Poor wettability of poly(triarylamine)(PTAA)surfaces and insufficient control over residual PbI_(2) clusters remain critical bottlenecks limiting the performance of PTAA-based p-i-n perovskite solar cells(PSCs).Herein...Poor wettability of poly(triarylamine)(PTAA)surfaces and insufficient control over residual PbI_(2) clusters remain critical bottlenecks limiting the performance of PTAA-based p-i-n perovskite solar cells(PSCs).Herein,we introduce an effective interface engineering strategy through the incorporation of the ionic liquid 1-butyl-3-methylimidazolium acetate(BMIMAc).Owing to its strong affinity for the perovskite precursor solvent(N,N-dimethylformamide,DMF),BMIMAc significantly enhances PTAA wettability,promoting the formation of uniform and defect-passivated perovskite films.In addition,BMIMAc modulates the energy level alignment of PTAA,facilitating more efficient hole extraction and transport across the interface.More importantly,BMIMAc interacts with PbI_(2) to decelerate perovskite crystallization kinetics,enabling a more complete conversion of PbI_(2) into the perovskite phase.This synergistic regulation yields perovskite films with enlarged grain sizes,reduced trap densities,and suppressed nonradiative recombination losses.Benefiting from these advances,the optimized PTAA-based p-i-n PSCs achieve a record-high power conversion efficiency of 25.10%with significantly enhanced operational stability.展开更多
Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive s...Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.展开更多
研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着...研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着p-In Ga N层厚度的增加,短路电流下降是导致In Ga N电池效率降低的主要原因。选择较薄的p-In Ga N层有利于提高p-i-n结构In Ga N太阳电池的效率。展开更多
基金funded by Nazarbayev University under Collaborative Research Program(Grant No.211123CRP1613,A.N.)Faculty Development Competitive Research Grants Program for 2024-2026(Grant No.201223FD8801,A.N.)+5 种基金This work is supported by Scientific Research Startup Fund for Spray-on Perovskite Photovoltaics R&D Center(No.602331011PQ)Research Projects of Department of Education of Guangdong Province 2024ZDZX3079The financial support from Guangdong Basic and Applied Basic Research Foundation(No.2023A1515011677)the Scientific and Technical Innovation Council of Shenzhen(20220812165832002)Research Projects of Department of Education of Guangdong Province-2023GCZX015the Innovation Team Project of Guangdong(2022KCXTD055)is gratefully acknowledged.Q.L.and F.W.contributed equally to this work.
文摘Poor wettability of poly(triarylamine)(PTAA)surfaces and insufficient control over residual PbI_(2) clusters remain critical bottlenecks limiting the performance of PTAA-based p-i-n perovskite solar cells(PSCs).Herein,we introduce an effective interface engineering strategy through the incorporation of the ionic liquid 1-butyl-3-methylimidazolium acetate(BMIMAc).Owing to its strong affinity for the perovskite precursor solvent(N,N-dimethylformamide,DMF),BMIMAc significantly enhances PTAA wettability,promoting the formation of uniform and defect-passivated perovskite films.In addition,BMIMAc modulates the energy level alignment of PTAA,facilitating more efficient hole extraction and transport across the interface.More importantly,BMIMAc interacts with PbI_(2) to decelerate perovskite crystallization kinetics,enabling a more complete conversion of PbI_(2) into the perovskite phase.This synergistic regulation yields perovskite films with enlarged grain sizes,reduced trap densities,and suppressed nonradiative recombination losses.Benefiting from these advances,the optimized PTAA-based p-i-n PSCs achieve a record-high power conversion efficiency of 25.10%with significantly enhanced operational stability.
基金National Natural Science Foundation of China(No.61376017)。
文摘Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.
文摘研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着p-In Ga N层厚度的增加,短路电流下降是导致In Ga N电池效率降低的主要原因。选择较薄的p-In Ga N层有利于提高p-i-n结构In Ga N太阳电池的效率。
