A quadrature mixer with a shared transconductor stage is analyzed,including voltage conversion gain, linearity, noise figure, and image rejection. The analysis indicates it has better performance than a conventional G...A quadrature mixer with a shared transconductor stage is analyzed,including voltage conversion gain, linearity, noise figure, and image rejection. The analysis indicates it has better performance than a conventional Gilbert mixer pair in commutating mode. A quadrature down-conversion mixer based on this topology is designed and optimized for an ultra high frequency RFID reader. Operating in the 915MHz ISM band, the presented quadrature mixer measures a conversion gain of 12.5dB,an IIP3 of 10dBm, an IIP2 of 58dBm, and an SSB noise figure of 17.6riB. The chip was fabricated in a 0. 18μm 1P6M RF CMOS process and consumes only 3mA of current from a 1.8V power supply.展开更多
A low-sidelobe circularly-polarized(CP) microstrip patch array for 2.4 GHz radio frequency identification(RFID) readers is presented.The antenna array with a Chebyshev current distribution is composed of 6 microstrip ...A low-sidelobe circularly-polarized(CP) microstrip patch array for 2.4 GHz radio frequency identification(RFID) readers is presented.The antenna array with a Chebyshev current distribution is composed of 6 microstrip elements.The CP operation is obtained by the quasi-square patch with difference in lengths of the two sides.The antenna has been investigated numerically and experimentally.Measured results show that the array has a Chebyshev pattern with the sidelobe level of-23 dB, the half-power beamwidth of 16° and an impedance bandwidth(S11≤-10 dB) of 130 MHz, which is suitable for RFID reader applications.展开更多
A single-chip UHF RFID reader transceiver IC has been implemented in 0.18 μm SiGe BiCMOS technology. The chip includes all transceiver blocks as RX/TX RF front-end, RX/TX analog baseband, frequency synthesizer and I2...A single-chip UHF RFID reader transceiver IC has been implemented in 0.18 μm SiGe BiCMOS technology. The chip includes all transceiver blocks as RX/TX RF front-end, RX/TX analog baseband, frequency synthesizer and I2C with fully-compliant China 800/900 MHz RFID draft, ISO/IEC 18000-6C protocol and ETSI 302 208-1 local regulation. The normal mode receiver in the presence of -3 dBm self-jammer achieves -75 dBm 1% PER sensitivity. The linear class-A PA integrated in transmitter has 25 dBm OP1 dB output power for CW. The fully-integrated fractional-N fre-quency synthesizer is designed based on MASH 1-1-1 sigma-delta modulator and 1.8 GHz fundamental frequency LC-VCO for lower in-band and out-of-band phase noise. The measured phase noise is up to -106 dBc/Hz@200 kHz and -131 dBc/Hz@1 MHz offset from center frequency and the integrated RMS jitter from 10 kHz to 10 MHz is less than 1.6 pS. The chip dissipates 330 mA from 3.3 V power supply when transmitting 22.4 dBm CW signal and the PAE of linear PA is up to 26%. The chip die area is 16.8 mm2.展开更多
To implement a fully-integrated on-chip CMOS power amplifier（PA） for RFID readers,the resonant frequency of each matching network is derived in detail.The highlight of the design is the adoption of a bonding wire as...To implement a fully-integrated on-chip CMOS power amplifier（PA） for RFID readers,the resonant frequency of each matching network is derived in detail.The highlight of the design is the adoption of a bonding wire as the output-stage inductor.Compared with the on-chip inductors in a CMOS process,the merit of the bondwire inductor is its high quality factor,leading to a higher output power and efficiency.The disadvantage of the bondwire inductor is that it is hard to control.A highly integrated class-E PA is implemented with 0.18-μm CMOS process.It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm.The maximum power-added efficiency（PAE） is 32.1%.Also,the spectral performance of the PA is analyzed for the specified RFID protocol.展开更多
A two-stage differential linear power amplifier （PA） fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and ...A two-stage differential linear power amplifier （PA） fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency （PAE） is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 × 0.55 mm2. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader.展开更多
A low cost fully integrated single-chip UHF radio frequency identification（RFID） reader SoC for short distance handheld applications is presented.The SoC integrates all building blocks—including an RF transceiver,a...A low cost fully integrated single-chip UHF radio frequency identification（RFID） reader SoC for short distance handheld applications is presented.The SoC integrates all building blocks—including an RF transceiver,a PLL frequency synthesizer,a digital baseband and an MCU—in a 0.18μm CMOS process.A high-linearity RX frontend is designed to handle the large self-interferer.A class-E power amplifier with high power efficiency is also integrated to fulfill the function of a UHF passive RFID reader.The measured maximum output power of the transmitter is 20.28 dBm and the measured receiver sensitivity is-60 dBm.The digital baseband including MCU core consumes 3.91 mW with a clock of 10 MHz and the analog part including power amplifier consumes 368.4 mW.The chip has a die area of 5.1×3.8 mm^2 including pads.展开更多
A low cost integrated transceiver for mobile UHF passive RFID reader applications is implemented in a 0.18μm CMOS process. The transceiver contains an OOK modulator and a power amplifier in the transmitter chain, an ...A low cost integrated transceiver for mobile UHF passive RFID reader applications is implemented in a 0.18μm CMOS process. The transceiver contains an OOK modulator and a power amplifier in the transmitter chain, an IQ direct-down converter, variable-gain amplifiers, channel-select filters and a 10-bit ADC in the receiver chain. The measured output PldB power of the transmitter is 17.6 dBm and the measured receiver sensitivity is -70 dBm. The on-chip integer N synthesizer achieves a frequency resolution of 200 kHz with a phase noise of -104 dBc/Hz at 100 kHz frequency offset and -120.83 dBc/Hz at 1 MHz frequency offset. The transmitter, the receiver and the frequency synthesizer consume 201.34, 25.3 and 54 mW, respectively. The chip has a die area of 4 × 2.5 mm^2 including pads.展开更多
文摘A quadrature mixer with a shared transconductor stage is analyzed,including voltage conversion gain, linearity, noise figure, and image rejection. The analysis indicates it has better performance than a conventional Gilbert mixer pair in commutating mode. A quadrature down-conversion mixer based on this topology is designed and optimized for an ultra high frequency RFID reader. Operating in the 915MHz ISM band, the presented quadrature mixer measures a conversion gain of 12.5dB,an IIP3 of 10dBm, an IIP2 of 58dBm, and an SSB noise figure of 17.6riB. The chip was fabricated in a 0. 18μm 1P6M RF CMOS process and consumes only 3mA of current from a 1.8V power supply.
基金supported by the Shanghai Leading Academic Discipline Project (Grant No.T0102)
文摘A low-sidelobe circularly-polarized(CP) microstrip patch array for 2.4 GHz radio frequency identification(RFID) readers is presented.The antenna array with a Chebyshev current distribution is composed of 6 microstrip elements.The CP operation is obtained by the quasi-square patch with difference in lengths of the two sides.The antenna has been investigated numerically and experimentally.Measured results show that the array has a Chebyshev pattern with the sidelobe level of-23 dB, the half-power beamwidth of 16° and an impedance bandwidth(S11≤-10 dB) of 130 MHz, which is suitable for RFID reader applications.
文摘A single-chip UHF RFID reader transceiver IC has been implemented in 0.18 μm SiGe BiCMOS technology. The chip includes all transceiver blocks as RX/TX RF front-end, RX/TX analog baseband, frequency synthesizer and I2C with fully-compliant China 800/900 MHz RFID draft, ISO/IEC 18000-6C protocol and ETSI 302 208-1 local regulation. The normal mode receiver in the presence of -3 dBm self-jammer achieves -75 dBm 1% PER sensitivity. The linear class-A PA integrated in transmitter has 25 dBm OP1 dB output power for CW. The fully-integrated fractional-N fre-quency synthesizer is designed based on MASH 1-1-1 sigma-delta modulator and 1.8 GHz fundamental frequency LC-VCO for lower in-band and out-of-band phase noise. The measured phase noise is up to -106 dBc/Hz@200 kHz and -131 dBc/Hz@1 MHz offset from center frequency and the integrated RMS jitter from 10 kHz to 10 MHz is less than 1.6 pS. The chip dissipates 330 mA from 3.3 V power supply when transmitting 22.4 dBm CW signal and the PAE of linear PA is up to 26%. The chip die area is 16.8 mm2.
文摘To implement a fully-integrated on-chip CMOS power amplifier（PA） for RFID readers,the resonant frequency of each matching network is derived in detail.The highlight of the design is the adoption of a bonding wire as the output-stage inductor.Compared with the on-chip inductors in a CMOS process,the merit of the bondwire inductor is its high quality factor,leading to a higher output power and efficiency.The disadvantage of the bondwire inductor is that it is hard to control.A highly integrated class-E PA is implemented with 0.18-μm CMOS process.It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm.The maximum power-added efficiency（PAE） is 32.1%.Also,the spectral performance of the PA is analyzed for the specified RFID protocol.
基金Project supported by the Ministry of Science & Technology of China(No.2008BAI55B07)
文摘A two-stage differential linear power amplifier （PA） fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency （PAE） is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 × 0.55 mm2. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader.
基金Project supported by the National High Technology Research and Development Program of China(No.2008AA04A102).
文摘A low cost fully integrated single-chip UHF radio frequency identification（RFID） reader SoC for short distance handheld applications is presented.The SoC integrates all building blocks—including an RF transceiver,a PLL frequency synthesizer,a digital baseband and an MCU—in a 0.18μm CMOS process.A high-linearity RX frontend is designed to handle the large self-interferer.A class-E power amplifier with high power efficiency is also integrated to fulfill the function of a UHF passive RFID reader.The measured maximum output power of the transmitter is 20.28 dBm and the measured receiver sensitivity is-60 dBm.The digital baseband including MCU core consumes 3.91 mW with a clock of 10 MHz and the analog part including power amplifier consumes 368.4 mW.The chip has a die area of 5.1×3.8 mm^2 including pads.
基金Project supported by the National High Technology Research and Development Program of China (Nos.2006AA04A109,2008AA010708)
文摘A low cost integrated transceiver for mobile UHF passive RFID reader applications is implemented in a 0.18μm CMOS process. The transceiver contains an OOK modulator and a power amplifier in the transmitter chain, an IQ direct-down converter, variable-gain amplifiers, channel-select filters and a 10-bit ADC in the receiver chain. The measured output PldB power of the transmitter is 17.6 dBm and the measured receiver sensitivity is -70 dBm. The on-chip integer N synthesizer achieves a frequency resolution of 200 kHz with a phase noise of -104 dBc/Hz at 100 kHz frequency offset and -120.83 dBc/Hz at 1 MHz frequency offset. The transmitter, the receiver and the frequency synthesizer consume 201.34, 25.3 and 54 mW, respectively. The chip has a die area of 4 × 2.5 mm^2 including pads.
