In photolithography,shortening the exposure wavelength from ultraviolet to extreme ultraviolet(EUV,13.5 nm)and soft X-ray region in terms of beyond EUV(BEUV,6.X nm)and water window X-ray(WWX,2.2–4.4 nm)is expected to...In photolithography,shortening the exposure wavelength from ultraviolet to extreme ultraviolet(EUV,13.5 nm)and soft X-ray region in terms of beyond EUV(BEUV,6.X nm)and water window X-ray(WWX,2.2–4.4 nm)is expected to further miniaturize the technology node down to sub-5 nm level.However,the absorption ability of molecules in these ranges,especially WWX region,is unknown,which should be very important for the utilization of energy.Herein,the molar absorption cross sections of different elements at 2.4 nm of WWX were firstly calculated and compared with the wavelengths of 13.5 nm and 6.7 nm.Based on the absorption cross sections in these ranges and density estimation results from the density-functional theory calculation,the linear absorption coefficients of typical resist materials,including metal-oxy clusters,organic small molecules,polymers,and photoacid generators(PAGs),are evaluated.The analysis suggests that the Zn cluster has higher absorption in BEUV,whereas the Sn cluster has higher absorption in WWX.Doping PAGs with high EUV absorption atoms improves chemically amplified photoresist(CAR)polymer absorption performance.However,for WWX,it is necessary to introduce an absorption layer containing high WWX absorption elements such as Zr,Sn,and Hf to increase the WWX absorption.展开更多
The application of surface textures has been employed to improve the tribological performance of various mechanical components. Various techniques have been used for the application of surface textures such as micro-d...The application of surface textures has been employed to improve the tribological performance of various mechanical components. Various techniques have been used for the application of surface textures such as micro-dimple arrays, but the fabrication of such arrays on cylindrical inner surfaces remains a challenge. In this study, a dry-film photoresist is used as a mask during through-mask electrochemical micromachining to successfully prepare micro-dimple arrays with dimples 94 lm in diameter and 22.7 lm deep on cylindrical inner surfaces, with a machining time of 9 s and an applied voltage of 8 V. The versatility of this method is demonstrated, as are its potential low cost and high efficiency. It is also shown that for a fixed dimple depth, a smaller dimple diameter can be obtained using a combination of lower current density and longer machining time in a passivating sodium nitrate electrolyte.展开更多
UV-curable hyperbranched polyurethane （UV-HBPU） containing carboxyl groups was synthesized from isophorone diisocyanate （IPDI）, diethanolamine （DEOA）, polyethylene glycol （PEG-400）, hydroxyethyl acrylate （HEA...UV-curable hyperbranched polyurethane （UV-HBPU） containing carboxyl groups was synthesized from isophorone diisocyanate （IPDI）, diethanolamine （DEOA）, polyethylene glycol （PEG-400）, hydroxyethyl acrylate （HEA）, and 2,2-his （hydroxymethyl） propionic acid （DMPA）. The UV-HBPU was used as a negative-type photoresist for a printed circuit board （PCB）. Fourier-transform infrared spectroscopy （FTIR） and proton nuclear magnetic resonance （1HNMR） spectroscopy of UV-HBPUs indicated that the synthesis was successful. Differential scanning calorimetry （DSC） and thermogravimetric analysis （TGA） showed that the thermal stability of the UV-HBPUs decreased as the HEA content increased. The polymer exhibited excellent photoresist properties, and the resolution of circuits based on this negative-type photoresist reached 10 μm.展开更多
Ion＇s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency （rf） source, ...Ion＇s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency （rf） source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution （IED） at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.展开更多
Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the...Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility(SSRF)08U1B beamline in advancing this field.Specifically,it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch on a resist using synchrotron-based EUV lithography.This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node.We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist.A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane mask gratings.These gratings,with an aspect ratio of approximately 3,were created using electron beam lithography on an innovative mask framework.This framework was crucial in eliminating the impact of zeroth-order light on interference patterns.The proposed framework propose offers a new approach to mask fabrication,particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.展开更多
Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices.To date,most photoresists have been based on organic polymers,which have been dominating the semiconductor industries ove...Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices.To date,most photoresists have been based on organic polymers,which have been dominating the semiconductor industries over the past few decades.It is obvious that extreme ultraviolet(EUV)lithography has become the next-generation lithography technology.The development of comprehensive performance EUV resist is one of the most critical issues.However,organic polymeric photoresists are difficult to meet the harsh requirements of EUV lithography.Pure inorganic photoresists such as metal salts,hydrogen silsesquioxane(HSQ)are expected for EUV lithography due to their high resistance and high resolution.But the low sensitivity makes them not suitable for high volume manufacturing(HVM).Organic-inorganic hybrid photoresists,containing both organic and inorganic components,are regarded as one of the most promising EUV resists.They combine both merits of organic and inorganic materials and have significant advantages in machinability,etching resistance,EUV absorption,and chemical/thermal stability.Organic-inorganic hybrid photoresists are considered as ideal materials for realizing industrialgrade patterns below 10 nm.This review mainly focuses on the development of organic-inorganic hybrid photoresists over the past decade.展开更多
Polyimides are well-known for their high chemical inertness and thermal stability. However, it is usually challenging to synthesize UV-curable polyimides since the imidization reaction requires such harsh conditions t...Polyimides are well-known for their high chemical inertness and thermal stability. However, it is usually challenging to synthesize UV-curable polyimides since the imidization reaction requires such harsh conditions that acrylate type double bonds cannot withstand. In this work, synthetic methods are developed to obtain polyester-imide type binder polymers with high thermal stability, high compatibility with the other components of the black photoresist, and fine photolithographic patterning property for the negative-tone black photoresist. The syntheses of diimide-diacid or diimide-diol intermediates for the polyesterification with dianhydride gave polyester imides which meets this requirement. The photolithographic tests have shown that the patterning of the micron-sized PDL of the organic light emitting diode (OLED) panel could be obtained. This work will interest the researchers working on the design and optimization of thermally stable binder polymers.展开更多
The copolymers of chloroethyl methacrylate (CMA), glycidyl methacrylate (GMA), and methyl methacrylate (MMA) were synthesized in benzene solution. Their breadths of the molecular weight distributions are 2.1 and 2.3,...The copolymers of chloroethyl methacrylate (CMA), glycidyl methacrylate (GMA), and methyl methacrylate (MMA) were synthesized in benzene solution. Their breadths of the molecular weight distributions are 2.1 and 2.3, respectively. The thermal stability of P(GMA-CMA) is superior to that of P(CMA-MMA). The resolutions of P(CMA-MMA) and P(GMA-CMA) photoresists were found to be 0.1-0.16 mu m and 0.17-0.2 mu m, respectively. (Author abstract) 9 Refs.展开更多
AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applicati...AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applications,however,the inverted profile is needed.In this paper,we report the effects of process conditions on the resist profile and process window for lift off applications.展开更多
In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the a...In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating （BARC）. By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.展开更多
A further study on the fabrication of diffraction--limited full aperture microlens array by melting photoresist is described. The formation of aspherical surface is considered. The parameters for controlling the proce...A further study on the fabrication of diffraction--limited full aperture microlens array by melting photoresist is described. The formation of aspherical surface is considered. The parameters for controlling the process of lens production, the height of original photoresist cylinders and the angle of contact between the melted photoresist and the substrate, are discussed in detail. The diffraction limited full--aperture microlens arrays have been obtained,and some measurement results are shown in the paper. A method of controlling the formation of quality microlens array in real time is suggested.展开更多
Transparent photoresists with a high refractive index(RI)and high transmittance in visible wavelengths have promising functionalities in optical fields.This work reports a kind of tunable optical material composed of ...Transparent photoresists with a high refractive index(RI)and high transmittance in visible wavelengths have promising functionalities in optical fields.This work reports a kind of tunable optical material composed of titanium dioxide nanoparticles embedded in acrylic resin with a high RI for ultraviolet(UV)-imprint lithography.The hybrid film exhibits a tunable RI of up to 1.67(589 nm)after being cured by UV light,while maintaining both a high transparency of over 98%in the visible light range and a low haze of less than 0.05%.The precision machining of optical microstructures can be imprinted easily and efficiently using the hybrid resin,which acts as a light guide plate(LGP)to guide the light from the side to the top in order to conserve the energy of the display device.These preliminary studies based on both laboratory and commercial experiments pave the way for exploiting the unparalleled optical properties of nanocomposite resins and promoting their industrial application.展开更多
Epoxy acrylate (EA) resin, which originates from epoxides, has long been served as a photocurable coating and adhesive material owing to its double bonds. Specifically, alkaline-developable EA resins can be used as a ...Epoxy acrylate (EA) resin, which originates from epoxides, has long been served as a photocurable coating and adhesive material owing to its double bonds. Specifically, alkaline-developable EA resins can be used as a binder polymer in negative-tone photoresists. In this work, we synthesized a series of acidic polyester-type epoxy methacrylate resins, characterized the intermediates and products, and tested their performance as a binder polymer for the photolithographic micro-patterning of the pixel-defining layer on organic light-emitting diodes in comparison to a widely used commercial binder polymer. Copolymer-type binder polymer BP-2-2 was produced excellent patterning with no residue due to its high compatibility with the black mill base.展开更多
Light manipulation and control are essential in various contemporary technologies,and as these technologies evolve,the demand for miniaturized optical components increases.Planar-lens technologies,such as metasurfaces...Light manipulation and control are essential in various contemporary technologies,and as these technologies evolve,the demand for miniaturized optical components increases.Planar-lens technologies,such as metasurfaces and difractive optical elements,have gained attention in recent years for their potential to dramatically reduce the thickness of traditional refractive optical systems.However,their fabrication,particularly for visible wavelengths,involves complex and costly processes,such as high-resolution lithography and dry-etching,which has limited their availability.In this study,we present a simplifed method forfabricating visible Fresnel zone plate(FZP)planar lenses,a type of diffractive optical element,using an i-line stepper and a special photoresist(color resist)that only necessitates coating,exposure,and development,eliminating the need for etching or other post-processing steps.We fabricated visible FZp lens patterns using conventional photolithography equipment on 8-inch silica glass wafers,and demonstrated focusing of 550 nm light to a diameter of 1.1μm with a focusing efficiency of 7.2%.Numerical simulations showed excellent agreement with experimental results,confirming the high precision and designability of our method.Our lenses were also able to image objects with features down to 1.1μm,showcasing their potential for practical applications in imaging.Our method is a cost-effective,simple,and scalable solution for mass production of planar lenses and other optical components operating in the visible region.It enables the development of advanced,miniaturized optical systems to meet modern technology demand,making it a valuable contribution to optical component manufacturing.展开更多
Cu(In,Ga)Se2(CIGS) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily fo...Cu(In,Ga)Se2(CIGS) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily focused on the structure optimization and modulation in order to enhance the photoelectric conversion efficiency. Here, we exploit another application of this multilayer heterostructure in photoresistance-modulated position sensitive detector by introducing lateral photoresistance effect.The lateral photoresistance measurements show that this multilayer heterojunction exhibits a wide spectral response(~330 to ~1150 nm) and excellent bipolar photoresistance performances(position sensitivity of ~63.26 X/mm and nonlinearity <4.5%), and a fast response speed(rise and fall time of ~14.46 and^14.42 ms, respectively). More importantly, based on the lateral photoresistance effect, the CIGS heterostructure may also be developed as a position-dependent resistance memory device, which can be modulated by changing laser intensity, wavelength, and bias voltage with excellent stability and repeatability, and the position resolution reaches up to 1 lm. These results can be well explained by considering the diffusion and the drift model of carriers in the CIGS multilayer heterojunction. This work provides a new approach of achieving novel photoelectric sensors and memory devices based on the traditional photovoltaic heterostructures.展开更多
Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs ...Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).展开更多
In this study, a full-color emission red–green–blue(RGB) quantum-dot(QD)-based micro-light-emitting-diode(micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The ...In this study, a full-color emission red–green–blue(RGB) quantum-dot(QD)-based micro-light-emitting-diode(micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The UV micro-LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro-LEDs. To reduce the optical cross-talk effect,a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross-talk reduction. The cross-talk effect of the well-confined QDs in the window is confirmed by a fluorescence microscope, which shows clear separation between QD pixels. A distributed Bragg reflector is covered on the micro-LED array and the QDs' jetted mold to further increase the reuse of UV light.The enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively.展开更多
A device was designed and assembled to analyze the outgassing of molecular glass(MG)photoresists under extreme ultraviolet(EUV)exposure.The outgassing of the photoresists with different components and different concen...A device was designed and assembled to analyze the outgassing of molecular glass(MG)photoresists under extreme ultraviolet(EUV)exposure.The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl(t-Boc),photo-generated acid(PAG),and acid quencher was systematically investigated.Based on experiments,some solutions for reducing the outgassing of MG photoresists were proposed.展开更多
At present, high internal stress in SU-8 photoresist layer has become one of the most primary problems and restricted structure stability and higher aspect ratio of SU-8 photoresist. However, the existing studies all ...At present, high internal stress in SU-8 photoresist layer has become one of the most primary problems and restricted structure stability and higher aspect ratio of SU-8 photoresist. However, the existing studies all focused on optimizing the process pa-rameters or mask design, and could not be popularized. The purpose of this paper is to reduce the internal stress in cured SU-8 photoresist layer by ultrasonic stress relief technology. The ultrasonic stress relief mechanism in SU-8 photoresist layer was presented. Based on improved Stoney’s formula, the profile mothod calculation model for SU-8 internal stress was proposed. The effect of ultrasonic stress relief on SU-8 layers was studied by experiments. Some important factors, such as amplitude of vibration, power input and relief time, were discussed. The values of internal stress before and after the ultrasonic stress relief process were compared. The research results show that the internal stress in cured SU-8 layer can be reduced effectively if the proper experimental parameters are chosen, and ultrasonic stress relief technology in nonmetal field has some practical value.展开更多
A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallizatio...A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallization(2 m W), and high etching selectivity(15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on Sb Bi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that Sb Bi is a promising laser heat-mode resist material for micro/nanostructure fabrication.展开更多
基金supported by the National Natural Science Foundation of China(22090011,22378052)the Fundamental Research Funds for China Central Universities(DUT22LAB608 and DUT20RC(3)030)+1 种基金Liaoning Binhai Laboratory(LBLB-2023-03)Key R&D Program of Shandong Province(2021CXGC010308).
文摘In photolithography,shortening the exposure wavelength from ultraviolet to extreme ultraviolet(EUV,13.5 nm)and soft X-ray region in terms of beyond EUV(BEUV,6.X nm)and water window X-ray(WWX,2.2–4.4 nm)is expected to further miniaturize the technology node down to sub-5 nm level.However,the absorption ability of molecules in these ranges,especially WWX region,is unknown,which should be very important for the utilization of energy.Herein,the molar absorption cross sections of different elements at 2.4 nm of WWX were firstly calculated and compared with the wavelengths of 13.5 nm and 6.7 nm.Based on the absorption cross sections in these ranges and density estimation results from the density-functional theory calculation,the linear absorption coefficients of typical resist materials,including metal-oxy clusters,organic small molecules,polymers,and photoacid generators(PAGs),are evaluated.The analysis suggests that the Zn cluster has higher absorption in BEUV,whereas the Sn cluster has higher absorption in WWX.Doping PAGs with high EUV absorption atoms improves chemically amplified photoresist(CAR)polymer absorption performance.However,for WWX,it is necessary to introduce an absorption layer containing high WWX absorption elements such as Zr,Sn,and Hf to increase the WWX absorption.
基金supported by the Joint Funds of the National Natural Science Foundation of China and Guangdong Province(No.U1134003)
文摘The application of surface textures has been employed to improve the tribological performance of various mechanical components. Various techniques have been used for the application of surface textures such as micro-dimple arrays, but the fabrication of such arrays on cylindrical inner surfaces remains a challenge. In this study, a dry-film photoresist is used as a mask during through-mask electrochemical micromachining to successfully prepare micro-dimple arrays with dimples 94 lm in diameter and 22.7 lm deep on cylindrical inner surfaces, with a machining time of 9 s and an applied voltage of 8 V. The versatility of this method is demonstrated, as are its potential low cost and high efficiency. It is also shown that for a fixed dimple depth, a smaller dimple diameter can be obtained using a combination of lower current density and longer machining time in a passivating sodium nitrate electrolyte.
基金Funded by the National Natural Science Foundation of China(Nos.51203063,51103064)
文摘UV-curable hyperbranched polyurethane （UV-HBPU） containing carboxyl groups was synthesized from isophorone diisocyanate （IPDI）, diethanolamine （DEOA）, polyethylene glycol （PEG-400）, hydroxyethyl acrylate （HEA）, and 2,2-his （hydroxymethyl） propionic acid （DMPA）. The UV-HBPU was used as a negative-type photoresist for a printed circuit board （PCB）. Fourier-transform infrared spectroscopy （FTIR） and proton nuclear magnetic resonance （1HNMR） spectroscopy of UV-HBPUs indicated that the synthesis was successful. Differential scanning calorimetry （DSC） and thermogravimetric analysis （TGA） showed that the thermal stability of the UV-HBPUs decreased as the HEA content increased. The polymer exhibited excellent photoresist properties, and the resolution of circuits based on this negative-type photoresist reached 10 μm.
基金supported by National Natural Science Foundation of China (Nos.11075029, 10975030)the Important National Science and Technology Specific Project of China (No.2011ZX02403-001)
文摘Ion＇s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency （rf） source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution （IED） at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.
基金supported by the National Key Research and Development Program of China(Nos.2021YFA1601003,2017YFA0206002,2017YFA0403400)the National Natural Science Foundation of China(No.11775291)。
文摘Evaluating the comprehensive characteristics of extreme ultraviolet(EUV)photoresists is crucial for their application in EUV lithography,a key process in modern technology.This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility(SSRF)08U1B beamline in advancing this field.Specifically,it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch on a resist using synchrotron-based EUV lithography.This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node.We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist.A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane mask gratings.These gratings,with an aspect ratio of approximately 3,were created using electron beam lithography on an innovative mask framework.This framework was crucial in eliminating the impact of zeroth-order light on interference patterns.The proposed framework propose offers a new approach to mask fabrication,particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.
基金Financial support from the National Natural Science Foundation of China(22090012,U20A20144,21873106,22073108 and 21903085)the Ministry of Science and Technology of China Major Project(2018ZX02102005,2011ZX02701)is gratefully acknowledged.
文摘Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices.To date,most photoresists have been based on organic polymers,which have been dominating the semiconductor industries over the past few decades.It is obvious that extreme ultraviolet(EUV)lithography has become the next-generation lithography technology.The development of comprehensive performance EUV resist is one of the most critical issues.However,organic polymeric photoresists are difficult to meet the harsh requirements of EUV lithography.Pure inorganic photoresists such as metal salts,hydrogen silsesquioxane(HSQ)are expected for EUV lithography due to their high resistance and high resolution.But the low sensitivity makes them not suitable for high volume manufacturing(HVM).Organic-inorganic hybrid photoresists,containing both organic and inorganic components,are regarded as one of the most promising EUV resists.They combine both merits of organic and inorganic materials and have significant advantages in machinability,etching resistance,EUV absorption,and chemical/thermal stability.Organic-inorganic hybrid photoresists are considered as ideal materials for realizing industrialgrade patterns below 10 nm.This review mainly focuses on the development of organic-inorganic hybrid photoresists over the past decade.
文摘Polyimides are well-known for their high chemical inertness and thermal stability. However, it is usually challenging to synthesize UV-curable polyimides since the imidization reaction requires such harsh conditions that acrylate type double bonds cannot withstand. In this work, synthetic methods are developed to obtain polyester-imide type binder polymers with high thermal stability, high compatibility with the other components of the black photoresist, and fine photolithographic patterning property for the negative-tone black photoresist. The syntheses of diimide-diacid or diimide-diol intermediates for the polyesterification with dianhydride gave polyester imides which meets this requirement. The photolithographic tests have shown that the patterning of the micron-sized PDL of the organic light emitting diode (OLED) panel could be obtained. This work will interest the researchers working on the design and optimization of thermally stable binder polymers.
基金This work is financially supported by the National Natural Science Foundation of China.
文摘The copolymers of chloroethyl methacrylate (CMA), glycidyl methacrylate (GMA), and methyl methacrylate (MMA) were synthesized in benzene solution. Their breadths of the molecular weight distributions are 2.1 and 2.3, respectively. The thermal stability of P(GMA-CMA) is superior to that of P(CMA-MMA). The resolutions of P(CMA-MMA) and P(GMA-CMA) photoresists were found to be 0.1-0.16 mu m and 0.17-0.2 mu m, respectively. (Author abstract) 9 Refs.
文摘AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applications,however,the inverted profile is needed.In this paper,we report the effects of process conditions on the resist profile and process window for lift off applications.
基金Project supported by the National Special Program of China (Grant No. 2009ZX02204-008)the National Basic Research Program of China (Grant No. 2007AA01Z333)
文摘In this work, a 90-nm critical dimension （CD） technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating （BARC）. By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.
文摘A further study on the fabrication of diffraction--limited full aperture microlens array by melting photoresist is described. The formation of aspherical surface is considered. The parameters for controlling the process of lens production, the height of original photoresist cylinders and the angle of contact between the melted photoresist and the substrate, are discussed in detail. The diffraction limited full--aperture microlens arrays have been obtained,and some measurement results are shown in the paper. A method of controlling the formation of quality microlens array in real time is suggested.
基金supported by the National Natural Science Foundation of China(22288102 and 22278027).
文摘Transparent photoresists with a high refractive index(RI)and high transmittance in visible wavelengths have promising functionalities in optical fields.This work reports a kind of tunable optical material composed of titanium dioxide nanoparticles embedded in acrylic resin with a high RI for ultraviolet(UV)-imprint lithography.The hybrid film exhibits a tunable RI of up to 1.67(589 nm)after being cured by UV light,while maintaining both a high transparency of over 98%in the visible light range and a low haze of less than 0.05%.The precision machining of optical microstructures can be imprinted easily and efficiently using the hybrid resin,which acts as a light guide plate(LGP)to guide the light from the side to the top in order to conserve the energy of the display device.These preliminary studies based on both laboratory and commercial experiments pave the way for exploiting the unparalleled optical properties of nanocomposite resins and promoting their industrial application.
文摘Epoxy acrylate (EA) resin, which originates from epoxides, has long been served as a photocurable coating and adhesive material owing to its double bonds. Specifically, alkaline-developable EA resins can be used as a binder polymer in negative-tone photoresists. In this work, we synthesized a series of acidic polyester-type epoxy methacrylate resins, characterized the intermediates and products, and tested their performance as a binder polymer for the photolithographic micro-patterning of the pixel-defining layer on organic light-emitting diodes in comparison to a widely used commercial binder polymer. Copolymer-type binder polymer BP-2-2 was produced excellent patterning with no residue due to its high compatibility with the black mill base.
文摘Light manipulation and control are essential in various contemporary technologies,and as these technologies evolve,the demand for miniaturized optical components increases.Planar-lens technologies,such as metasurfaces and difractive optical elements,have gained attention in recent years for their potential to dramatically reduce the thickness of traditional refractive optical systems.However,their fabrication,particularly for visible wavelengths,involves complex and costly processes,such as high-resolution lithography and dry-etching,which has limited their availability.In this study,we present a simplifed method forfabricating visible Fresnel zone plate(FZP)planar lenses,a type of diffractive optical element,using an i-line stepper and a special photoresist(color resist)that only necessitates coating,exposure,and development,eliminating the need for etching or other post-processing steps.We fabricated visible FZp lens patterns using conventional photolithography equipment on 8-inch silica glass wafers,and demonstrated focusing of 550 nm light to a diameter of 1.1μm with a focusing efficiency of 7.2%.Numerical simulations showed excellent agreement with experimental results,confirming the high precision and designability of our method.Our lenses were also able to image objects with features down to 1.1μm,showcasing their potential for practical applications in imaging.Our method is a cost-effective,simple,and scalable solution for mass production of planar lenses and other optical components operating in the visible region.It enables the development of advanced,miniaturized optical systems to meet modern technology demand,making it a valuable contribution to optical component manufacturing.
基金supported by the National Natural Science Foundation of China (11704094, 11504076, 51372064, 61405040, 51622205, 61675027, 51432005, and 61505010)the Natural Science Foundation of Hebei Province (F2019201047, F2018201198, F2017201141, and E2017201227)the Natural Science Foundation for Distinguished Young Scholars of Hebei University (2015JQ03)。
文摘Cu(In,Ga)Se2(CIGS) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily focused on the structure optimization and modulation in order to enhance the photoelectric conversion efficiency. Here, we exploit another application of this multilayer heterostructure in photoresistance-modulated position sensitive detector by introducing lateral photoresistance effect.The lateral photoresistance measurements show that this multilayer heterojunction exhibits a wide spectral response(~330 to ~1150 nm) and excellent bipolar photoresistance performances(position sensitivity of ~63.26 X/mm and nonlinearity <4.5%), and a fast response speed(rise and fall time of ~14.46 and^14.42 ms, respectively). More importantly, based on the lateral photoresistance effect, the CIGS heterostructure may also be developed as a position-dependent resistance memory device, which can be modulated by changing laser intensity, wavelength, and bias voltage with excellent stability and repeatability, and the position resolution reaches up to 1 lm. These results can be well explained by considering the diffusion and the drift model of carriers in the CIGS multilayer heterojunction. This work provides a new approach of achieving novel photoelectric sensors and memory devices based on the traditional photovoltaic heterostructures.
基金Ministry of Science and Technology,Taiwan,China(107-2221-E-009-113-MY3,108-2221-E-009-113-MY3)National Natural Science Foundation of China(11904302)+1 种基金Hsinchu Science Park Bureau,Ministry of Science and Technology,Taiwan,China(108A08B)Major Science and Technology Project of Xiamen,China(3502Z20191015)。
文摘Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).
基金Ministry of Science and Technology,Taiwan,China(MOST)(MOST104-3113-E-009-002-CC2,MOST105-2622-E-009-023-CC2)
文摘In this study, a full-color emission red–green–blue(RGB) quantum-dot(QD)-based micro-light-emitting-diode(micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The UV micro-LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro-LEDs. To reduce the optical cross-talk effect,a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross-talk reduction. The cross-talk effect of the well-confined QDs in the window is confirmed by a fluorescence microscope, which shows clear separation between QD pixels. A distributed Bragg reflector is covered on the micro-LED array and the QDs' jetted mold to further increase the reuse of UV light.The enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively.
基金financially supported by the National Natural Science Foundation of China(21373240,91123033,21233011)the National Science and Technology Major Project of China(2011ZX02701)
文摘A device was designed and assembled to analyze the outgassing of molecular glass(MG)photoresists under extreme ultraviolet(EUV)exposure.The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl(t-Boc),photo-generated acid(PAG),and acid quencher was systematically investigated.Based on experiments,some solutions for reducing the outgassing of MG photoresists were proposed.
基金supported by the National Natural Science Foundation of China (Grant No50675025)
文摘At present, high internal stress in SU-8 photoresist layer has become one of the most primary problems and restricted structure stability and higher aspect ratio of SU-8 photoresist. However, the existing studies all focused on optimizing the process pa-rameters or mask design, and could not be popularized. The purpose of this paper is to reduce the internal stress in cured SU-8 photoresist layer by ultrasonic stress relief technology. The ultrasonic stress relief mechanism in SU-8 photoresist layer was presented. Based on improved Stoney’s formula, the profile mothod calculation model for SU-8 internal stress was proposed. The effect of ultrasonic stress relief on SU-8 layers was studied by experiments. Some important factors, such as amplitude of vibration, power input and relief time, were discussed. The values of internal stress before and after the ultrasonic stress relief process were compared. The research results show that the internal stress in cured SU-8 layer can be reduced effectively if the proper experimental parameters are chosen, and ultrasonic stress relief technology in nonmetal field has some practical value.
基金partially supported by the National Natural Science Foundation of China(Nos.51672292and 61627826)the International Science&Technology Cooperation Program of China:Intergovernmental International Cooperation Program in Science and Technology Innovation(No.2016YFE0110600)the International Science&Technology Cooperation Program of Shanghai(No.16520710500)
文摘A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallization(2 m W), and high etching selectivity(15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on Sb Bi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that Sb Bi is a promising laser heat-mode resist material for micro/nanostructure fabrication.
