A fast RLGC circuit model with analytical expression is proposed for the dual tapered through-silicon via （TSV） structure in three-dimensional integrated circuits under different slope angles at the wide frequency r...A fast RLGC circuit model with analytical expression is proposed for the dual tapered through-silicon via （TSV） structure in three-dimensional integrated circuits under different slope angles at the wide frequency region. By describing the electrical characteristics of the dual tapered TSV structure, the RLGC parameters are extracted based on the numerical integration method. The RLGC model includes metal resistance, metal inductance, substrate resistance, outer inductance with skin effect and eddy effect taken into account. The proposed analytical model is verified to be nearly as accurate as the Q3D extractor but more efficient.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61234001)the Shanghai Science and Technology Committee(No.13511500900)the Specialized Research Fund for the Doctoral Program of Higher Education(No.20120073130003)
文摘A fast RLGC circuit model with analytical expression is proposed for the dual tapered through-silicon via （TSV） structure in three-dimensional integrated circuits under different slope angles at the wide frequency region. By describing the electrical characteristics of the dual tapered TSV structure, the RLGC parameters are extracted based on the numerical integration method. The RLGC model includes metal resistance, metal inductance, substrate resistance, outer inductance with skin effect and eddy effect taken into account. The proposed analytical model is verified to be nearly as accurate as the Q3D extractor but more efficient.
