A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail fo...A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.展开更多
A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface po...A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface potential and field distributions are derived.From this analysis,the optimum design condition for the maximum breakdown voltage is obtained.The dependence of the maximum breakdown voltage on the drift region length is examined and the relationship between the critical doping concentration and the front- and back- interface oxide layer thickness is discussed.The numerical simulation performed by the advanced semiconductor simulation tool,DESSIS-ISE,has been shown to support the analytical results.展开更多
An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived...An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data.展开更多
A new 2D analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices is presented. Based on the solution to the 2D Poisson＇s equation, the model gives the inf...A new 2D analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices is presented. Based on the solution to the 2D Poisson＇s equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the doping concentration,the depth and the position of the p-top region, the thickness and the doping concentration of the drift region, and the substrate doping concentration. The dependence of breakdown voltage on the length and doping concentration of the drift region is also calculated. Further more,an effective way to gain the optimum high-voltage is also proposed. All analytical results are verified by simulation results obtained by MEDICI and previous experimental data,showing the validity of the model presented here.展开更多
文摘A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.
文摘A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface potential and field distributions are derived.From this analysis,the optimum design condition for the maximum breakdown voltage is obtained.The dependence of the maximum breakdown voltage on the drift region length is examined and the relationship between the critical doping concentration and the front- and back- interface oxide layer thickness is discussed.The numerical simulation performed by the advanced semiconductor simulation tool,DESSIS-ISE,has been shown to support the analytical results.
文摘An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data.
文摘A new 2D analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices is presented. Based on the solution to the 2D Poisson＇s equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the doping concentration,the depth and the position of the p-top region, the thickness and the doping concentration of the drift region, and the substrate doping concentration. The dependence of breakdown voltage on the length and doping concentration of the drift region is also calculated. Further more,an effective way to gain the optimum high-voltage is also proposed. All analytical results are verified by simulation results obtained by MEDICI and previous experimental data,showing the validity of the model presented here.
