The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation...The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation supported by experimental evidence remains lacking. This work investigates the effects of fluorine incorporation and electrothermal annealing(ETA) on the current transport process at Ni/β-Ga_(2)O_(3) Schottky contacts. X-ray photoelectron spectroscopy and first-principles calculations confirm the presence of fluorine substitutions for oxygen and oxygen vacancies and their lowering effect on the Schottky barrier heights. Additionally, accurate electrothermal hybrid TCAD simulations validates the extremely short-duration high temperatures(683 K) induced by ETA, which facilitates lattice rearrangement and reduces interface trap states. The interface trap states are quantitatively resolved through frequency-dependent conductance technique, showing the trap density(DT)reduction from(0.88-2.48) × 10^(11) cm^(-2)·eV^(-1) to(0.46-2.09) × 10^(11) cm^(-2)·eV^(-1). This investigation offers critical insights into the β-Ga_(2)O_(3) contacts with the collaborative treatment and solids the promotion of high-performance β-Ga_(2)O_(3) power devices.展开更多
The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation ...The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.展开更多
Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were o...Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were obtained using Monte Carlo simulations.For the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest Isc.The overall electrical performance of PN junctions is better than that of Schottky diodes.The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.展开更多
A new analytical model for reverse characteristics of 4H-SiC merged PN Sehottky diodes （MPS or 3BS） is developed. To accurately calculate the reverse characteristics of the 4H SiC MPS diode, the relationship between...A new analytical model for reverse characteristics of 4H-SiC merged PN Sehottky diodes （MPS or 3BS） is developed. To accurately calculate the reverse characteristics of the 4H SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel-Kramers-Brillouin （WKB） theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing （S） and P-junction depth （Xj） on the characteristics of 4H-SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.展开更多
Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
There is limited research reported on the multiple loss mechanism of electromagnetic waves(EMW)and the development of interface models.Dielectric loss and magnetic loss,as the two primary attenuation mechanisms in EMW...There is limited research reported on the multiple loss mechanism of electromagnetic waves(EMW)and the development of interface models.Dielectric loss and magnetic loss,as the two primary attenuation mechanisms in EMW absorbers,still pose challenges,especially in elucidating the correlation between composition,morphology,interface,and performance.Here,we construct 3D hierarchical porous conducting network structures and Schottky heterojunctions(MoNi_(4)@NC-NiFe_(2)O_(4)@NC)with a high density of defects,using trimetallic NiMoFe-MOFs.Synergistic enhancement of the dielectric and magnetic losses is realized through manipulation of the defects,interfaces,phase engineering,and magnetic resonance.In particular,the even dispersion of magnetic MoNi_(4) and NiFe_(2)O_(4)nanoparticles(NPs)within the carbon matrix triggers the creation of multiple heterogeneous interfaces.These inseparable interfaces,along with oxygen vacancies,play a role in enhancing dielectric polarization,while the closely spaced interactions among magnetic units contribute to magnetic loss.After optimizing the interfacial structure,NiFe_(2)O_(4)/MoNi_(4)-NC exhibits remarkable EMW absorption properties.A reflection loss(RL)value of-67.91 dB can be achieved at an ultra-thin thickness of 1.95 mm,and the effective absorption bandwidth(EAB,RL≤-10 dB)is as high as 5.76 GHz.Furthermore,we conducted radar scattering cross-section(RCS)simulations using computer simulation technology(CST)software,which revealed that NiFe_(2)O_(4)/MoNi_(4)-NC exhibits an RCS reduction value of 39.1 dB m^(2).Hence,this work provides comprehensive guidance for the construction of Schottky heterojunctions for lightweight EMW absorbers from a mechanistic point of view.展开更多
Nitrate pollution poses a significant environmental challenge,and photocatalytic nitrate reduction has garnered considerable attention due to its efficiency and environmental advantages.Among these,the development of ...Nitrate pollution poses a significant environmental challenge,and photocatalytic nitrate reduction has garnered considerable attention due to its efficiency and environmental advantages.Among these,the development of Schottky junctions shows considerable potential for practical applications.However,the impact of metal nanoparticle size within Schottky junctions on photocatalytic nitrate reduction remains largely unexplored.In this study,we propose a novel method to modulate metal nanoparticle size within Schottky junctions by controlling light intensity during the photodeposition process.Smaller Au nanoparticles were found to enhance electron accumulation at active sites by promoting charge transfer from COF to Au,thereby improving internal electron transport.Additionally,the Schottky barrier effectively suppressed reverse electron transfer while enhancing NO_(3)^(–)adsorption and activation.The Au_(2-)COF exhibited remarkable nitrate reduction performance,achieving an ammonia yield of 382.48μmol g^(–1)h^(–1),5.7 times higher than that of pure COF.This work provides novel theoretical and practical insights into using controlled light intensity to regulate metal nanoparticle size within Schottky junctions,thereby enhancing photocatalytic nitrate reduction.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 62174019, 52302046, L2424216)the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2024A1515012139)+2 种基金the Major Program (JD) of Hubei Province (Grant No. 2023BAA009)the Knowledge Innovation Program of Wuhan-Shuguang Project (Grant No. 2023010201020262)the Basic Research Program of Jiangsu (Grant No. BK20230268)。
文摘The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation supported by experimental evidence remains lacking. This work investigates the effects of fluorine incorporation and electrothermal annealing(ETA) on the current transport process at Ni/β-Ga_(2)O_(3) Schottky contacts. X-ray photoelectron spectroscopy and first-principles calculations confirm the presence of fluorine substitutions for oxygen and oxygen vacancies and their lowering effect on the Schottky barrier heights. Additionally, accurate electrothermal hybrid TCAD simulations validates the extremely short-duration high temperatures(683 K) induced by ETA, which facilitates lattice rearrangement and reduces interface trap states. The interface trap states are quantitatively resolved through frequency-dependent conductance technique, showing the trap density(DT)reduction from(0.88-2.48) × 10^(11) cm^(-2)·eV^(-1) to(0.46-2.09) × 10^(11) cm^(-2)·eV^(-1). This investigation offers critical insights into the β-Ga_(2)O_(3) contacts with the collaborative treatment and solids the promotion of high-performance β-Ga_(2)O_(3) power devices.
文摘The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.
基金supported by the National Major Scientific Instruments and Equipment Development Projects(No.2012YQ240121)National Natural Science Foundation of China(No.11075064)
文摘Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were obtained using Monte Carlo simulations.For the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest Isc.The overall electrical performance of PN junctions is better than that of Schottky diodes.The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.
基金Project supported by the Xi’an Applied Materials Innovation Fund (Grant No XA-AM-200702)
文摘A new analytical model for reverse characteristics of 4H-SiC merged PN Sehottky diodes （MPS or 3BS） is developed. To accurately calculate the reverse characteristics of the 4H SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel-Kramers-Brillouin （WKB） theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing （S） and P-junction depth （Xj） on the characteristics of 4H-SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
基金supported by the National Natural Science Foundation of China(No.22269010)the Jiangxi Provincial Natural Science Foundation(No.20224BAB214021).
文摘There is limited research reported on the multiple loss mechanism of electromagnetic waves(EMW)and the development of interface models.Dielectric loss and magnetic loss,as the two primary attenuation mechanisms in EMW absorbers,still pose challenges,especially in elucidating the correlation between composition,morphology,interface,and performance.Here,we construct 3D hierarchical porous conducting network structures and Schottky heterojunctions(MoNi_(4)@NC-NiFe_(2)O_(4)@NC)with a high density of defects,using trimetallic NiMoFe-MOFs.Synergistic enhancement of the dielectric and magnetic losses is realized through manipulation of the defects,interfaces,phase engineering,and magnetic resonance.In particular,the even dispersion of magnetic MoNi_(4) and NiFe_(2)O_(4)nanoparticles(NPs)within the carbon matrix triggers the creation of multiple heterogeneous interfaces.These inseparable interfaces,along with oxygen vacancies,play a role in enhancing dielectric polarization,while the closely spaced interactions among magnetic units contribute to magnetic loss.After optimizing the interfacial structure,NiFe_(2)O_(4)/MoNi_(4)-NC exhibits remarkable EMW absorption properties.A reflection loss(RL)value of-67.91 dB can be achieved at an ultra-thin thickness of 1.95 mm,and the effective absorption bandwidth(EAB,RL≤-10 dB)is as high as 5.76 GHz.Furthermore,we conducted radar scattering cross-section(RCS)simulations using computer simulation technology(CST)software,which revealed that NiFe_(2)O_(4)/MoNi_(4)-NC exhibits an RCS reduction value of 39.1 dB m^(2).Hence,this work provides comprehensive guidance for the construction of Schottky heterojunctions for lightweight EMW absorbers from a mechanistic point of view.
文摘Nitrate pollution poses a significant environmental challenge,and photocatalytic nitrate reduction has garnered considerable attention due to its efficiency and environmental advantages.Among these,the development of Schottky junctions shows considerable potential for practical applications.However,the impact of metal nanoparticle size within Schottky junctions on photocatalytic nitrate reduction remains largely unexplored.In this study,we propose a novel method to modulate metal nanoparticle size within Schottky junctions by controlling light intensity during the photodeposition process.Smaller Au nanoparticles were found to enhance electron accumulation at active sites by promoting charge transfer from COF to Au,thereby improving internal electron transport.Additionally,the Schottky barrier effectively suppressed reverse electron transfer while enhancing NO_(3)^(–)adsorption and activation.The Au_(2-)COF exhibited remarkable nitrate reduction performance,achieving an ammonia yield of 382.48μmol g^(–1)h^(–1),5.7 times higher than that of pure COF.This work provides novel theoretical and practical insights into using controlled light intensity to regulate metal nanoparticle size within Schottky junctions,thereby enhancing photocatalytic nitrate reduction.
