Undoped and copper(Cu)doped zinc oxide(Zn_(1-x)Cu_(x)O,where x=0-0.065)nano crystal thin films have been deposited on glass substrate via RF/DC reactive co-sputtering technique.The aim of this work is to investigate t...Undoped and copper(Cu)doped zinc oxide(Zn_(1-x)Cu_(x)O,where x=0-0.065)nano crystal thin films have been deposited on glass substrate via RF/DC reactive co-sputtering technique.The aim of this work is to investigate the crystal structure of ZnO and Cu doped ZnO thin films and also study the effect of Cu doping on optical band gap of ZnO thin films.The identification and confirmation of the crystallinity,film thickness and surface morphology of the nano range thin films are confirmed by using X-ray diffractometer(XRD),scanning electron microscope and atomic force microscope.The XRD peak at a diffractive angle of 34.44°and Miller indices at(002)confirms the ZnO thin films.Crystallite size of undoped ZnO thin films is 27 nm and decreases from 27 nm to 22 nm with increasing the atomic fraction of Cu(x_(Cu))in the ZnO thin films from 0 to 6.5%respectively,which is calculated from XRD(002)peaks.The different bonding information of all deposited films was investigated by Fourier transform infrared spectrometer in the range of wave number between 400 cm^(-1) to 4000 cm^(-1).Optical band gap energy of all deposited thin films was analyzed by ultraviolet visible spectrophotometer,which varies from 3.35 eV to 3.19 eV with the increase of x_(Cu) from 0 to 6.5%respectively.Urbach energy of the deposited thin films increases from 115 meV to 228 meV with the increase of x_(Cu) from 0 to 6.5% respectively.展开更多
One of the primary concerns associated with ion cyclotron resonance heating(ICRH)is the enhanced impurity sputtering resulting from radio frequency(RF)sheath formation near plasma-facing components(PFCs),such as limit...One of the primary concerns associated with ion cyclotron resonance heating(ICRH)is the enhanced impurity sputtering resulting from radio frequency(RF)sheath formation near plasma-facing components(PFCs),such as limiters.Developing a sputtering model integrated with RF sheath simulations allows for a more comprehensive understanding of the kinetic behavior of incident ions and their interactions with the limiter surface.We accordingly develop an impurity sputtering model“PMSAD”,which computes the sputtering yield(amount of impurity)on the limiter surface based on incident ion characteristics and predicts the spatial distribution of impurities.The model provides a robust method for understanding and analyzing the impurity sputtering process from limiter surfaces,which is crucial for preventing ICRH surface erosion and reducing edge and core plasma contamination.展开更多
With the rapid advancement of 5G communication technology,increasingly stringent demands are placed on the performance and functionality of phase change switches.Given that RF and microwave signals exhibit characteris...With the rapid advancement of 5G communication technology,increasingly stringent demands are placed on the performance and functionality of phase change switches.Given that RF and microwave signals exhibit characteristics of high frequency,high speed,and high precision,it is imperative for phase change switches to possess fast,accurate,and reliable switching capabilities.Moreover,wafer-level compositional homogeneity and resistivity uniformity during semiconductor manufacturing are crucial for ensuring the yield and reliability of RF switches.By controlling magnetron sputter of GeTe through from four key parameters(pressure,power,Ar flow,and post-annealing)and incorporating elemental proportional compensation in the target,we achieved effective modulation over GeTe uniformity.Finally,we successfully demonstrated the process integration of GeTe phase-change RF switches on 6-inch scaled wafers.展开更多
Sm and Gd co-doped Ceria (SGDC:Sm_(0.1)Gd_(0.1)Ce_(0.8)O_(1.90)) films as the electrolytes were investigated for the IT-SOFCs (intermediate-temperature solid oxide fuel cells).SGDC sensing films were successfully prep...Sm and Gd co-doped Ceria (SGDC:Sm_(0.1)Gd_(0.1)Ce_(0.8)O_(1.90)) films as the electrolytes were investigated for the IT-SOFCs (intermediate-temperature solid oxide fuel cells).SGDC sensing films were successfully prepared on the Al_2O_3 substrates by RF-magnetron sputtering.The relationship between sputtering parameters and film microstructure was discussed, and the optimum parameters were gained.The crystal structure analysis and surface morphologic observation of the SGDC films were carried out through X-ray diffraction (XRD) and scanning electron microscopy (SEM).The oxygen ion conductivity of the SGDC film was evaluated by AC impedance spectroscopy at the different temperatures.The XRD analysis shows that the SGDC films grow preferentially along the (111) compact plane.The crystallinity of the SGDC films is enhanced with the increase of the RF sputtering power from 150 W to 250 W.The oxygen ion conductivity of the SGDC was measured at the temperature from 600℃to 800℃in air by AC impedance spectroscopy.The result shows that a high oxygen ion conductivity of 2.44×10^(-2) S.cm^(-1) was achieved at 800℃.展开更多
Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of ...Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.展开更多
The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under...The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.展开更多
TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-r...TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.展开更多
Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputt...Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.展开更多
Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by DC magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determin...Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by DC magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determined by electron probe microanalysis (EPMA). Structural characteristic was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM). First principles virtual crystal calculations for the Ti 1 x Al x N disordered alloys were used for the XRD simulations. The crystalline structure of the Ti 0.61 Al 0.39 N film was found to be a metastable single phase with NaCl (B1) structure. Its lattice constant, determined by XRD, was less than that of pure TiN. With the increase of Al content, the lattice constant of B1 phase was continually decreased, while würtzite (B4) structure was observed in the Ti 0.40 Al 0.60 N film. When x reached 0.75, the B1 phase disappeared, and only B4 phase was remained. The critical Al content for the phase transition from NaCl to würtzite structure in this paper was about 0.60, which could be explained by both the thermodynamic model and the electron theory. As-deposited Ti 1 x Al x N films exhibited excellent mechanical properties. Hardness measurements of Ti 1 x Al x N films showed a high value of 45GPa for x=0.39 and was decreased to value of 27 GPa with increasing Al at x=0.60.展开更多
Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was...Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.展开更多
To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabr...To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.展开更多
In particular, the dye-sensitised solar cells(DSSCs) have a high potential in the rational energy conversion efficiency to secure our sustainable energy source.In the present study, advanced radio frequency(RF) magnet...In particular, the dye-sensitised solar cells(DSSCs) have a high potential in the rational energy conversion efficiency to secure our sustainable energy source.In the present study, advanced radio frequency(RF) magnetron sputtering technique was applied to incorporate titanium dioxide(TiO) dopants into reduced graphene oxide(rGO) nanosheet for improving the power conversion efficiency(PCE) of DSSCs device. An optimum TiOcontent incorporated onto rGO nanosheet plays an important role in improving the PCE of DSSCs by minimising the recombination losses of photo-induced charge carriers.Based on the results obtained, 40-s sputtering duration for incorporating TiOdopants onto rGO nanosheet exhibits a maximum PCE of 8.78% than that of pure rGO film(0.68%). In fact, the presence of optimum content of TiOdopants within rGO nanosheet could act as mediators for efficient separation photo-induced charge carriers. However, the excessive of sputtering duration(e.g. 60 s) of TiOdopants onto rGO nanosheet results higher charge recombination and lowers the PCE of DSSCs(5.39%).展开更多
TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, hi...TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.展开更多
Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and ele...Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A ＂blue shift＂ of UV absorption edge is observed with the increase of working press ure.展开更多
This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,att...This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.展开更多
TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> directio...TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.展开更多
Titanium-based nitride coatings on cutting tools,press molds and dies can be used to prolong their life cycle because of their superior corrosion and oxidation resistance.TiAlN/ZrN and TiCrN/ZrN multilayer coatings we...Titanium-based nitride coatings on cutting tools,press molds and dies can be used to prolong their life cycle because of their superior corrosion and oxidation resistance.TiAlN/ZrN and TiCrN/ZrN multilayer coatings were prepared by RF magnetron sputtering,and their microstructural evolution and corrosion resistance during heat treatment were investigated.The TiAlN/ZrN and TiCrN/ZrN multilayer coatings are degraded by heating up to 600 ℃ with the formation of oxides particles on the surface.During the heat treatment,the TiCrN/ZrN and TiAlN/ZrN multilayer coatings show the lowest corrosion current density and the highest polarization resistance at temperature range of 400-500 ℃.Consequently,the TiAlN/ZrN and TiCrN/ZrN multilayer coatings show good corrosion resistance at temperature range of 400-500 ℃ during heating.展开更多
Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties...Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.展开更多
The indium-tin oxide （ITO） film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction （HJ） solar cells. To obtain high transmittance and low resistivi...The indium-tin oxide （ITO） film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction （HJ） solar cells. To obtain high transmittance and low resistivity ITO films by direct-current （DC） magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4 x 10-4 ~.m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions： oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si：H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage （Voc） of 0.626 V, a filling factor （FF） of 0.50, and a short circuit current density （Jsc） of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si：H layer was inserted between the （p） a-Si：H and （n） c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si：H.展开更多
基金Maulana Azad National Fellowship(MANF)Scheme of University Grants Commission,New Delhi,India。
文摘Undoped and copper(Cu)doped zinc oxide(Zn_(1-x)Cu_(x)O,where x=0-0.065)nano crystal thin films have been deposited on glass substrate via RF/DC reactive co-sputtering technique.The aim of this work is to investigate the crystal structure of ZnO and Cu doped ZnO thin films and also study the effect of Cu doping on optical band gap of ZnO thin films.The identification and confirmation of the crystallinity,film thickness and surface morphology of the nano range thin films are confirmed by using X-ray diffractometer(XRD),scanning electron microscope and atomic force microscope.The XRD peak at a diffractive angle of 34.44°and Miller indices at(002)confirms the ZnO thin films.Crystallite size of undoped ZnO thin films is 27 nm and decreases from 27 nm to 22 nm with increasing the atomic fraction of Cu(x_(Cu))in the ZnO thin films from 0 to 6.5%respectively,which is calculated from XRD(002)peaks.The different bonding information of all deposited films was investigated by Fourier transform infrared spectrometer in the range of wave number between 400 cm^(-1) to 4000 cm^(-1).Optical band gap energy of all deposited thin films was analyzed by ultraviolet visible spectrophotometer,which varies from 3.35 eV to 3.19 eV with the increase of x_(Cu) from 0 to 6.5%respectively.Urbach energy of the deposited thin films increases from 115 meV to 228 meV with the increase of x_(Cu) from 0 to 6.5% respectively.
基金financially supported by the National MCF Energy R&D Program(Grant No.2022YFE03190100)the National Natural Science Foundation of China(Grant Nos.12422513,12105035,U21A20438)the Xiaomi Young Talents Program。
文摘One of the primary concerns associated with ion cyclotron resonance heating(ICRH)is the enhanced impurity sputtering resulting from radio frequency(RF)sheath formation near plasma-facing components(PFCs),such as limiters.Developing a sputtering model integrated with RF sheath simulations allows for a more comprehensive understanding of the kinetic behavior of incident ions and their interactions with the limiter surface.We accordingly develop an impurity sputtering model“PMSAD”,which computes the sputtering yield(amount of impurity)on the limiter surface based on incident ion characteristics and predicts the spatial distribution of impurities.The model provides a robust method for understanding and analyzing the impurity sputtering process from limiter surfaces,which is crucial for preventing ICRH surface erosion and reducing edge and core plasma contamination.
基金supported by the National Natural Science Foundation of China(General Program,No.52473331).
文摘With the rapid advancement of 5G communication technology,increasingly stringent demands are placed on the performance and functionality of phase change switches.Given that RF and microwave signals exhibit characteristics of high frequency,high speed,and high precision,it is imperative for phase change switches to possess fast,accurate,and reliable switching capabilities.Moreover,wafer-level compositional homogeneity and resistivity uniformity during semiconductor manufacturing are crucial for ensuring the yield and reliability of RF switches.By controlling magnetron sputter of GeTe through from four key parameters(pressure,power,Ar flow,and post-annealing)and incorporating elemental proportional compensation in the target,we achieved effective modulation over GeTe uniformity.Finally,we successfully demonstrated the process integration of GeTe phase-change RF switches on 6-inch scaled wafers.
文摘Sm and Gd co-doped Ceria (SGDC:Sm_(0.1)Gd_(0.1)Ce_(0.8)O_(1.90)) films as the electrolytes were investigated for the IT-SOFCs (intermediate-temperature solid oxide fuel cells).SGDC sensing films were successfully prepared on the Al_2O_3 substrates by RF-magnetron sputtering.The relationship between sputtering parameters and film microstructure was discussed, and the optimum parameters were gained.The crystal structure analysis and surface morphologic observation of the SGDC films were carried out through X-ray diffraction (XRD) and scanning electron microscopy (SEM).The oxygen ion conductivity of the SGDC film was evaluated by AC impedance spectroscopy at the different temperatures.The XRD analysis shows that the SGDC films grow preferentially along the (111) compact plane.The crystallinity of the SGDC films is enhanced with the increase of the RF sputtering power from 150 W to 250 W.The oxygen ion conductivity of the SGDC was measured at the temperature from 600℃to 800℃in air by AC impedance spectroscopy.The result shows that a high oxygen ion conductivity of 2.44×10^(-2) S.cm^(-1) was achieved at 800℃.
基金supported by open research fund from Guangxi Key Laboratory of New Energy and Building Energy Saving, China
文摘Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.
基金supported by a 2-Year Research Grant of Pusan National University,Korea
文摘The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.
基金supported by the Dalian Foundation for Development of Science and Technology (No.2006A13GX029)
文摘TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.
文摘Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.
基金supported by "University Innovation and Research Training Program (China)" (No. 2009003)the Natural Science Foundation of Jiangsu Province (No.BK2011252)the Industry Science and Technology Supported Plan of Changzhou (No. CE20110012)
文摘Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by DC magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determined by electron probe microanalysis (EPMA). Structural characteristic was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM). First principles virtual crystal calculations for the Ti 1 x Al x N disordered alloys were used for the XRD simulations. The crystalline structure of the Ti 0.61 Al 0.39 N film was found to be a metastable single phase with NaCl (B1) structure. Its lattice constant, determined by XRD, was less than that of pure TiN. With the increase of Al content, the lattice constant of B1 phase was continually decreased, while würtzite (B4) structure was observed in the Ti 0.40 Al 0.60 N film. When x reached 0.75, the B1 phase disappeared, and only B4 phase was remained. The critical Al content for the phase transition from NaCl to würtzite structure in this paper was about 0.60, which could be explained by both the thermodynamic model and the electron theory. As-deposited Ti 1 x Al x N films exhibited excellent mechanical properties. Hardness measurements of Ti 1 x Al x N films showed a high value of 45GPa for x=0.39 and was decreased to value of 27 GPa with increasing Al at x=0.60.
基金The authors would like to thank Prof. Y.B. Wang and Mr. S. Liang of the Department of Material Physics for supporting AFM observations. The authors also would like to thank Ms. J.P. He of the State Key Laboratory for Advanced Metals and Materials for sup
文摘Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.
文摘To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.
基金financially supported by the University Malaya Prototype Grant (No. RU005G-2016)the Transdisciplinary Research Grant Scheme, TRGS (No. TR002A-2014B)+1 种基金the University Malaya Research Grant (No. RP045B-17AET)the Global Collaborative Programme-SATU Joint Research Scheme from the University of Malaya (No. ST007-2017)
文摘In particular, the dye-sensitised solar cells(DSSCs) have a high potential in the rational energy conversion efficiency to secure our sustainable energy source.In the present study, advanced radio frequency(RF) magnetron sputtering technique was applied to incorporate titanium dioxide(TiO) dopants into reduced graphene oxide(rGO) nanosheet for improving the power conversion efficiency(PCE) of DSSCs device. An optimum TiOcontent incorporated onto rGO nanosheet plays an important role in improving the PCE of DSSCs by minimising the recombination losses of photo-induced charge carriers.Based on the results obtained, 40-s sputtering duration for incorporating TiOdopants onto rGO nanosheet exhibits a maximum PCE of 8.78% than that of pure rGO film(0.68%). In fact, the presence of optimum content of TiOdopants within rGO nanosheet could act as mediators for efficient separation photo-induced charge carriers. However, the excessive of sputtering duration(e.g. 60 s) of TiOdopants onto rGO nanosheet results higher charge recombination and lowers the PCE of DSSCs(5.39%).
基金This work was supported by the National Natural Science Foundation of China(No,50376067)the Plan for Science&Technology Development of Guangzhou(2001-Z-117-01).
文摘TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.
基金financially supported by the National Natural Science Foundation of China (No. 51571010)
文摘Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A ＂blue shift＂ of UV absorption edge is observed with the increase of working press ure.
基金financial supports by National Natural Science Foundation of China(Nos.11975163 and 12175160)Nantong Basic Science Research-General Program(No.JC22022034)Natural Science Research Fund of Jiangsu College of Engineering and Technology(No.GYKY/2023/2)。
文摘This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.
基金supported by the National Natural Science Foundation of China(No.50001013)Hundred-Talent Project of CAS and the NSFC for Outstanding Young Scientists(No.59625103).
文摘TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.
文摘Titanium-based nitride coatings on cutting tools,press molds and dies can be used to prolong their life cycle because of their superior corrosion and oxidation resistance.TiAlN/ZrN and TiCrN/ZrN multilayer coatings were prepared by RF magnetron sputtering,and their microstructural evolution and corrosion resistance during heat treatment were investigated.The TiAlN/ZrN and TiCrN/ZrN multilayer coatings are degraded by heating up to 600 ℃ with the formation of oxides particles on the surface.During the heat treatment,the TiCrN/ZrN and TiAlN/ZrN multilayer coatings show the lowest corrosion current density and the highest polarization resistance at temperature range of 400-500 ℃.Consequently,the TiAlN/ZrN and TiCrN/ZrN multilayer coatings show good corrosion resistance at temperature range of 400-500 ℃ during heating.
基金supported by the National Natural Science Foundation of China under Grants No.60425101Young Excellence Project of University of Electronic Science and Technology of China(UESTC-060206)project.
文摘Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.
基金supported by the National High Technology Research and Development Program of China(Grant No.2011AA050501)
文摘The indium-tin oxide （ITO） film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction （HJ） solar cells. To obtain high transmittance and low resistivity ITO films by direct-current （DC） magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4 x 10-4 ~.m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions： oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si：H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage （Voc） of 0.626 V, a filling factor （FF） of 0.50, and a short circuit current density （Jsc） of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si：H layer was inserted between the （p） a-Si：H and （n） c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si：H.
