Au/Zn O/n-type Si device is obtained using atomic layer deposition（ALD） for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state（Nss）, barrier height（Φb）, series res...Au/Zn O/n-type Si device is obtained using atomic layer deposition（ALD） for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state（Nss）, barrier height（Φb）, series resistance（Rs）, donor concentration（Nd）, and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current（DC） bias voltages in a range from-2 V to ＋2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant（ε＂）, dielectric loss（ε＂）, loss tangent（tan δ）, the real and imaginary parts of electric modulus（M and M）, and alternating current（AC） electrical conductivity（σ） are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.展开更多
Although the single-particle model enhanced with electrolyte dynamics(SPMe)is simplified from the pseudo-twodimensional(P2D)electrochemical model for lithium-ion batteries,it is difficult to solve the partial differen...Although the single-particle model enhanced with electrolyte dynamics(SPMe)is simplified from the pseudo-twodimensional(P2D)electrochemical model for lithium-ion batteries,it is difficult to solve the partial differential equations of solid–liquid phases in real-time applications.Moreover,working temperatures have a heavy impact on the battery behavior.Hence,a thermal-coupling SPMe is constructed.Herein,a lumped thermal model is established to estimate battery temperatures.The order of the SPMe model is reduced by using both transfer functions and truncation techniques and merged with Arrhenius equations for thermal effects.The polarization voltage drop is then modified through the use of test data because its original model is unreliable theoretically.Finally,the coupling-model parameters are extracted using genetic algorithms.Experimental results demonstrate that the proposed model produces average errors of about 42 mV under 15 constant current conditions and 15 mV under nine dynamic conditions,respectively.This new electrochemicalthermal coupling model is reliable and expected to be used for onboard applications.展开更多
Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception.They hold great promise in neuromorphic visual systems(NVs).This study introduces the amorphous wide-bandgap Ga_(2)O...Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception.They hold great promise in neuromorphic visual systems(NVs).This study introduces the amorphous wide-bandgap Ga_(2)O_(3)photoelectric synaptic memristor,which achieves 3-bit data storage through the adjustment of current compliance(Icc)and the utilization of variable ultraviolet(UV-254 nm)light intensities.The“AND”and“OR”logic gates in memristor-aided logic(MAGIC)are implemented by utilizing voltage polarity and UV light as input signals.The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation(PPF),spike-intensity dependent plasticity(SIDP),spike-number dependent plasticity(SNDP),spike-time dependent plasticity(STDP),spike-frequency dependent plasticity(SFDP)and the learning experience behavior.Finally,when integrated into an artificial neural network(ANN),the Ag/Ga_(2)O_(3)/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy(90.7%).The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage,neuromorphic computing,and artificial visual perception applications.展开更多
For the three-dimensional conductive host,the uneven lithium deposition and the dependence on the pore structure and lithiophility are a great challenge for lithium metal anodes.Herein,we employed facial chemical etch...For the three-dimensional conductive host,the uneven lithium deposition and the dependence on the pore structure and lithiophility are a great challenge for lithium metal anodes.Herein,we employed facial chemical etching techniques on brass foil to fabricate three-dimensional copper hosts with diverse pore structures and lithiophilities,thus intending to understand the lithium depositing mechanisms in porous hosts.The copper host with a more pronounced pore structure exhibits the lower polarization voltage induced by its large specific surface area,which reduces the local current density and provides a great deal of pathway for lithium ion diffusion.Meanwhile,it exhibits high nucleation overpotential and a short lifespan due to a reduced number of favorable lithium nucleation sites caused by the reduced lithiophilic zinc sites and a marked increase in the routes between nucleation sites.Therefore,the appropriate pore structure needs a consideration of efficient balance between the nucleation overpotential,the polarization voltage,and Coulombic efficiency.This insight underscores the pivotal role of well-suited pore structures in three-dimensional hosts,providing profound guidance for the efficient design of advanced host for lithium metal anode.展开更多
文摘Au/Zn O/n-type Si device is obtained using atomic layer deposition（ALD） for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state（Nss）, barrier height（Φb）, series resistance（Rs）, donor concentration（Nd）, and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current（DC） bias voltages in a range from-2 V to ＋2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant（ε＂）, dielectric loss（ε＂）, loss tangent（tan δ）, the real and imaginary parts of electric modulus（M and M）, and alternating current（AC） electrical conductivity（σ） are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.
基金the financial support from the National Key Research and Development Program of China(Grant No.2021YFF0601101)。
文摘Although the single-particle model enhanced with electrolyte dynamics(SPMe)is simplified from the pseudo-twodimensional(P2D)electrochemical model for lithium-ion batteries,it is difficult to solve the partial differential equations of solid–liquid phases in real-time applications.Moreover,working temperatures have a heavy impact on the battery behavior.Hence,a thermal-coupling SPMe is constructed.Herein,a lumped thermal model is established to estimate battery temperatures.The order of the SPMe model is reduced by using both transfer functions and truncation techniques and merged with Arrhenius equations for thermal effects.The polarization voltage drop is then modified through the use of test data because its original model is unreliable theoretically.Finally,the coupling-model parameters are extracted using genetic algorithms.Experimental results demonstrate that the proposed model produces average errors of about 42 mV under 15 constant current conditions and 15 mV under nine dynamic conditions,respectively.This new electrochemicalthermal coupling model is reliable and expected to be used for onboard applications.
基金supported by National Key Research and Development Program of China(Grant 2021YFA0715600,2021YFA0717700,2018YFB2202900)the National Natural Science Foundation of China(52192610,62274127,62374128,62304167)+7 种基金2023 Qinchuangyuan Construction Two Chain Integration Special Project(23LLRH0043)Key Research and Development Program of Shaanxi Province(Grant 2024GXYBXM-512)CAS Project for Young Scientists in Basic Research(YSBR-113)the open fund of State Key Laboratory of Infrared Physics(SITP-NLIST-ZD-2023-03)the open research fund of Songshan Lake Materials Laboratory(2023SLABFN02)the Wuhu and Xidian University special fund for industryuniversity-research cooperation(XWYCXY-012021004)China Postdoctoral Science Foundation(2023TQ0255)the Fundamental Research Funds for the Central Universities and the Innovation Fund of Xidian University.
文摘Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception.They hold great promise in neuromorphic visual systems(NVs).This study introduces the amorphous wide-bandgap Ga_(2)O_(3)photoelectric synaptic memristor,which achieves 3-bit data storage through the adjustment of current compliance(Icc)and the utilization of variable ultraviolet(UV-254 nm)light intensities.The“AND”and“OR”logic gates in memristor-aided logic(MAGIC)are implemented by utilizing voltage polarity and UV light as input signals.The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation(PPF),spike-intensity dependent plasticity(SIDP),spike-number dependent plasticity(SNDP),spike-time dependent plasticity(STDP),spike-frequency dependent plasticity(SFDP)and the learning experience behavior.Finally,when integrated into an artificial neural network(ANN),the Ag/Ga_(2)O_(3)/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy(90.7%).The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage,neuromorphic computing,and artificial visual perception applications.
基金funded by the National Natural Science Foundation of China(92372111,22179070,and 22379072)the Natural Science Foundation of Jiangsu Province(BK20220073)the Fundamental Research Funds for the Central Universities(RF1028623157).
文摘For the three-dimensional conductive host,the uneven lithium deposition and the dependence on the pore structure and lithiophility are a great challenge for lithium metal anodes.Herein,we employed facial chemical etching techniques on brass foil to fabricate three-dimensional copper hosts with diverse pore structures and lithiophilities,thus intending to understand the lithium depositing mechanisms in porous hosts.The copper host with a more pronounced pore structure exhibits the lower polarization voltage induced by its large specific surface area,which reduces the local current density and provides a great deal of pathway for lithium ion diffusion.Meanwhile,it exhibits high nucleation overpotential and a short lifespan due to a reduced number of favorable lithium nucleation sites caused by the reduced lithiophilic zinc sites and a marked increase in the routes between nucleation sites.Therefore,the appropriate pore structure needs a consideration of efficient balance between the nucleation overpotential,the polarization voltage,and Coulombic efficiency.This insight underscores the pivotal role of well-suited pore structures in three-dimensional hosts,providing profound guidance for the efficient design of advanced host for lithium metal anode.
