Pb(Zr,Ti)O_(3)-Pb(Zn_(1/3)Nb_(2/3))O_(3) (PZT-PZN) based ceramics, as important piezoelectric materials, have a wide range of applications in fields such as sensors and actuators, thus the optimization of their piezoe...Pb(Zr,Ti)O_(3)-Pb(Zn_(1/3)Nb_(2/3))O_(3) (PZT-PZN) based ceramics, as important piezoelectric materials, have a wide range of applications in fields such as sensors and actuators, thus the optimization of their piezoelectric properties has been a hot research topic. This study investigated the effects of phase boundary engineering and domain engineering on (1-x)[0.8Pb(Zr_(0.5)Ti_(0.5))O_(3)-0.2Pb(Zn_(1/3)Nb_(2/3))O_(3)]-xBi(Zn_(0.5)Ti_(0.5))O_(3) ((1-x)(0.8PZT-0.2PZN)- xBZT) ceramic to obtain excellent piezoelectric properties. The crystal phase structure and microstructure of ceramic samples were characterized. The results showed that all samples had a pure perovskite structure, and the addition of BZT gradually increased the grain size. The addition of BZT caused a phase transition in ceramic samples from the morphotropic phase boundary (MPB) towards the tetragonal phase region, which is crucial for optimizing piezoelectric properties. By adjusting content of BZT and precisely controlling position of the phase boundary, the piezoelectric performance can be optimized. Domain structure is one of the key factors affecting piezoelectric performance. By using domain engineering techniques to optimize grain size and domain size, piezoelectric properties of ceramic samples have been significantly improved. Specifically, excellent piezoelectric properties (piezoelectric constant d_(33)=320 pC/N, electromechanical coupling factor kp=0.44) were obtained simultaneously for x=0.08. Based on experimental results and theoretical analysis, influence mechanisms of phase boundary engineering and domain engineering on piezoelectric properties were explored. The study shows that addition of BZT not only promotes grain growth, but also optimizes the domain structure, enabling the polarization reversal process easier, thereby improving piezoelectric properties. These research results not only provide new ideas for the design of high-performance piezoelectric ceramics, but also lay a theoretical foundation for development of related electronic devices.展开更多
以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT...以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT压电陶瓷在r(Zr)/r(Ti)=1.03下,进行Ba2+,La3+的A位复合取代后,即式子在Pb0.92Ba0.04La0.04(Ni1/3Nb2/3)y(Zn1/3Nb2/3)z Zrm Tin O3时压电性能最佳,其介电常数εT33/ε0=5 657,压电常数d33=709pC/N,机电耦合系数kp=0.69,品质因数Qm=45,居里温度TC=180.9℃。展开更多
基金National Natural Science Foundation of China (52202139, 52072178)。
文摘Pb(Zr,Ti)O_(3)-Pb(Zn_(1/3)Nb_(2/3))O_(3) (PZT-PZN) based ceramics, as important piezoelectric materials, have a wide range of applications in fields such as sensors and actuators, thus the optimization of their piezoelectric properties has been a hot research topic. This study investigated the effects of phase boundary engineering and domain engineering on (1-x)[0.8Pb(Zr_(0.5)Ti_(0.5))O_(3)-0.2Pb(Zn_(1/3)Nb_(2/3))O_(3)]-xBi(Zn_(0.5)Ti_(0.5))O_(3) ((1-x)(0.8PZT-0.2PZN)- xBZT) ceramic to obtain excellent piezoelectric properties. The crystal phase structure and microstructure of ceramic samples were characterized. The results showed that all samples had a pure perovskite structure, and the addition of BZT gradually increased the grain size. The addition of BZT caused a phase transition in ceramic samples from the morphotropic phase boundary (MPB) towards the tetragonal phase region, which is crucial for optimizing piezoelectric properties. By adjusting content of BZT and precisely controlling position of the phase boundary, the piezoelectric performance can be optimized. Domain structure is one of the key factors affecting piezoelectric performance. By using domain engineering techniques to optimize grain size and domain size, piezoelectric properties of ceramic samples have been significantly improved. Specifically, excellent piezoelectric properties (piezoelectric constant d_(33)=320 pC/N, electromechanical coupling factor kp=0.44) were obtained simultaneously for x=0.08. Based on experimental results and theoretical analysis, influence mechanisms of phase boundary engineering and domain engineering on piezoelectric properties were explored. The study shows that addition of BZT not only promotes grain growth, but also optimizes the domain structure, enabling the polarization reversal process easier, thereby improving piezoelectric properties. These research results not only provide new ideas for the design of high-performance piezoelectric ceramics, but also lay a theoretical foundation for development of related electronic devices.
文摘以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT压电陶瓷在r(Zr)/r(Ti)=1.03下,进行Ba2+,La3+的A位复合取代后,即式子在Pb0.92Ba0.04La0.04(Ni1/3Nb2/3)y(Zn1/3Nb2/3)z Zrm Tin O3时压电性能最佳,其介电常数εT33/ε0=5 657,压电常数d33=709pC/N,机电耦合系数kp=0.69,品质因数Qm=45,居里温度TC=180.9℃。
