An in-built N^(+)pocket electrically doped tunnel field-effect transistor(ED-TFET)-based biosensor has been reported for the first time.The proposed device begins with a PN junction structure with a control gate(CG)an...An in-built N^(+)pocket electrically doped tunnel field-effect transistor(ED-TFET)-based biosensor has been reported for the first time.The proposed device begins with a PN junction structure with a control gate(CG)and two polarity gates(PG1 and PG2).Utilizing the polarity bias concept,a narrow N^(+)pocket is formed between the source and channel without the need for additional doping steps,achieved through biasing PG1 and PG2 at-1.2 V and 1.2 V,respectively.This method not only addresses issues related to doping control but also eliminates constraints associated with thermal budgets and simplifies the fabrication process compared to traditional TFETs.To facilitate biomolecule sensing within the device,a nanogap cavity is formed in the gate dielectric by selectively etching a section of the polarity gate dielectric layer toward the source side.The investigation into the presence of neutral and charged molecules within the cavities has been conducted by examining variations in the electrical properties of the proposed biosensor.Key characteristics assessed include drain current,energy band,and electric field distribution.The performance of the biosensor is measured using various metrics such as drain current(I_(DS)),subthreshold swing(SS),threshold voltage(V_(TH)),drain current ratio(I_(ON)/I_(OFF)).The proposed in-built N^(+)pocket ED-TFET-based biosensor reaches a peak sensitivity of 1.08×10~(13)for a neutral biomolecule in a completely filled nanogap with a dielectric constant of 12.Additionally,the effects of cavity geometry and different fill factors(FFs)on sensitivity are studied.展开更多
A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the...A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed memory cell can be operated at nanosecond range. The static and dynamic power dissipations were also studied, which indicated the availability of the proposed memory cell for VLS1 applications. Moreover, the memory cell is compatible with CMOS process, has little impact from process variation, and has good reliability.展开更多
A two-port capacitorless PNPN device with high density,high speed and low power memory fabricated using standard CMOS technology is presented.Experiments and calibrated simulations were conducted which prove that this...A two-port capacitorless PNPN device with high density,high speed and low power memory fabricated using standard CMOS technology is presented.Experiments and calibrated simulations were conducted which prove that this new memory cell has a high operation speed（ns level）,large read current margin（read current ratio of 10~4×）,low process variation,good thermal reliability and available retention time（190 ms）.Furthermore,the new memory cell is free of the cyclic endurance/reliability problems induced by hot-carrier injection due to the gateless structure.展开更多
基金Project supported by the Ministry of Education’s Supply and Demand Matching Employment and Education Project(Grant No.2024110776329)。
文摘An in-built N^(+)pocket electrically doped tunnel field-effect transistor(ED-TFET)-based biosensor has been reported for the first time.The proposed device begins with a PN junction structure with a control gate(CG)and two polarity gates(PG1 and PG2).Utilizing the polarity bias concept,a narrow N^(+)pocket is formed between the source and channel without the need for additional doping steps,achieved through biasing PG1 and PG2 at-1.2 V and 1.2 V,respectively.This method not only addresses issues related to doping control but also eliminates constraints associated with thermal budgets and simplifies the fabrication process compared to traditional TFETs.To facilitate biomolecule sensing within the device,a nanogap cavity is formed in the gate dielectric by selectively etching a section of the polarity gate dielectric layer toward the source side.The investigation into the presence of neutral and charged molecules within the cavities has been conducted by examining variations in the electrical properties of the proposed biosensor.Key characteristics assessed include drain current,energy band,and electric field distribution.The performance of the biosensor is measured using various metrics such as drain current(I_(DS)),subthreshold swing(SS),threshold voltage(V_(TH)),drain current ratio(I_(ON)/I_(OFF)).The proposed in-built N^(+)pocket ED-TFET-based biosensor reaches a peak sensitivity of 1.08×10~(13)for a neutral biomolecule in a completely filled nanogap with a dielectric constant of 12.Additionally,the effects of cavity geometry and different fill factors(FFs)on sensitivity are studied.
文摘A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed memory cell can be operated at nanosecond range. The static and dynamic power dissipations were also studied, which indicated the availability of the proposed memory cell for VLS1 applications. Moreover, the memory cell is compatible with CMOS process, has little impact from process variation, and has good reliability.
文摘A two-port capacitorless PNPN device with high density,high speed and low power memory fabricated using standard CMOS technology is presented.Experiments and calibrated simulations were conducted which prove that this new memory cell has a high operation speed（ns level）,large read current margin（read current ratio of 10~4×）,low process variation,good thermal reliability and available retention time（190 ms）.Furthermore,the new memory cell is free of the cyclic endurance/reliability problems induced by hot-carrier injection due to the gateless structure.
