In this paper, a new pre-alignment approach based on Four-Quadrant-Photo-Detector （FQPD） for IC mask is presented. The voltage outputs from FQPDs are the functions of alignment mark＇s position offsets with respect ...In this paper, a new pre-alignment approach based on Four-Quadrant-Photo-Detector （FQPD） for IC mask is presented. The voltage outputs from FQPDs are the functions of alignment mark＇s position offsets with respect to FQPDs. The functions are obtained with least squares error （LSE）-based polynomial fitting after the normalization of experimental data. As the acquired functions are not monotonic about their variables, the alignment mark＇s position offset cannot be given by direct inverse operation on the obtained functions. However, the piecewise polynomial fitting gives the inverse function, with which the alignment mark＇s position offset can be predicted according to the voltage outputs of FQPDs. On the basis of prediction, a pre-alignment control strategy is proposed. The feasibility and robustness of the pre-alignment approach is shown by experiments. Furthermore, the results demonstrate that the maximum error of mask＇s position offset in the X- and Y- directions is less than 15μm after coarse pre-alignment. Keywords： Four-Quadrant-Photo-Detector （FQPD）, pre-alignment, IC mask, polynomial fitting展开更多
We conducted a theoretical study on the electronic properties of a single-layer graphene asymmetric quantum well.Quantification of energy levels is limited by electron–hole conversion at the barrier interfaces and fr...We conducted a theoretical study on the electronic properties of a single-layer graphene asymmetric quantum well.Quantification of energy levels is limited by electron–hole conversion at the barrier interfaces and free-electron continuum.Electron–hole conversion at the barrier interfaces can be controlled by introducing an asymmetry between barriers and taking into account the effect of the interactions of the graphene sheet with the substrate.The interaction with the substrate induces an effective mass to carriers,allowing observation of Fabry–P′erot resonances under normal incidence and extinction of Klein tunneling.The asymmetry,between barriers creates a transmission gap between confined states and free-electron continuum,allowing the large graphene asymmetric quantum well to be exploited as a photo-detector operating at mid-and far-infrared frequency regimes.展开更多
A new type of ultraviolet photo-detectors （UVPDs） based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including 1-V characteristics and time response were ...A new type of ultraviolet photo-detectors （UVPDs） based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including 1-V characteristics and time response were studied in this work. SiC nan- owires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameters of SiC nanowires varied from 100 to 200 nm while they were some centimeters long and the SiC nanowires were with zinc blended cubic form （β-SiC） tested by X-ray diffraction. A bundle of nanowires was fixed onto two legs＇ base by conductive silver paste to form the UVPDs. The electrical measurement of the device showed a significant increase of current when the device was exposed to 254 nm UV light, and the rising time of the device is very short, but the falling time is relatively long. Our results show that the UVPDs based on SiC nanowires have excellent electrical and optical properties which can be potentially applied.展开更多
碲镉汞短波红外焦平面探测器在红外天文观测中具有重要作用。采用光子转移曲线(Photon Transfer Curve, PTC)来表征探测器性能参数是一种重要的测试方法。根据PTC测量探测器的增益是表征探测器其他性能的前提。采用碲镉汞液相外延薄膜...碲镉汞短波红外焦平面探测器在红外天文观测中具有重要作用。采用光子转移曲线(Photon Transfer Curve, PTC)来表征探测器性能参数是一种重要的测试方法。根据PTC测量探测器的增益是表征探测器其他性能的前提。采用碲镉汞液相外延薄膜材料和n-on-p芯片结构制备了640×512规格的红外探测器,探测器截止波长为2.0μm。用PTC方法测量红外焦平面探测器的增益,发现在焦平面上不同区域的增益是不均匀的,增益的非均匀性达到了20.2%。增益的非均匀性反映了探测器芯片内部性能的差异,尤其是不同光敏元噪声的差异。芯片加工过程可能是引起增益不均匀的原因之一。通过改进芯片工艺,特别是改进芯片的机械化学减薄工艺,降低抛光损伤,提高了探测器芯片表面不同区域的增益均匀性。改进工艺后,增益的非均匀性从20.2%降低到0.3%,获得了增益均匀的探测器芯片,增益的平均值为0.159 DN/e-,并测量得到探测器的暗电流为2.2 e-/s,读出噪声为67 e-。展开更多
A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimen...A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.展开更多
为实现高能电子束发生轫致辐射产生的空间低强度脉冲X/γ射线的单粒子测量,本文基于近饱和放大时间过阈(time over threshold,TOT)技术,采用低带宽的运放和差分输出的甄别器,研制了一种用于硅光电倍增管(silicon photo-multiplier,SiPM...为实现高能电子束发生轫致辐射产生的空间低强度脉冲X/γ射线的单粒子测量,本文基于近饱和放大时间过阈(time over threshold,TOT)技术,采用低带宽的运放和差分输出的甄别器,研制了一种用于硅光电倍增管(silicon photo-multiplier,SiPM)的阵列型探测器全部通道读出的前端电子学系统。该系统能够获得能量、时间、强度等较为全面的物理信息,并在后端数字电路的FPGA内部通过脉宽和时间戳符合挑选出有效脉冲X/γ射线事件。本文详细介绍了前端电子学系统的设计方案、性能测试及功能验证等,并通过实验获得了低能区(50~200 keV)能量范围内的脉宽-能量谱和强度谱。测量结果表明:在低能区范围内,探测器阵列输出信号通过本文研制的前端电路处理后,脉宽和能量具有正相关关系,验证了脉冲X/γ射线有效事件识别的可行性;近饱和放大提高了定时精度,修正后可达800 ps。展开更多
采用光离子化检测器(PID)传感器对挥发性有机化合物(VOC)气体进行检测,通过对PID的研究,自行设计适合本系统的PID检测器结构,并搭建了一套完整的检测系统。通过实验证明:所搭建的以PID检测器为核心的VOC气体检测系统已能够实现对VOC气...采用光离子化检测器(PID)传感器对挥发性有机化合物(VOC)气体进行检测,通过对PID的研究,自行设计适合本系统的PID检测器结构,并搭建了一套完整的检测系统。通过实验证明:所搭建的以PID检测器为核心的VOC气体检测系统已能够实现对VOC气体的定量检测。确定实验流量为160~170 m L/min,且在(0~5)×10-6内传感器响应呈线性关系。展开更多
基金This work was supported by National High Technology Research and Development Program of PRC (No. 2002AA420040)National 973 Program of PRC (No. 2002CB312200).
文摘In this paper, a new pre-alignment approach based on Four-Quadrant-Photo-Detector （FQPD） for IC mask is presented. The voltage outputs from FQPDs are the functions of alignment mark＇s position offsets with respect to FQPDs. The functions are obtained with least squares error （LSE）-based polynomial fitting after the normalization of experimental data. As the acquired functions are not monotonic about their variables, the alignment mark＇s position offset cannot be given by direct inverse operation on the obtained functions. However, the piecewise polynomial fitting gives the inverse function, with which the alignment mark＇s position offset can be predicted according to the voltage outputs of FQPDs. On the basis of prediction, a pre-alignment control strategy is proposed. The feasibility and robustness of the pre-alignment approach is shown by experiments. Furthermore, the results demonstrate that the maximum error of mask＇s position offset in the X- and Y- directions is less than 15μm after coarse pre-alignment. Keywords： Four-Quadrant-Photo-Detector （FQPD）, pre-alignment, IC mask, polynomial fitting
文摘We conducted a theoretical study on the electronic properties of a single-layer graphene asymmetric quantum well.Quantification of energy levels is limited by electron–hole conversion at the barrier interfaces and free-electron continuum.Electron–hole conversion at the barrier interfaces can be controlled by introducing an asymmetry between barriers and taking into account the effect of the interactions of the graphene sheet with the substrate.The interaction with the substrate induces an effective mass to carriers,allowing observation of Fabry–P′erot resonances under normal incidence and extinction of Klein tunneling.The asymmetry,between barriers creates a transmission gap between confined states and free-electron continuum,allowing the large graphene asymmetric quantum well to be exploited as a photo-detector operating at mid-and far-infrared frequency regimes.
基金the National Natural Science Foundation of China (Grant No. 11104348)the School Pre-research of National University of Defense Technology (Grant No. JC11-02-08) for the financial support to this work
文摘A new type of ultraviolet photo-detectors （UVPDs） based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including 1-V characteristics and time response were studied in this work. SiC nan- owires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameters of SiC nanowires varied from 100 to 200 nm while they were some centimeters long and the SiC nanowires were with zinc blended cubic form （β-SiC） tested by X-ray diffraction. A bundle of nanowires was fixed onto two legs＇ base by conductive silver paste to form the UVPDs. The electrical measurement of the device showed a significant increase of current when the device was exposed to 254 nm UV light, and the rising time of the device is very short, but the falling time is relatively long. Our results show that the UVPDs based on SiC nanowires have excellent electrical and optical properties which can be potentially applied.
文摘A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.
文摘采用光离子化检测器(PID)传感器对挥发性有机化合物(VOC)气体进行检测,通过对PID的研究,自行设计适合本系统的PID检测器结构,并搭建了一套完整的检测系统。通过实验证明:所搭建的以PID检测器为核心的VOC气体检测系统已能够实现对VOC气体的定量检测。确定实验流量为160~170 m L/min,且在(0~5)×10-6内传感器响应呈线性关系。
