Neoclassical tearing mode (NTM) can degrade plasma confinement or even cause disruptions in existing tokamaks. Stabilization of the NTMs by radio frequency (rf) current is investigated by the modified Rutherford equat...Neoclassical tearing mode (NTM) can degrade plasma confinement or even cause disruptions in existing tokamaks. Stabilization of the NTMs by radio frequency (rf) current is investigated by the modified Rutherford equation (MRE) in this paper. In a range of parameters, the required rf current for mode stabilization is obtained, which is linearly proportional to the bootstrap current density for both modulated current drive (MCD) and non-modulated current drive (NMCD), linearly (quadratically) to the radial width of the rf current for MCD (NMCD), and quadratically to the radial deviation of the rf current from the rational surface for both MCD and NMCD.展开更多
A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（A...A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.展开更多
A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics ...A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.展开更多
RF circuit board has a significant impact on performance of the Digital Beam Position Monitor (DBPM) in storage ring of a synchrotron radiation facility.In this paper,a front-end RF board is designed for DBPM,and sche...RF circuit board has a significant impact on performance of the Digital Beam Position Monitor (DBPM) in storage ring of a synchrotron radiation facility.In this paper,a front-end RF board is designed for DBPM,and schematics of the RF board and the test results are given.In view of the inevitable inconsistency in the multi-channel circuit,a calibration circuit is designed to reduce such an influence.The test results show that the calibration method is useful for beam current dependence which is sensitive to channels inconsistency.展开更多
In this work, physical models of neoclassical tearing modes （NTMs） including bootstrap current and multiple modulated electron cyclotron current drive model are applied. Based on the specific physical problems durin...In this work, physical models of neoclassical tearing modes （NTMs） including bootstrap current and multiple modulated electron cyclotron current drive model are applied. Based on the specific physical problems during the suppression of NTMs by driven current, this work compares the efficiency of continuous and modulated driven currents, and simulates the physical processes of multiple modulated driven currents on suppressing rotating magnetic island. It is found that when island rotates along the poloidal direction, the suppression ability of continuous driven current can be massively reduced due to current deposition outside the island separatrix and reverse deposition direction at the X point, which can be avoided by current drive modulation. Multiple current drive has a better suppressing effect than single current drive. This work gives realistic numerical simulations by optimizing the model and parameters based on the experiments, which could provide references for successful suppression of NTMs in future advanced tokamak such as international thermonuclear experimental reactor.展开更多
An experimental investigation of the saturation ion current densities （Jions） in hydrogen inductively coupled plasma （ICP） produced by a large-power （2-32 kW） radio frequency （RF） generator is reported, then s...An experimental investigation of the saturation ion current densities （Jions） in hydrogen inductively coupled plasma （ICP） produced by a large-power （2-32 kW） radio frequency （RF） generator is reported, then some reasonable explanations are given out. With the increase of RF power, the experimental results show three stages： in the first stage （2-14 kW）, the electron temperature will rise with the increase of RF power in the ICP, thus, the Jions increases continually as the electron temperature rises in the ICP. In the second stage （14 20 kW）, as some H- ions lead to the mutual neutralization （MN）, the slope of Jio^s variation firstly decreases then increases. In the third stage （20-32 kW）, both the electronic detachment （ED） and the associative detachment （AD） in the ICP result in the destruction of H- ions, therefore, the increased amplitude of the Jions in the third stage is weaker than the one in the first stage. In addition, with the equivalent transformer model, we successfully Explain that the Jions at different radial locations in ICP has the same rule. Finally, it is found that the Jions has nothing to do with the outer/inner puffing gas pressure ratio, which is attributed to the high-speed movement of hydrogen molecules.展开更多
In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two ant...In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.展开更多
文摘Neoclassical tearing mode (NTM) can degrade plasma confinement or even cause disruptions in existing tokamaks. Stabilization of the NTMs by radio frequency (rf) current is investigated by the modified Rutherford equation (MRE) in this paper. In a range of parameters, the required rf current for mode stabilization is obtained, which is linearly proportional to the bootstrap current density for both modulated current drive (MCD) and non-modulated current drive (NMCD), linearly (quadratically) to the radial width of the rf current for MCD (NMCD), and quadratically to the radial deviation of the rf current from the rational surface for both MCD and NMCD.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204086)
文摘A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61306116 and 61472322)
文摘A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.
基金Supported by 100 Talents Program of The Chinese Academy of Sciences
文摘RF circuit board has a significant impact on performance of the Digital Beam Position Monitor (DBPM) in storage ring of a synchrotron radiation facility.In this paper,a front-end RF board is designed for DBPM,and schematics of the RF board and the test results are given.In view of the inevitable inconsistency in the multi-channel circuit,a calibration circuit is designed to reduce such an influence.The test results show that the calibration method is useful for beam current dependence which is sensitive to channels inconsistency.
基金supported by National Natural Science Foundation of China(Grand Nos.11605021,11375039 and 11275034)Natural Science Foundation of Liaoning Province(Grand No.201601074)supported by'the Fundamental Research Funds for the Central Universities'(Grand Nos.3132016128 and 3132014328)
文摘In this work, physical models of neoclassical tearing modes （NTMs） including bootstrap current and multiple modulated electron cyclotron current drive model are applied. Based on the specific physical problems during the suppression of NTMs by driven current, this work compares the efficiency of continuous and modulated driven currents, and simulates the physical processes of multiple modulated driven currents on suppressing rotating magnetic island. It is found that when island rotates along the poloidal direction, the suppression ability of continuous driven current can be massively reduced due to current deposition outside the island separatrix and reverse deposition direction at the X point, which can be avoided by current drive modulation. Multiple current drive has a better suppressing effect than single current drive. This work gives realistic numerical simulations by optimizing the model and parameters based on the experiments, which could provide references for successful suppression of NTMs in future advanced tokamak such as international thermonuclear experimental reactor.
基金supported by the National Magnetic Confinement Fusion Science Program of China(Nos.2011GB108011 and 2010GB103001)the Major International(Regional)Project Cooperation and Exchanges of China(No.11320101005)the Startup Fund from Fuzhou University(No.510071)
文摘An experimental investigation of the saturation ion current densities （Jions） in hydrogen inductively coupled plasma （ICP） produced by a large-power （2-32 kW） radio frequency （RF） generator is reported, then some reasonable explanations are given out. With the increase of RF power, the experimental results show three stages： in the first stage （2-14 kW）, the electron temperature will rise with the increase of RF power in the ICP, thus, the Jions increases continually as the electron temperature rises in the ICP. In the second stage （14 20 kW）, as some H- ions lead to the mutual neutralization （MN）, the slope of Jio^s variation firstly decreases then increases. In the third stage （20-32 kW）, both the electronic detachment （ED） and the associative detachment （AD） in the ICP result in the destruction of H- ions, therefore, the increased amplitude of the Jions in the third stage is weaker than the one in the first stage. In addition, with the equivalent transformer model, we successfully Explain that the Jions at different radial locations in ICP has the same rule. Finally, it is found that the Jions has nothing to do with the outer/inner puffing gas pressure ratio, which is attributed to the high-speed movement of hydrogen molecules.
文摘In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.
