本研究探讨N型赝三元半导体掺多壁碳纳米管(MWCNTs)的块体热电材料的热电性能。通过将MWCNTs引入N型半导体基体中,研究了其对热电性能(包括电导率、热导率和Seebeck系数)的影响。结果表明,掺入MWCNTs后,材料的Seebeck系数略有下降,电导...本研究探讨N型赝三元半导体掺多壁碳纳米管(MWCNTs)的块体热电材料的热电性能。通过将MWCNTs引入N型半导体基体中,研究了其对热电性能(包括电导率、热导率和Seebeck系数)的影响。结果表明,掺入MWCNTs后,材料的Seebeck系数略有下降,电导率显著提升,主要是由于MWCNTs的掺入通过提升载流子浓度和引入晶界缺陷,改善载流子传输能力并抑制了声子散射,从而优化材料的热电优值。In this paper, an investigation into the thermoelectric characteristics of N-type pseudo-ternary semiconductor bulk materials, which have been doped with multi-walled carbon nanotubes (MWCNTs), is conducted. The integration of MWCNTs into the N-type semiconductor matrix has been meticulously examined to ascertain its impact on various thermoelectric properties, such as electrical conductivity, thermal conductivity, and the Seebeck coefficient. Findings indicate that the doping process marginally diminishes the Seebeck coefficient of the material, whereas there is a marked enhancement in electrical conductivity. This enhancement is primarily attributed to the augmented carrier transport capabilities, which are a consequence of the increased carrier concentration and the introduction of grain boundary defects, as well as the mitigation of phonon scattering. Consequently, these modifications lead to an optimization of the thermoelectric figure of merit for the material.展开更多
文摘本研究探讨N型赝三元半导体掺多壁碳纳米管(MWCNTs)的块体热电材料的热电性能。通过将MWCNTs引入N型半导体基体中,研究了其对热电性能(包括电导率、热导率和Seebeck系数)的影响。结果表明,掺入MWCNTs后,材料的Seebeck系数略有下降,电导率显著提升,主要是由于MWCNTs的掺入通过提升载流子浓度和引入晶界缺陷,改善载流子传输能力并抑制了声子散射,从而优化材料的热电优值。In this paper, an investigation into the thermoelectric characteristics of N-type pseudo-ternary semiconductor bulk materials, which have been doped with multi-walled carbon nanotubes (MWCNTs), is conducted. The integration of MWCNTs into the N-type semiconductor matrix has been meticulously examined to ascertain its impact on various thermoelectric properties, such as electrical conductivity, thermal conductivity, and the Seebeck coefficient. Findings indicate that the doping process marginally diminishes the Seebeck coefficient of the material, whereas there is a marked enhancement in electrical conductivity. This enhancement is primarily attributed to the augmented carrier transport capabilities, which are a consequence of the increased carrier concentration and the introduction of grain boundary defects, as well as the mitigation of phonon scattering. Consequently, these modifications lead to an optimization of the thermoelectric figure of merit for the material.
