To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for...To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.展开更多
To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, ...To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.展开更多
A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learn...A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learning and indirect learning structure,the proposed DPD suggests a two-step method to identify the predistortion.Firstly,a negative feedback based iteration is used to estimate the optimal DPD signal.Then the corresponding DPD parameters are extracted by forward modeling with the input signal and optimal DPD signal.The iteration can be applied to both single-band and dual-band PAs,which will achieve superior linear performance than the conventional direct learning DPD while having a relatively low computational complexity.The measurement is carried out on a broadband Doherty PA(DPA)with a 200 MHz bandwidth LTE signal at 2.1 GHz,and on a 5G DPA with two 10 MHz LTE signals at 3.4/3.6 GHz for validation in dual-band scenarios.展开更多
A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the paramet...A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.展开更多
RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryl...RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth.展开更多
In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established n...In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.展开更多
RF power amplifiers （PAs） are usually considered as memoryless devices in most existing predistortion techniques. However, in broadband communication systems, such as WCDMA, the PA memory effects are significant, an...RF power amplifiers （PAs） are usually considered as memoryless devices in most existing predistortion techniques. However, in broadband communication systems, such as WCDMA, the PA memory effects are significant, and memoryless predistortion cannot linearize the PAs effectively. After analyzing the PA memory effects, a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects. The indirect learning architecture is adopted to design the predistortion scheme and the reeursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter. Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.展开更多
An envelope domain multislice behavioral modeling is introduced. The tradition AM-AM and AM- PM characteristics of power amplifiers axe extended to envelope domain and base-band filter is applied to distortion complex...An envelope domain multislice behavioral modeling is introduced. The tradition AM-AM and AM- PM characteristics of power amplifiers axe extended to envelope domain and base-band filter is applied to distortion complex envelope signal for description of the envelope memory effect. Using traditional one and two-tone tests, the coefficients of nonlinear model and the FIR filter can be extracted. At last the model has been applied to a 10 W WCDMA Power amplifier to predict its output signal. And simulation results show that the model output conforms very well to the traditional transistor level simulation results.展开更多
In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined a...In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.展开更多
For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control ...For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control considering resistance voltage drop and derives its mathematical models.The improved algorithm is compared with the former one.The simulation and experimental results show that the improved algorithm can effectively reduce the output current ripple,achieve good tracking of the given current,improve the control accuracy,and verify the effectiveness and superiority of the method.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improve...The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.展开更多
Amplified spontaneous emission （ASE） in diode laser pumped double-clad fiber power amplifiers is studied experimentally, The dependences of ASE on fiber length and cross section of active core are discussed and the ...Amplified spontaneous emission （ASE） in diode laser pumped double-clad fiber power amplifiers is studied experimentally, The dependences of ASE on fiber length and cross section of active core are discussed and the variations of ASE power as the function of pumping and signal power are investigated. There are indications that long fibers with large mode area need stronger input signals to suppress ASE. It is shown that a 150 mW input signal can suppress the ASE by 40 dB in a 4 m large mode area fiber, while to efficiently suppress the ASE in a 10 m fiber, stronger input signal is needed. 12.5 W and 16.1 W single frequency CW output power are obtained from 4 m fiber and 10 m fiber respectively. No stimulated Brillouin scattering （SBS） was observed展开更多
In this paper, the synchronous concurrent dual-band RF signal is used to drive the RF Power Amplifier (PA). The nonlinear characterization of a concurrent dual-band RF PA is discussed while two band signals in the dua...In this paper, the synchronous concurrent dual-band RF signal is used to drive the RF Power Amplifier (PA). The nonlinear characterization of a concurrent dual-band RF PA is discussed while two band signals in the dual-band are modulated by CDMA2000 and WCDMA signals. When the two band signals in the dual-band of the PA are modulated with the same signals, it is found that the nonlinearity of the PA can be expressed by any of the two corresponding baseband data. On the other hand, when the two band signals in the dual-band of the PA are modulated with two different signals, the PA nonlinearity cannot be characterized by any of the two corresponding baseband data. In this case, its nonlinearity has to be denoted by a composite signals consisting of the two baseband signals. Consequently, the requirements for the speed of the A/D converter can be largely reduced. The experimental results with CDMA2000 and WCDMA signals demonstrate the speed of the A/D converter required is only 30 M Sample Per Second (SaPS), but it will be at least 70 M SaPS for the conventional method.展开更多
In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development ...In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.展开更多
A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally dif...A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor （LDMOS） transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.展开更多
In modern broadband communication systems,radio frequency power amplifiers suffer from severe nonlinear distortion and memory effects.To accurately analyze the impact of their characteristics on communication systems,...In modern broadband communication systems,radio frequency power amplifiers suffer from severe nonlinear distortion and memory effects.To accurately analyze the impact of their characteristics on communication systems,it is necessary to establish precise amplifier models.In recent years,deep neural networks have been widely applied to power amplifier modeling.In order to describe the complex dynamic characteristics of power amplifiers,the deep neural network often requires a large number of hidden layers,which leads to large model scale and difficulties in training.To address this issue,a novel behavioral model is proposed in this paper.It combines the classical Saleh model with a deep feedforward neural network.Since the Saleh model can be identified using the least squares method without requiring iterative gradient algorithms,the computational load of model training is significantly reduced.Simulation results demonstrate that,compared to deep neural network models with equivalent parameter quantities,the proposed model exhibits higher accuracy and faster convergence.展开更多
This paper presents a novel topology to control the baseband impedance of a power amplifier(PA)to avoid performance deterioration in concurrent dual-band mode.This topology can avoid pure resonance of capacitors and i...This paper presents a novel topology to control the baseband impedance of a power amplifier(PA)to avoid performance deterioration in concurrent dual-band mode.This topology can avoid pure resonance of capacitors and inductors LC,which leads to a high impedance at some frequency points.Consequently,it can be applied to transmitters that are excited by broadband signals.In particular,by adjusting the circuit parameters and increasing stages,the impedance of the key frequency bands can be flexibly controlled.A PA is designed to support this design idea.Its saturated output power is around 46.7 dBm,and the drain efficiency is>68.2%(1.8-2.3 GHz).Under concurrent two-tone excitation,the drain efficiency reaches around 40%even under 5.5 dB back-off power with the tone spacing from 10 MHz to 500 MHz.These results demonstrate that the proposed topology is capable of controlling wideband baseband impedance.展开更多
Three linear CMOS power amplifiers （PAs） with high output power （more than watt-level output power） for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz ...Three linear CMOS power amplifiers （PAs） with high output power （more than watt-level output power） for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz PAs using an on-chip parallel combining transformer （PCT） and one 1.95 GHz PA using an on-chip series combining transformer （SCT） to combine output signals of multiple power stages. Furthermore, some linearization techniques including adaptive bias, diode linearizer, multi-gated transistors （MGTR） and the second harmonic control are applied in these PAs. Using the proposed power combiner, these three PAs are designed and fabricated in TSMC 0.18 μm RFCMOS process. According to the measurement results, the proposed two linear 2.4 GHz PAs achieve a gain of 33.2 dB and 34.3 dB, a maximum output power of 30.7 dBm and 29.4 dBm, with 29% and 31.3% of peak PAE, respectively. According to the simulation results, the presented linear 1.95 GHz PA achieves a gain of 37.5 dB, a maximum output power of 34.3 dBm with 36.3% of peak PAE.展开更多
This paper presents a 2.4 GHz hybrid integrated active circulator consisting of three power amplifiers and three PCB-based Wilkinson power dividers. The power amplifiers were designed and fabricated in a standard 0.35...This paper presents a 2.4 GHz hybrid integrated active circulator consisting of three power amplifiers and three PCB-based Wilkinson power dividers. The power amplifiers were designed and fabricated in a standard 0.35-μm AlGaN/GaN HEMT technology, and combined with three traditional power dividers on FR4 using bonding wires. Due to the isolation of power dividers, the isolation between three ports is achieved; meanwhile, due to the unidirectional characteristics of the power amplifiers, the nonreciprocal transfer characteristic of the circulator is realized. The measured insertion gain of the proposed active circulator is about 2-2.7 dB at the center frequency of 2.4 GHz, the isolation between three ports is better than 20 dB over 1.2-3.4 GHz, and the output power of the designed active circulator achieves up to 20.1-21.2 dBm at the center frequency.展开更多
基金The National High Technology Research and Development Program of China (863 Program) (No.2008AA01Z211)the Project of Industry-Academia-Research Demonstration Base of Education Ministry of Guangdong Province (No.2007B090200012)
文摘To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.
文摘To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.
基金National Key R&D Program of China under Grant No.2018YFB1801603 and No.2017YFF0206201National Sci⁃ence and Technology Major Project under Grant 2017ZX03001024,NSFC under Grant No.61801259 and Beijing National Research Center for Infor⁃mation Science and Technology(BNRist).
文摘A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learning and indirect learning structure,the proposed DPD suggests a two-step method to identify the predistortion.Firstly,a negative feedback based iteration is used to estimate the optimal DPD signal.Then the corresponding DPD parameters are extracted by forward modeling with the input signal and optimal DPD signal.The iteration can be applied to both single-band and dual-band PAs,which will achieve superior linear performance than the conventional direct learning DPD while having a relatively low computational complexity.The measurement is carried out on a broadband Doherty PA(DPA)with a 200 MHz bandwidth LTE signal at 2.1 GHz,and on a 5G DPA with two 10 MHz LTE signals at 3.4/3.6 GHz for validation in dual-band scenarios.
基金The National Natural Science Foundation of China(No.60621002)the National High Technology Research and Development Pro-gram of China(863 Program)(No.2007AA01Z2B4).
文摘A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.
基金Project (No. 60372026) supported by the National Natural ScienceFoundation of China
文摘RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth.
文摘In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.
基金the National Natural Science Foundation of China (60671037).
文摘RF power amplifiers （PAs） are usually considered as memoryless devices in most existing predistortion techniques. However, in broadband communication systems, such as WCDMA, the PA memory effects are significant, and memoryless predistortion cannot linearize the PAs effectively. After analyzing the PA memory effects, a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects. The indirect learning architecture is adopted to design the predistortion scheme and the reeursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter. Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.
文摘An envelope domain multislice behavioral modeling is introduced. The tradition AM-AM and AM- PM characteristics of power amplifiers axe extended to envelope domain and base-band filter is applied to distortion complex envelope signal for description of the envelope memory effect. Using traditional one and two-tone tests, the coefficients of nonlinear model and the FIR filter can be extracted. At last the model has been applied to a 10 W WCDMA Power amplifier to predict its output signal. And simulation results show that the model output conforms very well to the traditional transistor level simulation results.
基金supported by National Natural Science Foundations of China (No.61971052 and No.U20A20203)Key Research and Development Project of Guangdong Province (2020B0101080001)
文摘In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.
基金supported by the National Science Foundation of China(No.51607096)。
文摘For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control considering resistance voltage drop and derives its mathematical models.The improved algorithm is compared with the former one.The simulation and experimental results show that the improved algorithm can effectively reduce the output current ripple,achieve good tracking of the given current,improve the control accuracy,and verify the effectiveness and superiority of the method.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
文摘The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.
基金the Ministerial Level Advanced Research Foundation (41302010107)
文摘Amplified spontaneous emission （ASE） in diode laser pumped double-clad fiber power amplifiers is studied experimentally, The dependences of ASE on fiber length and cross section of active core are discussed and the variations of ASE power as the function of pumping and signal power are investigated. There are indications that long fibers with large mode area need stronger input signals to suppress ASE. It is shown that a 150 mW input signal can suppress the ASE by 40 dB in a 4 m large mode area fiber, while to efficiently suppress the ASE in a 10 m fiber, stronger input signal is needed. 12.5 W and 16.1 W single frequency CW output power are obtained from 4 m fiber and 10 m fiber respectively. No stimulated Brillouin scattering （SBS） was observed
基金Supported by the National Science and Technology Major Project of China (2010ZX03007-003-04)the National Natural Science Foundation of China (No. 61171040)+4 种基金the Key Project of International Cooperation of the Provincial Science and Technology Major Projects of Zhejiang (2010C14007)the Provincial Natural Science Foundation of Zhejiang (Y1101270)the Natural Science Foundation of Ningbo (2011A610188)Key Project of International Scientific and Technical Cooperation of Yunnan (2009AC010)Excellent Papers Engagement Fund of Ningbo University (PY20100004)
文摘In this paper, the synchronous concurrent dual-band RF signal is used to drive the RF Power Amplifier (PA). The nonlinear characterization of a concurrent dual-band RF PA is discussed while two band signals in the dual-band are modulated by CDMA2000 and WCDMA signals. When the two band signals in the dual-band of the PA are modulated with the same signals, it is found that the nonlinearity of the PA can be expressed by any of the two corresponding baseband data. On the other hand, when the two band signals in the dual-band of the PA are modulated with two different signals, the PA nonlinearity cannot be characterized by any of the two corresponding baseband data. In this case, its nonlinearity has to be denoted by a composite signals consisting of the two baseband signals. Consequently, the requirements for the speed of the A/D converter can be largely reduced. The experimental results with CDMA2000 and WCDMA signals demonstrate the speed of the A/D converter required is only 30 M Sample Per Second (SaPS), but it will be at least 70 M SaPS for the conventional method.
基金supported in part by the National Natural Science Foundation of China under Grant Nos.62101117 and 62188102in part by ZTE Industry-University-Institute Cooperation Fundsin part by the Project funded by China Postdoctoral Science Foundation under Grant Nos.2021M700763 and 2022T150113.
文摘In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.
文摘A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor （LDMOS） transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.
基金supported by the International Education Research Special Project of Zhejiang University of Science and Technology(No.2022IERC005).
文摘In modern broadband communication systems,radio frequency power amplifiers suffer from severe nonlinear distortion and memory effects.To accurately analyze the impact of their characteristics on communication systems,it is necessary to establish precise amplifier models.In recent years,deep neural networks have been widely applied to power amplifier modeling.In order to describe the complex dynamic characteristics of power amplifiers,the deep neural network often requires a large number of hidden layers,which leads to large model scale and difficulties in training.To address this issue,a novel behavioral model is proposed in this paper.It combines the classical Saleh model with a deep feedforward neural network.Since the Saleh model can be identified using the least squares method without requiring iterative gradient algorithms,the computational load of model training is significantly reduced.Simulation results demonstrate that,compared to deep neural network models with equivalent parameter quantities,the proposed model exhibits higher accuracy and faster convergence.
基金Project supported by the National Natural Science Foundation of China(No.62001061)the Science and Technology Research Program of Chongqing Municipal Education Commission,China(No.KJQN202201525)+1 种基金the Natural Science Foundation of Chongqing,China(No.CSTB2022NSCQ-MSX0453)the Research Foundation of Chongqing University of Science and Technology,China(No.CKRC2020029)。
文摘This paper presents a novel topology to control the baseband impedance of a power amplifier(PA)to avoid performance deterioration in concurrent dual-band mode.This topology can avoid pure resonance of capacitors and inductors LC,which leads to a high impedance at some frequency points.Consequently,it can be applied to transmitters that are excited by broadband signals.In particular,by adjusting the circuit parameters and increasing stages,the impedance of the key frequency bands can be flexibly controlled.A PA is designed to support this design idea.Its saturated output power is around 46.7 dBm,and the drain efficiency is>68.2%(1.8-2.3 GHz).Under concurrent two-tone excitation,the drain efficiency reaches around 40%even under 5.5 dB back-off power with the tone spacing from 10 MHz to 500 MHz.These results demonstrate that the proposed topology is capable of controlling wideband baseband impedance.
基金Project supported by the National Natural Science Foundation of China(No.61076030)
文摘Three linear CMOS power amplifiers （PAs） with high output power （more than watt-level output power） for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz PAs using an on-chip parallel combining transformer （PCT） and one 1.95 GHz PA using an on-chip series combining transformer （SCT） to combine output signals of multiple power stages. Furthermore, some linearization techniques including adaptive bias, diode linearizer, multi-gated transistors （MGTR） and the second harmonic control are applied in these PAs. Using the proposed power combiner, these three PAs are designed and fabricated in TSMC 0.18 μm RFCMOS process. According to the measurement results, the proposed two linear 2.4 GHz PAs achieve a gain of 33.2 dB and 34.3 dB, a maximum output power of 30.7 dBm and 29.4 dBm, with 29% and 31.3% of peak PAE, respectively. According to the simulation results, the presented linear 1.95 GHz PA achieves a gain of 37.5 dB, a maximum output power of 34.3 dBm with 36.3% of peak PAE.
基金supported by the National Science Foundation for Distinguished Young Scholars of China(No.61225001)
文摘This paper presents a 2.4 GHz hybrid integrated active circulator consisting of three power amplifiers and three PCB-based Wilkinson power dividers. The power amplifiers were designed and fabricated in a standard 0.35-μm AlGaN/GaN HEMT technology, and combined with three traditional power dividers on FR4 using bonding wires. Due to the isolation of power dividers, the isolation between three ports is achieved; meanwhile, due to the unidirectional characteristics of the power amplifiers, the nonreciprocal transfer characteristic of the circulator is realized. The measured insertion gain of the proposed active circulator is about 2-2.7 dB at the center frequency of 2.4 GHz, the isolation between three ports is better than 20 dB over 1.2-3.4 GHz, and the output power of the designed active circulator achieves up to 20.1-21.2 dBm at the center frequency.
