With high surface-to-volume ratio,the abundant surface states and high carrier concentration are challenging the nearinfrared photodetection behaviors of narrow band gap semiconductors nanowires.In this study,the narr...With high surface-to-volume ratio,the abundant surface states and high carrier concentration are challenging the nearinfrared photodetection behaviors of narrow band gap semiconductors nanowires.In this study,the narrow band gap semiconductor of Bi_(2)O_(2)Se nanosheets(NSs)is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires(NWs)for demonstrating the impressive self-powered NIR photodetection.Benefiting from the built-in electric field of~140 meV,the as-constructed NW/NS mixeddimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA,high I_(light)/I_(dark)ratio of 82 and fast response times of<2/2 ms at room temperature.The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique.The excellent photodetection performance promises the asconstructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.展开更多
Two-dimensional perovskite ferroelectric which strongly couple ferroelectricity with semiconducting properties are promising candidates for optoelectronic applications.However,it is still a great challenge to fabricat...Two-dimensional perovskite ferroelectric which strongly couple ferroelectricity with semiconducting properties are promising candidates for optoelectronic applications.However,it is still a great challenge to fabricate self-powered broadband photodetectors with low detection limit.Herein,we successfully realized self-powered broadband photodetection with low detection limit by using a trilayered perovskite ferroelectric(BA)_(2)EA_(2)Pb_(3)I_(10)(1,BA=n-butylamine,EA=ethylamine).Giving to its large spontaneous polarization(5.6μC/cm^(2)),1 exhibits an open-circuit voltage of 0.25 V which provide driving force to separate carriers.Combining with its low dark current(~10^(-14)A)and narrow bandgap(Eg=1.86 e V),1 demonstrates great potential on detecting the broadband weak lights.Thus,a prominent photodetection performance with high open-off ratio(~10^(5)),outstanding responsivity(>10 m A/W),and promising detectivity(>1011Jones),as well as the low detecting limit(~nW/cm^(2))among the wide wavelength from 377 nm to637 nm was realized based on the single crystal of 1.This work demonstrates the great potential of 2D perovskite ferroelectric on self-powered broadband photodetectors.展开更多
Dion-Jacobson (DJ) phase hybrid perovskites have been proven to improve the photovoltaic performance of the devices due to its unique structure.At present,some DJ hybrid perovskites have been reported and used for pho...Dion-Jacobson (DJ) phase hybrid perovskites have been proven to improve the photovoltaic performance of the devices due to its unique structure.At present,some DJ hybrid perovskites have been reported and used for photodetection filed,but most of them are based on lead-bromide systems,which is not conducive to construct broadband photodetection devices due to the limitation of intrinsic absorption.Herein,we constructed a bilayered DJ hybrid perovskite (3AMPY)(EA)Pb_(2)I_(7)(3AMPY^(2+)is 3-(aminomethyl)pyridinium,EA^(+)is ethylammonium) using an aromatic spacer,which exhibit large current on/off ratios of 10~4under 520 and 637 nm illumination.In particular,the single crystal device based on (3AMPY)(EA)Pb_(2)I_(7)shows a distinguished detectivity of 7.4×10^(12)Jones and a high responsivity of 0.89A/W under 637 nm illumination.Such finding not only enriches the quantities of DJ hybrid perovskites,but also provides useful assistance for constructing high-performance optoelectronic device in the future.展开更多
Polar semiconductors,particularly the emerging polar two-dimensional(2D)halide perovskites,have motivated immense interest in diverse photoelectronic devices due to their distinguishing polarizationgenerated photoelec...Polar semiconductors,particularly the emerging polar two-dimensional(2D)halide perovskites,have motivated immense interest in diverse photoelectronic devices due to their distinguishing polarizationgenerated photoelectric effects.However,the constraints on the organic cation's choice are still subject to limitations of polar 2D halide perovskites due to the size of the inorganic pocket between adjacent corner-sharing octahedra.Herein,a mixed spacer cation ordering strategy is employed to assemble a polar 2D halide perovskite NMAMAPb Br_(4)(NMPB,NMA is N-methylbenzene ammonium,MA is methylammonium)with alternating cation in the interlayer space.Driven by the incorporation of a second MA cation,the perovskite layer transformed from a 2D Pb_(7)Br_(24)anionic network with corner-and face-sharing octahedra to a flat 2D PbBr_(4)perovskite networks only with corner-sharing octahedra.In the crystal structure of NMPB,the asymmetric hydrogen-bonding interactions between ordered mixed-spacer cations and 2D perovskite layers give rise to a second harmonic generation response and a large polarization of 1.3μC/cm^(2).More intriguingly,the ordered 2D perovskite networks endow NMPB with excellent self-powered polarization-sensitive detection performance,showing a considerable polarization-related dichroism ratio up to 1.87.The reconstruction of an inorganic framework within a crystal through mixed cation ordering offers a new synthetic tool for templating perovskite lattices with controlled properties,overcoming limitations of conventional cation choice.展开更多
Non-layered two-dimensional(2D) lead-free all-inorganic perovskites nanoplates have recently attracted considerable attention in photodetectors;however, the indepth investigation of thickness on photodetection perform...Non-layered two-dimensional(2D) lead-free all-inorganic perovskites nanoplates have recently attracted considerable attention in photodetectors;however, the indepth investigation of thickness on photodetection performance is still lacking. In this work, by constructing the famous metal-semiconductor-metal photodetectors, the photodetection behaviors of thickness-controlled CsSnBr;nanoplates are investigated systematically. Ni electrodes are adopted for ensuring the good ohmic contact behaviors of as-fabricated photodetectors. With the increase in thickness, the photodetection performances improve accordingly, such as photocurrent increases from 0.22 to 19.40 nA, responsivity increases from 72.9 to 4893.7 mA·W^(-1), rise/decay time decreases from 11/35 to 3/10 ms, respectively. Notability, the dark current also increases with the increase in thickness, making the further investigation on the reduction in dark current meaningful.All of the as-fabricated photodetectors are stable, suggesting the careful thickness selection in next-generation high-performance lead-free all-inorganic perovskites photodetectors.展开更多
Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance f...Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.展开更多
The properties of two-dimensional(2D)materials are highly dependent on their phase and thickness.Various phases exist in tin disulfide(SnS_(2)),resulting in promising electronic and optical properties.Hence,accurately...The properties of two-dimensional(2D)materials are highly dependent on their phase and thickness.Various phases exist in tin disulfide(SnS_(2)),resulting in promising electronic and optical properties.Hence,accurately identifying the phase and thickness of SnS_(2)nanosheets is prior to their optoelectronic applications.Herein,layered 2H-SnS_(2)and 4H-SnS_(2)crystals were grown by chemical vapor transportation and the crystalline phase of SnS_(2)was characterized by X-ray diffraction,ultralow frequency(ULF)Raman spectroscopy and high-resolution transmission electron microscope.As-grown crystals were mechanically exfoliated to single-and few-layer nanosheets,which were investigated by optical microscopy,atomic force microscopy and ULF Raman spectroscopy.Although the 2H-SnS_(2)and 4H-SnS_(2)nanosheets have similar optical contrast on SiO_(2)/Si substrates,their ULF Raman spectra obviously show different shear and breathing modes,which are highly dependent on their phases and thicknesses.Interestingly,the SnS_(2)nanosheets have shown phase-dependent electrical properties.The 4H-SnS_(2)nanosheet shows a current on/off ratio of 2.58×10^(5) and excellent photosensitivity,which are much higher than those of the 2H-SnS_(2)nanosheet.Our work not only offers an accurate method for identifying single-and few-layer SnS_(2)nanosheets with different phases,but also paves the way for the application of SnS_(2)nanosheets in highperformance optoelectronic devices.展开更多
Crystal defect engineering is widely used as an effective approach to regulate the optical and optoelectronic properties of semiconductor nanostructures.However,photogenerated electron-hole pair recombination centers ...Crystal defect engineering is widely used as an effective approach to regulate the optical and optoelectronic properties of semiconductor nanostructures.However,photogenerated electron-hole pair recombination centers caused by structural defects usually lead to the reduction of optoelectronic performance.In this work,a high-performance photodetector based on(GaN)_(1-x)(ZnO)_(x)solid solution nanowire with bicrystal structure is fabricated and it shows excellent photoresponse to ultraviolet and visible light.The highest responsivity of the photodetector is as high as 60,86 and 43 A/W under the irradiation of365 nm,532 nm and 650 nm,respectively.The corresponding response time is as fast as 170,320 and 160 ms.Such wide spectral responses can be attributed to various intermediate energy levels induced by the introduction of various structural defects and dopants in the solid solution nanowire.Moreover,the peculiar bicrystal boundary along the axial direction of the nanowire provides two parallel and fast transmission channels for photo-generated carriers,reducing the recombination of photo-generated carriers.Our findings provide a valued example using crystal defect engineering to broaden the photoresponse range and improve the photodetector performance and thus can be extended to other material systems for various optoelectronic applications.展开更多
Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on th...Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on theα-Ga_(2)O_(3)nanorod array.Successfully,the PGF photodetector shows solar-blind UV/visible dual-band photodetection.Our device possesses comparable solar-blind UV responsivity(0.18 mA/W at 235 nm)and much faster response speed(0.102 s)than most of the reported self-poweredα-Ga_(2)O_(3)nanorod array solar-blind UV photodetectors.And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm.The response time is also much faster than the other non-self-poweredβ-Ga_(2)O_(3)DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga_(2)O_(3)heterojunction.The results herein may prove a promising way to realize fast-speed self-poweredα-Ga_(2)O_(3)photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking,imaging,machine vision and communication.展开更多
Spectrally-selective photodetection plays a crucial role in various applications,including target imaging and environmental monitoring.Traditional deep-ultraviolet(DUV)narrowband photodetection systems consist of broa...Spectrally-selective photodetection plays a crucial role in various applications,including target imaging and environmental monitoring.Traditional deep-ultraviolet(DUV)narrowband photodetection systems consist of broadband photodetectors and filters,which complicates the architecture and constrains imaging quality.Here,we introduce an electronic-grade diamond single-crystal photodetector exhibiting an exceptionally narrow spectral response in the DUV range with a full width at half maximum of 8 nm.By examining diamond photodetectors with varying dislocation densities,we propose that mitigating the defect-induced trapping effect to achieve charge collection narrowing,assisted by free exciton radiative recombination,is an effective strategy for narrowband photodetection.The superior performance of this device is evidenced through the imaging of DUV light sources,showcasing its capability to differentiate between distinct light sources and monitor human-safe sterilization systems.Our findings underscore the promising potential applications of electronicgrade diamond in narrowband photodetection and offer a valuable technique for identifying electronic-grade diamond.展开更多
As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions decl...As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers.The heterojunction constructed by two-dimensional(2D)materials can significantly improve the device performance compared with traditional technologies.Here,we report the In Se-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×10^(7) at drain-source voltage of±2 V.The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power.Moreover,the heterojunction has stable photo/dark current states and good photoelectric switching characteristics.Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.展开更多
By introducing the two-mode entangled state representation 〈η｜ whose one mode is a fictitious one accompanying the system mode, this paper presents a new approach for deriving density operator for describing contin...By introducing the two-mode entangled state representation 〈η｜ whose one mode is a fictitious one accompanying the system mode, this paper presents a new approach for deriving density operator for describing continuum photodetection process.展开更多
Using a stimulated parametric down-conversion process combined with a conventional detector, we theoretically propose a scheme to realize the stimulated emission-based detector, and investigate the antinormalty ordere...Using a stimulated parametric down-conversion process combined with a conventional detector, we theoretically propose a scheme to realize the stimulated emission-based detector, and investigate the antinormalty ordered correlation function and Fano factor for the coherent field based on it. Such a detection has advantages over the normally ordered one especially when the intensity of the field is weak.展开更多
CONSPECTUS:Ultraviolet(UV)light,spanning wavelengths from 10 to 400 nm,is ubiquitous in military,livelihood,and scientific domains.Accurate UV photodetection is therefore essential for monitoring environmental radiati...CONSPECTUS:Ultraviolet(UV)light,spanning wavelengths from 10 to 400 nm,is ubiquitous in military,livelihood,and scientific domains.Accurate UV photodetection is therefore essential for monitoring environmental radiation,safeguarding human health,and advancing technological applications in fields such as aerospace,medical science,and ecology.The fabrication of high-performance UV photodetection devices fundamentally depends on the development of high-sensitivity UV photosensitive materials.The evolution of UV photodetection materials has progressed from early wide-bandgap semiconductors like ZnS and ZnSe to third-generation semiconductors such as GaN and Ga_(2)O_(3),and most recently to two-dimensional(2D)wide-bandgap materials that combine exceptional optoelectronic properties with compelling physicochemical properties.Among these,2D perovskite oxides stand out due to their prominent advantages for UV detection.First,this large family of materials generally features wide bandgaps,strong UV absorption,and high spectral selectivity.Second,the tunable bandgaps of 2D perovskite oxides enable precise detection at specific wavelengths.Third,their excellent processability and flexibility facilitate feasible integration into devices,making them promising candidates for flexible photodetectors.Furthermore,2D perovskite oxides boast other properties such as high stability,dielectricity,ferroelectricity,and biocompatibility.These characteristics have promoted the blossoming of 2D perovskite oxides for highperformance UV photodetection and are poised to expand their applications in novel functional optoelectronics.In this Account,we systematically review the development of 2D perovskite oxides,with a focus on their application in the fabrication of high-performance UV photodetectors.First,we describe the top-down synthesis of these materials,highlighting key advances in synthesis techniques.Second,we specifically analyze the intrinsic advantages of 2D perovskite oxides which render them highly suitable for UV detection.Third,we discuss recent progress in the fabrication of UV photodetectors based on 2D perovskite oxides,emphasizing effective strategies for achieving high-performance devices.Next,we explore state-of-the-art optoelectronic applications leveraging these materials.Finally,we present our perspectives on the future development of this promising class of UVsensitive materials.Given their remarkable material diversity,we believe that this Account will provide valuable insights to guide future research and the application of 2D perovskite oxides in high-performance UV photodetectors and functional optoelectronics.展开更多
The rapid development of modern infrared optoelectronic technology has driven a growing demand for high-sensitivity mid-wave infrared(MWIR)photodetectors capable of reliable room-temperature operation.Achieving optima...The rapid development of modern infrared optoelectronic technology has driven a growing demand for high-sensitivity mid-wave infrared(MWIR)photodetectors capable of reliable room-temperature operation.Achieving optimal specific detectivity,a critical performance metric for MWIR photodetection,remains challenging due to inherent limitations imposed such as high dark current,low optical absorption,or both.To address these challenges,we present an approach based on a bipolar-barrier architecture featuring a black phosphorus(BP)/MoTe_(2)/BP tunnel heterostructure integrated with an Au reflector.This configuration delivers simultaneous electrical and optical enhancement,effectively suppressing dark currents and significantly increasing optical absorption.The bipolar-barrier structure minimizes dark current by blocking thermally excited and bias-induced carrier leakage,while facilitating efficient tunneling of photogenerated carriers via trap-assisted photogating mechanisms.In addition,the Au reflector enhances optical absorption through interference effects.As a result,the heterostructure achieves remarkable performance metrics,including a room-temperature specific detectivity of~3.0×10^(10)cm Hz0.5 W^(-1),a high responsivity of~4 A W^(-1),and an external quantum efficiency of~140%within the MWIR range.These results establish the bipolar-barrier tunnel heterostructure as a highly efficient platform,paving the way for the next generation of advanced infrared optoelectronic devices.展开更多
Photodetectors equipped with multi-parameter control hold the potential to deliver exceptional performance in a wide range of scenarios,paving the way for developing novel spin-opto-electronic devices.Nevertheless,the...Photodetectors equipped with multi-parameter control hold the potential to deliver exceptional performance in a wide range of scenarios,paving the way for developing novel spin-opto-electronic devices.Nevertheless,the integration of such capabilities within a single device is challenging due to the necessity of harmonizing multiple materials with varying degrees of freedom.In this study,we introduce the van der Waals magnet CrSBr,featuring inherent anisotropy and distinctive spin-electronic coupling,to this realm.The linear dichroic ratio of the photocurrent in CrSBr tunneling device can reach~60 at 1.65 K,and the photoresponse experiences a significant boost with increasing magnetic field.Additionally,the unique spin-charge coupling engenders a photon energy-dependent photocurrent that is modulated by an external field and is validated by first-principle calculations.Our findings elucidate the effective multi-parameter control of photodetection based on vdWs magnet CrsBr,highlighting its potential applications in cutting-edge optoelectronic devices and as a highly sensitive probe medium.展开更多
Circularly polarized light(CPL)detectors based on chiral organic materials or inorganic structures hold great potential for highly integrated on-chip applications;however,these devices usually have to seek an optimal ...Circularly polarized light(CPL)detectors based on chiral organic materials or inorganic structures hold great potential for highly integrated on-chip applications;however,these devices usually have to seek an optimal balance among the asymmetry factor(g),responsivity(R),and stability.Here,we aim to break such a limitation by combining chiral inorganic plasmonic metamaterials with electrical gain,by which one can enhance both g and R while simultaneously securing the stability.We demonstrate a CPL detector based on"S"-shaped chiral Ag nanowires/InAs/Si heterostructures,where the meticulous construction of the"S"-shaped chiral Ag nanowires with the overlaying InAs channel enables a substantial absorption asymmetry in InAs due to differentiated localized surface plasmon resonances excited by left-and right-circularly polarized(LCP and RCP)light.The InAs serves as a conductive channel,achieving significant electrical gain through photoconductive effects assisted by photogating,gate modulation,and trap effects.The proposed inorganic stable device exhibits a high electrical g of~1.56,an ultra-high R of~33,900 A W^(-1),a large specific detectivity of~1.8×10^(11) Jones,and an ultra-short response time of~23 ns,with the high performance achieved in a broad spectral range from 2μm to 2.8μm.Ultimately,by encoding ASCII code 1 and 0 onto LCP and RCP light,respectively,and leveraging the device's heightened discrimination and response performance to these polarizations,we demonstrate a simple yet key-free optical encryption communication scheme at the device level,highlighting its extensive potential for system-level applications.展开更多
The surging demand and adoption of infrared photodetectors(IRPDs)in sectors of imaging,mobile,healthcare,automobiles,and optical communication are hindered by the prohibitive costs of traditional IRPD materials such a...The surging demand and adoption of infrared photodetectors(IRPDs)in sectors of imaging,mobile,healthcare,automobiles,and optical communication are hindered by the prohibitive costs of traditional IRPD materials such as InGaAs and HgCdTe.Quantum dots(QDs),especially lead chalcogenide(PbS)QDs,represent the next-generation lowbandgap semiconductors for near-infrared(NIR)detection due to their high optical absorption coefficient,tunable bandgap,low fabrication costs,and device compatibility.Innovative techniques such as ligand exchange processes have been proposed to boost the performance of PbS QDs photodetectors,mostly using short ligands like 1,2-ethanedithiol(EDT)and tetrabutylammonium iodide(TBAI).Our study explores the use of long-chain dithiol ligands to enhance the responsivity of PbS QDs/InGaZnO phototransistors.Long-chain dithiol ligands are found to suppress horizontal electron transport/leakage and electron trapping,which is beneficial for responsivity.Utilizing a novel ligand-exchange technique with 1,10-decanedithiol(DDT),we develop high-performance hybrid phototransistors with detectivity exceeding 10^(14) Jones.Based on these phototransistors,we demonstrate image communication through a NIR optical communication system.The long-ligand PbS QDs/InGaZnO hybrid phototransistor demonstrates significant potential for NIR low-dose imaging and optical communication,particularly in scenarios requiring the detection of weak light signals at low frequencies.展开更多
Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios,which can effectively improve the recognition rate of objects.However,in the existing technical scenar...Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios,which can effectively improve the recognition rate of objects.However,in the existing technical scenarios,it is usually necessary to use complex optical devices such as filters or gratings to achieve wavelength extraction.These methods inevitably bring about the problems of complex structure and low integration.Therefore,it is necessary to realize the wavelength extraction function at the device level.Here,we realize the wavelength extraction function and wide-spectrum imaging function in the visible to infrared band based on a visible light absorber/floating gate storage layer/near-infrared(NIR)photogating layer configuration.Under infrared irradiation,the device exhibits negative photoresponse through the absorption of infrared light by the Ge substrate and the photogating effect,and realizes visible positive light response through the absorption of visible light by MoS2.Utilizing the memory function of the device,by cleverly changing the gate voltage pulse,the photoresponse state of the output voltage is effectively adjusted to achieve three imaging states:visible light response only,response to both visible and infrared light,and infrared light response only.Active selective imaging of the word“XDU”was achieved at 532 and 1550 nm wavelength.By using the photoresponse data of the device,the passive imaging of the topography of Xi'an,Shaanxi Province was obtained,which effectively improves the recognition rate of mountains and rivers.The proposed reconfigurable visible–infrared wavelength-selective imaging photodetector can effectively extract image information and improve the image recognition rate while ensuring a simple structure.The single-chip-based spectral separation imaging solution lays a good foundation for the further development of visible–infrared vision applications.展开更多
Integrating photodetection and display functions within a single electronic device holds significant application prospects.However,to date,most of them relied on complex device structures that involve photodetectors w...Integrating photodetection and display functions within a single electronic device holds significant application prospects.However,to date,most of them relied on complex device structures that involve photodetectors with readout circuits or integration with light-emitting diodes(LEDs).Here,we introduce infrared optical material—Er^(3+)doped fluoride glass—into conventional organic photodetectors,enabling new material options for advanced photodetection and imaging technologies.A novel compact system that achieves dual-mode of ultraviolet(UV)/infrared(IR)photodetection and visible display by introducing fluoride glass with excellent Stokes/anti-Stokes luminescence in an organic photodetector(OPD).This device exhibits an ultra-wideband response across multiple wavelengths,ranging from approximately 250 to 1550 nm.It presents impressive IR responsivity(∼8 mA/W with anti-Stokes luminescence)and UV photoresponse enhancement(from∼1.5 to∼3.5μA with Stokes luminescence).Additionally,it enables direct visible display for wavelengths of 1550,980,and 355 nm.The device can function effectively at high temperatures of up to 200℃for 30 min.Based on this device,a visible and secure optical communication process is successfully realized with UV(275 nm)-IR(1550 nm)communication bands.展开更多
基金the Natural Science Foundation of Shandong Province(Nos.ZR2022JQ05 and ZR2024MF010).
文摘With high surface-to-volume ratio,the abundant surface states and high carrier concentration are challenging the nearinfrared photodetection behaviors of narrow band gap semiconductors nanowires.In this study,the narrow band gap semiconductor of Bi_(2)O_(2)Se nanosheets(NSs)is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires(NWs)for demonstrating the impressive self-powered NIR photodetection.Benefiting from the built-in electric field of~140 meV,the as-constructed NW/NS mixeddimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA,high I_(light)/I_(dark)ratio of 82 and fast response times of<2/2 ms at room temperature.The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique.The excellent photodetection performance promises the asconstructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.
基金financially supported by the National Natural Science Foundation of China(Nos.22435005,22193042,21921001,22305105,52202194,22201284)Natural Science Foundation of Jiangxi Province(No.20224BAB213003)+1 种基金the Natural Science Foundation of Fujian Province(No.2023J05076)Jiangxi Provincial Education Department Science and Technology Research Foundation(No.GJJ2200384)。
文摘Two-dimensional perovskite ferroelectric which strongly couple ferroelectricity with semiconducting properties are promising candidates for optoelectronic applications.However,it is still a great challenge to fabricate self-powered broadband photodetectors with low detection limit.Herein,we successfully realized self-powered broadband photodetection with low detection limit by using a trilayered perovskite ferroelectric(BA)_(2)EA_(2)Pb_(3)I_(10)(1,BA=n-butylamine,EA=ethylamine).Giving to its large spontaneous polarization(5.6μC/cm^(2)),1 exhibits an open-circuit voltage of 0.25 V which provide driving force to separate carriers.Combining with its low dark current(~10^(-14)A)and narrow bandgap(Eg=1.86 e V),1 demonstrates great potential on detecting the broadband weak lights.Thus,a prominent photodetection performance with high open-off ratio(~10^(5)),outstanding responsivity(>10 m A/W),and promising detectivity(>1011Jones),as well as the low detecting limit(~nW/cm^(2))among the wide wavelength from 377 nm to637 nm was realized based on the single crystal of 1.This work demonstrates the great potential of 2D perovskite ferroelectric on self-powered broadband photodetectors.
基金financially supported by the National Natural Science Foundation of China(Nos.22005183 and 22275117)the Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices(No.KF202204)。
文摘Dion-Jacobson (DJ) phase hybrid perovskites have been proven to improve the photovoltaic performance of the devices due to its unique structure.At present,some DJ hybrid perovskites have been reported and used for photodetection filed,but most of them are based on lead-bromide systems,which is not conducive to construct broadband photodetection devices due to the limitation of intrinsic absorption.Herein,we constructed a bilayered DJ hybrid perovskite (3AMPY)(EA)Pb_(2)I_(7)(3AMPY^(2+)is 3-(aminomethyl)pyridinium,EA^(+)is ethylammonium) using an aromatic spacer,which exhibit large current on/off ratios of 10~4under 520 and 637 nm illumination.In particular,the single crystal device based on (3AMPY)(EA)Pb_(2)I_(7)shows a distinguished detectivity of 7.4×10^(12)Jones and a high responsivity of 0.89A/W under 637 nm illumination.Such finding not only enriches the quantities of DJ hybrid perovskites,but also provides useful assistance for constructing high-performance optoelectronic device in the future.
基金supported by the National Natural Science Foundation of China(Nos.22193042,22125110,22075285,52473283,21921001,U21A2069)the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(No.ZDBS-LY-SLH024)the Youth Innovation Promotion of Chinese Academy of Sciences(No.2020307)。
文摘Polar semiconductors,particularly the emerging polar two-dimensional(2D)halide perovskites,have motivated immense interest in diverse photoelectronic devices due to their distinguishing polarizationgenerated photoelectric effects.However,the constraints on the organic cation's choice are still subject to limitations of polar 2D halide perovskites due to the size of the inorganic pocket between adjacent corner-sharing octahedra.Herein,a mixed spacer cation ordering strategy is employed to assemble a polar 2D halide perovskite NMAMAPb Br_(4)(NMPB,NMA is N-methylbenzene ammonium,MA is methylammonium)with alternating cation in the interlayer space.Driven by the incorporation of a second MA cation,the perovskite layer transformed from a 2D Pb_(7)Br_(24)anionic network with corner-and face-sharing octahedra to a flat 2D PbBr_(4)perovskite networks only with corner-sharing octahedra.In the crystal structure of NMPB,the asymmetric hydrogen-bonding interactions between ordered mixed-spacer cations and 2D perovskite layers give rise to a second harmonic generation response and a large polarization of 1.3μC/cm^(2).More intriguingly,the ordered 2D perovskite networks endow NMPB with excellent self-powered polarization-sensitive detection performance,showing a considerable polarization-related dichroism ratio up to 1.87.The reconstruction of an inorganic framework within a crystal through mixed cation ordering offers a new synthetic tool for templating perovskite lattices with controlled properties,overcoming limitations of conventional cation choice.
基金the National Key R&D Program of China(No.2017YFA0305500)the National Natural Science Foundation of China(Nos.61904096 and 62104133)+3 种基金Taishan Scholars Program of Shandong Province(No.tsqn201812006)Shandong University Youth Innovation Supporting Program(No.2019KJN020)Shandong University Multidisciplinary Research and Innovation Team of Young Scholars(No.2020QNQT015)‘‘Outstanding Youth Scholar and Qilu Young Scholar’’programs of Shandong University。
文摘Non-layered two-dimensional(2D) lead-free all-inorganic perovskites nanoplates have recently attracted considerable attention in photodetectors;however, the indepth investigation of thickness on photodetection performance is still lacking. In this work, by constructing the famous metal-semiconductor-metal photodetectors, the photodetection behaviors of thickness-controlled CsSnBr;nanoplates are investigated systematically. Ni electrodes are adopted for ensuring the good ohmic contact behaviors of as-fabricated photodetectors. With the increase in thickness, the photodetection performances improve accordingly, such as photocurrent increases from 0.22 to 19.40 nA, responsivity increases from 72.9 to 4893.7 mA·W^(-1), rise/decay time decreases from 11/35 to 3/10 ms, respectively. Notability, the dark current also increases with the increase in thickness, making the further investigation on the reduction in dark current meaningful.All of the as-fabricated photodetectors are stable, suggesting the careful thickness selection in next-generation high-performance lead-free all-inorganic perovskites photodetectors.
文摘Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.
基金supported by the National Natural Science Foun-dation of China(Nos.51832001,21571101 and 51322202)the Natural Science Foundation of Jiangsu Province in China(No.BK20161543)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.15KJB430016).
文摘The properties of two-dimensional(2D)materials are highly dependent on their phase and thickness.Various phases exist in tin disulfide(SnS_(2)),resulting in promising electronic and optical properties.Hence,accurately identifying the phase and thickness of SnS_(2)nanosheets is prior to their optoelectronic applications.Herein,layered 2H-SnS_(2)and 4H-SnS_(2)crystals were grown by chemical vapor transportation and the crystalline phase of SnS_(2)was characterized by X-ray diffraction,ultralow frequency(ULF)Raman spectroscopy and high-resolution transmission electron microscope.As-grown crystals were mechanically exfoliated to single-and few-layer nanosheets,which were investigated by optical microscopy,atomic force microscopy and ULF Raman spectroscopy.Although the 2H-SnS_(2)and 4H-SnS_(2)nanosheets have similar optical contrast on SiO_(2)/Si substrates,their ULF Raman spectra obviously show different shear and breathing modes,which are highly dependent on their phases and thicknesses.Interestingly,the SnS_(2)nanosheets have shown phase-dependent electrical properties.The 4H-SnS_(2)nanosheet shows a current on/off ratio of 2.58×10^(5) and excellent photosensitivity,which are much higher than those of the 2H-SnS_(2)nanosheet.Our work not only offers an accurate method for identifying single-and few-layer SnS_(2)nanosheets with different phases,but also paves the way for the application of SnS_(2)nanosheets in highperformance optoelectronic devices.
基金partially supported by the National Natural Science Foundation of China(Nos.51702326 and 51872296)the Liaoning Province Natural Science Foundation(No.2019-MS333)+3 种基金the Youth Innovation Promotion Association of the Chinese Academy of Sciences(No.2019197)the Shenyang National Laboratory for Materials Science(No.L2019F36)the Shenyang Planning Project of Science and Technology(No.18-013-0-52)Tomsk Polytechnic University Competitiveness Enhancement Program grant with project number TPU CEP NOC N.M.Kizhnera188/2020。
文摘Crystal defect engineering is widely used as an effective approach to regulate the optical and optoelectronic properties of semiconductor nanostructures.However,photogenerated electron-hole pair recombination centers caused by structural defects usually lead to the reduction of optoelectronic performance.In this work,a high-performance photodetector based on(GaN)_(1-x)(ZnO)_(x)solid solution nanowire with bicrystal structure is fabricated and it shows excellent photoresponse to ultraviolet and visible light.The highest responsivity of the photodetector is as high as 60,86 and 43 A/W under the irradiation of365 nm,532 nm and 650 nm,respectively.The corresponding response time is as fast as 170,320 and 160 ms.Such wide spectral responses can be attributed to various intermediate energy levels induced by the introduction of various structural defects and dopants in the solid solution nanowire.Moreover,the peculiar bicrystal boundary along the axial direction of the nanowire provides two parallel and fast transmission channels for photo-generated carriers,reducing the recombination of photo-generated carriers.Our findings provide a valued example using crystal defect engineering to broaden the photoresponse range and improve the photodetector performance and thus can be extended to other material systems for various optoelectronic applications.
基金Project supported by the National Natural Science Foundation of China(Grant No.61705155)。
文摘Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on theα-Ga_(2)O_(3)nanorod array.Successfully,the PGF photodetector shows solar-blind UV/visible dual-band photodetection.Our device possesses comparable solar-blind UV responsivity(0.18 mA/W at 235 nm)and much faster response speed(0.102 s)than most of the reported self-poweredα-Ga_(2)O_(3)nanorod array solar-blind UV photodetectors.And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm.The response time is also much faster than the other non-self-poweredβ-Ga_(2)O_(3)DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga_(2)O_(3)heterojunction.The results herein may prove a promising way to realize fast-speed self-poweredα-Ga_(2)O_(3)photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking,imaging,machine vision and communication.
基金supports from Natural Science Foundation of Guangdong Province for Distinguished Young Scholars(Grant No.2021B1515020105).
文摘Spectrally-selective photodetection plays a crucial role in various applications,including target imaging and environmental monitoring.Traditional deep-ultraviolet(DUV)narrowband photodetection systems consist of broadband photodetectors and filters,which complicates the architecture and constrains imaging quality.Here,we introduce an electronic-grade diamond single-crystal photodetector exhibiting an exceptionally narrow spectral response in the DUV range with a full width at half maximum of 8 nm.By examining diamond photodetectors with varying dislocation densities,we propose that mitigating the defect-induced trapping effect to achieve charge collection narrowing,assisted by free exciton radiative recombination,is an effective strategy for narrowband photodetection.The superior performance of this device is evidenced through the imaging of DUV light sources,showcasing its capability to differentiate between distinct light sources and monitor human-safe sterilization systems.Our findings underscore the promising potential applications of electronicgrade diamond in narrowband photodetection and offer a valuable technique for identifying electronic-grade diamond.
基金Project supported by the Ministry of Science and Technology of China(Grant No.2018YFA0305800)the National Natural Science Foundation of China(Grant No.61888102)the Chinese Academy of Sciences(Grant Nos.ZDBSSSW-WHC001,XDB33030100,XDB30000000,and YSBR-003)。
文摘As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers.The heterojunction constructed by two-dimensional(2D)materials can significantly improve the device performance compared with traditional technologies.Here,we report the In Se-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×10^(7) at drain-source voltage of±2 V.The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power.Moreover,the heterojunction has stable photo/dark current states and good photoelectric switching characteristics.Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.
基金supported by President Foundation of Chinese Academy of Sciencesthe National Natural Science Foundation of China (Grant Nos 10775097 and 10874174)
文摘By introducing the two-mode entangled state representation 〈η｜ whose one mode is a fictitious one accompanying the system mode, this paper presents a new approach for deriving density operator for describing continuum photodetection process.
基金Project supported in part by the National Natural Science Foundation of China (Grant Nos. 10774096 and 60708010)the National Basic Research Program of China (Grant No. 2006CB921101)the Research Fund for the Returned Overseas Chinese Scholars of Shanxi Province,China (Grant No. 200713)
文摘Using a stimulated parametric down-conversion process combined with a conventional detector, we theoretically propose a scheme to realize the stimulated emission-based detector, and investigate the antinormalty ordered correlation function and Fano factor for the coherent field based on it. Such a detection has advantages over the normally ordered one especially when the intensity of the field is weak.
基金support from the National Natural Science Foundation of China(Grant Nos.52425308,62374035 and 92263106).
文摘CONSPECTUS:Ultraviolet(UV)light,spanning wavelengths from 10 to 400 nm,is ubiquitous in military,livelihood,and scientific domains.Accurate UV photodetection is therefore essential for monitoring environmental radiation,safeguarding human health,and advancing technological applications in fields such as aerospace,medical science,and ecology.The fabrication of high-performance UV photodetection devices fundamentally depends on the development of high-sensitivity UV photosensitive materials.The evolution of UV photodetection materials has progressed from early wide-bandgap semiconductors like ZnS and ZnSe to third-generation semiconductors such as GaN and Ga_(2)O_(3),and most recently to two-dimensional(2D)wide-bandgap materials that combine exceptional optoelectronic properties with compelling physicochemical properties.Among these,2D perovskite oxides stand out due to their prominent advantages for UV detection.First,this large family of materials generally features wide bandgaps,strong UV absorption,and high spectral selectivity.Second,the tunable bandgaps of 2D perovskite oxides enable precise detection at specific wavelengths.Third,their excellent processability and flexibility facilitate feasible integration into devices,making them promising candidates for flexible photodetectors.Furthermore,2D perovskite oxides boast other properties such as high stability,dielectricity,ferroelectricity,and biocompatibility.These characteristics have promoted the blossoming of 2D perovskite oxides for highperformance UV photodetection and are poised to expand their applications in novel functional optoelectronics.In this Account,we systematically review the development of 2D perovskite oxides,with a focus on their application in the fabrication of high-performance UV photodetectors.First,we describe the top-down synthesis of these materials,highlighting key advances in synthesis techniques.Second,we specifically analyze the intrinsic advantages of 2D perovskite oxides which render them highly suitable for UV detection.Third,we discuss recent progress in the fabrication of UV photodetectors based on 2D perovskite oxides,emphasizing effective strategies for achieving high-performance devices.Next,we explore state-of-the-art optoelectronic applications leveraging these materials.Finally,we present our perspectives on the future development of this promising class of UVsensitive materials.Given their remarkable material diversity,we believe that this Account will provide valuable insights to guide future research and the application of 2D perovskite oxides in high-performance UV photodetectors and functional optoelectronics.
基金supported by the Singapore Agency for Science,Technology and Research(A*STAR)(M22K2c0080,R23I0IR041 and M23M2b0056)National Research Foundation Singapore(Award No.NRFCRP22-2019-0007,NRF-CRP29-2022-0003,and NRF-MSG-2023-0002).
文摘The rapid development of modern infrared optoelectronic technology has driven a growing demand for high-sensitivity mid-wave infrared(MWIR)photodetectors capable of reliable room-temperature operation.Achieving optimal specific detectivity,a critical performance metric for MWIR photodetection,remains challenging due to inherent limitations imposed such as high dark current,low optical absorption,or both.To address these challenges,we present an approach based on a bipolar-barrier architecture featuring a black phosphorus(BP)/MoTe_(2)/BP tunnel heterostructure integrated with an Au reflector.This configuration delivers simultaneous electrical and optical enhancement,effectively suppressing dark currents and significantly increasing optical absorption.The bipolar-barrier structure minimizes dark current by blocking thermally excited and bias-induced carrier leakage,while facilitating efficient tunneling of photogenerated carriers via trap-assisted photogating mechanisms.In addition,the Au reflector enhances optical absorption through interference effects.As a result,the heterostructure achieves remarkable performance metrics,including a room-temperature specific detectivity of~3.0×10^(10)cm Hz0.5 W^(-1),a high responsivity of~4 A W^(-1),and an external quantum efficiency of~140%within the MWIR range.These results establish the bipolar-barrier tunnel heterostructure as a highly efficient platform,paving the way for the next generation of advanced infrared optoelectronic devices.
基金supported by the National Key R&D Program of China(no.2022YFA1203902)the National Natural Science Foundation of China(no.12425402 and no.12250007)+1 种基金Bejing Natural Science Foundation(no.JQ21018)the China Postdoctoral Science Foundation(2023TQ0003 and 2023M740122).
文摘Photodetectors equipped with multi-parameter control hold the potential to deliver exceptional performance in a wide range of scenarios,paving the way for developing novel spin-opto-electronic devices.Nevertheless,the integration of such capabilities within a single device is challenging due to the necessity of harmonizing multiple materials with varying degrees of freedom.In this study,we introduce the van der Waals magnet CrSBr,featuring inherent anisotropy and distinctive spin-electronic coupling,to this realm.The linear dichroic ratio of the photocurrent in CrSBr tunneling device can reach~60 at 1.65 K,and the photoresponse experiences a significant boost with increasing magnetic field.Additionally,the unique spin-charge coupling engenders a photon energy-dependent photocurrent that is modulated by an external field and is validated by first-principle calculations.Our findings elucidate the effective multi-parameter control of photodetection based on vdWs magnet CrsBr,highlighting its potential applications in cutting-edge optoelectronic devices and as a highly sensitive probe medium.
基金The National Natural Science Foundation of China(62105126,62120106001,and 62205227)the Natural Science Foundation of Jiangsu Province(BK20210454),the China Postdoctoral Science Foundation(2023M731449)+3 种基金the Undergraduate Training Program for Innovation and Entrepreneurship,Soochow University(202310285116Y)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(22KJB140005)the Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province,Soochow University(ZZ2311)the Priority Academic Program Development(PAPD)of Jiangsu Higher Education Institutions.
文摘Circularly polarized light(CPL)detectors based on chiral organic materials or inorganic structures hold great potential for highly integrated on-chip applications;however,these devices usually have to seek an optimal balance among the asymmetry factor(g),responsivity(R),and stability.Here,we aim to break such a limitation by combining chiral inorganic plasmonic metamaterials with electrical gain,by which one can enhance both g and R while simultaneously securing the stability.We demonstrate a CPL detector based on"S"-shaped chiral Ag nanowires/InAs/Si heterostructures,where the meticulous construction of the"S"-shaped chiral Ag nanowires with the overlaying InAs channel enables a substantial absorption asymmetry in InAs due to differentiated localized surface plasmon resonances excited by left-and right-circularly polarized(LCP and RCP)light.The InAs serves as a conductive channel,achieving significant electrical gain through photoconductive effects assisted by photogating,gate modulation,and trap effects.The proposed inorganic stable device exhibits a high electrical g of~1.56,an ultra-high R of~33,900 A W^(-1),a large specific detectivity of~1.8×10^(11) Jones,and an ultra-short response time of~23 ns,with the high performance achieved in a broad spectral range from 2μm to 2.8μm.Ultimately,by encoding ASCII code 1 and 0 onto LCP and RCP light,respectively,and leveraging the device's heightened discrimination and response performance to these polarizations,we demonstrate a simple yet key-free optical encryption communication scheme at the device level,highlighting its extensive potential for system-level applications.
基金the EPSRC SWIMS(EP/V039717/1)Royal Society(RGS\R1\221009 and IEC\NSFC\211201)+4 种基金Leverhulme Trust(RPG-6062022-263)Sêr Cymru programme-Enhancing Competitiveness Equipment Awards 2022-23(MA/VG/2715/22-PN66)the financial support from National Natural Science Foundation of China(NSFC)Grant No.62105214the financial support from National Natural Science Foundation of China(NSFC)No.61974006Shenzhen Science and Technology Innovation Committee(KJZD20230923113759002 and GJHZ20240218113959009).
文摘The surging demand and adoption of infrared photodetectors(IRPDs)in sectors of imaging,mobile,healthcare,automobiles,and optical communication are hindered by the prohibitive costs of traditional IRPD materials such as InGaAs and HgCdTe.Quantum dots(QDs),especially lead chalcogenide(PbS)QDs,represent the next-generation lowbandgap semiconductors for near-infrared(NIR)detection due to their high optical absorption coefficient,tunable bandgap,low fabrication costs,and device compatibility.Innovative techniques such as ligand exchange processes have been proposed to boost the performance of PbS QDs photodetectors,mostly using short ligands like 1,2-ethanedithiol(EDT)and tetrabutylammonium iodide(TBAI).Our study explores the use of long-chain dithiol ligands to enhance the responsivity of PbS QDs/InGaZnO phototransistors.Long-chain dithiol ligands are found to suppress horizontal electron transport/leakage and electron trapping,which is beneficial for responsivity.Utilizing a novel ligand-exchange technique with 1,10-decanedithiol(DDT),we develop high-performance hybrid phototransistors with detectivity exceeding 10^(14) Jones.Based on these phototransistors,we demonstrate image communication through a NIR optical communication system.The long-ligand PbS QDs/InGaZnO hybrid phototransistor demonstrates significant potential for NIR low-dose imaging and optical communication,particularly in scenarios requiring the detection of weak light signals at low frequencies.
基金National Natural Science Foundation of China,Grant/Award Numbers:62374129,62134005,62204188National Key Research and Development Program of China,Grant/Award Number:2023YFB2805000。
文摘Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios,which can effectively improve the recognition rate of objects.However,in the existing technical scenarios,it is usually necessary to use complex optical devices such as filters or gratings to achieve wavelength extraction.These methods inevitably bring about the problems of complex structure and low integration.Therefore,it is necessary to realize the wavelength extraction function at the device level.Here,we realize the wavelength extraction function and wide-spectrum imaging function in the visible to infrared band based on a visible light absorber/floating gate storage layer/near-infrared(NIR)photogating layer configuration.Under infrared irradiation,the device exhibits negative photoresponse through the absorption of infrared light by the Ge substrate and the photogating effect,and realizes visible positive light response through the absorption of visible light by MoS2.Utilizing the memory function of the device,by cleverly changing the gate voltage pulse,the photoresponse state of the output voltage is effectively adjusted to achieve three imaging states:visible light response only,response to both visible and infrared light,and infrared light response only.Active selective imaging of the word“XDU”was achieved at 532 and 1550 nm wavelength.By using the photoresponse data of the device,the passive imaging of the topography of Xi'an,Shaanxi Province was obtained,which effectively improves the recognition rate of mountains and rivers.The proposed reconfigurable visible–infrared wavelength-selective imaging photodetector can effectively extract image information and improve the image recognition rate while ensuring a simple structure.The single-chip-based spectral separation imaging solution lays a good foundation for the further development of visible–infrared vision applications.
基金supported by the National Key Research and Development Program of China(2021YFB3500901)the National Natural Science Foundation of China(52425308,92263106,and 62374035)+7 种基金the National Postdoctoral Researcher Program(GZC20232820)the China Postdoctoral Science Foundation(2024M753361)the China National Postdoctoral Program for Innovative Talents(BX20240087)the Chinese Academy of Sciences Basic and Cross Cutting Frontier Scientific Research Pilot Project(XDB0650301)the 2024 Shanghai Oriental Talent Program Youth Project(QNKJ2024012)Special Project of the Ministry of Industry and Information Technology(TC230H0AC/157)China Academy of Sciences Youth Interdisciplinary Team(JCTD-2022-09)the Youth Innovation Promotion Association,China Academy of Sciences(2022244).
文摘Integrating photodetection and display functions within a single electronic device holds significant application prospects.However,to date,most of them relied on complex device structures that involve photodetectors with readout circuits or integration with light-emitting diodes(LEDs).Here,we introduce infrared optical material—Er^(3+)doped fluoride glass—into conventional organic photodetectors,enabling new material options for advanced photodetection and imaging technologies.A novel compact system that achieves dual-mode of ultraviolet(UV)/infrared(IR)photodetection and visible display by introducing fluoride glass with excellent Stokes/anti-Stokes luminescence in an organic photodetector(OPD).This device exhibits an ultra-wideband response across multiple wavelengths,ranging from approximately 250 to 1550 nm.It presents impressive IR responsivity(∼8 mA/W with anti-Stokes luminescence)and UV photoresponse enhancement(from∼1.5 to∼3.5μA with Stokes luminescence).Additionally,it enables direct visible display for wavelengths of 1550,980,and 355 nm.The device can function effectively at high temperatures of up to 200℃for 30 min.Based on this device,a visible and secure optical communication process is successfully realized with UV(275 nm)-IR(1550 nm)communication bands.
