The Hydrodynamic Ram(HRAM)effect occurs when a high kinetic energy projectile penetrates a fluid filled area,e.g.,a liquid filled tank.The projectile transfers its momentum and kinetic energy to the fluid,what causes ...The Hydrodynamic Ram(HRAM)effect occurs when a high kinetic energy projectile penetrates a fluid filled area,e.g.,a liquid filled tank.The projectile transfers its momentum and kinetic energy to the fluid,what causes a sudden,local pressure rise,further expanding as primary shock wave in the fluid and developing a cavity.It is possible that the entire tank ruptures due to the loads transferred through the fluid to its surrounding structure.In the past decades,additionally to experimental investigations,HRAM has been studied using various computational approaches particularly focusing on the description of the Fluid-Structure Interaction(FSI).This article reviews the published experimental,analytical and numerical results and delivers a chronological overview since the end of World War II.Furthermore,HRAM mitigation measures are highlighted,which have been developed with the experimental,analytical and numerical toolboxes matured over the past 80 years.展开更多
Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type ...Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.展开更多
文摘The Hydrodynamic Ram(HRAM)effect occurs when a high kinetic energy projectile penetrates a fluid filled area,e.g.,a liquid filled tank.The projectile transfers its momentum and kinetic energy to the fluid,what causes a sudden,local pressure rise,further expanding as primary shock wave in the fluid and developing a cavity.It is possible that the entire tank ruptures due to the loads transferred through the fluid to its surrounding structure.In the past decades,additionally to experimental investigations,HRAM has been studied using various computational approaches particularly focusing on the description of the Fluid-Structure Interaction(FSI).This article reviews the published experimental,analytical and numerical results and delivers a chronological overview since the end of World War II.Furthermore,HRAM mitigation measures are highlighted,which have been developed with the experimental,analytical and numerical toolboxes matured over the past 80 years.
基金supported by National Science and Technology Major Project (2020AAA0109003)the support from Hangzhou Innovation Team Program (TD2022018)。
文摘Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.
