A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTe substrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gap of ...A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTe substrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gap of the active region can be adjusted by controlling Eu composition (x value) in the active region.It was obtained that x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The results measured from SEM and electrical properties show that the Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure has a homogeneous morphology and an obvious junction character.展开更多
文摘A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTe substrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gap of the active region can be adjusted by controlling Eu composition (x value) in the active region.It was obtained that x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The results measured from SEM and electrical properties show that the Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure has a homogeneous morphology and an obvious junction character.
