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PbS Quantum Dot Image Sensors Derived from Spent Lead-Acid Batteries via an Environmentally Friendly Route
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作者 Yuxin Tong Dijie Zhang +11 位作者 Zhaoyang Li Guang Hu Qingfang Zou Luna Xiao Weidong Wu Liang Huang Sha Liang Huabo Duan Jingping Hu Huijie Hou Jianbing Zhang Jiakuan Yang 《Engineering》 2025年第10期214-222,共9页
PbS quantum dot(QD)image sensors have emerged as promising chips for a wide range of infrared(IR)imaging applications due to their monolithic integration with silicon-based readout integrated circuits.However,avoiding... PbS quantum dot(QD)image sensors have emerged as promising chips for a wide range of infrared(IR)imaging applications due to their monolithic integration with silicon-based readout integrated circuits.However,avoiding primary toxic Pb usage and reducing the cost of PbS QDs remains crucial for widespread application.We present a novel cost-effective and environmentally friendly hydrometallurgical process for recovering PbCl_(2)from spent lead-acid battery paste to synthesize high-quality PbS QDs.The method recovers PbCl_(2)with a production ratio of 97%and a purity of 99.99%.PbS QDs and photodetectors synthesized from recycled PbCl_(2)(R-PbCl_(2))have comparable performance and quality to those made using commercial PbCl_(2).R-PbCl_(2)-derived photodetectors exhibit a high external quantum efficiency of 49.6%and a high specific detectivity of 6.95×10^(12)Jones compared to published studies.Additionally,based on R-PbCl_(2),a PbS QD image sensor with 640×512 resolution successfully discriminated common solvents.Moreover,through life-cycle assessment and economic cost analysis,this novel synthesis route offers great advantages in the environmentally friendly use of chemical reagents and reduces the production cost of PbS QDs by 23.2%compared to commercial PbCl_(2).Thus,this work not only contributes to the green recycling of spent lead paste but also provides a low-cost strategy for synthesizing PbS QDs and their optoelectronic application. 展开更多
关键词 pbs qds PHOTODETECTOR Infrared solarcells Spent leadpaste Life cycleassessment
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PbS QD-MWCNT异质结材料合成与光学特性
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作者 鲁得泂 李晓琳 +2 位作者 胡南涛 沈勇 魏良明 《微纳电子技术》 CAS 北大核心 2015年第1期25-30,共6页
以氯化铅(PbCl2)和升华硫(S)为前驱体,油胺为溶剂,使用热注入方法制备PbS量子点(QD)/多壁碳纳米管(MWCNT)异质结材料。对PbS QD/MWCNT复合纳米材料进行形貌、结构和元素分析,发现粒径约为14 nm的PbS QD紧密附着在MWCNT表面,而且PbS QD... 以氯化铅(PbCl2)和升华硫(S)为前驱体,油胺为溶剂,使用热注入方法制备PbS量子点(QD)/多壁碳纳米管(MWCNT)异质结材料。对PbS QD/MWCNT复合纳米材料进行形貌、结构和元素分析,发现粒径约为14 nm的PbS QD紧密附着在MWCNT表面,而且PbS QD的结晶性良好,Pb与S的原子百分比约为1∶1。对其进行光学特性分析,结果表明:PbS QD具有独特的红外吸收特性,在异质结材料中质量分数约占27%的PbS QD与MWCNT复合后,量子点与MWCNT之间存在相互作用,会对荧光光谱发射峰起到淬灭的影响,表明MWCNT与PbS QD之间存在光激载流子的迁移。该纳米复合材料在量子点修饰碳纳米管基的光电器件领域具有潜在的应用。 展开更多
关键词 pbs量子点(QD) 多壁碳纳米管(MWCNT) 纳米复合材料 光学特性 光生载流子
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High-performance near-Infrared computational spectrometer enabled by finely-tuned PbS quantum dots 被引量:1
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作者 Yang Yang Hanqiu Zhang +7 位作者 Qian Xue Wenjun Tang Haoming Gui Xiangrui Duan Daoli Zhang Liang Gao Jianbing Zhang Jiang Tang 《Nano Research》 2025年第5期519-529,共11页
The bulky footprint of near-infrared(NIR)spectrometers has been limiting their applications in portable and movable systems for probing molecular compositions and structures.Quantum dot(QD)computational spectrometers ... The bulky footprint of near-infrared(NIR)spectrometers has been limiting their applications in portable and movable systems for probing molecular compositions and structures.Quantum dot(QD)computational spectrometers are a promising strategy for miniaturized NIR spectrometers,whose performance is limited by the poor spectral encoding matrix and,ultimately,the poor quality of PbS QDs.Here,we show that the monodispersity and finely controlled absorption peak of PbS QDs are critical parameters affecting the spectral resolution and noise resistance.Thus,a facile synthesis of a series of monodisperse PbS QDs from a single batch is developed using cation exchange synthesis in a seeded-growth manner.All the as-synthesized PbS QDs have narrow size distributions of below 4%,and the peak intervals can be controlled to within 3 nm.Furthermore,stable PbS QD inks are prepared by considering the compatibility between QD ligands,solvents,and polymers.The PbS QD filter array is fabricated using a contact printing method,exhibiting supreme transmittance curves and a spectral encoding matrix.The filter array is coupled with an InGaAs image sensor to form the QD NIR computational spectrometer.Thanks to the high-quality PbS QDs,the QD spectrometer shows a high spectral resolution of 1.5 nm in a broad wavelength range of 900−1700 nm and excellent spectral reconstruction of narrow and broad spectra with fidelities of above 0.987.Additionally,the QD spectrometer is applied to distinguish materials and accurately measure the alcohol content of white wines,demonstrating the great potential for practical applications of QD NIR spectrometers. 展开更多
关键词 pbs quantum dots(qds) quantum dot(QD)ink quantum dot(QD)spectrometer near-infrared(NIR)spectrometer computational spectrometer
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Revealing the origin of the photo-instability to improve the performance of PbS quantum dot solar
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作者 Chunyan Wu Jinpeng Yang +4 位作者 Shuo Ding Tengzuo Huang Tao Sun Lei Qian Chaoyu Xiang 《Nano Research》 SCIE EI CSCD 2024年第12期10644-10648,共5页
Stability under light is critical for lead sulfide quantum dots(PbS QDs)in solar cell applications.To improve the stability of PbS QDs solar cells,the influence of the light illumination on the performance of the as-p... Stability under light is critical for lead sulfide quantum dots(PbS QDs)in solar cell applications.To improve the stability of PbS QDs solar cells,the influence of the light illumination on the performance of the as-prepared PbS QDs solar cells was carefully investigated.Combined with X-ray and ultraviolet photoelectron spectroscopies,it was revealed that the 1,2-ethanedithiol(EDT)ligands of the hole transport p-type PbS QDs reacted with the ligands of the PbS QDs active layer under light illumination.The reaction not only undermines the n-type characteristics of the active layer,but also increases the number of defects,leading to a serious deterioration in device performance.An interface layer was introduced to block the EDT penetration to avoid this issue,significantly improving the stability of the device under light irradiation.Moreover,the separation of carriers was also enhanced due to the better matching the energy level of the interface layer.The device with an interface layer yielded a power conversion efficiency of 12.55%and sustained to a long time light illumination. 展开更多
关键词 solar cell lead sulfide quantum dots(pbs qds) photo-instability INTERLAYER lght illumination
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