This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidew...This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.展开更多
基金supported in part by the National Key Research and Development Program of China(Grant No.2021YFC2203400)Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008)+1 种基金Jiangxi Province Double Thousand Plan (Grant No. S2019CQKJ2638)in part the National Natural Science Foundation of China(Grant Nos.62074053).
文摘This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.
