将PEBB(Power Electronic Building Block)技术应用在电力储能领域,构建基于PEBB的新型储能变流器,克服了传统变流器的一系列缺点。经试验证实,构建的变流器在对阀控密封式铅酸蓄电池(VRLA)充放电时,能获得较好的电流、电压波形,也满足...将PEBB(Power Electronic Building Block)技术应用在电力储能领域,构建基于PEBB的新型储能变流器,克服了传统变流器的一系列缺点。经试验证实,构建的变流器在对阀控密封式铅酸蓄电池(VRLA)充放电时,能获得较好的电流、电压波形,也满足电网谐波的要求,起到了"削峰填谷"的作用。展开更多
Simultaneously imposed challenges of highvoltage insulation,high dv/dt,highswitching frequency,fast protection,and thermal management associated with the adoption of 10 kV SiC MOSFET,often pose nearly insurmountable b...Simultaneously imposed challenges of highvoltage insulation,high dv/dt,highswitching frequency,fast protection,and thermal management associated with the adoption of 10 kV SiC MOSFET,often pose nearly insurmountable barriers to potential users,undoubtedly hindering their penetration in mediumvoltage(MV)power conversion.Key novel technologies such as enhanced gatedriver,auxiliary power supply network,PCB planar dcbus,and highdensity inductor are presented,enabling the SiCbased designs in modular MV converters,overcoming aforementioned challenges.However,purely substituting SiC design instead of Sibased ones in modular MV converters,would expectedly yield only limited gains.Therefore,to further elevate SiCbased designs,novel highbandwidth control strategies such as switchingcycle control(SCC)and integrated capacitorblocked transistor(ICBT),as well as highperformance/highbandwidth communication network are developed.All these technologies combined,overcome barriers posed by stateoftheart Si designs and unlock system level benefits such as very high power density,highefficiency,fast dynamic response,unrestricted line frequency operation,and improved power quality,all demonstrated throughout this paper.展开更多
文摘将PEBB(Power Electronic Building Block)技术应用在电力储能领域,构建基于PEBB的新型储能变流器,克服了传统变流器的一系列缺点。经试验证实,构建的变流器在对阀控密封式铅酸蓄电池(VRLA)充放电时,能获得较好的电流、电压波形,也满足电网谐波的要求,起到了"削峰填谷"的作用。
基金conducted under ARPA-e from DOE with the award number DE-AR0000892.
文摘Simultaneously imposed challenges of highvoltage insulation,high dv/dt,highswitching frequency,fast protection,and thermal management associated with the adoption of 10 kV SiC MOSFET,often pose nearly insurmountable barriers to potential users,undoubtedly hindering their penetration in mediumvoltage(MV)power conversion.Key novel technologies such as enhanced gatedriver,auxiliary power supply network,PCB planar dcbus,and highdensity inductor are presented,enabling the SiCbased designs in modular MV converters,overcoming aforementioned challenges.However,purely substituting SiC design instead of Sibased ones in modular MV converters,would expectedly yield only limited gains.Therefore,to further elevate SiCbased designs,novel highbandwidth control strategies such as switchingcycle control(SCC)and integrated capacitorblocked transistor(ICBT),as well as highperformance/highbandwidth communication network are developed.All these technologies combined,overcome barriers posed by stateoftheart Si designs and unlock system level benefits such as very high power density,highefficiency,fast dynamic response,unrestricted line frequency operation,and improved power quality,all demonstrated throughout this paper.
