This paper describes shaking table tests of a 1：12 scale model of a special concentrically braced steel frame with pinned connections, which was fabricated according to a one-bay braced frame selected from a typical ...This paper describes shaking table tests of a 1：12 scale model of a special concentrically braced steel frame with pinned connections, which was fabricated according to a one-bay braced frame selected from a typical main factory building of a large thermal power plant. In order to investigate the seismic performance of this type of structure, several ground motion accelerations with different levels for seismic intensity Ⅷ, based on the Chinese Code for Seismic Design of Buildings, were selected to excite the model. The results show that the design methods of the members and the connections are adequate and that the structural system will perform well in regions of high seismicity. In addition to the tests, numerical simulations were also conducted and the results showed good agreement with the test results. Thus, the numerical model is shown to be accurate and the beam element can be used to model this structural system.展开更多
A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junction...A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junctions.The transient current equation of the two junctions is calculated by the current-voltage formula of the p-n junction,and the photoresponse curve of the PPD is calculated and drawn by the numerical solution.Simulation results show that the dynamic model successfully restores the entire process of the electron accumulation in the PPD.The difference between the full well capacity(FWC)values which were calculated by the proposed model and the simulation results is less than 5%,which is much smaller than the error of 40%for the traditional model.展开更多
A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping dist...A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.展开更多
This paper presents a low-power high-quality CMOS image sensor(CIS)using 1.5 V 4T pinned photodiode(4T-PPD)and dual correlated double sampling(dual-CDS)column-parallel single-slope ADC.A five-finger shaped pixel layer...This paper presents a low-power high-quality CMOS image sensor(CIS)using 1.5 V 4T pinned photodiode(4T-PPD)and dual correlated double sampling(dual-CDS)column-parallel single-slope ADC.A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD.Dual-CDS is used to reduce random noise and the nonuniformity between columns.Dual-mode counting method is proposed to improve circuit robustness.A prototype sensor was fabricated using a 0.11μm CMOS process.Measurement results show that the lag of the five-finger shaped pixel is reduced by 80%compared with the conventional rectangular pixel,the chip power consumption is only 36 mW,the dynamic range is 67.3 dB,the random noise is only 1.55 e^(-)_(rms),and the figure-of-merit is only 1.98 e^(-)·nJ,thus realizing low-power and high-quality imaging.展开更多
The observations of long-lived surface nanobubbles in various experiments have presented a theoretical challenge, as they were supposed to be dissolved in microseconds owing to the high Laplace pressure. However, an i...The observations of long-lived surface nanobubbles in various experiments have presented a theoretical challenge, as they were supposed to be dissolved in microseconds owing to the high Laplace pressure. However, an increasing number of studies suggest that contact line pinning, together with certain levels of oversaturation, is responsible for the anomalous stability of surface nanobubbles. This mechanism can interpret most characteristics of surface nanobubbles. Here, we summarize recent theoretical and computational work to explain how the surface nanobubbles become stable with contact line pinning. Other related work devoted to understanding the unusual behaviors of pinned surface nanobubbles is also reviewed here.展开更多
Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due ...Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems.展开更多
The pinning of quantized magnetic vortices in superconducting YBa_(2)Cu_(3)O_(7-δ)(YBCO or Y123)thin films with Y_(2)BaCuO_(5)(Y211)nanoinclusions have been investigated over wide temperature range(4.2-77 K).The conc...The pinning of quantized magnetic vortices in superconducting YBa_(2)Cu_(3)O_(7-δ)(YBCO or Y123)thin films with Y_(2)BaCuO_(5)(Y211)nanoinclusions have been investigated over wide temperature range(4.2-77 K).The concentration of Y211 nanoinclusions has been systematically varied inside YBCO thin films prepared by laser ablation technique using surface modified target approach.Large pinning force density values(Fp∼0.5 TNm^(−3)at 4.2 K,9 T)have been observed for the YBCO film with moderate concentration of Y211 nanoinclusions(3.6 area%on ablation target).In addition,uniform enhancement in critical current density(J_(c))was observed in the angular dependent J_(c)measurement of YBCO+Y211 nanocomposite films.Y211 nanoinclusions have been found to be very efficient in pinning the quantized vortices thereby enhancing the in‐field J_(c)values over a wide range of temperature.Increasing the concentration of Y211 secondary phase into Y123 film matrix results into agglomeration of Y211 phase and observed as increased Y211 nanoparticle size.These larger secondary phase nanoparticles are not as efficient pinning centers at lower temperatures as they are at higher temperatures due to substantial reduction of the coherence length at lower temperatures.Investigation of the temperature dependence of J_(c)for YBCO+Y211 nanocomposite films has been conducted and possible vortex pinning mechanism in these nanocomposite films has been discussed.展开更多
A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the...A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the impurity compensation formed by manufacturing processes; the impurity distribution characteristics of two boundary PN junctions located in the region for particular spectrum response of a pinned photodiode are quantitative analyzed. By solving Poisson＇s equation in vertical barrier regions, the relationships between the pinch-off voltage and the corresponding process parameters such as peak doping concentration, N type width and doping concentration gradient of the N buried layer are established. Test results have shown that the derived model features the variations of the pinch-off voltage versus the process implant conditions more accurately than the traditional model. The research conclusions in this paper provide theoretical evidence for evaluating the pinch-off voltage design.展开更多
The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardl...The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was pertbrmed in detail on the principle of the proposed method. Application of the measurements oil a prototype PPD-CIS chip with an array of 160 ×160 pixels is demonstrated. Such a method intends to shine new light oil the guidance for the lag-free and high-speed sensors optimization based on PPD devices.展开更多
基金Northeast Electric Power Design Institute of China Under Grant No.K07-T716
文摘This paper describes shaking table tests of a 1：12 scale model of a special concentrically braced steel frame with pinned connections, which was fabricated according to a one-bay braced frame selected from a typical main factory building of a large thermal power plant. In order to investigate the seismic performance of this type of structure, several ground motion accelerations with different levels for seismic intensity Ⅷ, based on the Chinese Code for Seismic Design of Buildings, were selected to excite the model. The results show that the design methods of the members and the connections are adequate and that the structural system will perform well in regions of high seismicity. In addition to the tests, numerical simulations were also conducted and the results showed good agreement with the test results. Thus, the numerical model is shown to be accurate and the beam element can be used to model this structural system.
基金supported by the National Key R&D Program of China(No.2019YFB2204301)。
文摘A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junctions.The transient current equation of the two junctions is calculated by the current-voltage formula of the p-n junction,and the photoresponse curve of the PPD is calculated and drawn by the numerical solution.Simulation results show that the dynamic model successfully restores the entire process of the electron accumulation in the PPD.The difference between the full well capacity(FWC)values which were calculated by the proposed model and the simulation results is less than 5%,which is much smaller than the error of 40%for the traditional model.
基金Project supported by the National Defense Pre-Research Foundation of China(Grant No.51311050301095)
文摘A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.
基金supported by the National Key R&D Program of China(2019YFB2204304).
文摘This paper presents a low-power high-quality CMOS image sensor(CIS)using 1.5 V 4T pinned photodiode(4T-PPD)and dual correlated double sampling(dual-CDS)column-parallel single-slope ADC.A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD.Dual-CDS is used to reduce random noise and the nonuniformity between columns.Dual-mode counting method is proposed to improve circuit robustness.A prototype sensor was fabricated using a 0.11μm CMOS process.Measurement results show that the lag of the five-finger shaped pixel is reduced by 80%compared with the conventional rectangular pixel,the chip power consumption is only 36 mW,the dynamic range is 67.3 dB,the random noise is only 1.55 e^(-)_(rms),and the figure-of-merit is only 1.98 e^(-)·nJ,thus realizing low-power and high-quality imaging.
基金Project supported by the National Natural Science Foundation of China(Grant No.91434204)
文摘The observations of long-lived surface nanobubbles in various experiments have presented a theoretical challenge, as they were supposed to be dissolved in microseconds owing to the high Laplace pressure. However, an increasing number of studies suggest that contact line pinning, together with certain levels of oversaturation, is responsible for the anomalous stability of surface nanobubbles. This mechanism can interpret most characteristics of surface nanobubbles. Here, we summarize recent theoretical and computational work to explain how the surface nanobubbles become stable with contact line pinning. Other related work devoted to understanding the unusual behaviors of pinned surface nanobubbles is also reviewed here.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0201102)the National Natural Science Foundation of China(Grant No.51571208)+3 种基金the Instrument Developing Project of Chinese Academy of Sciences(Grant No.YZ201536)the Program for Key Science and Technology Innovation Team of Zhejiang Province,China(Grant No.2013TD08)the K C Wong Education Foundation(Grant No.rczx0800)the K C Wong Magna Fund in Ningbo University
文摘Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems.
基金supported by the ALCA project of Japan Science and Technology Agency.
文摘The pinning of quantized magnetic vortices in superconducting YBa_(2)Cu_(3)O_(7-δ)(YBCO or Y123)thin films with Y_(2)BaCuO_(5)(Y211)nanoinclusions have been investigated over wide temperature range(4.2-77 K).The concentration of Y211 nanoinclusions has been systematically varied inside YBCO thin films prepared by laser ablation technique using surface modified target approach.Large pinning force density values(Fp∼0.5 TNm^(−3)at 4.2 K,9 T)have been observed for the YBCO film with moderate concentration of Y211 nanoinclusions(3.6 area%on ablation target).In addition,uniform enhancement in critical current density(J_(c))was observed in the angular dependent J_(c)measurement of YBCO+Y211 nanocomposite films.Y211 nanoinclusions have been found to be very efficient in pinning the quantized vortices thereby enhancing the in‐field J_(c)values over a wide range of temperature.Increasing the concentration of Y211 secondary phase into Y123 film matrix results into agglomeration of Y211 phase and observed as increased Y211 nanoparticle size.These larger secondary phase nanoparticles are not as efficient pinning centers at lower temperatures as they are at higher temperatures due to substantial reduction of the coherence length at lower temperatures.Investigation of the temperature dependence of J_(c)for YBCO+Y211 nanocomposite films has been conducted and possible vortex pinning mechanism in these nanocomposite films has been discussed.
文摘A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the impurity compensation formed by manufacturing processes; the impurity distribution characteristics of two boundary PN junctions located in the region for particular spectrum response of a pinned photodiode are quantitative analyzed. By solving Poisson＇s equation in vertical barrier regions, the relationships between the pinch-off voltage and the corresponding process parameters such as peak doping concentration, N type width and doping concentration gradient of the N buried layer are established. Test results have shown that the derived model features the variations of the pinch-off voltage versus the process implant conditions more accurately than the traditional model. The research conclusions in this paper provide theoretical evidence for evaluating the pinch-off voltage design.
基金Project supported by the National Defense Pre-Research Foundation of China(No.51311050301095)
文摘The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was pertbrmed in detail on the principle of the proposed method. Application of the measurements oil a prototype PPD-CIS chip with an array of 160 ×160 pixels is demonstrated. Such a method intends to shine new light oil the guidance for the lag-free and high-speed sensors optimization based on PPD devices.
