提出了一种新的RF-CMOS晶体管在片测试结构寄生模型,模型综合考虑了射频/微波条件下RF-MOST器件在片测试结构中的各种寄生效应.模型考虑了PAD-互连金属、互连金属-DUT(device under test)之间的非连续性,对互连金属和基底之间的寄生效...提出了一种新的RF-CMOS晶体管在片测试结构寄生模型,模型综合考虑了射频/微波条件下RF-MOST器件在片测试结构中的各种寄生效应.模型考虑了PAD-互连金属、互连金属-DUT(device under test)之间的非连续性,对互连金属和基底之间的寄生效应单独进行了考虑.通过引入一个新的元件,对PAD结构基底感性损耗进行表征.模型最终应用到采用CSM(Chartered Semiconductor Manufacture Ltd)0.25μm RF-CMOS工艺制造的测试结构寄生效应等效电路建模中,高达40GHz测试和仿真数据验证了模型的良好精度.展开更多
Transmission lines （T-Lines） are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor （CMOS） technology. Accurate modeling of T-lines to capture the related electric...Transmission lines （T-Lines） are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor （CMOS） technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters （per unit length） obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.展开更多
Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics ...Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-πand 2-πscalable models is made from the following aspects：the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable models.The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency（SRF） for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.展开更多
基金Supported by the National Natural Science Foundation of China (No. 90307016) the Basic Research Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList)
文摘Transmission lines （T-Lines） are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor （CMOS） technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters （per unit length） obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.
基金supported by the Scientific and Technologic Cooperation Foundation of Yangtze River Delta Area of China(Nos.2008C16017, 08515810103)the Major Science and Technology Project of China(No.2009ZX02303-05).
文摘Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-πand 2-πscalable models is made from the following aspects：the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable models.The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency（SRF） for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.
