The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost...The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.展开更多
In the process of production, transportation and assembly, cable assemblies can get a lot of electrostatic charge by friction, dragging, pulling and induction. These residual charges can be discharged when Electrostat...In the process of production, transportation and assembly, cable assemblies can get a lot of electrostatic charge by friction, dragging, pulling and induction. These residual charges can be discharged when Electrostatic sensitive device connected with it and can cause the complete failure or potential failure of the electrostatic sensitive product. In this paper, the theoretical model of cable assemblies is established by analyzing the characteristics of cable assemblies, and the equivalent RF circuit is designed. The static discharge characteristics of the cable are analyzed and verified by simulation.展开更多
文摘The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.
文摘In the process of production, transportation and assembly, cable assemblies can get a lot of electrostatic charge by friction, dragging, pulling and induction. These residual charges can be discharged when Electrostatic sensitive device connected with it and can cause the complete failure or potential failure of the electrostatic sensitive product. In this paper, the theoretical model of cable assemblies is established by analyzing the characteristics of cable assemblies, and the equivalent RF circuit is designed. The static discharge characteristics of the cable are analyzed and verified by simulation.
