Angle-resolved photoemission spectroscopy(ARPES)has become a cornerstone technique for elucidating the electronic structures of emergent quantum materials.Among these,kagome materials—distinguished by their two-dimen...Angle-resolved photoemission spectroscopy(ARPES)has become a cornerstone technique for elucidating the electronic structures of emergent quantum materials.Among these,kagome materials—distinguished by their two-dimensional lattice of corner-sharing triangles—provide a fertile ground for investigating exotic quantum phenomena,driven by geometric frustration,electronic correlation,and topology.In this review,we present an overview of recent ARPES studies on transition-metal kagome materials.We first outline the fundamental features of their electronic structures,including van Hove singularities,Dirac points,and flat bands,and discuss the novel quantum states that arise from many-body interactions within the kagome lattice.We then highlight key ARPES investigations into these unique electronic structures,detailing their manifestation and associated quantum states in representative kagome materials.Finally,we offer a forward-looking perspective on the potential of ARPES to uncover new quantum phenomena and its broader implications for the study of underlying physics in kagome materials.展开更多
The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ)(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectr...The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ)(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectroscopy(ARPES).Bi2223single crystals with different doping levels are prepared by controlled annealing,which cover the underdoped,optimallydoped and overdoped regions.The electronic phase diagram of Bi2223 is established which describes the Tcdependence on the sample doping level.The doping dependence of the nodal Fermi momentum for the outer(OP)and inner(IP)CuO_(2)planes is determined.Charge distribution imbalance between the OP and IP CuO_(2)planes is quantified,showing enhanced disparity with increasing doping.Nodal band dispersions demonstrate a prominent kink at~94 meV in the IP band,attributed to the unique Cu coordination in the IP plane,while a weaker~60 meV kink is observed in the OP band.The nodal Fermi velocity of both OP and IP bands is nearly constant at~1.62 eV·A independent of doping.These results provide important information to understand the origin of high Tcand superconductivity mechanism in high temperature cuprate superconductors.展开更多
Molecular frame photoemission is a very sensitive probe of the photoionization （PI） dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV cir...Molecular frame photoemission is a very sensitive probe of the photoionization （PI） dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV circularly polarized synchrotron radiation at SOLEIL at the level of the molecular frame photoelectron angular distributions （MFPADs）. We use the vector correlation method which combines imaging and time-of-flight resolved electron-ion coincidence techniques, and a generalized formalism for the expression of the Ⅰ（χ, θe, Фe） MFPADs, where χ is the orientation of the molecular axis with respect to the light quantization axis and （θe, Фe） the electron emission direction in the molecular frame. Selected MFPADs for a molecule aligned parallel or perpendicular to linearly polarized light, or perpendicular to the propagation axis of circularly polarized light, are presented for dissociative photoionization （DPI） of D2 at two photon excitation energies, hv=19 eV, where direct PI is the only channel opened, and hv=32.5 eV, i.e. in the region involving resonant excitation of Q1 and Q2 doubly excited state series. We discuss in particular the properties of the circular dichroism characterizing photoemission in the molecular frame for direct and resonant PI. In the latter case, a remarkable behavior is observed which may be attributed to the interference occurring between undistinguishable autoionization decay channels.展开更多
A surface femtosecond two-photon photoemission （2PPE） spectrometer devoted to the study of ultrafast excited electron dynamics and photochemical kinetics on metal and metal oxide surfaces has been constructed. Low e...A surface femtosecond two-photon photoemission （2PPE） spectrometer devoted to the study of ultrafast excited electron dynamics and photochemical kinetics on metal and metal oxide surfaces has been constructed. Low energy photoelectrons are measured using a hemispherical electron energy analyzer with an imaging detector that allows us to detect the energy and the angular distributions of the photoelectrons simultaneously. A Mach-Zehnder interferom- eter was built for the time-resolved 2PPE （TR-2PPE） measurement to study ultrafast surface excited electron dynamics, which was demonstrated on the Cu（111） surface. A scheme for measuring time-dependent 2PPE （TD-2PPE） spectra has also been developed for studies of surface photochemistry. This technique has been applied to a preliminary study on the photochemical kinetics on ethanol/TiO2（110）. We have also shown that the ultrafast dynamics of photoinduced surface excited resonances can be investigated in a reliable way by combining the TR-2PPE and TD-2PPE techniques.展开更多
The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal reso...The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal resolutions. Recently, we have successfully set up a timeresolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique to measure electron densities at specific energy levels in space. This instrument provides us an unprecedented access to the evolution of electrons in terms of spatial location, time resolution, and energy, representing a new type of 4D spectro-microscopy. Here in this work, we present measurements of semiconductor performance with a time resolution of 184 fs, electron kinetic energy resolution of 150 meV, and spatial resolution of about 150 nm or better. We obtained time-resolved micro-area photoelectron spectra and energy-resolved TR-PEEM images on the Pb island on Si(111). These experimental results suggest that this instrument has the potential to be a powerful tool for investigating the carrier dynamics in various heterojunctions, which will deepen our understanding of semiconductor properties in the submicron/nanometer spatial scales and ultrafast time scales.展开更多
Angle-resolved photoemission spectroscopy （ARPES） has played an important role in determining the band structure and the superconducting gap structure of iron-based superconductors. In this paper, from the ARPES per...Angle-resolved photoemission spectroscopy （ARPES） has played an important role in determining the band structure and the superconducting gap structure of iron-based superconductors. In this paper, from the ARPES perspective, we briefly review the main results from our group in recent years on the iron-based superconductors and their parent compounds, and depict our current understanding on the antiferromagnetism and superconductivity in these materials.展开更多
Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the ...Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy. At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes （OLEDs）.展开更多
The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great atten...The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu- intercalated form, Cuo.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mecha- nism. Here we report systematic high resolution angle-resolved photoemission （ARPES） studies on PdTe2 and Cuo.05PdTe2 single crystals, combined with the band structure calculations. We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cuo.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors.展开更多
We report comprehensive angle-resolved photoemission investigations on the electronic structures and nematicity of the parent compounds of the iron-based superconductors including CeFeAsO, BaFe2As2, NaFeAs, FeSe and u...We report comprehensive angle-resolved photoemission investigations on the electronic structures and nematicity of the parent compounds of the iron-based superconductors including CeFeAsO, BaFe2As2, NaFeAs, FeSe and undoped FeSe/SrTiO3 films with 1, 2 and 20 layers. While the electronic structure near tile Brillouin zone center F varies dramatically among different materials, the electronic structure near the Brillouin zone corners （M points）, as well as their temperature dependence, are rather similar. The electronic structure near the zone corners is dominated by the electronic nematicity that gives rise to a band splitting of the dxz and dyz bands below the nematie transition temperature. A clear relation is observed between the band splitting magnitude arid the onset temperature of nematicity. Our results may shed light on the origin of nematicity, its effect on the electronic structures, and its relation with superconductivity in the iron-based superconductors.展开更多
The two-dimensional electron gas(2DEG)generated at the LaAlO3/SrTiO3 interface has been in the focus of oxides re-search since its first discovery.Although oxygen vacancies play an important role in the generation of ...The two-dimensional electron gas(2DEG)generated at the LaAlO3/SrTiO3 interface has been in the focus of oxides re-search since its first discovery.Although oxygen vacancies play an important role in the generation of the insulator-to-metal transition of the SrTiO3 bare surface,their contribution at the LaAlO3/SrTiO3 interface remains unclear.In this work,we investigated a LaAlO3/SrTiO3 heterostructure with regional distribution of defect-based localized polar sites at the interface.Using static and time-resolved threshold photoemission electron microscopy,we prove that oxygen vacan-cies are induced near those polar sites,resulting in the increase of carrier density of the 2DEG states.In addition,oxy-gen-related surface states were uncovered,which we attributed to the release of lattice oxygen during the formation of oxygen vacancies.Such effects are mainly found spatially located around the defect sites at the buried interface,while other regions remain unaffected.Our results confirm that the itinerant electrons induced by oxygen vacancies can coex-ist with the charge transfer mechanism in the LaAlO3/SrTiO3 heterostructure,together leading to the formation of the metallic interface.These observations provide fundamental insights into the nature of LaAlO3/SrTiO3 interface based 2DEG and unique perspectives for potential applications.展开更多
High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for th...High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for the first time the existence of topologically nontrivial surface state with Dirac cone in PbTe2 superconductor. It is located at the Brillouin zone center and possesses helical spin texture. Distinct from the usual three-dimensional topological insulators where the Dirac cone of the surface state lies at the Fermi level, the Dirac point of the surface state in PdTe2 lies deeply below the Fermi level at - 1.75 eV binding energy and is well separated from the bulk states. The identification of topological surface state in PdTe2 superconductor deeply below the Fermi level provides a unique system to explore new phenomena and properties and opens a door for finding new topological materials in transition metal ehalcogenides.展开更多
We utilize high-resolution resonant angle-resolved photoemission spectroscopy(ARPES)to study the band structure and hybridization effect of the heavy-fermion compound Ce2 IrIn8.We observe a nearly flat band at the bin...We utilize high-resolution resonant angle-resolved photoemission spectroscopy(ARPES)to study the band structure and hybridization effect of the heavy-fermion compound Ce2 IrIn8.We observe a nearly flat band at the binding energy of 7 meV below the coherent temperature Tcoh^40 K,which characterizes the electrical resistance maximum and indicates the onset temperature of hybridization.However,the Fermi vector and the Fermi surface volume have little change around Tcoh,which challenges the widely believed evolution from a hightemperature small Fermi surface to a low-temperature large Fermi surface.Our experimental results of the band structure fit well with the density functional theory plus dynamic mean-field theory calculations.展开更多
We report direct nanoscale imaging of ultrafast plasmon in a gold dolmen nanostructure excited with the 7is laser pulses by combining the interferometric time-resolved technology with the three-photon photoemission el...We report direct nanoscale imaging of ultrafast plasmon in a gold dolmen nanostructure excited with the 7is laser pulses by combining the interferometric time-resolved technology with the three-photon photoemission electron microscopy （PEEM）. The interferometric time-resolved traces show that the plasmon mode beating pattern appears at the ends of the dimer slabs in the dolmen nanostructure as a result of coherent superposition of multiple localized surface plasmon modes induced by broad bandwidth of the ultrafast laser pulses. The PEEM measurement further discloses that in-phase of the oscillation field of two neighbor defects are surprisingly observed, which is attributed to the plasmon coupling between them. Furthermore, the control of the temporal delay between the pump and probe laser pluses could be utilized for manipulation of the near-field distribution. These findings deepen our understanding of ultrafast plasmon dynamics in a complex nanosystem.展开更多
Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p b...Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance.展开更多
We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, whic...We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10^17 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.展开更多
Valence band photoemission spectra (PES) for both bulk and nanocrystal CeO2 have been measured on and off resonance of Ce 4d-4f absorption edge. The PES show that the bulk and nanocrystal CeO2 of diameter ranging from...Valence band photoemission spectra (PES) for both bulk and nanocrystal CeO2 have been measured on and off resonance of Ce 4d-4f absorption edge. The PES show that the bulk and nanocrystal CeO2 of diameter ranging from 8nm to 50nm exhibit a peak near Fermi edge with binding energy of about 1.8eV. The 1.8eV peak shows a strong dependence on excitation energy, although it looks like the contribution of Ce3+ ion following the data reported in literatures. However, according to the results of resonance photoemission and X-ray absorption spectra at 1s edge, this electronic structure may be associated to the intermediate state charge transfer effects.展开更多
A theory of multiphoton photoemission is derived to explain the experimentally observed monotonic decrease with the wavelength in the electron yield of TiO_(2) nanoparticles(NPs)by as large as four orders of magnitude...A theory of multiphoton photoemission is derived to explain the experimentally observed monotonic decrease with the wavelength in the electron yield of TiO_(2) nanoparticles(NPs)by as large as four orders of magnitude.It is found that the fitting parameter corresponds to the energy position of Ti3d e_(g) and t_(2g) states,and the derived theory is a novel diagnostic of excited states in the conduction band,very importantly,applicable to individual NPs.The difference between four-photon slope NPs and three-photon slope NPs is attributed to the difference in defect density.The success of the theory in solving the puzzling result shows that thermal emission from high-lying levels may dominate over direct multiphoton ionization in solids when the photon number larger than four is required.展开更多
The iron-based superconductivity （IBSC） is a great challenge in correlated system. Angle-resolved photoemission spectroscopy （ARPES） provides electronic structure of the IBSCs, the pairing strength, and the order ...The iron-based superconductivity （IBSC） is a great challenge in correlated system. Angle-resolved photoemission spectroscopy （ARPES） provides electronic structure of the IBSCs, the pairing strength, and the order parameter symmetry. Here, we briefly review the recent progress in IBSCs and focus on the results from ARPES. The ARPES study shows the electronic structure of ＂122＂, ＂111＂, ＂11＂, and ＂122＂＂ families of IBSCs. It has been agreed that the IBSCs are unconventional superconductors in strong coupling region. The order parameter symmetry basically follows s form with considerable out-of-plane contribution.展开更多
We investigate the electronic structure of NbGeSb with non-symmorphic symmetry.We employ angle-resolved photoemission spectroscopy(ARPES)to observe and identify the bulk and surface states over the Brillouin zone.By u...We investigate the electronic structure of NbGeSb with non-symmorphic symmetry.We employ angle-resolved photoemission spectroscopy(ARPES)to observe and identify the bulk and surface states over the Brillouin zone.By utilizing high-energy photons,we identify the bulk Fermi surface and bulk nodal line along the direction X–R,while the Fermi surface of the surface state is observed by using low-energy photons.We observe the splitting of surface bands away from the high-symmetry point X.The density functional theory calculations on bulk and 1 to 5-layer slab models,as well as spin textures of NbGeSb,verify that the band splitting could be attributed to the Rashba-like spin–orbit coupling caused by space-inversion-symmetry breaking at the surface.These splitted surface bands cross with each other,forming two-dimensional Weyl-like crossings that are protected by mirror symmetry.Our findings provide insights into the two-dimensional topological and symmetry-protected band inversion of surface states.展开更多
A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit...A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit current density, opencircuit voltage, and conversion efficiency） of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10^-20cm^2, the conversion efficiencyη of the IPV cell always has a negative gain（△η 0） if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small（large） hole photoemission cross section and large（small） electron photoemission cross section,whose energy levels are near the valence（or conduction） band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12488201,12074411,12374066,12374154,and 12494593)the National Key Research and Development Program of China(Grant No.2022YFA1403900,2021YFA1401800,2022YFA1604200,2023YFA1406002,2024YFA1408301,and 2024YFA1400026)+3 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant Nos.XDB25000000 and XDB33000000)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0301800)the Youth Innovation Promotion Association of CAS(Grant No.Y2021006)Synergetic Extreme Condition User Facility(SECUF).
文摘Angle-resolved photoemission spectroscopy(ARPES)has become a cornerstone technique for elucidating the electronic structures of emergent quantum materials.Among these,kagome materials—distinguished by their two-dimensional lattice of corner-sharing triangles—provide a fertile ground for investigating exotic quantum phenomena,driven by geometric frustration,electronic correlation,and topology.In this review,we present an overview of recent ARPES studies on transition-metal kagome materials.We first outline the fundamental features of their electronic structures,including van Hove singularities,Dirac points,and flat bands,and discuss the novel quantum states that arise from many-body interactions within the kagome lattice.We then highlight key ARPES investigations into these unique electronic structures,detailing their manifestation and associated quantum states in representative kagome materials.Finally,we offer a forward-looking perspective on the potential of ARPES to uncover new quantum phenomena and its broader implications for the study of underlying physics in kagome materials.
基金supported by the National Natural Science Foundation of China(Grant Nos.12488201 by X.J.Z.,12374066 by L.Z.,and 12374154 by X.T.L.)the National Key Research and Development Program of China(Grant Nos.2021YFA1401800 by X.J.Z.,2022YFA1604200 by L.Z.,2022YFA1403900 by G.D.L.and 2023YFA1406000by X.T.L.)+3 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB25000000by X.J.Z.)Innovation Program for Quantum Science and Technology(Grant No.2021ZD0301800 by X.J.Z.)the Youth Innovation Promotion Association of CAS(Grant No.Y2021006 by L.Z.)the Synergetic Extreme Condition User Facility(SECUF)。
文摘The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ)(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectroscopy(ARPES).Bi2223single crystals with different doping levels are prepared by controlled annealing,which cover the underdoped,optimallydoped and overdoped regions.The electronic phase diagram of Bi2223 is established which describes the Tcdependence on the sample doping level.The doping dependence of the nodal Fermi momentum for the outer(OP)and inner(IP)CuO_(2)planes is determined.Charge distribution imbalance between the OP and IP CuO_(2)planes is quantified,showing enhanced disparity with increasing doping.Nodal band dispersions demonstrate a prominent kink at~94 meV in the IP band,attributed to the unique Cu coordination in the IP plane,while a weaker~60 meV kink is observed in the OP band.The nodal Fermi velocity of both OP and IP bands is nearly constant at~1.62 eV·A independent of doping.These results provide important information to understand the origin of high Tcand superconductivity mechanism in high temperature cuprate superconductors.
文摘Molecular frame photoemission is a very sensitive probe of the photoionization （PI） dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV circularly polarized synchrotron radiation at SOLEIL at the level of the molecular frame photoelectron angular distributions （MFPADs）. We use the vector correlation method which combines imaging and time-of-flight resolved electron-ion coincidence techniques, and a generalized formalism for the expression of the Ⅰ（χ, θe, Фe） MFPADs, where χ is the orientation of the molecular axis with respect to the light quantization axis and （θe, Фe） the electron emission direction in the molecular frame. Selected MFPADs for a molecule aligned parallel or perpendicular to linearly polarized light, or perpendicular to the propagation axis of circularly polarized light, are presented for dissociative photoionization （DPI） of D2 at two photon excitation energies, hv=19 eV, where direct PI is the only channel opened, and hv=32.5 eV, i.e. in the region involving resonant excitation of Q1 and Q2 doubly excited state series. We discuss in particular the properties of the circular dichroism characterizing photoemission in the molecular frame for direct and resonant PI. In the latter case, a remarkable behavior is observed which may be attributed to the interference occurring between undistinguishable autoionization decay channels.
文摘A surface femtosecond two-photon photoemission （2PPE） spectrometer devoted to the study of ultrafast excited electron dynamics and photochemical kinetics on metal and metal oxide surfaces has been constructed. Low energy photoelectrons are measured using a hemispherical electron energy analyzer with an imaging detector that allows us to detect the energy and the angular distributions of the photoelectrons simultaneously. A Mach-Zehnder interferom- eter was built for the time-resolved 2PPE （TR-2PPE） measurement to study ultrafast surface excited electron dynamics, which was demonstrated on the Cu（111） surface. A scheme for measuring time-dependent 2PPE （TD-2PPE） spectra has also been developed for studies of surface photochemistry. This technique has been applied to a preliminary study on the photochemical kinetics on ethanol/TiO2（110）. We have also shown that the ultrafast dynamics of photoinduced surface excited resonances can be investigated in a reliable way by combining the TR-2PPE and TD-2PPE techniques.
基金supported by the National Key R&D Program (No.2018YFA0208700 and No.2016YFA0200602)the National Natural Science Foundation of China (No.21688102 and No.21403222)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences (No.XDB17000000)the Youth Innovation Promotion Association of Chinese Academy of Sciences (No.2017224)
文摘The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal resolutions. Recently, we have successfully set up a timeresolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique to measure electron densities at specific energy levels in space. This instrument provides us an unprecedented access to the evolution of electrons in terms of spatial location, time resolution, and energy, representing a new type of 4D spectro-microscopy. Here in this work, we present measurements of semiconductor performance with a time resolution of 184 fs, electron kinetic energy resolution of 150 meV, and spatial resolution of about 150 nm or better. We obtained time-resolved micro-area photoelectron spectra and energy-resolved TR-PEEM images on the Pb island on Si(111). These experimental results suggest that this instrument has the potential to be a powerful tool for investigating the carrier dynamics in various heterojunctions, which will deepen our understanding of semiconductor properties in the submicron/nanometer spatial scales and ultrafast time scales.
基金supported by the National Natural Science Foundation of Chinathe National Basic Research Program of China(Grant Nos.2012CB921400,2011CB921802,and 2011CBA00112)
文摘Angle-resolved photoemission spectroscopy （ARPES） has played an important role in determining the band structure and the superconducting gap structure of iron-based superconductors. In this paper, from the ARPES perspective, we briefly review the main results from our group in recent years on the iron-based superconductors and their parent compounds, and depict our current understanding on the antiferromagnetism and superconductivity in these materials.
基金Project supported by the National Natural Science Foundation of China （Grant No 60276026） and the Natural Science Foundation of Gansu Province, China （Grant No ZS031-A25-012-G）.
文摘Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy. At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes （OLEDs）.
基金Project supported by the National Natural Science Foundation of China(Grant No.11190022)the National Basic Research Program of China(Grant Nos.2011CB921703 and 2011CBA00110)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB07020300)
文摘The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu- intercalated form, Cuo.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mecha- nism. Here we report systematic high resolution angle-resolved photoemission （ARPES） studies on PdTe2 and Cuo.05PdTe2 single crystals, combined with the band structure calculations. We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cuo.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11190022,11334010 and 11534007the National Basic Research Program of China under Grant No 2015CB921000the Strategic Priority Research Program(B)of Chinese Academy of Sciences under Grant No XDB07020300
文摘We report comprehensive angle-resolved photoemission investigations on the electronic structures and nematicity of the parent compounds of the iron-based superconductors including CeFeAsO, BaFe2As2, NaFeAs, FeSe and undoped FeSe/SrTiO3 films with 1, 2 and 20 layers. While the electronic structure near tile Brillouin zone center F varies dramatically among different materials, the electronic structure near the Brillouin zone corners （M points）, as well as their temperature dependence, are rather similar. The electronic structure near the zone corners is dominated by the electronic nematicity that gives rise to a band splitting of the dxz and dyz bands below the nematie transition temperature. A clear relation is observed between the band splitting magnitude arid the onset temperature of nematicity. Our results may shed light on the origin of nematicity, its effect on the electronic structures, and its relation with superconductivity in the iron-based superconductors.
基金supported by the National Key Research and Development Program of China under Grant Nos.2018YFB2200403 and 2018YFA0704404the National Natural Science Foundation of China under Grant Nos.61775003,11734001,91950204,11527901+1 种基金Beijing Municipal Science&Technology Commission No.Z191100007219001support by the Deutsche Forschungsgemeinschaft(DFG,German Research Foundation)-TRR 173-268565370(projects A02).
文摘The two-dimensional electron gas(2DEG)generated at the LaAlO3/SrTiO3 interface has been in the focus of oxides re-search since its first discovery.Although oxygen vacancies play an important role in the generation of the insulator-to-metal transition of the SrTiO3 bare surface,their contribution at the LaAlO3/SrTiO3 interface remains unclear.In this work,we investigated a LaAlO3/SrTiO3 heterostructure with regional distribution of defect-based localized polar sites at the interface.Using static and time-resolved threshold photoemission electron microscopy,we prove that oxygen vacan-cies are induced near those polar sites,resulting in the increase of carrier density of the 2DEG states.In addition,oxy-gen-related surface states were uncovered,which we attributed to the release of lattice oxygen during the formation of oxygen vacancies.Such effects are mainly found spatially located around the defect sites at the buried interface,while other regions remain unaffected.Our results confirm that the itinerant electrons induced by oxygen vacancies can coex-ist with the charge transfer mechanism in the LaAlO3/SrTiO3 heterostructure,together leading to the formation of the metallic interface.These observations provide fundamental insights into the nature of LaAlO3/SrTiO3 interface based 2DEG and unique perspectives for potential applications.
基金the National Natural Science Foundation of China under Grant Nos 11190022,11274359 and 11422428the National Basic Research Program of China under Grant Nos 2011CB921703,2011CBA00110,2011CBA00108 and 2013CB921700the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant Nos XDB07020300 and XDB07020100
文摘High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for the first time the existence of topologically nontrivial surface state with Dirac cone in PbTe2 superconductor. It is located at the Brillouin zone center and possesses helical spin texture. Distinct from the usual three-dimensional topological insulators where the Dirac cone of the surface state lies at the Fermi level, the Dirac point of the surface state in PdTe2 lies deeply below the Fermi level at - 1.75 eV binding energy and is well separated from the bulk states. The identification of topological surface state in PdTe2 superconductor deeply below the Fermi level provides a unique system to explore new phenomena and properties and opens a door for finding new topological materials in transition metal ehalcogenides.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFA0401000,2015CB921300,2016YFA0300303,2016YFA0401002 and 2017YFA0303103the National Natural Science Foundation of China under Grant Nos 11674371,11774401 and 11874330+4 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB07000000the Beijing Municipal Science and Technology Commission under Grant No Z171100002017018the Hundred-Talent Program(type C)of the Chinese Academy of Sciencesthe Sino-Swiss Science and Technology Cooperation under Grant No IZLCZ2-170075the Swiss National Science Foundation under Grant No 200021-159678
文摘We utilize high-resolution resonant angle-resolved photoemission spectroscopy(ARPES)to study the band structure and hybridization effect of the heavy-fermion compound Ce2 IrIn8.We observe a nearly flat band at the binding energy of 7 meV below the coherent temperature Tcoh^40 K,which characterizes the electrical resistance maximum and indicates the onset temperature of hybridization.However,the Fermi vector and the Fermi surface volume have little change around Tcoh,which challenges the widely believed evolution from a hightemperature small Fermi surface to a low-temperature large Fermi surface.Our experimental results of the band structure fit well with the density functional theory plus dynamic mean-field theory calculations.
基金Supported by the National Basic Research Program of China under Grant No 2013CB922404the National Natural Science Foundation of China under Grant Nos 11474040,11474039,61605017 and 61575030the Project of Changchun Science and Technology Bureau under Grant No 14KP007
文摘We report direct nanoscale imaging of ultrafast plasmon in a gold dolmen nanostructure excited with the 7is laser pulses by combining the interferometric time-resolved technology with the three-photon photoemission electron microscopy （PEEM）. The interferometric time-resolved traces show that the plasmon mode beating pattern appears at the ends of the dimer slabs in the dolmen nanostructure as a result of coherent superposition of multiple localized surface plasmon modes induced by broad bandwidth of the ultrafast laser pulses. The PEEM measurement further discloses that in-phase of the oscillation field of two neighbor defects are surprisingly observed, which is attributed to the plasmon coupling between them. Furthermore, the control of the temporal delay between the pump and probe laser pluses could be utilized for manipulation of the near-field distribution. These findings deepen our understanding of ultrafast plasmon dynamics in a complex nanosystem.
基金the National Natural Science Foundation of China(NSFC)for financial support(Grant No.10074063)The Chinese Academy of Scicences(No.KJ952-S1-418)supported by 100-Talent Research Program of The Chinese Academy of Sciences.
文摘Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance.
基金supported by the National Natural Science Foundation of China (Grant No. 60871012)the Research Fund of Nanjing University of Science and Technology (Grant No. 2010ZYTS032)
文摘We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10^17 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.
基金the National Natural Science Foundation of China(NSFC)for financial support under grants No.10074063The Chinese Academy of Science under No.KJ952-S1-418supported by 100-Talent Reasearch Program of The Chinese Academy of Sciences.
文摘Valence band photoemission spectra (PES) for both bulk and nanocrystal CeO2 have been measured on and off resonance of Ce 4d-4f absorption edge. The PES show that the bulk and nanocrystal CeO2 of diameter ranging from 8nm to 50nm exhibit a peak near Fermi edge with binding energy of about 1.8eV. The 1.8eV peak shows a strong dependence on excitation energy, although it looks like the contribution of Ce3+ ion following the data reported in literatures. However, according to the results of resonance photoemission and X-ray absorption spectra at 1s edge, this electronic structure may be associated to the intermediate state charge transfer effects.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.91850109,11474040,61605017,and 61775021)the“111”Project of China(Grant No.D17017).
文摘A theory of multiphoton photoemission is derived to explain the experimentally observed monotonic decrease with the wavelength in the electron yield of TiO_(2) nanoparticles(NPs)by as large as four orders of magnitude.It is found that the fitting parameter corresponds to the energy position of Ti3d e_(g) and t_(2g) states,and the derived theory is a novel diagnostic of excited states in the conduction band,very importantly,applicable to individual NPs.The difference between four-photon slope NPs and three-photon slope NPs is attributed to the difference in defect density.The success of the theory in solving the puzzling result shows that thermal emission from high-lying levels may dominate over direct multiphoton ionization in solids when the photon number larger than four is required.
基金supported by the National Natural Science Foundation of China(Grant No.11274381)the National Basic Research Program of China(GrantNo.2010CB923000)
文摘The iron-based superconductivity （IBSC） is a great challenge in correlated system. Angle-resolved photoemission spectroscopy （ARPES） provides electronic structure of the IBSCs, the pairing strength, and the order parameter symmetry. Here, we briefly review the recent progress in IBSCs and focus on the results from ARPES. The ARPES study shows the electronic structure of ＂122＂, ＂111＂, ＂11＂, and ＂122＂＂ families of IBSCs. It has been agreed that the IBSCs are unconventional superconductors in strong coupling region. The order parameter symmetry basically follows s form with considerable out-of-plane contribution.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFA1403803)H.M.is supported by the Fundamental Research Funds for the Central Universities,and the Research Funds of Renmin University of China(Grant No.22XNH099)+7 种基金The results of DFT calculations described in this paper are supported by HPC Cluster of ITP-CAS.M.L.is supported by the National Natural Science Foundation of China(Grant No.12204536)the Fundamental Research Funds for the Central Universities,and the Research Funds of People’s Public Security University of China(PPSUC)(Grant No.2023JKF02ZK09)T.L.X.is supported by the National Key R&D Program of China(Grant No.2019YFA0308602)the National Natural Science Foundation of China(Grant Nos.12074425 and 11874422)Y.Y.W.is supported by the National Natural Science Foundation of China(Grant No.12104011)H.Y.L.is supported by the National Natural Science Foundation of China(Grant No.12074213)the Major Basic Program of Natural Science Foundation of Shandong Province(Grant No.ZR2021ZD01)the Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province.
文摘We investigate the electronic structure of NbGeSb with non-symmorphic symmetry.We employ angle-resolved photoemission spectroscopy(ARPES)to observe and identify the bulk and surface states over the Brillouin zone.By utilizing high-energy photons,we identify the bulk Fermi surface and bulk nodal line along the direction X–R,while the Fermi surface of the surface state is observed by using low-energy photons.We observe the splitting of surface bands away from the high-symmetry point X.The density functional theory calculations on bulk and 1 to 5-layer slab models,as well as spin textures of NbGeSb,verify that the band splitting could be attributed to the Rashba-like spin–orbit coupling caused by space-inversion-symmetry breaking at the surface.These splitted surface bands cross with each other,forming two-dimensional Weyl-like crossings that are protected by mirror symmetry.Our findings provide insights into the two-dimensional topological and symmetry-protected band inversion of surface states.
基金supported by the National Natural Science Foundation of China(Grant Nos.61464007,61306084,11664025,and 51561022)the Postdoctoral Science Foundation of Jiangxi Province of China(Grant Nos.2014KY32,2013RC08,and 2015KY12)+1 种基金the Natural Science Foundation of Jiangxi Province of China(Grant Nos.20151BAB207055 and 20161BAB201012)the Postdoctoral Science Foundation of China(Grant No.2016M592115)
文摘A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit current density, opencircuit voltage, and conversion efficiency） of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10^-20cm^2, the conversion efficiencyη of the IPV cell always has a negative gain（△η 0） if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small（large） hole photoemission cross section and large（small） electron photoemission cross section,whose energy levels are near the valence（or conduction） band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.
