Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive s...Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.展开更多
GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, i...GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.展开更多
研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着...研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着p-In Ga N层厚度的增加,短路电流下降是导致In Ga N电池效率降低的主要原因。选择较薄的p-In Ga N层有利于提高p-i-n结构In Ga N太阳电池的效率。展开更多
基金National Natural Science Foundation of China(No.61376017)。
文摘Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.
文摘GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.
文摘研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着p-In Ga N层厚度的增加,短路电流下降是导致In Ga N电池效率降低的主要原因。选择较薄的p-In Ga N层有利于提高p-i-n结构In Ga N太阳电池的效率。
