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Linear Enhancement of Spin-Orbit Torque and Absence of Bulk Rashba Spin Splitting in Perpendicularly Magnetized[Pt/Co/W]_(n)Superlattices
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作者 Zhihao Yan Zhengxiao Li +2 位作者 Lujun Zhu Xin Lin Lijun Zhu 《Chinese Physics Letters》 2025年第9期126-131,共6页
The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-per... The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies. 展开更多
关键词 development magnetic heterostructures perpendicular magnetic anisotropy oxidized silicon substrates perpendicular magnetic anisotropy pma strong spin orbit torque spin Hall effect Pt Co W superlattice macrospin performance
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Perpendicular magnetic anisotropy of Pd/Co_(2)MnSi/Co/Pd multilayer
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作者 Xiaoqi Qin Jiaxing Tan +2 位作者 Xianwu Xiu Wentian Cao Shuyun Wang 《Chinese Physics B》 2025年第3期534-539,共6页
Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films w... Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films was studied by optimizing the growth conditions and thickness of each film layer.The optimal structure of the multilayer films was Pd(6 nm)/CMS(5 nm)/Co(2 nm)/Pd(1 nm).Its abnormal Hall resistance(R_(Hall)),coercivity(H_(c))and effective magnetic anisotropy constant(Keff)are 0.08Ω,284 Oe and 1.36 Merg/cm^(3),respectively,which are 100%,492%,and 183%higher than the corresponding values(0.04Ω,48 Oe,and 0.48 Merg/cm^(3))of the Pd(6 nm)/Co(1 nm)/Pd(3 nm)trilayer films.The analysis shows that the increases of the above values are the result of the Pd/CMS interface effect and CMS/Co interface ferromagnetic(FM)coupling,and that it is closely related to the thickness of each film layer in the multilayer films and the growth conditions of the multilayer films. 展开更多
关键词 perpendicular magnetic anisotropy(PMA) Co_(2)MnSi(CMS) CO abnormal Hall resistance(R_(Hall)) coercivity(H_(c))
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Perpendicular-Cutdepth:Perpendicular Direction Depth Cutting Data Augmentation Method
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作者 Le Zou Linsong Hu +2 位作者 Yifan Wang Zhize Wu Xiaofeng Wang 《Computers, Materials & Continua》 SCIE EI 2024年第4期927-941,共15页
Depth estimation is an important task in computer vision.Collecting data at scale for monocular depth estimation is challenging,as this task requires simultaneously capturing RGB images and depth information.Therefore... Depth estimation is an important task in computer vision.Collecting data at scale for monocular depth estimation is challenging,as this task requires simultaneously capturing RGB images and depth information.Therefore,data augmentation is crucial for this task.Existing data augmentationmethods often employ pixel-wise transformations,whichmay inadvertently disrupt edge features.In this paper,we propose a data augmentationmethod formonocular depth estimation,which we refer to as the Perpendicular-Cutdepth method.This method involves cutting realworld depth maps along perpendicular directions and pasting them onto input images,thereby diversifying the data without compromising edge features.To validate the effectiveness of the algorithm,we compared it with existing convolutional neural network(CNN)against the current mainstream data augmentation algorithms.Additionally,to verify the algorithm’s applicability to Transformer networks,we designed an encoder-decoder network structure based on Transformer to assess the generalization of our proposed algorithm.Experimental results demonstrate that,in the field of monocular depth estimation,our proposed method,Perpendicular-Cutdepth,outperforms traditional data augmentationmethods.On the indoor dataset NYU,our method increases accuracy from0.900 to 0.907 and reduces the error rate from0.357 to 0.351.On the outdoor dataset KITTI,our method improves accuracy from 0.9638 to 0.9642 and decreases the error rate from 0.060 to 0.0598. 展开更多
关键词 perpendicular depth estimation data augmentation
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Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]_(2)multilayers
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作者 Lin-Ao Huang Mei-Yu Wang +10 位作者 Peng Wang Yuan Yuan Ruo-Bai Liu Tian-Yu Liu Yu Lu Jia-Rui Chen Lu-Jun Wei Wei Zhang Biao You Qing-Yu Xu Jun Du 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第2期587-592,共6页
The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]_(2)multilayers with varying the NiO la... The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]_(2)multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer. 展开更多
关键词 perpendicular magnetic anisotropy perpendicular exchange bias epitaxial growth random field model
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Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy 被引量:7
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作者 Shuai Liu Guang-Hua Yu +3 位作者 Mei-Yin Yang Hai-Lang Ju Bao-He Li Xiao-Bai Chen 《Rare Metals》 SCIE EI CAS CSCD 2014年第6期646-651,共6页
Pseudo spin valves(SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers.... Pseudo spin valves(SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt(5.0 nm)/[Co(0.4 nm)/Pt(0.6 nm)]3/Co(0.4 nm)/Cu(3.0 nm)and Cu(3.0 nm)/[Co(0.4 nm)/Pt(1.5 nm)]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity(HC) of both layers. The perpendicular giant magnetoresistance(GMR) of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV. 展开更多
关键词 perpendicular magnetic anisotropy Spin valve Giant magnetoresistance Ferromagnetic coupling Co/Pt multilayers
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Magnetron sputtering deposition of [FePt/Ag]_n multilayers for perpendicular recording 被引量:5
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作者 WANG Fang XU Xiaohong WU Haishun 《Rare Metals》 SCIE EI CAS CSCD 2006年第1期47-50,共4页
[FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions (n) on ... [FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions (n) on the structure and magnetic properties of the multilayers were investigated. It was found that the difference between in-plane and out-of-plane coercivities varied with an increase of inserted Ag layer thickness in the [FePt 2 nm/Ag x nm]10 multilayers. The ratio of out-of-plane coercivity to in-plane coercivity reached the maximum value with the Ag layer thickness of 5 nm, indicating that the Ag layer thickness plays an important role in obtaining perpendicular orientation. For the [FePt 2 nm/Ag 5 um]n multilayers, perpendicular orientation is also influenced by n. The maximum value of the ratio of out-of-plane coercivity to in-plane coercivity appeared when n was given as 8. It was found that the [FePt 2 nm/Ag 5 nm]8 had a high perpendicular coercivity of 520 kA/m and a low in-plane one of 88 kA/m, which shows a strong perpendicular anisotropy. 展开更多
关键词 [FePt/Ag]n multilayer perpendicular orientation magnetron sputtering COERCIVITY
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Electron-Induced Perpendicular Graphene Sheets Embedded Porous Carbon Film for Flexible Touch Sensors 被引量:7
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作者 Sicheng Chen Yunfei Wang +2 位作者 Lei Yang Fouad Karouta Kun Sun 《Nano-Micro Letters》 SCIE EI CAS CSCD 2020年第10期192-204,共13页
Graphene-based materials on wearable electronics and bendable displays have received considerable attention for the mechanical flexibility,superior electrical conductivity,and high surface area,which are proved to be ... Graphene-based materials on wearable electronics and bendable displays have received considerable attention for the mechanical flexibility,superior electrical conductivity,and high surface area,which are proved to be one of the most promising candidates of stretching and wearable sensors.However,polarized electric charges need to overcome the barrier of graphene sheets to cross over flakes to penetrate into the electrode,as the graphene planes are usually parallel to the electrode surface.By introducing electron-induced perpendicular graphene(EIPG)electrodes incorporated with a stretchable dielectric layer,a flexible and stretchable touch sensor with"in-sheet-chargestransportation"is developed to lower the resistance of carrier movement.The electrode was fabricated with porous nanostructured architecture design to enable wider variety of dielectric constants of only 50-μm-thick Ecoflex layer,leading to fast response time of only 66 ms,as well as high sensitivities of 0.13 kPa-1 below 0.1 kPa and 4.41 MPa-1 above 10 kPa,respectively.Moreover,the capacitance-decrease phenomenon of capacitive sensor is explored to exhibit an object recognition function in one pixel without any other integrated sensor.This not only suggests promising applications of the EIPG electrode in flexible touch sensors but also provides a strategy for internet of things security functions. 展开更多
关键词 Electron-induced perpendicular graphene Porous nanostructure Dual parameter Flexible capacitance
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Nonmonotonic effects of perpendicular magnetic anisotropy on current-driven vortex wall motions in magnetic nanostripes 被引量:2
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作者 苏垣昌 雷海洋 胡经国 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期527-531,共5页
In a magnetic nanostripe, the effects of perpendicular magnetic anisotropy(PMA) on the current-driven horizontal motion of vortex wall along the stripe and the vertical motion of the vortex core are studied by micro... In a magnetic nanostripe, the effects of perpendicular magnetic anisotropy(PMA) on the current-driven horizontal motion of vortex wall along the stripe and the vertical motion of the vortex core are studied by micromagnetic simulations.The results show that the horizontal and vertical motion can generally be monotonously enhanced by PMA. However, when the current is small, a nonmonotonic phenomenon for the horizontal motion is found. Namely, the velocity of the horizontal motion firstly decreases and then increases with the increase of the PMA. We find that the reason for this is that the PMA can firstly increase and then decrease the confining force induced by the confining potential energy. In addition, the PMA always enhances the driving force induced by the current. 展开更多
关键词 domain wall motion CURRENT perpendicular magnetic anisotropy micromagnetic simulation
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Enhancement of post-annealing stability in Co/Ni multilayers with perpendicular magnetic anisotropy by Au insertion layers 被引量:2
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作者 Yi Cao Ming-Hua Li +4 位作者 Kang Yang Xi Chen Guang Yang Qian-Qian Liu Guang-Hua Yu 《Rare Metals》 SCIE EI CAS CSCD 2016年第10期779-783,共5页
Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy (PMA) was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- net... Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy (PMA) was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- netic anisotropy density (Kef0 for Ta(3)/Pt(2)/[Co(0.3)/ Ni(0.6)/Au(0.3)]× 3/Co(0.3)/Pt(1)/Ta(3) (in nm) keeps at 0.48 × 105 J·m^-3. Scanning transmission electron micro- scopy-high-angle annular dark field (STEM-HAADF) analysis shows that the diffusion between Ni and Co layers is obstructed by the Au insertion layers among them, which is responsible for the post-annealing stability enhancement of the multilayers. Multilayers with Pt insertion layers were also investigated as reference samples in this work. Com- pared with Pt-layer-inserted Co/Ni multilayers, the Au insertion layers are found to bring seldom interfacial PMA to the multilayers, making it competitive in being employed to enhance the post-annealing stability of PMA Co/Ni multilayers which are used for magnetic random access memory devices (MRAM). 展开更多
关键词 Co/Ni multilayers perpendicular magnetic anisotropy Post-annealing stability Au insertion layers
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Perpendicular intergrowth ZSM-5 plates with shortened 10-MR pores 被引量:2
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作者 Ensheng Zhan Zhiping Xiong +4 位作者 Yan Zhou Mingrun Li Pengfei Wang Weibin Fan Wenjie Shen 《Chinese Journal of Catalysis》 SCIE EI CAS CSCD 北大核心 2020年第7期1132-1139,共8页
ZSM-5 plates with a perpendicular intergrowth structure was synthesized by using a simple amine as the structure directing agent under hydrothermal conditions,in which the mother plate and the perpendicularly standing... ZSM-5 plates with a perpendicular intergrowth structure was synthesized by using a simple amine as the structure directing agent under hydrothermal conditions,in which the mother plate and the perpendicularly standing plates oriented along the(010)and(100)planes of MFI crystals,respectively.During the crystallization process,the mother plate was initially formed on the surface of the amorphous solid gel,while a set of parallel plates perpendicularly grew on its surface,via a homogeneous nucleation mechanism.The mother plate and the perpendicular plates had a similar thickness of 100-200 nm and were characterized by considerably shortened straight and zigzag 10 member ring pores,respectively.This unique intergrowth structure greatly facilitated the diffusion of the reactive molecules in HZSM-5 crystals during methanol conversion to hydrocarbons. 展开更多
关键词 ZSM-5 Plate structure perpendicular Intergrowth Channel length Hierarchical structure Molecule diffusion
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Tailoring perpendicular magnetic anisotropy in Co/Pt multilayers by interface doping with ultrathin Fe layer 被引量:2
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作者 Xi Chen Shao-Long Jiang +3 位作者 Dong-Wei Wang Kang Yang Jin-Hui Lu Guang-Hua Yu 《Rare Metals》 SCIE EI CAS CSCD 2022年第11期3823-3827,共5页
The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of ... The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of the samples were measured by vibrating sample magnetometer(VSM) and X-ray diffraction(XRD) and highresolution transmission electron microscopy(HRTEM),respectively.It is found that the PMA is strongly dependent on the interface where Fe layer was doped.When Fe layer was doped at Co/Pt interface where Pt was deposited on Co,the PMA decreases monotonically with Fe layer thickness(tFe) increasing.However,when Fe layer was doped at Pt/Co interface where Co was deposited on Pt,the PMA shows a peak at t_(Fe)=0.1 nm.It is considered that the PMA variation is mainly due to the tuning in the electron occupation states of 3 d orbits at Fe-doped Pt/Co interface.Furthermore,the annealing stability of PMA can also be improved when Fe layer was doped at Pt/Co interface.HRTEM results demonstrate that the magnetic anisotropy evolution is mainly caused by anneal-induced interdiffusion. 展开更多
关键词 perpendicular magnetic anisotropy Co/Pt multilayers Interface doping Annealing stability INTERDIFFUSION
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Tunable perpendicular anisotropic magnetoresistance in CoO/Co/Pt heterostructures 被引量:2
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作者 Qian-Qian Liu Guang Yang +5 位作者 Jing-Yan Zhang Guo-Nan Feng Chun Feng Qian Zhan Ming-Hua Li Guang-Hua Yu 《Rare Metals》 SCIE EI CAS CSCD 2023年第2期579-584,共6页
Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isot... Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isotropic anisotropic magnetoresistance(AMR),AMR with geometric size effect,and interfacial effect.A reversal in sign of perpendicular AMR is found in the film CoO(3 nm)/Co(3 nm)/Pt(3 nm)compared to the film CoO(3 nm)/Co(3 nm)/CoO(3 nm),which is associated with Pt.Moreover,perpendicular AMR is tunable in the films CoO(3 nm)/Co(3 nm)/CoO(t)/Pt(3 nm)and CoO(3 nm)/Co(3 nm)/Pt(t)/CoO(3 nm)at will,with either positive or negative value,by varying the inserting layer thickness.The electronic structure information of the samples was measured by X-ray photoelectron spectroscopy(XPS).The spin-related transport and XPS results manifest that magnetic proximity effect,surface scattering,together with oxygen migration contribute to the tunable function of Pt. 展开更多
关键词 perpendicular anisotropic magnetoresistance Magnetic proximity effect Surface scattering X-ray photoelectron spectroscopy
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Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co_2MnAl 被引量:1
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作者 Zhi-Feng Yu Jun Lu +5 位作者 Hai-Long Wang Xu-Peng Zhao Da-Hai Wei Jia-Lin Ma Si-Wei Mao Jian-Hua Zhao 《Chinese Physics Letters》 SCIE CAS CSCD 2019年第6期79-82,共4页
Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)A... Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)Al(CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy. Tunable perpendicular magnetic anisotropy(PMA) from 3.41 Merg/cm^3 to 1.88 Merg/cm^3 with the thickness increasing from 10 nm to 30 nm is found,attributed to the relaxation of residual compressive strain. Moreover, comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction, the CMA electrode has a higher magnetic thermal stability with more volume involved. The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques. This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization. 展开更多
关键词 TUNABLE perpendicular Magnetic ANISOTROPY Full-Heusler Alloy Co2MnAl different thicknesses
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Perpendicular magnetic tunnel junction and its application in magnetic random access memory 被引量:1
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作者 刘厚方 Syed Shahbaz Ali 韩秀峰 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第7期13-21,共9页
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. ... Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory. 展开更多
关键词 magnetic random access memory perpendicular magnetic anisotropy spin transfer torque effect magnetic tunnel junction
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Magnetic properties of a Pt/Co_2 FeAl/MgO structure with perpendicular magnetic anisotropy 被引量:1
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作者 李晓其 徐晓光 +4 位作者 王圣 吴勇 张德林 苗军 姜勇 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第10期446-450,共5页
Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl(CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy(PMA) of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-n... Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl(CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy(PMA) of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization(M s) changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied. 展开更多
关键词 HALF-METALLIC perpendicular magnetic anisotropy
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RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers 被引量:1
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作者 Runze Li Yucai Li +1 位作者 Yu Sheng Kaiyou Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第2期584-588,共5页
We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputterin... We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films.The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness.According to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of PMA.The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be modified.Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices. 展开更多
关键词 perpendicular magnetic anisotropy RF magnetron sputtering ion irradiation spin orbit torque
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Multiple modes of perpendicular magnetization switching scheme in single spin-orbit torque device 被引量:1
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作者 Tong-Xi Liu Zhao-Hao Wang +4 位作者 Min Wang Chao Wang Bi Wu Wei-Qiang Liu Wei-Sheng Zhao 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第10期283-287,共5页
Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetizatio... Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetization switching.However,it is a challenge that so many multiple modes of magnetization switching are integrated together.Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device.The mode of switching can be easily changed by tuning the amplitude of the applied current.We show that the field-like torque plays an important role in switching process.The field-like torque induces the precession of the magnetization in the case of unipolar switching,however,the field-like torque helps to generate an effective zcomponent torque in the case of bipolar switching.In addition,the influence of key parameters on the mode of switching is discussed,including the field-like torque strength,the bias field,and the current density.Our proposal can be used to design novel reconfigurable logic circuits in the near future. 展开更多
关键词 spin-orbit torque(SOT) field-like torque magnetization switching perpendicular magnetization
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Micromagnetic studies of perpendicular recording FePt media with controllable grain size distributions 被引量:1
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作者 DONG Zhong PIAO Kun +3 位作者 SHE Shengxian WEI Dan LI Zhenghua WEI Fulin 《Rare Metals》 SCIE EI CAS CSCD 2006年第z1期436-439,共4页
A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions ... A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions were studied by grain growth simulation.It is found that the cross-track-averaged magnetization changes little between the L1_(0)FePt medium with uniform or non-uniform grain size distribution. 展开更多
关键词 perpendicular recording L1_(0)FePt medium controllable grain size distributions micromagnetic simulation
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Analysis of mode Ⅲ crack perpendicular to the interface between two dissimilar strips 被引量:2
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作者 M.S.Matbuly 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2008年第4期433-438,共6页
The present work is concerned with the problem of mode Ⅲ crack perpendicular to the interface of a bi-strip composite. One of these strips is made of a functionally graded material and the other of an isotropic mater... The present work is concerned with the problem of mode Ⅲ crack perpendicular to the interface of a bi-strip composite. One of these strips is made of a functionally graded material and the other of an isotropic material, which contains an edge crack perpendicular to and terminating at the interface. Fourier transforms and asymptotic analysis are employed to reduce the problem to a singular integral equation which is numerically solved using Gauss-Chebyshev quadrature formulae. Furthermore, a parametric study is carried out to investigate the effects of elastic and geometric characteristics of the composite on the values of stress intensity factor. 展开更多
关键词 Composite · Interface · perpendicular crack ·Anti-plane shear stress · Fourier transform. Singular integral equation
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Micromagnetic simulation of FeCo write head in perpendicular recording hard disk drives
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作者 QUAN Liang WEI Dan 《Rare Metals》 SCIE EI CAS CSCD 2006年第z1期502-508,共7页
The single-pole tip (SPT) heads made of the high saturation FeCo ferromagnetic metals are crucial for the actualization of ultrahigh density perpendicular recording. The effective head field distribution in the medium... The single-pole tip (SPT) heads made of the high saturation FeCo ferromagnetic metals are crucial for the actualization of ultrahigh density perpendicular recording. The effective head field distribution in the medium is of key importance for the design of the SPT head, which would be analyzed by micromagnetic simulations in this work. Two 3D micromagnetic models of the SPT head were established to select a more appropriate method of modeling, with a magnetostatic image effect or a real soft magnetic material to model the image of the SPT head in soft under layer (SUL). The results from these two designs were tested and compared to the ideal head field calculated by the Jacobi finite element method (FEM); and the design with the real soft magnetic material as image was proved suitable for simulating the ultrahigh density perpendicular recording write head. 展开更多
关键词 SPT head perpendicular recording micromagnetic simulation IMAGE
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