This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration o...This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET's simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region's interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.展开更多
The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,D...The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,DESSIS- ISE.By varying the bulk trap characteristics such as the trap density and energy level spectrum systematically,the dependence of the R- G current on both of them has been dem onstrated in details.Moreover,the silicon film doping concentration and thickness are changed to make silicon body varies from the fully- depletion m ode into the partial- ly- depletion one.The influence of the transfer of silicon body characteristics on the R- G currenthas also been care- fully examined.A better understanding is obtained of the behavior of bulk trap R- G current in the SOI lateral gat- ed- diode.展开更多
目前彩色图像可逆信息隐藏(reversible data hiding,简称RDH)大多直接将灰度图像算法应用到彩色图像的各个通道上,未能充分利用彩色通道间的相关性.提出一种基于自适应分块的彩色图像RDH算法.首先,为了充分利用通道间的相关性,提出将彩...目前彩色图像可逆信息隐藏(reversible data hiding,简称RDH)大多直接将灰度图像算法应用到彩色图像的各个通道上,未能充分利用彩色通道间的相关性.提出一种基于自适应分块的彩色图像RDH算法.首先,为了充分利用通道间的相关性,提出将彩色图像进行自适应分块;其次,为了更好地利用平滑区域,提出基于通道特性的嵌入容量分配原则以保证在平滑区域嵌入更多的信息;最后,为了提高彩色图像视觉质量,提出一种符合人眼视觉特性的B-R-G嵌入原则,优先选择对人眼视觉影响较小的通道进行嵌入.实验结果表明,在不同的嵌入容量下,该文方法载密图像的峰值信噪比(peak signal-to-noise ratio,简称PSNR)明显优于所比较的彩色图像RDH方法.展开更多
通过数值模拟手段，用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R－G电流大小的影响规律。结果表明：无论在FD还是在PD SOI MOS器件中，界面陷阱密度是决定R－G电流峰值的主要因素，硅膜厚度和沟道掺杂浓度的影响却因器...通过数值模拟手段，用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R－G电流大小的影响规律。结果表明：无论在FD还是在PD SOI MOS器件中，界面陷阱密度是决定R－G电流峰值的主要因素，硅膜厚度和沟道掺杂浓度的影响却因器件的类型而导。为了精确地用R－G电流峰值确定界面陷阱的大小，器件参数的影响也必须包括在模型之中。展开更多
基金Sponsored by Motorola CPTL(Contract No:MSPSDDLCHINA-0004)
文摘This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET's simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region's interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.
基金摩托罗拉和北京大学的联合研究项目!"Gated-Diode Method Application Development and Sensitivity Analysis"的资助 (合同号 :MSPSESTL
文摘The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,DESSIS- ISE.By varying the bulk trap characteristics such as the trap density and energy level spectrum systematically,the dependence of the R- G current on both of them has been dem onstrated in details.Moreover,the silicon film doping concentration and thickness are changed to make silicon body varies from the fully- depletion m ode into the partial- ly- depletion one.The influence of the transfer of silicon body characteristics on the R- G currenthas also been care- fully examined.A better understanding is obtained of the behavior of bulk trap R- G current in the SOI lateral gat- ed- diode.
文摘目前彩色图像可逆信息隐藏(reversible data hiding,简称RDH)大多直接将灰度图像算法应用到彩色图像的各个通道上,未能充分利用彩色通道间的相关性.提出一种基于自适应分块的彩色图像RDH算法.首先,为了充分利用通道间的相关性,提出将彩色图像进行自适应分块;其次,为了更好地利用平滑区域,提出基于通道特性的嵌入容量分配原则以保证在平滑区域嵌入更多的信息;最后,为了提高彩色图像视觉质量,提出一种符合人眼视觉特性的B-R-G嵌入原则,优先选择对人眼视觉影响较小的通道进行嵌入.实验结果表明,在不同的嵌入容量下,该文方法载密图像的峰值信噪比(peak signal-to-noise ratio,简称PSNR)明显优于所比较的彩色图像RDH方法.
文摘通过数值模拟手段，用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R－G电流大小的影响规律。结果表明：无论在FD还是在PD SOI MOS器件中，界面陷阱密度是决定R－G电流峰值的主要因素，硅膜厚度和沟道掺杂浓度的影响却因器件的类型而导。为了精确地用R－G电流峰值确定界面陷阱的大小，器件参数的影响也必须包括在模型之中。
