We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector(QWP)device with a peak response frequency of 4.3 THz.The negative differential resistance(NDR)phenomenon is found in the dark currentvolta...We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector(QWP)device with a peak response frequency of 4.3 THz.The negative differential resistance(NDR)phenomenon is found in the dark currentvoltage(I-V)curve in the current sweeping measurement mode,from which the breakdown voltage is determined.The photocurrent spectra and blackbody current responsivities at different voltages are measured.Based on the experimental data,the peak responsivity of 0.3 A/W(at 0.15 V,8 K)is derived,and the detection sensitivity is higher than 10^(11)Jones,which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers.We attribute the high detection performance of the device to the small ohmic contact resistance of-2Ωand the big breakdown bias.展开更多
Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quas...Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quasi-one-dimensional PdBr_(2) by using combined measurements of the angle-resolved polarized Raman spectroscopy(ARPRS) and anisotropic optical absorption spectrum. The analyses of ARPRS data validate the anisotropic Raman properties of the PdBr_(2) flake.And anisotropic optical absorption spectrum of PdBr_(2) nanoflake demonstrates distinct optical linear dichroism reversal. Photodetector constructed by PdBr_(2) nanowire exhibits high responsivity of 747 A·W^(-1) and specific detectivity of 5.8×10^(12) Jones. And the photodetector demonstrates prominent polarization-sensitive photoresponsivity under 405-nm light irradiation with large photocurrent anisotropy ratio of 1.56, which is superior to those of most of previously reported quasi-one-dimensional counterparts. Our study offers fundamental insights into the strong optical anisotropy exhibited by PdBr_(2), establishing it as a promising candidate for miniaturization and integration trends of polarization-related applications.展开更多
Charge manipulation is crucial in optoelectronic devices.The unoptimized interfacial charge injection/extraction in solution-processed bulkheterojunction(BHJ)organic photodetectors(OPDs)presents significant challenges...Charge manipulation is crucial in optoelectronic devices.The unoptimized interfacial charge injection/extraction in solution-processed bulkheterojunction(BHJ)organic photodetectors(OPDs)presents significant challenges in achieving high detectivity and fast response speed.Here,we first develop an approach for intrinsic charge manipulation induced by molecularly engineered donors to block electron injection and facilitate hole extraction between the indium tin oxide(ITO)transparent anode and the photoactive layer.By utilizing a polymer donor with 3,4-ethylenedioxythiophene(EDOT)as the conjugated side chain,a polymer-rich layer forms spontaneously on the ITO substrate due to the increased oxygen interactions between ITO and EDOT.This results in electron-blocking-layer(EBL)-free devices with lower dark current and noise without a reduction in responsivity compared to control devices.As a result,the EBL-free devices exhibit a peak specific detectivity of 2.36×10^(13) Jones at 950 nm and achieve a-3 dB bandwidth of 30 MHz under-1 V.Enhanced stability is also observed compared to the devices with poly(3,4-ethylenedioxythiophene)polystyrene sulfonate(PEDOT:PSS).This work demonstrates a new method to intrinsically manipulate charge injection in BHJ photoactive layers,enabling the fabrication of solution-processed EBL-free OPDs with high sensitivity,rapid response,and good stability.展开更多
This study pioneers a high-performance UV polarization-sensitive photodetector by ingeniously integrating noncentrosymmetric metal nanostructures into a graphene(Gr)/Al_(2)O_(3)/GaN heterojunction.Unlike conventional ...This study pioneers a high-performance UV polarization-sensitive photodetector by ingeniously integrating noncentrosymmetric metal nanostructures into a graphene(Gr)/Al_(2)O_(3)/GaN heterojunction.Unlike conventional approaches constrained by graphene's intrinsic isotropy or complex nanoscale patterning,our design introduces asymmetric metal architectures(E-/T-type) to artificially create directional anisotropy.These structures generate plasmon-enhanced localized electric fields that selectively amplify photogenerated carrier momentum under polarized UV light(325 nm),synergized with Fowler-Nordheim tunneling(FNT) across an atomically thin Al_(2)O_(3) barrier.The result is a breakthrough in performance:a record anisotropy ratio of 115.5(E-type,-2 V) and exceptional responsivity(97.7 A/W),surpassing existing graphene-based detectors by over an order of magnitude.Crucially,by systematically modulating metal geometry and density,we demonstrate a universal platform adaptable to diverse 2D/3D systems.This study provides a valuable reference for developing and practically applying photodetectors with higher anisotropy than ultraviolet polarization sensitivity.展开更多
Optical wireless(OW)communication systems face significant challenges such as signal attenuation due to atmospheric absorption,scattering,and noise from hardware components,which degrade detection sensitivity.To addre...Optical wireless(OW)communication systems face significant challenges such as signal attenuation due to atmospheric absorption,scattering,and noise from hardware components,which degrade detection sensitivity.To address these challenges,we propose a digital processing algorithm that combines finite impulse response filtering with dynamic synchronization based on pulse addition and subtraction.Unlike conventional methods,which typically rely solely on hardware optimization or basic thresholding techniques,the proposed approach integrates filtering and synchronization to improve weak signal detection and reduce noise-induced errors.The proposed algorithm was implemented and verified using a field-programmable gate array.Experiments conducted in an indoor OW communication environment demonstrate that the proposed algorithm significantly improves detection sensitivity by approximately 6 dB and 5 dB at communication rates of 3.5 Mbps and 5.0 Mbps,respectively.Specifically,under darkroom conditions and a bit error rate of 1×10^(-7),the detection sensitivity was improved from-38.56 dBm to-44.77 dBm at 3.5 Mbps and from-37.12 dBm to-42.29 dBm at 5 Mbps.The proposed algorithm is crucial for future capture and tracking of signals at large dispersion angles and in underwater and long-distance communication scenarios.展开更多
Au-MgO-ZnO （AMZ） ultraviolet （UV） photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors...Au-MgO-ZnO （AMZ） ultraviolet （UV） photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors were improved via the reduction of the dark current. Furthermore, strain modulation was used to enhance the sensitivities of the AMZ UV photodetectors. The sensitivities of the photodetectors were enhanced by the piezo-phototronic effect. However, there was a limiting value of the applied strains to enhance the sensitivity of the photodetector. When the external strains exceeded the limiting value, the sensitivity decreased because of the tunneling dark current. The external strains loaded on the photodetectors result in the degradation of the photodetectors, and an applied bias can accelerate the process. This work presents a prospective approach to engineer the performance of a UV photodetector. In addition, the study on the service behavior of the photodetectors may offer a strain range and theoretical support for safely using and studying metal-insulator-semiconductor （MIS） UV photodetectors.展开更多
High-performance solar-blind UV （ultraviolet） photodetectors （PDs） based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle stability, and the ability to operate in harsh environ...High-performance solar-blind UV （ultraviolet） photodetectors （PDs） based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle stability, and the ability to operate in harsh environments are critical for solar observations, space communication, UV astronomy, and missile tracking. In this study, TiO2-ZnTiO3 heterojunction nanowire-based PDs are successfully developed and used to detect solar-blind UV light. A photoconductive analysis indicates that the fabricated PDs are sensitive to UV illumination, with high sensitivity, good stability, and high reproducibility. Further analysis indicates that the rich existence of grain boundaries within the TiO2-ZnTiO3 nanowire can greatly decrease the dark current and recombination of the electron-hole pairs and thereby significantly increase the device＇s photosensitivity, spectra responsivity （1.1 ～ 106）, and external quantum efficiency （4.3 ～ 108 %）. Moreover, the PDs exhibit good photodetective performance with fast photoresponse and recovery and excellent thermal stability at temperatures as high as 175 ℃. According to these results, TiO2-ZnTiO3 heterojunction nanowires exhibit great potential for applications in high-performance optical electronics and PDs, particularly next-generation photodetectors with the ability to operate in harsh environments.展开更多
A new idea about indirect coupling photodetectors is proposed. The indirect coupling photodetectors with two different mechanisms have been found and analysed: Experimental results show that they are of a class of exc...A new idea about indirect coupling photodetectors is proposed. The indirect coupling photodetectors with two different mechanisms have been found and analysed: Experimental results show that they are of a class of excellent photodetectors. Finally, the application of such photodetectors and their research prospect are discussed.展开更多
Two-dimensional Bi_(2)O_(2)Se with unique crystal structure and ultrahigh carrier mobility has been catching widespread attention and demonstrated great potential in nanoelectronic and optoelectronic devices.The exist...Two-dimensional Bi_(2)O_(2)Se with unique crystal structure and ultrahigh carrier mobility has been catching widespread attention and demonstrated great potential in nanoelectronic and optoelectronic devices.The existence of lattice oxygen ensures its ultrahigh stability at ambient environment and make it promising for high-temperature applications.Here,through systematical characterizations,the high air stability of Bi_(2)O_(2)Se nanosheets at temperatures up to 250℃is evidently demonstrated.The fabricated photodetectors based on the as-grown Bi_(2)O_(2)Se nanosheets show high stability,high sensitivity(~5319 A/Wat 250℃with a bias of 1 V)and fast response(several milliseconds)from room temperature to 250℃.Besides,it was observed that the devices also show good photoresponse covering UV,visible and infrared regions at high temperatures.These results suggest their promising high-performance applications serving under harsh conditions.展开更多
Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias o...Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias or zero bias operation hinders their applications in advanced photodetection area.Here,a black phosphorus/rhodamine 6G/molybdenum disulfide(BP/R6G/MoS_(2))photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers.The formed vdWs interface achieves high performance photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules.The devices sensitized by the dye molecule R6G exhibit enhanced photodetection performance without sacrificing the photoresponse speed.Among them,the R increased by 14.8-20.4 times,and the specific detectivity(D^(*))increased by 24.9-34.4 times.The strategy based on interlayer assembly of dye molecules proposed here may pave a new way for realizing high-performance photodetection based on 2D vdWs heterojunctions with high responsivity and fast response speed.展开更多
在空间相干光通信中,为了对本振激光器和大气信道产生的共模噪声进行有效的抑制,接收机中广泛引入平衡探测器,通过分析可知,平衡探测器在相干探测时灵敏度明显提高。为了探求空间相干通信中平衡探测器的性能,对其噪声形成的机理进行了分...在空间相干光通信中,为了对本振激光器和大气信道产生的共模噪声进行有效的抑制,接收机中广泛引入平衡探测器,通过分析可知,平衡探测器在相干探测时灵敏度明显提高。为了探求空间相干通信中平衡探测器的性能,对其噪声形成的机理进行了分析,给出了2.5 Gbps和5 Gbps平衡探测器在非相干与相干探测条件下的灵敏度理论极限。设计了2.5 Gbps和5 Gbps平衡探测器,构建了平衡探测器测试系统,并对其灵敏度进行了测试,在2.5 Gbps通信速率下,非相干探测灵明度达到-21.1 d Bm,相干探测的灵敏度达到-41.2 d Bm,测试结果与理论分析值基本吻合。空间相干光通信中平衡探测器分析与设计为空间相干光通信系统提供了理论依据和实现条件。展开更多
基金Project supported by the National Key R&D Program of China(Grant No.2017YFF0106302)the National Basic Research Program of of China(Grant No.2014CB339803)+1 种基金the National Natural Science Foundation of China(Grant Nos.61404150,61405233,and 61604161)the Shanghai Municipal Commission of Science and Technology,China(Grant Nos.15JC1403800,17ZR1448300,and 17YF1429900)
文摘We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector(QWP)device with a peak response frequency of 4.3 THz.The negative differential resistance(NDR)phenomenon is found in the dark currentvoltage(I-V)curve in the current sweeping measurement mode,from which the breakdown voltage is determined.The photocurrent spectra and blackbody current responsivities at different voltages are measured.Based on the experimental data,the peak responsivity of 0.3 A/W(at 0.15 V,8 K)is derived,and the detection sensitivity is higher than 10^(11)Jones,which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers.We attribute the high detection performance of the device to the small ohmic contact resistance of-2Ωand the big breakdown bias.
基金Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403203 and 2021YFA1600201)the National Natural Science Foundation of China (Grant No. 12274414)the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures (Contract No. JZHKYPT-2021-08)。
文摘Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quasi-one-dimensional PdBr_(2) by using combined measurements of the angle-resolved polarized Raman spectroscopy(ARPRS) and anisotropic optical absorption spectrum. The analyses of ARPRS data validate the anisotropic Raman properties of the PdBr_(2) flake.And anisotropic optical absorption spectrum of PdBr_(2) nanoflake demonstrates distinct optical linear dichroism reversal. Photodetector constructed by PdBr_(2) nanowire exhibits high responsivity of 747 A·W^(-1) and specific detectivity of 5.8×10^(12) Jones. And the photodetector demonstrates prominent polarization-sensitive photoresponsivity under 405-nm light irradiation with large photocurrent anisotropy ratio of 1.56, which is superior to those of most of previously reported quasi-one-dimensional counterparts. Our study offers fundamental insights into the strong optical anisotropy exhibited by PdBr_(2), establishing it as a promising candidate for miniaturization and integration trends of polarization-related applications.
基金the Shenzhen Fundamental Research Funding(Key Program,No.JCYJ20200109141405950)Shenzhen Key Lab Funding(No.ZDSYS2015052915525382)+6 种基金the National Natural Science Foundation of China(No.51703092)the European Research Council for support under the European Union's Horizon 2020 Research and Innovation Program(Nos.742708 and 648901)support under Guangdong Provincial Natural Science Foundation General Project(No.2024A1515012318)Guangdong Basic and Applied Basic Research Foundation(No.2023A1515111140)Shenzhen government for support under the special appointed position-“Pengcheng Peacock Plan-C”The Chinese University of Hong Kong(Shenzhen)for support under The University Development Fund(No.UDF01003117)Special Funds for High-Level Universities-Talent Projects-“Presidential Young Fellow”(No.UF02003117).
文摘Charge manipulation is crucial in optoelectronic devices.The unoptimized interfacial charge injection/extraction in solution-processed bulkheterojunction(BHJ)organic photodetectors(OPDs)presents significant challenges in achieving high detectivity and fast response speed.Here,we first develop an approach for intrinsic charge manipulation induced by molecularly engineered donors to block electron injection and facilitate hole extraction between the indium tin oxide(ITO)transparent anode and the photoactive layer.By utilizing a polymer donor with 3,4-ethylenedioxythiophene(EDOT)as the conjugated side chain,a polymer-rich layer forms spontaneously on the ITO substrate due to the increased oxygen interactions between ITO and EDOT.This results in electron-blocking-layer(EBL)-free devices with lower dark current and noise without a reduction in responsivity compared to control devices.As a result,the EBL-free devices exhibit a peak specific detectivity of 2.36×10^(13) Jones at 950 nm and achieve a-3 dB bandwidth of 30 MHz under-1 V.Enhanced stability is also observed compared to the devices with poly(3,4-ethylenedioxythiophene)polystyrene sulfonate(PEDOT:PSS).This work demonstrates a new method to intrinsically manipulate charge injection in BHJ photoactive layers,enabling the fabrication of solution-processed EBL-free OPDs with high sensitivity,rapid response,and good stability.
基金National Natural Science Foundation of China(62375090, 62374062, 52002135)Natural Science Foundation of Guangdong Province of China(2023B1515120071)+2 种基金Science and Technology Program of Guangdong Province of China (2023A0505050131,2022A0505050066, 2024A1515011081)Characteristic Innovation Project of Universities in Guangdong Province(2023KTSCX028)Science and Technology Program of Guangzhou,China (2024A04J6456)
文摘This study pioneers a high-performance UV polarization-sensitive photodetector by ingeniously integrating noncentrosymmetric metal nanostructures into a graphene(Gr)/Al_(2)O_(3)/GaN heterojunction.Unlike conventional approaches constrained by graphene's intrinsic isotropy or complex nanoscale patterning,our design introduces asymmetric metal architectures(E-/T-type) to artificially create directional anisotropy.These structures generate plasmon-enhanced localized electric fields that selectively amplify photogenerated carrier momentum under polarized UV light(325 nm),synergized with Fowler-Nordheim tunneling(FNT) across an atomically thin Al_(2)O_(3) barrier.The result is a breakthrough in performance:a record anisotropy ratio of 115.5(E-type,-2 V) and exceptional responsivity(97.7 A/W),surpassing existing graphene-based detectors by over an order of magnitude.Crucially,by systematically modulating metal geometry and density,we demonstrate a universal platform adaptable to diverse 2D/3D systems.This study provides a valuable reference for developing and practically applying photodetectors with higher anisotropy than ultraviolet polarization sensitivity.
基金supported by National Key R&D Program of China under Grants No.2022YFB3902500,No.2022YFB2903402,and No.2021YFA0718804Natural Science Foundation of Jilin Province under Grant No.222621JC010297013Education Department of Jilin Province under Grant No.JJKH20220745KJ.
文摘Optical wireless(OW)communication systems face significant challenges such as signal attenuation due to atmospheric absorption,scattering,and noise from hardware components,which degrade detection sensitivity.To address these challenges,we propose a digital processing algorithm that combines finite impulse response filtering with dynamic synchronization based on pulse addition and subtraction.Unlike conventional methods,which typically rely solely on hardware optimization or basic thresholding techniques,the proposed approach integrates filtering and synchronization to improve weak signal detection and reduce noise-induced errors.The proposed algorithm was implemented and verified using a field-programmable gate array.Experiments conducted in an indoor OW communication environment demonstrate that the proposed algorithm significantly improves detection sensitivity by approximately 6 dB and 5 dB at communication rates of 3.5 Mbps and 5.0 Mbps,respectively.Specifically,under darkroom conditions and a bit error rate of 1×10^(-7),the detection sensitivity was improved from-38.56 dBm to-44.77 dBm at 3.5 Mbps and from-37.12 dBm to-42.29 dBm at 5 Mbps.The proposed algorithm is crucial for future capture and tracking of signals at large dispersion angles and in underwater and long-distance communication scenarios.
文摘Au-MgO-ZnO （AMZ） ultraviolet （UV） photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors were improved via the reduction of the dark current. Furthermore, strain modulation was used to enhance the sensitivities of the AMZ UV photodetectors. The sensitivities of the photodetectors were enhanced by the piezo-phototronic effect. However, there was a limiting value of the applied strains to enhance the sensitivity of the photodetector. When the external strains exceeded the limiting value, the sensitivity decreased because of the tunneling dark current. The external strains loaded on the photodetectors result in the degradation of the photodetectors, and an applied bias can accelerate the process. This work presents a prospective approach to engineer the performance of a UV photodetector. In addition, the study on the service behavior of the photodetectors may offer a strain range and theoretical support for safely using and studying metal-insulator-semiconductor （MIS） UV photodetectors.
文摘High-performance solar-blind UV （ultraviolet） photodetectors （PDs） based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle stability, and the ability to operate in harsh environments are critical for solar observations, space communication, UV astronomy, and missile tracking. In this study, TiO2-ZnTiO3 heterojunction nanowire-based PDs are successfully developed and used to detect solar-blind UV light. A photoconductive analysis indicates that the fabricated PDs are sensitive to UV illumination, with high sensitivity, good stability, and high reproducibility. Further analysis indicates that the rich existence of grain boundaries within the TiO2-ZnTiO3 nanowire can greatly decrease the dark current and recombination of the electron-hole pairs and thereby significantly increase the device＇s photosensitivity, spectra responsivity （1.1 ～ 106）, and external quantum efficiency （4.3 ～ 108 %）. Moreover, the PDs exhibit good photodetective performance with fast photoresponse and recovery and excellent thermal stability at temperatures as high as 175 ℃. According to these results, TiO2-ZnTiO3 heterojunction nanowires exhibit great potential for applications in high-performance optical electronics and PDs, particularly next-generation photodetectors with the ability to operate in harsh environments.
文摘A new idea about indirect coupling photodetectors is proposed. The indirect coupling photodetectors with two different mechanisms have been found and analysed: Experimental results show that they are of a class of excellent photodetectors. Finally, the application of such photodetectors and their research prospect are discussed.
基金supported by the National Natural Science Foundation of China(Nos.91963210,52122206)Key Research Program of Guangdong Province(No.2020B0101690001).
文摘Two-dimensional Bi_(2)O_(2)Se with unique crystal structure and ultrahigh carrier mobility has been catching widespread attention and demonstrated great potential in nanoelectronic and optoelectronic devices.The existence of lattice oxygen ensures its ultrahigh stability at ambient environment and make it promising for high-temperature applications.Here,through systematical characterizations,the high air stability of Bi_(2)O_(2)Se nanosheets at temperatures up to 250℃is evidently demonstrated.The fabricated photodetectors based on the as-grown Bi_(2)O_(2)Se nanosheets show high stability,high sensitivity(~5319 A/Wat 250℃with a bias of 1 V)and fast response(several milliseconds)from room temperature to 250℃.Besides,it was observed that the devices also show good photoresponse covering UV,visible and infrared regions at high temperatures.These results suggest their promising high-performance applications serving under harsh conditions.
基金This work was supported by National Key Research and Development Project(No.2019YFB2203503)the National Natural Science Foundation of China(No.62105211)+8 种基金China Postdoctoral Science Foundation(Nos.2021M702242 and 2022T150431)Natural Science Foundation of Guangdong Province(Nos.2018B030306038 and 2020A1515110373)Guangdong Basic and Applied Basic Research Foundation(No.2022A1515010649)Science and Technology Projects in Guangzhou(No.202201000002)Science and Technology Innovation Commission of Shenzhen(Nos.JCYJ20180507182047316,20200805132016001,and JCYJ20200109105608771)Natural Science Foundation of Jilin Province(No.YDZJ202201ZYTS429)NTUT-SZU Joint Research Program(No.2021008)Authors acknowledge support and funding of King Khalid University through Research Center for Advanced Materials Science(RCAMS)(No.RCAMS/KKU/0010/21)The authors also acknowledge the Photonics Center of Shenzhen University for technical support.
文摘Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias or zero bias operation hinders their applications in advanced photodetection area.Here,a black phosphorus/rhodamine 6G/molybdenum disulfide(BP/R6G/MoS_(2))photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers.The formed vdWs interface achieves high performance photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules.The devices sensitized by the dye molecule R6G exhibit enhanced photodetection performance without sacrificing the photoresponse speed.Among them,the R increased by 14.8-20.4 times,and the specific detectivity(D^(*))increased by 24.9-34.4 times.The strategy based on interlayer assembly of dye molecules proposed here may pave a new way for realizing high-performance photodetection based on 2D vdWs heterojunctions with high responsivity and fast response speed.
文摘在空间相干光通信中,为了对本振激光器和大气信道产生的共模噪声进行有效的抑制,接收机中广泛引入平衡探测器,通过分析可知,平衡探测器在相干探测时灵敏度明显提高。为了探求空间相干通信中平衡探测器的性能,对其噪声形成的机理进行了分析,给出了2.5 Gbps和5 Gbps平衡探测器在非相干与相干探测条件下的灵敏度理论极限。设计了2.5 Gbps和5 Gbps平衡探测器,构建了平衡探测器测试系统,并对其灵敏度进行了测试,在2.5 Gbps通信速率下,非相干探测灵明度达到-21.1 d Bm,相干探测的灵敏度达到-41.2 d Bm,测试结果与理论分析值基本吻合。空间相干光通信中平衡探测器分析与设计为空间相干光通信系统提供了理论依据和实现条件。
