The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to ...The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.展开更多
A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable...A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable of constructing a microstructure precisely.PS is used as a sacrificial layer,and releasing holes are etched in the film.TMAH solution with additional Si powder and (NH_4)_2S_2O_8 is used to remove PS through the small releasing holes without eroding uncovered Al.The designed fabrication process is full compatible with standard CMOS process.展开更多
A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately...A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.展开更多
Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a ...Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a fluorescent spectrograph where blue-violet light is observed. The decision of the resistivity of Si substrates is provided.展开更多
A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon fil...A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam evaporator.This wafer is bonded with other silicon wafer with a thermal oxide layer at room temperature.The bonded pairs are split along the porous silicon layer during subsequent thermal annealing.Thus the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator structure.SEM,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.展开更多
The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expec...The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expected to improve the stability and the smoothness of the surface and the mechanical property of the thick porous silicon films.The microstructure of the PS thick films with thicknesse of 20μm and 70μm has been studied.The SEM images show significant improved smoothness on surface of PS films,and XRD spectra suggest the formation of oxide layer after post-treating in H 2O 2.展开更多
Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is sh...Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.展开更多
The interaction between S2 molecule and SiHx （x=1, 2, 3） in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, ...The interaction between S2 molecule and SiHx （x=1, 2, 3） in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, Si-O-Si and OH species is built. By analyzing the binding energy and electronic transfer, we conclude that the interaction of S2 molecule with SiHx （x=1, 2, 3） is much stronger than the interaction of S2 molecule with CH3 and OH, as S2 molecule is located in different sites of the model. Using the transition state theory, we study the Si2H6＋S2→H3SiH2SiS＋HS reaction, and the reaction energy barrier is 50.2 kJ/mol, which indicates that the reaction is easy to occur.展开更多
Lotus-type porous silicon with elongated pores was fabricated by unidirectional solidification under pressurized hydrogen. Porosity, pore diameter, and pore length can be adjusted by changing solidification speed and ...Lotus-type porous silicon with elongated pores was fabricated by unidirectional solidification under pressurized hydrogen. Porosity, pore diameter, and pore length can be adjusted by changing solidification speed and hydrogen pressure. The porosity of the ingot is nearly constant under different solidification speeds, but decreases with the increase of hydrogen pressure. The overall porosities of ingots fabricated at different hydrogen pressures were evaluated through a theoretical model. Findings are in good agreement with experimental values. The average pore diameter and pore length increase simultaneously while the average pore aspect ratio changes slightly with the decreases of solidification speed and hydrogen pressure. The average pore length is raised from 7 to 24 mm and the pore aspect ratio is raised from 8 to 20 respectively with the average pore diameter promoted by about 0.3 mm through improving the superheat degree of the melt from 200 to 300 K.展开更多
Porous silicon(Si)nanostructures have aroused much interest as lithium-ion battery anodes because of the large space to accommodate the volume change in lithiation and delithiation and shorter ion transfer distance.Ho...Porous silicon(Si)nanostructures have aroused much interest as lithium-ion battery anodes because of the large space to accommodate the volume change in lithiation and delithiation and shorter ion transfer distance.However,fabrication of porous structures tends to be difficult to control and complex,so,the final electrochemical performance can be compromised.Herein,a modest magnesiothermic reduction(MMR)reaction is demonstrated to produce blackberry-like porous Si nanospheres(PSSs)controllably using magnesium silicide(Mg_(2)Si)as Mg source and SiO_(2)nanospheres as the reactant.This improved MR method provides good control of the kinetics and heat release compared to the traditional MR(TMR)method using Mg powder as the reactant.The PSSs obtained by MMR reaction has higher structural integrity than that fabricated by TMR.After encapsulation with reduced graphene oxide,the Si/C composite exhibits superior cycling stability and rates such as a high reversible capacity of 1034 mAh·g^(-1)at0.5 C(4200 mAh·g^(-1)at 1.0 C)after 1000 cycles,capacity retention of 79.5%,and high rate capacity of 497 mAh·g^(-1)at 2.0 C.This strategy offers a new route to fabricate highperformance porous Si anodes and can be extended to other materials such as germanium.展开更多
A water-quenching technique has been adopted to evaluate thermal shock fracture and fatigue behaviors of porous Si3N4 ceramics in an air atmosphere. The high-porosity Si3N4 ceramics exhibit a higher strength retention...A water-quenching technique has been adopted to evaluate thermal shock fracture and fatigue behaviors of porous Si3N4 ceramics in an air atmosphere. The high-porosity Si3N4 ceramics exhibit a higher strength retention and a better resistance to thermal shock fatigue because of its role of the pores as crack arresters.A dense and coherent surface oxide layer leads to a significant benefit in residual strength during thermal fatigue, however, an increased fatigue number to 30 th cycle cannot cause a further influence although a thicker oxide layer presents, which is attributed to holes defect and disappearance of part intergranular phase.展开更多
ZnS films are deposited by pulsed laser deposition on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. Scanning electron microscope images reveal that the surface...ZnS films are deposited by pulsed laser deposition on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS （111） direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot.展开更多
The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by ...The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.展开更多
The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a...The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p ＋-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.展开更多
We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) fre...We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) frequency band are simulated by the finite element method(FEM). The parameters including the gap between the nanowires and Ag partition, the height of the nanowire, the thickness of the Ag partition, and the Fermi level of graphene, are optimized. The simulation results show that a normalized mode field area of ~10-4 and a figure of merit of ~100 can be achieved. Compared with the cylindrical GCNW and isolated GCNW, the proposed wedge GCNW has good electric field enhancement.A waveguide sensitivity of 32.28 is obtained, which indicates the prospects of application in refractive index(RI) sensing in THz frequency band. Due to the adjustable plasmonic characteristics by changing the Fermi level(EF), the proposed structure has promising applications in the electro-optic modulations, optical interconnects, and optical switches.展开更多
Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation...Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.展开更多
CoFe_2O_4 ferrite nanowire arrays are fabricated in porous silicon templates. The porous silicon templates are prepared via metal-assisted chemical etching with gold（Au） nanoparticles as the catalyst. Subsequently, ...CoFe_2O_4 ferrite nanowire arrays are fabricated in porous silicon templates. The porous silicon templates are prepared via metal-assisted chemical etching with gold（Au） nanoparticles as the catalyst. Subsequently, CoFe_2O_4 ferrite nanowires are successfully synthesized into porous silicon templates by the sol–gel method. The magnetic hysteresis loop of nanowire array shows an isotropic feature of magnetic properties. The coercivity and squareness ratio（M_r/M_s） of ensemble nanowires are found to be 630 Oe（1 Oe = 79.5775 A·m^（-1） and 0.4 respectively. However, the first-order reversal curve（FORC） is adopted to reveal the probability density function of local magnetostatic properties（i.e., interwire interaction field and coercivity）. The FORC diagram shows an obvious distribution feature for interaction field and coercivity. The local coercivity with a value of about 1000 Oe is found to have the highest probability.展开更多
Mechanical properties of micro-structured porous silicon film （PS） were studied combining X-ray diffraction with micro-Raman spectroscopy. The micro-structured porous silicon samples with different porosities rangin...Mechanical properties of micro-structured porous silicon film （PS） were studied combining X-ray diffraction with micro-Raman spectroscopy. The micro-structured porous silicon samples with different porosities ranging from 30.7700 to 96.2500 were obtained by chemical etching. Lattice parameters of the samples were measured using X-ray diffraction and its maximal change is up to （1.000.） This lattice mismatch with the bulk silicon substrate may introduce residual stress to the porous film. The residual stress measurement by micro-Raman spectroscopy reveals that the maximum of tensile residual stress has reached GPa level in the porous film. Moreover, the lattice mismatch and its corresponding residual stress are increasing with the porosity of PS, but average （elastic） modulus is about 14.5 GPa, one order of magnitude lower than that of substrate Si. The mechanical properties of PS have a close relation with its micro-pore structure.展开更多
Two-layer structure consisting of PS/PMMA-DR1 composite film planar waveguide layer on porous silicon cladding layer was fabricated in our experiment. The induced grating based on the third nonlinear optical propertie...Two-layer structure consisting of PS/PMMA-DR1 composite film planar waveguide layer on porous silicon cladding layer was fabricated in our experiment. The induced grating based on the third nonlinear optical properties was formed by interaction of two Nd∶YAG laser beams at 1064nm in the porous silicon/PMMA-DR1 waveguide. The diffraction efficiency of the first order diffracted light is measured to be about 0.2% of the total output.展开更多
The fabrication of the oxidized porous silicon waveguide prism is reported by selectively electrochemical anodisation process. The direction changes of light beams in TE and TM polarization out of this waveguide prism...The fabrication of the oxidized porous silicon waveguide prism is reported by selectively electrochemical anodisation process. The direction changes of light beams in TE and TM polarization out of this waveguide prism were respectively measured,and the experimental results were analyzed.展开更多
文摘The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.
文摘A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable of constructing a microstructure precisely.PS is used as a sacrificial layer,and releasing holes are etched in the film.TMAH solution with additional Si powder and (NH_4)_2S_2O_8 is used to remove PS through the small releasing holes without eroding uncovered Al.The designed fabrication process is full compatible with standard CMOS process.
文摘A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.
文摘Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a fluorescent spectrograph where blue-violet light is observed. The decision of the resistivity of Si substrates is provided.
文摘A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam evaporator.This wafer is bonded with other silicon wafer with a thermal oxide layer at room temperature.The bonded pairs are split along the porous silicon layer during subsequent thermal annealing.Thus the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator structure.SEM,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.
文摘The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expected to improve the stability and the smoothness of the surface and the mechanical property of the thick porous silicon films.The microstructure of the PS thick films with thicknesse of 20μm and 70μm has been studied.The SEM images show significant improved smoothness on surface of PS films,and XRD spectra suggest the formation of oxide layer after post-treating in H 2O 2.
文摘Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.
文摘The interaction between S2 molecule and SiHx （x=1, 2, 3） in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, Si-O-Si and OH species is built. By analyzing the binding energy and electronic transfer, we conclude that the interaction of S2 molecule with SiHx （x=1, 2, 3） is much stronger than the interaction of S2 molecule with CH3 and OH, as S2 molecule is located in different sites of the model. Using the transition state theory, we study the Si2H6＋S2→H3SiH2SiS＋HS reaction, and the reaction energy barrier is 50.2 kJ/mol, which indicates that the reaction is easy to occur.
基金Project(51271096)supported by the National Natural Science Foundation of ChinaProject(NCET-12-0310)supported by the Program for New Century Excellent Talents in University,China
文摘Lotus-type porous silicon with elongated pores was fabricated by unidirectional solidification under pressurized hydrogen. Porosity, pore diameter, and pore length can be adjusted by changing solidification speed and hydrogen pressure. The porosity of the ingot is nearly constant under different solidification speeds, but decreases with the increase of hydrogen pressure. The overall porosities of ingots fabricated at different hydrogen pressures were evaluated through a theoretical model. Findings are in good agreement with experimental values. The average pore diameter and pore length increase simultaneously while the average pore aspect ratio changes slightly with the decreases of solidification speed and hydrogen pressure. The average pore length is raised from 7 to 24 mm and the pore aspect ratio is raised from 8 to 20 respectively with the average pore diameter promoted by about 0.3 mm through improving the superheat degree of the melt from 200 to 300 K.
基金the National Natural Science Foundation of China(Nos.51974208 and51504171)the Major Project of Technology Innovation of Hubei Province(No.2018AAA011)+4 种基金the Special Project of Central Government for Local Science and Technology Development of Hubei Province(No.2019ZYYD024)the Innovation Group of Natural Science Foundation of Hubei Province(No.2019CFA020)Wuhan Yellow Crane Talents ProgramCity University of Hong Kong Applied Research Grant(ARG)(No.9667122)Hong Kong Research Grants Council(RGC)General Research Funds(GRF)(No.City U 11205617)。
文摘Porous silicon(Si)nanostructures have aroused much interest as lithium-ion battery anodes because of the large space to accommodate the volume change in lithiation and delithiation and shorter ion transfer distance.However,fabrication of porous structures tends to be difficult to control and complex,so,the final electrochemical performance can be compromised.Herein,a modest magnesiothermic reduction(MMR)reaction is demonstrated to produce blackberry-like porous Si nanospheres(PSSs)controllably using magnesium silicide(Mg_(2)Si)as Mg source and SiO_(2)nanospheres as the reactant.This improved MR method provides good control of the kinetics and heat release compared to the traditional MR(TMR)method using Mg powder as the reactant.The PSSs obtained by MMR reaction has higher structural integrity than that fabricated by TMR.After encapsulation with reduced graphene oxide,the Si/C composite exhibits superior cycling stability and rates such as a high reversible capacity of 1034 mAh·g^(-1)at0.5 C(4200 mAh·g^(-1)at 1.0 C)after 1000 cycles,capacity retention of 79.5%,and high rate capacity of 497 mAh·g^(-1)at 2.0 C.This strategy offers a new route to fabricate highperformance porous Si anodes and can be extended to other materials such as germanium.
基金financial support of the project from the National Natural Science Foundation of China (Nos. 51272206 and 51472198)the Program for Changjiang Scholars and Innovative Research Team in University (No. IRT1280)+2 种基金the National Key Laboratory Functional Composite (No. 9140C560109130C56201)the Fundamental Research Funds for the Central University (No. xkjc2014009)the State Key Laboratory for Mechanical Behavior of Materials (No. 20121207)
文摘A water-quenching technique has been adopted to evaluate thermal shock fracture and fatigue behaviors of porous Si3N4 ceramics in an air atmosphere. The high-porosity Si3N4 ceramics exhibit a higher strength retention and a better resistance to thermal shock fatigue because of its role of the pores as crack arresters.A dense and coherent surface oxide layer leads to a significant benefit in residual strength during thermal fatigue, however, an increased fatigue number to 30 th cycle cannot cause a further influence although a thicker oxide layer presents, which is attributed to holes defect and disappearance of part intergranular phase.
基金Supported by the Natural Science Foundation of Shandong Province under Grant No Y2002A09.
文摘ZnS films are deposited by pulsed laser deposition on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS （111） direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot.
基金the National Natural Science Foundation of China (No. 69971014) and the Shandong Provincial Natural Science Foundation (No. Y9
文摘The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60771019 and 60801018)the Tianjin Key Research Program of Application Foundation and Advanced Technology,China (Grant No. 11JCZDJC15300)
文摘The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p ＋-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.
基金Project supported by the National Natural Science Foundation of China(Grant No.61627818)the Key Project of Henan Provincial Education Department,China(Grant No.19A510002)+1 种基金the Natural Science Project of the Cultivation Foundation of Henan Provincial Normal University,China(Grant No.2017PL04)the Ph.D.Program of Henan Normal University,China(Grant Nos.5101239170010 and gd17167)。
文摘We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) frequency band are simulated by the finite element method(FEM). The parameters including the gap between the nanowires and Ag partition, the height of the nanowire, the thickness of the Ag partition, and the Fermi level of graphene, are optimized. The simulation results show that a normalized mode field area of ~10-4 and a figure of merit of ~100 can be achieved. Compared with the cylindrical GCNW and isolated GCNW, the proposed wedge GCNW has good electric field enhancement.A waveguide sensitivity of 32.28 is obtained, which indicates the prospects of application in refractive index(RI) sensing in THz frequency band. Due to the adjustable plasmonic characteristics by changing the Fermi level(EF), the proposed structure has promising applications in the electro-optic modulations, optical interconnects, and optical switches.
基金The project was supported by the Foundation of Chinese Academy of Sciences.
文摘Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.
基金Project supported by the National Natural Science Foundation of China(Grant No.61271039)the Scientific Projects of Sichuan Province,China(Grant No.2015HH0016)the Natural Science Foundations of Zhejiang Province,China(Grant Nos.LQ12E02001 and Y107255)
文摘CoFe_2O_4 ferrite nanowire arrays are fabricated in porous silicon templates. The porous silicon templates are prepared via metal-assisted chemical etching with gold（Au） nanoparticles as the catalyst. Subsequently, CoFe_2O_4 ferrite nanowires are successfully synthesized into porous silicon templates by the sol–gel method. The magnetic hysteresis loop of nanowire array shows an isotropic feature of magnetic properties. The coercivity and squareness ratio（M_r/M_s） of ensemble nanowires are found to be 630 Oe（1 Oe = 79.5775 A·m^（-1） and 0.4 respectively. However, the first-order reversal curve（FORC） is adopted to reveal the probability density function of local magnetostatic properties（i.e., interwire interaction field and coercivity）. The FORC diagram shows an obvious distribution feature for interaction field and coercivity. The local coercivity with a value of about 1000 Oe is found to have the highest probability.
文摘Mechanical properties of micro-structured porous silicon film （PS） were studied combining X-ray diffraction with micro-Raman spectroscopy. The micro-structured porous silicon samples with different porosities ranging from 30.7700 to 96.2500 were obtained by chemical etching. Lattice parameters of the samples were measured using X-ray diffraction and its maximal change is up to （1.000.） This lattice mismatch with the bulk silicon substrate may introduce residual stress to the porous film. The residual stress measurement by micro-Raman spectroscopy reveals that the maximum of tensile residual stress has reached GPa level in the porous film. Moreover, the lattice mismatch and its corresponding residual stress are increasing with the porosity of PS, but average （elastic） modulus is about 14.5 GPa, one order of magnitude lower than that of substrate Si. The mechanical properties of PS have a close relation with its micro-pore structure.
基金National Natural Science Foundation of China(60067001) West Glory Project of Chinese Academy of Science(2003XJDX) +1 种基金Excellent Youth Scholar Award Foundation of Xinjiang(XJEDU2004E02)
文摘Two-layer structure consisting of PS/PMMA-DR1 composite film planar waveguide layer on porous silicon cladding layer was fabricated in our experiment. The induced grating based on the third nonlinear optical properties was formed by interaction of two Nd∶YAG laser beams at 1064nm in the porous silicon/PMMA-DR1 waveguide. The diffraction efficiency of the first order diffracted light is measured to be about 0.2% of the total output.
文摘The fabrication of the oxidized porous silicon waveguide prism is reported by selectively electrochemical anodisation process. The direction changes of light beams in TE and TM polarization out of this waveguide prism were respectively measured,and the experimental results were analyzed.
