基于p型衬底的DG SOI MOSFET器件,分析了PSP-SOI,BSIM-IMG和HiSIM-SOTB模型器件建模的可适用性。对3种模型的物理机理和数学方程进行研究,提取器件的直流特性及参数值。实验数据对比结果表明:相比PSP-SOI和HiSIM-SOTB,BSIM-IMG的仿真精...基于p型衬底的DG SOI MOSFET器件,分析了PSP-SOI,BSIM-IMG和HiSIM-SOTB模型器件建模的可适用性。对3种模型的物理机理和数学方程进行研究,提取器件的直流特性及参数值。实验数据对比结果表明:相比PSP-SOI和HiSIM-SOTB,BSIM-IMG的仿真精度分别提高了2.08%和7.10%。所以,BSIM-IMG更适用于DG SOI MOSFET器件直流特性建模。展开更多
A continuous and analytical surface potential model for SOI LDMOS, which accounts for automatic transitions between fully and partially-depleted statuses,is presented. The surface potential equation of the SOI de- vic...A continuous and analytical surface potential model for SOI LDMOS, which accounts for automatic transitions between fully and partially-depleted statuses,is presented. The surface potential equation of the SOI de- vice is solved by using the PSP′s accurate algorithm of surface potential,and the front and back surface potentials are obtained analytically as a function of gate and drain voltage. The formulations of inversion charge and body charge under the fully-depleted state have been modified. The continuous and analytical DC model for SOl LD- MOS is given based on PSP. The comparisons between simulation and measurements indicate that this model can predict the DC characteristics of SOI LDMOS accurately.展开更多
文摘基于p型衬底的DG SOI MOSFET器件,分析了PSP-SOI,BSIM-IMG和HiSIM-SOTB模型器件建模的可适用性。对3种模型的物理机理和数学方程进行研究,提取器件的直流特性及参数值。实验数据对比结果表明:相比PSP-SOI和HiSIM-SOTB,BSIM-IMG的仿真精度分别提高了2.08%和7.10%。所以,BSIM-IMG更适用于DG SOI MOSFET器件直流特性建模。
文摘A continuous and analytical surface potential model for SOI LDMOS, which accounts for automatic transitions between fully and partially-depleted statuses,is presented. The surface potential equation of the SOI de- vice is solved by using the PSP′s accurate algorithm of surface potential,and the front and back surface potentials are obtained analytically as a function of gate and drain voltage. The formulations of inversion charge and body charge under the fully-depleted state have been modified. The continuous and analytical DC model for SOl LD- MOS is given based on PSP. The comparisons between simulation and measurements indicate that this model can predict the DC characteristics of SOI LDMOS accurately.
