]三个子项均有明显提高;MBI从(71.74±14.41)提高至(79.91±10.52)P<0.001;握力从(13.65±5.05)kg提升至(15.72±4.89)kg(P=0.001);体质量从(81.78±9.02)kg下降至(76.95±9.89)kg(P<0.001),BMI从(30.14±1.68)kg/m^(2)下降至(28.34±2.33)kg/m^(2)(P<0.001)。交互效应分析显示,TECAR和HMB在改善SPPB总分(F=16.374,P<0.001,η^(2)=0.107)、降低BMI(F=14.328,P<0.001,η^(2)=0.095)等方面具有显著协同作用。结论TECAR联合HMB能显著改善老年肌少性肥胖患者的躯体功能、生活能力和BMI,且两者具有协同增效作用。展开更多
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. ...Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.展开更多
基金supported in part by the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)under Grant 2020118Beijing Nova Program under Grant 20230484358Beijing Superstring Academy of Memory Technology:under Grant No.E2DF06X003。
文摘Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.
文摘目的探讨电容电阻式靶向疗法(Transcutaneous Capacitive and Resistive Electric Transfer,TECAR)联合β-羟基β-甲基丁酸盐(β-hydroxy-β-methylbuty rate,HMB)营养补充对老年肌少性肥胖(sarcopenic obesity,SO)患者的综合干预效果。方法采用随机对照试验设计,纳入140例符合亚洲肌少性肥胖诊断标准的老年患者,随机分为四组:A组(双安慰组)、B组(TECAR+安慰剂)、C组(假TECAR+HMB)、D组(TECAR+HMB),每组35例。干预周期为12周,主要结局指标为简易体能状况量表(SPPB)总分,次要指标包括改良的Barthel指数(modified Barthel index,MBI)、微型营养评估简表(MNA-SF)评分、握力、体质量及体质量指数(BMI)。采用双因素方差分析评估TECAR与HMB的交互效应。结果干预后,D组(TECAR+HMB)各项指标较干预前差异均有统计学意义:SPPB总分从(6.29±1.34)分提高至(8.06±1.51)分(P<0.001),其中步行速度[(271±086)分vs.(1.97±0.82)分]、椅子站立测试[(2.60±0.55)分vs.(2.11±0.47)分]和平衡能力[(2.74±0.74)分vs.(2.20±0.76)分]三个子项均有明显提高;MBI从(71.74±14.41)提高至(79.91±10.52)P<0.001;握力从(13.65±5.05)kg提升至(15.72±4.89)kg(P=0.001);体质量从(81.78±9.02)kg下降至(76.95±9.89)kg(P<0.001),BMI从(30.14±1.68)kg/m^(2)下降至(28.34±2.33)kg/m^(2)(P<0.001)。交互效应分析显示,TECAR和HMB在改善SPPB总分(F=16.374,P<0.001,η^(2)=0.107)、降低BMI(F=14.328,P<0.001,η^(2)=0.095)等方面具有显著协同作用。结论TECAR联合HMB能显著改善老年肌少性肥胖患者的躯体功能、生活能力和BMI,且两者具有协同增效作用。
基金supported by the State Key Project of Fundamental Research of Ministry of Science and Technology,China(Grant No.2010CB934400)the National Natural Science Foundation of China(Grant Nos.51229101 and 11374351)
文摘Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
