In the era of rapidly expanding wireless technologies,the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers(LNAs).A two-stage LNA base...In the era of rapidly expanding wireless technologies,the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers(LNAs).A two-stage LNA based on the GaAs/InGaAs pseudomorphic high electron mobility transistor(pHEMT)with a relatively large gate length of 2μm is designed for high-performance 2.4-GHz wireless communication.The I-V characteristic and two-port high-frequency S-parameter of the transistor are measured by on-wafer probing techniques.The results indicate that a discrete transistor with a gate size of 2μm×50μm can provide a maximum transconductance of 16 mS,corresponding to a maximum current-gain cut-off frequency of 7 GHz and maximum oscillation frequency of 8 GHz at the 1-V drain-source voltage.With the impedance matching networks based transmission line technique,an extended integrated layout structure is designed and simulated by using the momentum simulation tool embedded in Advanced Design System,to alleviate the trade-off between noise figure(NF)and gain of the circuit.The findings show that the transistor based on the GaAs/InGaAs technology is capable of delivering high performance with power consumption low to 16 mW,where the maximum simulated gain of 21.5 dB and minimum NF of 2.4 dB are achieved.In terms of linearity,the proposed LNA provides terrific output 1-dB compression of-3 dBm and output third-order intercept point values of 10 dBm.The bandwidth of 0.12 GHz and figure-of-merit of 12 are obtained,which are comparable to that of existing LNAs based on pHEMT.Such a device may benefit to accelerate the development of more robust and power-efficient front-end modules in modern wireless systems,especially for advancing performance-driven applications.展开更多
基金supported by Engineering and Physical Sciences Research Council(EPSRC)under Grant No.EP/P006973/1.
文摘In the era of rapidly expanding wireless technologies,the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers(LNAs).A two-stage LNA based on the GaAs/InGaAs pseudomorphic high electron mobility transistor(pHEMT)with a relatively large gate length of 2μm is designed for high-performance 2.4-GHz wireless communication.The I-V characteristic and two-port high-frequency S-parameter of the transistor are measured by on-wafer probing techniques.The results indicate that a discrete transistor with a gate size of 2μm×50μm can provide a maximum transconductance of 16 mS,corresponding to a maximum current-gain cut-off frequency of 7 GHz and maximum oscillation frequency of 8 GHz at the 1-V drain-source voltage.With the impedance matching networks based transmission line technique,an extended integrated layout structure is designed and simulated by using the momentum simulation tool embedded in Advanced Design System,to alleviate the trade-off between noise figure(NF)and gain of the circuit.The findings show that the transistor based on the GaAs/InGaAs technology is capable of delivering high performance with power consumption low to 16 mW,where the maximum simulated gain of 21.5 dB and minimum NF of 2.4 dB are achieved.In terms of linearity,the proposed LNA provides terrific output 1-dB compression of-3 dBm and output third-order intercept point values of 10 dBm.The bandwidth of 0.12 GHz and figure-of-merit of 12 are obtained,which are comparable to that of existing LNAs based on pHEMT.Such a device may benefit to accelerate the development of more robust and power-efficient front-end modules in modern wireless systems,especially for advancing performance-driven applications.
