传统桥式全波RF-DC变换电路在设计过程中忽略了二极管导通损耗,从而影响系统效率。采用了E类零电压开关(Zero Voltage Switching,ZVS)RF-DC变换电路,设计了谐振频率为8 MHz,输入功率为1.21 W的无线电力传输系统接收模块。并利用multisi...传统桥式全波RF-DC变换电路在设计过程中忽略了二极管导通损耗,从而影响系统效率。采用了E类零电压开关(Zero Voltage Switching,ZVS)RF-DC变换电路,设计了谐振频率为8 MHz,输入功率为1.21 W的无线电力传输系统接收模块。并利用multisim软件进行了仿真。结果表明,该设计方法降低了二极管导通损耗,有效避免了传统桥式全波RF-DC变换电路存在的缺陷,效率可达92%。展开更多
Nowadays, we are witnessing an era marked by the autonomy of wireless devices and sensor networks without the aid of batteries. RF energy harvesting therefore becomes a promising alternative for battery dependence. Th...Nowadays, we are witnessing an era marked by the autonomy of wireless devices and sensor networks without the aid of batteries. RF energy harvesting therefore becomes a promising alternative for battery dependence. This work presents the design of an RF energy harvesting system consisting mainly of a rectenna (antenna and rectification circuit) and an adaptation circuit. First of all, we designed two dipole type antennas. One operates in the GSM 900 MHz band and the other in the GSM 1800 MHz band. The performances of the proposed antennas are provided by the ANSYS HFSS software. Secondly, we proposed two rectification circuits in order to obtain conversion efficiencies at 0 dBm of 64% for the system operating at the frequency of 900 MHz and 37% for the system at the frequency of 1800 MHz RF-DC. The rectifiers used are based on Schottky diodes. For maximum transfer of power between the antenna and the rectification circuit, L-type matching circuits have been proposed. This rectifier offers DC voltage values of 806 mV for the circuit at the frequency of 900 MHz and 616 mV for the circuit at the frequency of 1800 MHz. The adaptation circuits are obtained by carrying out simulations on the ADS (Advanced Design System) software.展开更多
In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.展开更多
文摘传统桥式全波RF-DC变换电路在设计过程中忽略了二极管导通损耗,从而影响系统效率。采用了E类零电压开关(Zero Voltage Switching,ZVS)RF-DC变换电路,设计了谐振频率为8 MHz,输入功率为1.21 W的无线电力传输系统接收模块。并利用multisim软件进行了仿真。结果表明,该设计方法降低了二极管导通损耗,有效避免了传统桥式全波RF-DC变换电路存在的缺陷,效率可达92%。
文摘Nowadays, we are witnessing an era marked by the autonomy of wireless devices and sensor networks without the aid of batteries. RF energy harvesting therefore becomes a promising alternative for battery dependence. This work presents the design of an RF energy harvesting system consisting mainly of a rectenna (antenna and rectification circuit) and an adaptation circuit. First of all, we designed two dipole type antennas. One operates in the GSM 900 MHz band and the other in the GSM 1800 MHz band. The performances of the proposed antennas are provided by the ANSYS HFSS software. Secondly, we proposed two rectification circuits in order to obtain conversion efficiencies at 0 dBm of 64% for the system operating at the frequency of 900 MHz and 37% for the system at the frequency of 1800 MHz RF-DC. The rectifiers used are based on Schottky diodes. For maximum transfer of power between the antenna and the rectification circuit, L-type matching circuits have been proposed. This rectifier offers DC voltage values of 806 mV for the circuit at the frequency of 900 MHz and 616 mV for the circuit at the frequency of 1800 MHz. The adaptation circuits are obtained by carrying out simulations on the ADS (Advanced Design System) software.
基金Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
文摘In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.
