The samples were attained through altering the cooling system of producing glass-ceramics. The X-ray diffraction was used to test the stress value of different samples. The relation of the cooling system and internal ...The samples were attained through altering the cooling system of producing glass-ceramics. The X-ray diffraction was used to test the stress value of different samples. The relation of the cooling system and internal stress were also investigated. The experimental results show that the stress of glass-ceramic had a close relation with starting cool temperature. Above 800 ~C, glass-ceramic could be accelerated cooling and did not bring stress. Temperature between 500 ℃ and 800℃ was an important temperature range of the formation of stress in glass-ceramic, in which the glass-ceramic stress would change obviously. Cool system was the key on how to control and eliminate internal stress in order to reduce the destroy of materials crated by internal stress. In addition, glass particles size increase, glass-ceramic stress increase in consequent.展开更多
The influences of the PbO-B2O3-CuV2O6 （PBC） additives on the microwave dielectric properties of （Pb0.5Ca0.5） （Fe0.5Nb0.5）O3 （PCFN） ceramics were investigated as a function of sintering temperature from 950 ℃ ...The influences of the PbO-B2O3-CuV2O6 （PBC） additives on the microwave dielectric properties of （Pb0.5Ca0.5） （Fe0.5Nb0.5）O3 （PCFN） ceramics were investigated as a function of sintering temperature from 950 ℃ to 1 100 ℃. The sintering temperature of the specimens with the glass could be lowered from 1125 ℃ to 1 025℃ without the degradation of microwave dielectric properties. The microwave results showed that the dielectric constant cr was not significantly different while Qf values decreased with the increase of CuV206 content of PBC glass. For the specimens doped with PB-CV0.1 glass （81% PbO-9% B203-10% CuV2O6） and sintered at 1 025 ℃ for 3 h, the microwave dielectric properties of Qf=4 823 GHz, Cr=107.1 with TCF=＋15.03 ×10^-6/℃ were obtained.展开更多
The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential ther...The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.展开更多
基金National Natural Science Foundation of China(50272043)Natural Science Foundation of Hubei Province(2002AB077)+1 种基金Natural Science Foundation of Wuhan University of Technology(2003XJJ013)Natural Science Foundation of Key Laboratory of Silicate Materials Science and Engineering of Ministry of Education,Wuhan University of Technology
文摘The samples were attained through altering the cooling system of producing glass-ceramics. The X-ray diffraction was used to test the stress value of different samples. The relation of the cooling system and internal stress were also investigated. The experimental results show that the stress of glass-ceramic had a close relation with starting cool temperature. Above 800 ~C, glass-ceramic could be accelerated cooling and did not bring stress. Temperature between 500 ℃ and 800℃ was an important temperature range of the formation of stress in glass-ceramic, in which the glass-ceramic stress would change obviously. Cool system was the key on how to control and eliminate internal stress in order to reduce the destroy of materials crated by internal stress. In addition, glass particles size increase, glass-ceramic stress increase in consequent.
基金Project supported by the National Natural Science Foundation of China (Grant No.60578041)the National High Tech-nology Research and Development Program of China (Grant No.715-006-0060)
文摘The influences of the PbO-B2O3-CuV2O6 （PBC） additives on the microwave dielectric properties of （Pb0.5Ca0.5） （Fe0.5Nb0.5）O3 （PCFN） ceramics were investigated as a function of sintering temperature from 950 ℃ to 1 100 ℃. The sintering temperature of the specimens with the glass could be lowered from 1125 ℃ to 1 025℃ without the degradation of microwave dielectric properties. The microwave results showed that the dielectric constant cr was not significantly different while Qf values decreased with the increase of CuV206 content of PBC glass. For the specimens doped with PB-CV0.1 glass （81% PbO-9% B203-10% CuV2O6） and sintered at 1 025 ℃ for 3 h, the microwave dielectric properties of Qf=4 823 GHz, Cr=107.1 with TCF=＋15.03 ×10^-6/℃ were obtained.
基金Project(2007AA03Z0455) supported by the National High Technology Research and Development Program of ChinaProject supported by the Priority Academic Program Development of Jiangsu Higher Education Institution, China
文摘The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.
