A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.
文摘A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.
