The ultraviolet（UV） photoresponses of ZnO nanorods directly grown on and between two micro Au-electrodes by using electric-field-assisted wet chemical method are measured comprehensively under different conditions, ...The ultraviolet（UV） photoresponses of ZnO nanorods directly grown on and between two micro Au-electrodes by using electric-field-assisted wet chemical method are measured comprehensively under different conditions, including ambient environment, applied bias voltage, gate voltage and temperature. Experimental results indicate that the photoresponses of the ZnO nanorods can be modulated by surface oxygen adsorptions, applied voltages, as well as temperatures. A model taking into account both surface adsorbed oxygen and electron-hole activities inside ZnO nanorods is proposed. The enhancement effect of the bias voltage on photoresponse is also analyzed. Experimental results shows that the UV response time（to 63%） of ZnO nanorods in air and at 59°C could be shortened from 34.8 s to 0.24 s with a bias of 4 V applied between anode and cathode.展开更多
Tuning the photoresponse of monolayer MoS_(2) could extend its potential application in many fields,however,it is still a challenge.In this study,CsPbBr_(3) nanoparticles were prepared and spin-coated on the surface o...Tuning the photoresponse of monolayer MoS_(2) could extend its potential application in many fields,however,it is still a challenge.In this study,CsPbBr_(3) nanoparticles were prepared and spin-coated on the surface of monolayer MoS_(2) to fabricate hybrid CsPbBr_(3)/MoS_(2) photodetectors.By combing the photoelectrical property of the CsPbBr_(3),the synergistic effect has been systematically studied from its carrier mobility,photoresponse and detectivity.It was found that nanofilm-coating of CsPbBr_(3)would impede the photoelectric performance due to the electron-hole recombination facilitated by the defects at the interface of C PbBr_(3) and MoS_(2) films.While the nanoparticles decorating was observed to significantly improve the conductivity of the monolayer Mo S_(2),which also increased the on/off ratio of the MoS_(2) transistor from 8.2×10~3 to 4.4×10^(4),and enhanced the carrier mobility from 0.090 cm^(2)V^(-1)s^(-1)to 0.202 cm^(2)V^(-1)s^(-1),ascribing to a mixed electron recombination-injection process.Furthermore,the CsPbBr_(3) nanofilm would decrease the responsivity to 136 and 178 A/W under the light wavelength of 400 and 500 nm,respectively,while decorating CsPbBr_(3) nanoparticles improve the photoresponse to 948 and 883 A/W with the detectivity at the level of 10^(11)Jones.This work may provide an easy and cost-efficient way to tune the photoresponse of MoS_(2) photodetectors.展开更多
According to optical diffraction limit, the photoresponsity of nanowire(NW)-based photodetector exponentially decreases when its NW diameter reduces to the range of deep subwavelength. In this paper, we demonstrate a ...According to optical diffraction limit, the photoresponsity of nanowire(NW)-based photodetector exponentially decreases when its NW diameter reduces to the range of deep subwavelength. In this paper, we demonstrate a photoresponse-enhanced method of the deep-subwavelength Ga As NW photodetector by using a plasmon-driven dipole antenna. Considering that the enhancement is extremely influenced by the shape and size of antenna, the structure of antenna is optimized by finite difference time domain(FDTD) solutions. The optimal structure of antenna optimizes the responsivity-enhanced factors to 1123.3 and 224.7 in NW photodetectors with NW diameters of 20 nm and 60 nm, respectively. This photoresponse-enhanced method is promising for easy-integration high-performance nanoscale photodetectors.展开更多
A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junction...A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junctions.The transient current equation of the two junctions is calculated by the current-voltage formula of the p-n junction,and the photoresponse curve of the PPD is calculated and drawn by the numerical solution.Simulation results show that the dynamic model successfully restores the entire process of the electron accumulation in the PPD.The difference between the full well capacity(FWC)values which were calculated by the proposed model and the simulation results is less than 5%,which is much smaller than the error of 40%for the traditional model.展开更多
Chamaenerion spp.( Onagraceae) are a class of ecological restoration medicinal herbs. Mount Shergyla has three species and one variant of Chamaenerion. Studying their photoresponse characteristics and elucidating thei...Chamaenerion spp.( Onagraceae) are a class of ecological restoration medicinal herbs. Mount Shergyla has three species and one variant of Chamaenerion. Studying their photoresponse characteristics and elucidating their adaptation and physiological response to the photosynthetic characteristics of the environment is the basis for the development and protection of the plant resources of the genus Chamaenerion. In this experiment,Li-6400 portable photosynthesis instrument was used to study the photoresponse characteristics of C. spp. in Mount Shergyla,and the photoresponse curves were fitted using a right-angle hyperbolic correction model. The results showed that Chamaenerion conspersum has low light compensation point[4. 931 μmol/( m^2·s) ],high light saturation point[1 000 μmol/( m^2·s) ],and strongest adaptability to light,which is one of the determinants of its distribution at each elevation of Mount Shergyla. Chamaenerion angustifolium subsp. circumvagum has higher light compensation point [11. 848 μmol/( m^2·s) ],low light saturation point[800 μmol/( m^2·s) ],and weakest adaptability to light,and it is a typical sciophilous plant. This result is consistent with the habitats( Rhododendron wardii shrub and spruce forest margin) that C. angustifolium are distributed in Mount Shergyla. C. angustifolium and Chamaenerion latifolium have higher light compensation points and higher light saturation points,suggesting that the adaptability of C. angustifolium and C. latifolium to the light environment is weak. This can also explain the narrow distribution of C. angustifolium and C. latifolium in Mount Shergyla. There are certain degree of differences in the responses of net photosynthetic rate( Pn),intercellular CO_2 concentration( Ci),stomatal conductance( Gs) and transpiration rate( Tr) of the three species and one variant of Chamaenerion to different photosynthetically active radiation( PAR). With the increase of light intensity,the Pn,Gs and Tr of Chamaenerion spp. increased significantly,and the Ci decreased. The Pn of C. conspersum and C. latifolium differed insignificantly,but they were both higher than that of C. angustifolium. The Pn of C. angustifolium subsp. circumvagum was the lowest. The Gs of C. conspersum and C. latifolium differed insignificantly,but they were both higher than that of C. angustifolium subsp. circumvagum. The Gs of C. angustifolium was the lowest. There was no obvious difference in Ci between C. angustifolium and C. latifolium,of which the Ci was both higher than that of C. conspersum. The Ci of C. angustifolium subsp. circumvagum was the lowest. C. angustifolium subsp. circumvagum had the highest Tr,followed by C. angustifolium and C. conspersum( no obvious difference),and C. latifolium had the lowest Tr. The light utilization efficiency of C. spp. ranked as C. angustifolium subsp. circumvagum < C. angustifolium < C. latifolium < C. conspersum. The light suppression phenomenon was evident in C. angustifolium,C. angustifolium subsp. circumvagum and C. latifolium. C. conspersum is most suitable for application under high light intensity conditions in Tibet. C. angustifolium,C. angustifolium subsp. circumvagum and C. latifolium should be shaded properly under conditions of high light intensity in the cultivation process,while C. conspersum needs to be supplemented with light during the cultivation process.展开更多
The development of solution strategies for Zinc oxide （ZnO） quantum dots provides a pathway to utilizing ZnO nanocrystal thin films in optoelectronic devices. In this work, quasi-spherical ZnO quantum dots with a di...The development of solution strategies for Zinc oxide （ZnO） quantum dots provides a pathway to utilizing ZnO nanocrystal thin films in optoelectronic devices. In this work, quasi-spherical ZnO quantum dots with a diameter of 5 nm are synthesized by using ethanol as a solvent. ZnO nanocrystal thin film is obtained by spin-coating ZnO quantum dots on a Au interdigital electrode （IDE）/AI203 substrate and annealing at different temperatures in order to yield the optimal pho- tosensitive on/off ratio of ZnO. For further enhancing the responsivity, ion sputtering is utilized to deposit Pt nanoparticles on the surface of ZnO nanocrystal thin film, the responsivity of the ZnO/Pt bilayer nanostructure increases from 0.07 A/W to 54 A/W, showing that the metal/inorganic nanocrystal bilayer nanostructure can be used to improve the performance of optoelectronic devices. The excellent properties of ZnO/Pt bilayer nanostructure have important applications in future electronic and optoelectronic devices.展开更多
Undoped ZnO nanostructures were deposited on SiO2/Si substrates via radio 11：equency magnetron sputtenng at different deposition temperatures （room temperature, 200, 300, and 400 ℃）. The prepared samples were anne...Undoped ZnO nanostructures were deposited on SiO2/Si substrates via radio 11：equency magnetron sputtenng at different deposition temperatures （room temperature, 200, 300, and 400 ℃）. The prepared samples were annealed at 500 ℃ for 2 h under an N2 flow. The structural, surface morphological, optical, and photoresponse characteristics of ZnO nanostructures as deposited and after annealing were then investigated. The energy bandgaps of all samples after annealing （3.22-3.28 eV） decreased compared with those of the as-deposited specimens. The barrier height increased when the deposition temperature increased and reached 0.77 eV at 400 ℃ after annealing with a leakage current of 0.17 gA at a 5 V bias. The UV photodetector device which was deposited at the optimal temperature of 300 ℃, has 12.51 × 10^3% pho- tosensitivity, 2.259 pA dark current, 0.508 s response time, and 0.466 s recovery time. The dark current significantly decreased for all samples after annealing. The proposed UV photodetectors exhibit high performance, high photosensi- tivity, shorter response and recovery times, and excellent stability at lower bias voltages of 5 and 2 V.展开更多
Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the...Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the angle-dependent photoresponse of ReS_(2) are still very limited.Here,we studied the anisotropic photoresponse of layered ReS_(2) phototransistors in depth.Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies,which are along 120°and 90°,respectively.We further measured the angle-resolved photoresponse of a ReS_(2) transistor with 6 diagonally paired electrodes.The maximum photoresponsivity exceeds 0.515 A·W^(-1) along b-axis,which is around 3.8 times larger than that along the direction perpendicular to b axis,which is consistent with the optical anisotropic directions.The incident wavelength-and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS_(2) interaction,which explains the anisotropic photoresponse.We also observed angle-dependent photoresistive switching behavior of the ReS_(2) transistor,which leads to the formation of angle-resolved phototransistor memory.It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light.This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks(ANN)in a wide spectral range of sensitivity provided by polarized light.展开更多
Bi_(2)O_(2)Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties.However,it is still a great challenge to construct the heterostructures with ...Bi_(2)O_(2)Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties.However,it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi_(2)O_(2)Se nanosheets.Here,a two-step chemical vapor deposition(CVD)route was used to directly grow the CsPbBr_(3)nanoplate-Bi_(2)O_(2)Se nanosheet hetero structures.The CsPbBr_(3)nanoplates were selectively grown on the Bi_(2)O_(2)Se nanosheet along the edges,where the dangling bonds provide the nucleation sites.The epitaxial relationships between CsPbBr3 and Bi_(2)O_(2)Se were determined as[200]_(Bi_(2)O_(2)Se)‖[110]_(CsPbBr_(3))and[110]_(Bi_(2)O_(2)Se)‖[200]_(CsPbBr_(3))by transmission electron microscopy characterization.The photoluminescence(PL)results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-Ⅰband arrangement at CsPbBr_(3)/Bi_(2)O_(2)Se interface,which was confirmed by ultraviolet photoelectron spectroscopy(UPS)and Kelvin probe measurements,and makes the photogenerated carriers transfer from CsPbBr_(3)to Bi_(2)O_(2)Se.Importantly,the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi_(2)O_(2)Se sheets,and the fast rise and decay time in microsecond.These results indicate that the direct epitaxy of the CsPbBr_(3)plates on the Bi_(2)O_(2)Se sheet may improve the optoelectronic performance of Bi_(2)O_(2)Se based devices.展开更多
The research aimed to analyze changes in photosynthetic characteristics of Paeonia ludlowii under saline-alkali stress,and annual seedlings of P.ludlowii were taken as the materials.Photoresponse process of P.ludlowii...The research aimed to analyze changes in photosynthetic characteristics of Paeonia ludlowii under saline-alkali stress,and annual seedlings of P.ludlowii were taken as the materials.Photoresponse process of P.ludlowii leaves under saline-alkali stress was simulated,and different models were used to fit photoresponse curve.The results showed that P n of P.ludlowii leaves showed the trend of first rising and then declining with PAR increased under saline-alkali stress;both G s and T r showed a rising trend with PAR increased;C i showed the trend of first declining and then rising with PAR increased.Photoresponse curve fitted by modified rectangular hyperbolic model had the best effect,and it was the optimal fitting model.P.ludlowii could adapt to saline-alkali stress in lower concentration,showing that P.ludlowii could be introduced and cultivated in saline-alkali land at a lower level.展开更多
We have developed an experimental setup that has been proven suitable for the study of photoresponse of high Tc superconductors. The distinguish feature of this experimental setup lies mainly in the data acquisition s...We have developed an experimental setup that has been proven suitable for the study of photoresponse of high Tc superconductors. The distinguish feature of this experimental setup lies mainly in the data acquisition system which is equipped with computer as well as the IEEE-488 interface bus. which ensures the accuracy to experimental results. Using the experimental setup, the optical response to laser radiation in high-Tc superconductors has been examined, both of bolometric effect and nonequilibrium optical response are revealed.展开更多
Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photolumine...Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580 nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400 nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.展开更多
Photoresponsive smart materials,which exhibit swift or instantaneous responses to external light stimuli,are pivotal for advancing the development of novel smart devices.Among these materials,photoresponsive tetracoor...Photoresponsive smart materials,which exhibit swift or instantaneous responses to external light stimuli,are pivotal for advancing the development of novel smart devices.Among these materials,photoresponsive tetracoordinate arylboron com-pounds emerge as prominent molecular systems,owing to their captivating photochemical mechanisms and photophysical transformations.In recent years,these molecules have experienced notable progress,leading to the emergence of numerous organic boron photoresponsive molecular systems with innovative structures and exceptional performance.In this comprehensive review,we present a thorough examination of the latest advancements in the field,systematically elucidating the design strategies and structure-activity relationships of these mol-ecules.Furthermore,we delve into the photoresponse mechanisms of various molecules and summarize their unique characteristics.Ultimately,we analyze the challenges,opportunities,and prospects encountered in this exciting field of research.展开更多
In the era of big data and artificial intelligence,optical neural networks(ONNs)have emerged as a promising alternative to conventional electronic approaches,offering superior parallelism,ultrafast processing speeds,a...In the era of big data and artificial intelligence,optical neural networks(ONNs)have emerged as a promising alternative to conventional electronic approaches,offering superior parallelism,ultrafast processing speeds,and high energy efficiency[1-3].However,a major bottleneck in the practical implementation of ONNs is the absence of effective nonlinear activation functions.Self-driven photodetectors have emerged as versatile optical to electrical converters,opening innovative avenues for energy-effective and flexibly integrated activation functions in ONNs through their reconfigurable optoelectronic nonlinearity.展开更多
Short-wavelength infrared(SWIR,1000-3000 nm)light detection is critical for emerging technologies such as non-invasive medical diagnostics,autonomous navigation,and secure optical communications[1].Currently,commercia...Short-wavelength infrared(SWIR,1000-3000 nm)light detection is critical for emerging technologies such as non-invasive medical diagnostics,autonomous navigation,and secure optical communications[1].Currently,commercial SWIR photodetectors are predominantly based on epitaxially grown groupⅢ-Ⅴinorganic semiconductors(e.g.,InGaAs,InP),which suffer from complex and costly processing,limited spectral tunability,and mechanical rigidity[2].In contrast,solution-processed organic photodetectors(OPDs)offer distinct advantages,including low manufacturing costs,tunable spectral response,intrinsic flexibility,and facile integration with silicon read-out integrated circuitry(ROIC)[3-5].展开更多
The application potential of tuning two-dimensional materials(2DMs)characteristics through strain engineering for wearable and flexible devices has been widely recognized.However,the challenges lie in achieving accura...The application potential of tuning two-dimensional materials(2DMs)characteristics through strain engineering for wearable and flexible devices has been widely recognized.However,the challenges lie in achieving accurate deterministic positioning,spatial modulation,controllable magnitude,and permanent nanostrains.Herein,motivated by the skin swelling caused by mosquito bites,a technique utilizing the heated nanotip in atomic force microscopy for thermomechanical nanoindentation is demonstrated.This method enables precise positioning of localized nanostrain and regulation of bandgap in tungsten diselenide(WSe_(2))/molybdenum disulfide(MoS_(2))heterobilayer transferred onto a flexible polymethyl methacrylate film.The magnitude of strain in the WSe_(2)/MoS_(2) heterobilayer can be controlled by adjusting the parameters of nanoindentation,leading to a spatially modulated average strain of up to 2.5%on the ring-shaped expansion structure(RES).The local bandgap of the WSe_(2)/MoS_(2) heterobilayer is spatially regulated through three distinct regions.In particular,the RES exhibits the largest extent of bandgap modulation,accompanied by a significant change of~12 meV.The nanostrain significantly enhances the photoresponse speed of the photodetector device.For instance,under illumination from a 405 nm wavelength-laser,the rise time and fall time are reduced by 75%and 87.52%,respectively,compared to the device without strain.Similarly,under illumination from a 532 nm wavelength-laser,the rise time and fall time are reduced by 66.67%and 80.60%,respectively.These findings demonstrate that the proposed method serves as a versatile way for improving the photoresponse of optoelectronic devices based on 2DMs.展开更多
Multicolor photodetection,essential for applications in infrared imaging,environ-mental monitoring,and spectral analysis,is often limited by the narrow bandgaps of conventional materials,which struggle with speed,sens...Multicolor photodetection,essential for applications in infrared imaging,environ-mental monitoring,and spectral analysis,is often limited by the narrow bandgaps of conventional materials,which struggle with speed,sensitivity,and room-temperature operation.We address these issues with a multicolor uncooled photo-detector based on an asymmetric Au/SnS/Gr vertical heterojunction with inversion-symmetry breaking.This design utilizes the complementary bandgaps of SnS and graphene to enhance the efficiency of carriers'transport through consis-tently oriented built-in electric fields,achieving significant advancements in direc-tional photoresponse.The device demonstrates highly sensitive photoelectric detection performance,such as a responsivity(R)of 55.4–89.7 A W^(–1)with rapid response times of approximately 104μs,and exceptional detectivity(D^(*))of 2.38×10^(10)Jones-8.19×10^(13)Jones from visible(520 nm)to infrared(2000 nm)light,making it suitable for applications demanding an imaging resolution of-0.5 mm.Additionally,the comparative analysis reveals that the asymmetric ver-tical heterojunction outperforms its counterparts,exhibiting approximately 9-fold the photoresponse of symmetric vertical heterojunction and almost 100-fold that of symmetric horizontal heterojunction.This highly sensitive multicolor detector holds significant promise for applications in advanced versatile object detection and imaging recognition systems.展开更多
All inorganic perovskite CsPbX_(3)with excellent optical properties and a tunable bandgap is a potential candidate for optoelectronic applications,and the amplified spontaneous emission(ASE)is normally reported in low...All inorganic perovskite CsPbX_(3)with excellent optical properties and a tunable bandgap is a potential candidate for optoelectronic applications,and the amplified spontaneous emission(ASE)is normally reported in low-dimensional structures where the quantum confinement enhances ASE.Herein,we not only demonstrate the ASE in millimeter size CsPbCl_(x)Br_(3-x)crystal with a high defect concentration,but also tune the emission wavelength from the green band to blue band through the ion exchange of Br with Cl.The ASE centered at∼456 nm is probed at 50 K with a threshold of 106μJ/cm 2.Furthermore,a metal-semiconductor-metal(MSM)structure CsPbCl_(x)Br_(3-x)photodetector is fabricated and shows a distinct response to lights from UV to the blue band;the response spectrum range is quite different from the narrow band(∼30 nm)response of the CsPbBr_(3)photodetector induced by a charge collection narrowing(CCN)mechanism.The CsPbCl_(x)Br_(3-x)photodetector also exhibits fast response speeds with a rise time of 96μs and a decay time of 34μs,indicating the defects have limited influence on the transportation speed of the photo-generated carriers.展开更多
The realization of controllable polarity photoresponse within a single device is a crucial advancement for simulating biological bipolar vision cells to drive the development of next-generation optoelectronic technolo...The realization of controllable polarity photoresponse within a single device is a crucial advancement for simulating biological bipolar vision cells to drive the development of next-generation optoelectronic technologies.Nevertheless,current polarity photodetectors face significant challenges in fully suppressing symmetric photocurrent cancellation and optimizing carrier transport efficiency.Here,we propose a graphene-intercalated MoS_(2)/MoTe_(2)heterojunction,featuring a tailorable built-in electric field and a high efficiency transport channel.Spatially resolved photocurrent reveals that the controllable polarity photoresponse originates from the bias-dependent equivalent built-in electric field of MoS_(2)/MLG/MoTe_(2)heterojunction.The controllable polarity photoresponse realizes a large-area uniform“heart-shaped”photocurrent region.In enhanced polarity photoresponse mode,the photodetector exhibits broadband detection capabilities from visible(638 nm)to infrared(1550 nm)light,achieving a high responsivity of 18.1 A/W and an excellent detectivity of 2.8×10^(12)Jones,as well as fast response times of 94/119μs.Furthermore,precise imaging with a resolution better than 0.5 mm was successfully demonstrated,highlighting its polarity photoresponse for practical imaging applications.This work provides a new paradigm for controllable polarity photoresponse programmed by intercalated low-dimensional material structures,paving the way for next-generation intelligent sensing chips.展开更多
Achieving photochromism,photodeformation,and photoinduced room-temperature phosphorescence(RTP)simultaneously in a single type of moleculedoped film is a complex and challenging task.Here,we introduce an efficient des...Achieving photochromism,photodeformation,and photoinduced room-temperature phosphorescence(RTP)simultaneously in a single type of moleculedoped film is a complex and challenging task.Here,we introduce an efficient design strategy that utilizes dicarbonyl as a bridge linking between phenothiazine(PTZ)units,thereby enabling a synergistic multi-photoresponse upon photoactivation.Our study reveals that thin films of polyvinyl alcohol(PVA)doped with five PTZ derivatives(DPTZCn:n=1–5)show photoactivated RTP.Notably,the DPTZC1 variant in PVA film uniquely undergoes photoactivated macroscopic deformation and displays enhanced photoluminescence efficiency compared to its PTZ counterparts(DPTZCn:n=2–5)in PVA films.Further photophysical analysis indicates that the exceptional performance of DPTZC1 stems from the combined effects of keto-enol tautomerism and matrix rigidification,which also facilitate the generation of photoinduced radicals in DPTZC1 in the PVA film.We investigate the potential bionic applications of the versatile DPTZC1,providing insights into the design of intelligent,photodriven materials based on RTP.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.91123017)
文摘The ultraviolet（UV） photoresponses of ZnO nanorods directly grown on and between two micro Au-electrodes by using electric-field-assisted wet chemical method are measured comprehensively under different conditions, including ambient environment, applied bias voltage, gate voltage and temperature. Experimental results indicate that the photoresponses of the ZnO nanorods can be modulated by surface oxygen adsorptions, applied voltages, as well as temperatures. A model taking into account both surface adsorbed oxygen and electron-hole activities inside ZnO nanorods is proposed. The enhancement effect of the bias voltage on photoresponse is also analyzed. Experimental results shows that the UV response time（to 63%） of ZnO nanorods in air and at 59°C could be shortened from 34.8 s to 0.24 s with a bias of 4 V applied between anode and cathode.
基金financially supported by the National Natural Science Foundation of China (Nos. 52002254, 52272160)Sichuan Science and Technology Foundation (Nos. 2020YJ0262, 2021YFH0127, 2022YFH0083, 2022YFSY0045)+2 种基金the Chunhui plan of Ministry of Education, Fundamental Research Funds for the Central Universities, China (No. YJ201893)the Open-Foundation of Key Laboratory of Laser Device Technology, China North Industries Group Corporation Limited (No. KLLDT202104)Supported by the fund of the State Key Laboratory of Solidification Processing in NWPU (No. SKLSP202210)。
文摘Tuning the photoresponse of monolayer MoS_(2) could extend its potential application in many fields,however,it is still a challenge.In this study,CsPbBr_(3) nanoparticles were prepared and spin-coated on the surface of monolayer MoS_(2) to fabricate hybrid CsPbBr_(3)/MoS_(2) photodetectors.By combing the photoelectrical property of the CsPbBr_(3),the synergistic effect has been systematically studied from its carrier mobility,photoresponse and detectivity.It was found that nanofilm-coating of CsPbBr_(3)would impede the photoelectric performance due to the electron-hole recombination facilitated by the defects at the interface of C PbBr_(3) and MoS_(2) films.While the nanoparticles decorating was observed to significantly improve the conductivity of the monolayer Mo S_(2),which also increased the on/off ratio of the MoS_(2) transistor from 8.2×10~3 to 4.4×10^(4),and enhanced the carrier mobility from 0.090 cm^(2)V^(-1)s^(-1)to 0.202 cm^(2)V^(-1)s^(-1),ascribing to a mixed electron recombination-injection process.Furthermore,the CsPbBr_(3) nanofilm would decrease the responsivity to 136 and 178 A/W under the light wavelength of 400 and 500 nm,respectively,while decorating CsPbBr_(3) nanoparticles improve the photoresponse to 948 and 883 A/W with the detectivity at the level of 10^(11)Jones.This work may provide an easy and cost-efficient way to tune the photoresponse of MoS_(2) photodetectors.
基金supported by the National Natural Science Foundation of China (Nos.61774021, 61806007 and 61911530133)the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications),China (No.IPOC2019ZT07)+4 种基金the Fundamental Research Funds for the Central Universities (No.2018XKJC05)the Project of Key Science and Technology in Henan Province (No.202102310562)the Fund of Key Laboratory of Oracle Bone Inscriptions Information Processing,Ministry of Education of China (No.OIP2019M006)the Research Foundation of Anyang Normal University (No.AYNUKPY-2019-04)the Anyang Scientific and Technological Project (No.2021C01X012)。
文摘According to optical diffraction limit, the photoresponsity of nanowire(NW)-based photodetector exponentially decreases when its NW diameter reduces to the range of deep subwavelength. In this paper, we demonstrate a photoresponse-enhanced method of the deep-subwavelength Ga As NW photodetector by using a plasmon-driven dipole antenna. Considering that the enhancement is extremely influenced by the shape and size of antenna, the structure of antenna is optimized by finite difference time domain(FDTD) solutions. The optimal structure of antenna optimizes the responsivity-enhanced factors to 1123.3 and 224.7 in NW photodetectors with NW diameters of 20 nm and 60 nm, respectively. This photoresponse-enhanced method is promising for easy-integration high-performance nanoscale photodetectors.
基金supported by the National Key R&D Program of China(No.2019YFB2204301)。
文摘A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junctions.The transient current equation of the two junctions is calculated by the current-voltage formula of the p-n junction,and the photoresponse curve of the PPD is calculated and drawn by the numerical solution.Simulation results show that the dynamic model successfully restores the entire process of the electron accumulation in the PPD.The difference between the full well capacity(FWC)values which were calculated by the proposed model and the simulation results is less than 5%,which is much smaller than the error of 40%for the traditional model.
基金Supported by Innovation Project for College Young Teachers in Tibet Autonomous Region(QC2015-43)Major Scientific Research Project of Tibet Autonomous Region
文摘Chamaenerion spp.( Onagraceae) are a class of ecological restoration medicinal herbs. Mount Shergyla has three species and one variant of Chamaenerion. Studying their photoresponse characteristics and elucidating their adaptation and physiological response to the photosynthetic characteristics of the environment is the basis for the development and protection of the plant resources of the genus Chamaenerion. In this experiment,Li-6400 portable photosynthesis instrument was used to study the photoresponse characteristics of C. spp. in Mount Shergyla,and the photoresponse curves were fitted using a right-angle hyperbolic correction model. The results showed that Chamaenerion conspersum has low light compensation point[4. 931 μmol/( m^2·s) ],high light saturation point[1 000 μmol/( m^2·s) ],and strongest adaptability to light,which is one of the determinants of its distribution at each elevation of Mount Shergyla. Chamaenerion angustifolium subsp. circumvagum has higher light compensation point [11. 848 μmol/( m^2·s) ],low light saturation point[800 μmol/( m^2·s) ],and weakest adaptability to light,and it is a typical sciophilous plant. This result is consistent with the habitats( Rhododendron wardii shrub and spruce forest margin) that C. angustifolium are distributed in Mount Shergyla. C. angustifolium and Chamaenerion latifolium have higher light compensation points and higher light saturation points,suggesting that the adaptability of C. angustifolium and C. latifolium to the light environment is weak. This can also explain the narrow distribution of C. angustifolium and C. latifolium in Mount Shergyla. There are certain degree of differences in the responses of net photosynthetic rate( Pn),intercellular CO_2 concentration( Ci),stomatal conductance( Gs) and transpiration rate( Tr) of the three species and one variant of Chamaenerion to different photosynthetically active radiation( PAR). With the increase of light intensity,the Pn,Gs and Tr of Chamaenerion spp. increased significantly,and the Ci decreased. The Pn of C. conspersum and C. latifolium differed insignificantly,but they were both higher than that of C. angustifolium. The Pn of C. angustifolium subsp. circumvagum was the lowest. The Gs of C. conspersum and C. latifolium differed insignificantly,but they were both higher than that of C. angustifolium subsp. circumvagum. The Gs of C. angustifolium was the lowest. There was no obvious difference in Ci between C. angustifolium and C. latifolium,of which the Ci was both higher than that of C. conspersum. The Ci of C. angustifolium subsp. circumvagum was the lowest. C. angustifolium subsp. circumvagum had the highest Tr,followed by C. angustifolium and C. conspersum( no obvious difference),and C. latifolium had the lowest Tr. The light utilization efficiency of C. spp. ranked as C. angustifolium subsp. circumvagum < C. angustifolium < C. latifolium < C. conspersum. The light suppression phenomenon was evident in C. angustifolium,C. angustifolium subsp. circumvagum and C. latifolium. C. conspersum is most suitable for application under high light intensity conditions in Tibet. C. angustifolium,C. angustifolium subsp. circumvagum and C. latifolium should be shaded properly under conditions of high light intensity in the cultivation process,while C. conspersum needs to be supplemented with light during the cultivation process.
基金Project supported by the National Natural Science Foundation of China(Grant No.41176156)
文摘The development of solution strategies for Zinc oxide （ZnO） quantum dots provides a pathway to utilizing ZnO nanocrystal thin films in optoelectronic devices. In this work, quasi-spherical ZnO quantum dots with a diameter of 5 nm are synthesized by using ethanol as a solvent. ZnO nanocrystal thin film is obtained by spin-coating ZnO quantum dots on a Au interdigital electrode （IDE）/AI203 substrate and annealing at different temperatures in order to yield the optimal pho- tosensitive on/off ratio of ZnO. For further enhancing the responsivity, ion sputtering is utilized to deposit Pt nanoparticles on the surface of ZnO nanocrystal thin film, the responsivity of the ZnO/Pt bilayer nanostructure increases from 0.07 A/W to 54 A/W, showing that the metal/inorganic nanocrystal bilayer nanostructure can be used to improve the performance of optoelectronic devices. The excellent properties of ZnO/Pt bilayer nanostructure have important applications in future electronic and optoelectronic devices.
基金the funding provided by the Postgraduate Research Grant Scheme (PRGS) (Grant No. 1001/PFIZIK/845006) of the Universiti Sains Malaysia
文摘Undoped ZnO nanostructures were deposited on SiO2/Si substrates via radio 11：equency magnetron sputtenng at different deposition temperatures （room temperature, 200, 300, and 400 ℃）. The prepared samples were annealed at 500 ℃ for 2 h under an N2 flow. The structural, surface morphological, optical, and photoresponse characteristics of ZnO nanostructures as deposited and after annealing were then investigated. The energy bandgaps of all samples after annealing （3.22-3.28 eV） decreased compared with those of the as-deposited specimens. The barrier height increased when the deposition temperature increased and reached 0.77 eV at 400 ℃ after annealing with a leakage current of 0.17 gA at a 5 V bias. The UV photodetector device which was deposited at the optimal temperature of 300 ℃, has 12.51 × 10^3% pho- tosensitivity, 2.259 pA dark current, 0.508 s response time, and 0.466 s recovery time. The dark current significantly decreased for all samples after annealing. The proposed UV photodetectors exhibit high performance, high photosensi- tivity, shorter response and recovery times, and excellent stability at lower bias voltages of 5 and 2 V.
文摘Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the angle-dependent photoresponse of ReS_(2) are still very limited.Here,we studied the anisotropic photoresponse of layered ReS_(2) phototransistors in depth.Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies,which are along 120°and 90°,respectively.We further measured the angle-resolved photoresponse of a ReS_(2) transistor with 6 diagonally paired electrodes.The maximum photoresponsivity exceeds 0.515 A·W^(-1) along b-axis,which is around 3.8 times larger than that along the direction perpendicular to b axis,which is consistent with the optical anisotropic directions.The incident wavelength-and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS_(2) interaction,which explains the anisotropic photoresponse.We also observed angle-dependent photoresistive switching behavior of the ReS_(2) transistor,which leads to the formation of angle-resolved phototransistor memory.It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light.This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks(ANN)in a wide spectral range of sensitivity provided by polarized light.
基金the National Natural Science Foundation of China(Grant No.51772088)Hunan Provincial Innovation Foundation for Postgraduate,China(Grant No.CX20200422)。
文摘Bi_(2)O_(2)Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties.However,it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi_(2)O_(2)Se nanosheets.Here,a two-step chemical vapor deposition(CVD)route was used to directly grow the CsPbBr_(3)nanoplate-Bi_(2)O_(2)Se nanosheet hetero structures.The CsPbBr_(3)nanoplates were selectively grown on the Bi_(2)O_(2)Se nanosheet along the edges,where the dangling bonds provide the nucleation sites.The epitaxial relationships between CsPbBr3 and Bi_(2)O_(2)Se were determined as[200]_(Bi_(2)O_(2)Se)‖[110]_(CsPbBr_(3))and[110]_(Bi_(2)O_(2)Se)‖[200]_(CsPbBr_(3))by transmission electron microscopy characterization.The photoluminescence(PL)results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-Ⅰband arrangement at CsPbBr_(3)/Bi_(2)O_(2)Se interface,which was confirmed by ultraviolet photoelectron spectroscopy(UPS)and Kelvin probe measurements,and makes the photogenerated carriers transfer from CsPbBr_(3)to Bi_(2)O_(2)Se.Importantly,the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi_(2)O_(2)Se sheets,and the fast rise and decay time in microsecond.These results indicate that the direct epitaxy of the CsPbBr_(3)plates on the Bi_(2)O_(2)Se sheet may improve the optoelectronic performance of Bi_(2)O_(2)Se based devices.
基金Supported by National Key R&D Program of China(2016YFC0502006)Major Science and Technology Projects of Tibet(Z2016C01G01/02)
文摘The research aimed to analyze changes in photosynthetic characteristics of Paeonia ludlowii under saline-alkali stress,and annual seedlings of P.ludlowii were taken as the materials.Photoresponse process of P.ludlowii leaves under saline-alkali stress was simulated,and different models were used to fit photoresponse curve.The results showed that P n of P.ludlowii leaves showed the trend of first rising and then declining with PAR increased under saline-alkali stress;both G s and T r showed a rising trend with PAR increased;C i showed the trend of first declining and then rising with PAR increased.Photoresponse curve fitted by modified rectangular hyperbolic model had the best effect,and it was the optimal fitting model.P.ludlowii could adapt to saline-alkali stress in lower concentration,showing that P.ludlowii could be introduced and cultivated in saline-alkali land at a lower level.
文摘We have developed an experimental setup that has been proven suitable for the study of photoresponse of high Tc superconductors. The distinguish feature of this experimental setup lies mainly in the data acquisition system which is equipped with computer as well as the IEEE-488 interface bus. which ensures the accuracy to experimental results. Using the experimental setup, the optical response to laser radiation in high-Tc superconductors has been examined, both of bolometric effect and nonequilibrium optical response are revealed.
基金Project supported by the National Natural Science Foundation of China (Grant No 20173073)the State Key Development Program for Basic Research of China (Grant No 2002CB713802)+1 种基金the Nano- and Bio-device Key Project of Chinese Academy of Sciences, Chinathe 985 Project of Hunan University, China
文摘Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580 nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400 nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.
基金supported by the Topnotch Talents Program of Henan Agricultural University(30501032,30500418,30501049)the National Natural Science Foundation of China(22305070,U20041101)+2 种基金the Natural Science Foundation of Henan Province(232300420132)the Scientific and Technological Project of the Henan Province(222102240043)the Distinguished Young Scholar Fund Project of Hunan Province Natural Science Foundation(2023JЛ10041)。
文摘Photoresponsive smart materials,which exhibit swift or instantaneous responses to external light stimuli,are pivotal for advancing the development of novel smart devices.Among these materials,photoresponsive tetracoordinate arylboron com-pounds emerge as prominent molecular systems,owing to their captivating photochemical mechanisms and photophysical transformations.In recent years,these molecules have experienced notable progress,leading to the emergence of numerous organic boron photoresponsive molecular systems with innovative structures and exceptional performance.In this comprehensive review,we present a thorough examination of the latest advancements in the field,systematically elucidating the design strategies and structure-activity relationships of these mol-ecules.Furthermore,we delve into the photoresponse mechanisms of various molecules and summarize their unique characteristics.Ultimately,we analyze the challenges,opportunities,and prospects encountered in this exciting field of research.
基金supported by the National Natural Science Foundation of China(52422107,T2394471,and 62571319)Beijing Nova Program(20240484531)+1 种基金China Postdoctoral Science Foundation(2022M710074)and Open Research Fund Program of Beijing National Research Center for Information Science and Technology(04410304023).
文摘In the era of big data and artificial intelligence,optical neural networks(ONNs)have emerged as a promising alternative to conventional electronic approaches,offering superior parallelism,ultrafast processing speeds,and high energy efficiency[1-3].However,a major bottleneck in the practical implementation of ONNs is the absence of effective nonlinear activation functions.Self-driven photodetectors have emerged as versatile optical to electrical converters,opening innovative avenues for energy-effective and flexibly integrated activation functions in ONNs through their reconfigurable optoelectronic nonlinearity.
基金supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(CAS)(XDB0520103)the CAS Project for Young Scientists in Basic Research(YSBR-110)the National Natural Science Foundation of China(22135007,22305245,and 52403254)。
文摘Short-wavelength infrared(SWIR,1000-3000 nm)light detection is critical for emerging technologies such as non-invasive medical diagnostics,autonomous navigation,and secure optical communications[1].Currently,commercial SWIR photodetectors are predominantly based on epitaxially grown groupⅢ-Ⅴinorganic semiconductors(e.g.,InGaAs,InP),which suffer from complex and costly processing,limited spectral tunability,and mechanical rigidity[2].In contrast,solution-processed organic photodetectors(OPDs)offer distinct advantages,including low manufacturing costs,tunable spectral response,intrinsic flexibility,and facile integration with silicon read-out integrated circuitry(ROIC)[3-5].
基金financial supports of the National Natural Science Foundation of China(52222512)。
文摘The application potential of tuning two-dimensional materials(2DMs)characteristics through strain engineering for wearable and flexible devices has been widely recognized.However,the challenges lie in achieving accurate deterministic positioning,spatial modulation,controllable magnitude,and permanent nanostrains.Herein,motivated by the skin swelling caused by mosquito bites,a technique utilizing the heated nanotip in atomic force microscopy for thermomechanical nanoindentation is demonstrated.This method enables precise positioning of localized nanostrain and regulation of bandgap in tungsten diselenide(WSe_(2))/molybdenum disulfide(MoS_(2))heterobilayer transferred onto a flexible polymethyl methacrylate film.The magnitude of strain in the WSe_(2)/MoS_(2) heterobilayer can be controlled by adjusting the parameters of nanoindentation,leading to a spatially modulated average strain of up to 2.5%on the ring-shaped expansion structure(RES).The local bandgap of the WSe_(2)/MoS_(2) heterobilayer is spatially regulated through three distinct regions.In particular,the RES exhibits the largest extent of bandgap modulation,accompanied by a significant change of~12 meV.The nanostrain significantly enhances the photoresponse speed of the photodetector device.For instance,under illumination from a 405 nm wavelength-laser,the rise time and fall time are reduced by 75%and 87.52%,respectively,compared to the device without strain.Similarly,under illumination from a 532 nm wavelength-laser,the rise time and fall time are reduced by 66.67%and 80.60%,respectively.These findings demonstrate that the proposed method serves as a versatile way for improving the photoresponse of optoelectronic devices based on 2DMs.
基金National Key Research and Development Program of China,Grant/Award Number:2023YFA1406900Strategic Priority Research Program(B)of Chinese Academy of Sciences,Grant/Award Numbers:XDB0580000,GJ0090406,XDB43010200+7 种基金National Natural Science Foundation of China,Grant/Award Numbers:62222514,62350073,U2341226,61991440,91850208,62204249,62005249Youth Innovation Promotion Association of Chinese Academy of Sciences,Grant/Award Number:Y2021070Shanghai Science and Technology Committee,Grant/Award Numbers:23ZR1482000,22JC1402900Shanghai Municipal Science and Technology Major Project,Grant/Award Number:2019SHZDZX01Open Fund of State Key Laboratory of Infrared Physics,Grant/Award Number:SITP-NLIST-YB-2023-13Natural Science Foundation of Zhejiang Province,Grant/Award Numbers:LZ24F050006,LQ20F050005,LR22F050004Excellent Postdoctoral Research Projects of Zhejiang Province,Grant/Award Number:ZJ2021019Research Funds of Hangzhou Institute for Advanced Study,UCAS,Grant/Award Numbers:B02006C019025,B02006C021010。
文摘Multicolor photodetection,essential for applications in infrared imaging,environ-mental monitoring,and spectral analysis,is often limited by the narrow bandgaps of conventional materials,which struggle with speed,sensitivity,and room-temperature operation.We address these issues with a multicolor uncooled photo-detector based on an asymmetric Au/SnS/Gr vertical heterojunction with inversion-symmetry breaking.This design utilizes the complementary bandgaps of SnS and graphene to enhance the efficiency of carriers'transport through consis-tently oriented built-in electric fields,achieving significant advancements in direc-tional photoresponse.The device demonstrates highly sensitive photoelectric detection performance,such as a responsivity(R)of 55.4–89.7 A W^(–1)with rapid response times of approximately 104μs,and exceptional detectivity(D^(*))of 2.38×10^(10)Jones-8.19×10^(13)Jones from visible(520 nm)to infrared(2000 nm)light,making it suitable for applications demanding an imaging resolution of-0.5 mm.Additionally,the comparative analysis reveals that the asymmetric ver-tical heterojunction outperforms its counterparts,exhibiting approximately 9-fold the photoresponse of symmetric vertical heterojunction and almost 100-fold that of symmetric horizontal heterojunction.This highly sensitive multicolor detector holds significant promise for applications in advanced versatile object detection and imaging recognition systems.
基金National Natural Science Foundation of China(52172149)Youth S&T Talent Support Programme of Guangdong Provincial Association for Science and Technology(SKXRC202405)Guangdong Provincial Key Laboratory Project(High-Performance Integrated Circuits and Systems Laboratory,2023KSYS003)。
文摘All inorganic perovskite CsPbX_(3)with excellent optical properties and a tunable bandgap is a potential candidate for optoelectronic applications,and the amplified spontaneous emission(ASE)is normally reported in low-dimensional structures where the quantum confinement enhances ASE.Herein,we not only demonstrate the ASE in millimeter size CsPbCl_(x)Br_(3-x)crystal with a high defect concentration,but also tune the emission wavelength from the green band to blue band through the ion exchange of Br with Cl.The ASE centered at∼456 nm is probed at 50 K with a threshold of 106μJ/cm 2.Furthermore,a metal-semiconductor-metal(MSM)structure CsPbCl_(x)Br_(3-x)photodetector is fabricated and shows a distinct response to lights from UV to the blue band;the response spectrum range is quite different from the narrow band(∼30 nm)response of the CsPbBr_(3)photodetector induced by a charge collection narrowing(CCN)mechanism.The CsPbCl_(x)Br_(3-x)photodetector also exhibits fast response speeds with a rise time of 96μs and a decay time of 34μs,indicating the defects have limited influence on the transportation speed of the photo-generated carriers.
基金supported by National Key R&D Program of China(No.2023YFA1608701)the National Natural Science Foundation of China(Nos.62274168,11933006,U2141240,and 62005249)+3 种基金Hangzhou Leading Innovation and Entrepreneurship Team(No.TD2020002)Open Fund of State Key Laboratory of Infrared Physics(SITP-NLIST-YB-2023-13)Natural Science Foundation of Zhejiang Province(Nos.LZ24F050006 and LQ20F050005)the Research Funds of Hangzhou Institute for Advanced Study,UCAS(Nos.B02006C019025 and B02006C021010).
文摘The realization of controllable polarity photoresponse within a single device is a crucial advancement for simulating biological bipolar vision cells to drive the development of next-generation optoelectronic technologies.Nevertheless,current polarity photodetectors face significant challenges in fully suppressing symmetric photocurrent cancellation and optimizing carrier transport efficiency.Here,we propose a graphene-intercalated MoS_(2)/MoTe_(2)heterojunction,featuring a tailorable built-in electric field and a high efficiency transport channel.Spatially resolved photocurrent reveals that the controllable polarity photoresponse originates from the bias-dependent equivalent built-in electric field of MoS_(2)/MLG/MoTe_(2)heterojunction.The controllable polarity photoresponse realizes a large-area uniform“heart-shaped”photocurrent region.In enhanced polarity photoresponse mode,the photodetector exhibits broadband detection capabilities from visible(638 nm)to infrared(1550 nm)light,achieving a high responsivity of 18.1 A/W and an excellent detectivity of 2.8×10^(12)Jones,as well as fast response times of 94/119μs.Furthermore,precise imaging with a resolution better than 0.5 mm was successfully demonstrated,highlighting its polarity photoresponse for practical imaging applications.This work provides a new paradigm for controllable polarity photoresponse programmed by intercalated low-dimensional material structures,paving the way for next-generation intelligent sensing chips.
基金the National Natural Science Foundation of China(grant no.22235006)the RIE2025 Manufacturing,Trade,and Connectivity Programmatic Fund(award no.M21J9b0085)+2 种基金the National Research Foundationthe Prime Minister’s Office of Singapore under its Competitive Research Program(award no.NRF-CRP23-2019-0002)the National Research Foundation(NRF)Investigatorship Programme(award no.NRF-NRFI05-2019-0003).
文摘Achieving photochromism,photodeformation,and photoinduced room-temperature phosphorescence(RTP)simultaneously in a single type of moleculedoped film is a complex and challenging task.Here,we introduce an efficient design strategy that utilizes dicarbonyl as a bridge linking between phenothiazine(PTZ)units,thereby enabling a synergistic multi-photoresponse upon photoactivation.Our study reveals that thin films of polyvinyl alcohol(PVA)doped with five PTZ derivatives(DPTZCn:n=1–5)show photoactivated RTP.Notably,the DPTZC1 variant in PVA film uniquely undergoes photoactivated macroscopic deformation and displays enhanced photoluminescence efficiency compared to its PTZ counterparts(DPTZCn:n=2–5)in PVA films.Further photophysical analysis indicates that the exceptional performance of DPTZC1 stems from the combined effects of keto-enol tautomerism and matrix rigidification,which also facilitate the generation of photoinduced radicals in DPTZC1 in the PVA film.We investigate the potential bionic applications of the versatile DPTZC1,providing insights into the design of intelligent,photodriven materials based on RTP.
